公开(公告)号：JPS60152079A

公开(公告)日：1985-08-10

申请号：JP832484

申请日：1984-01-19

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI

IPC: H01L27/14 ,  H01L27/144 ,  H01L31/10

Abstract: PURPOSE:To stabilize the photocurrents of a photodiode by simple structure by unifying the photodiode and a bipolar integrated circuit and forming a dummy photodiode connected at constant potential around the photodiode. CONSTITUTION:A bipolar integrated circuit consisting of transistors 12, 13 and a photodiode 11 are unified and shaped. Dummy photodiodes 14, 15 are formed around the photodiode 11, and each N type epitaxial layer 9 in the dummy photodiodes is connected to a P type silicon substrate 1 or a constant voltage section and the dummy photodiodes are brought to constant potential. According to such constitution, the photocurrents of the photodiode section 11 do not change even when the potential of the transistors 12, 13 in the bipolar integrated circuit alters.

公开(公告)号：JPS5994476A

公开(公告)日：1984-05-31

申请号：JP18641183

申请日：1983-10-03

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  NAGAO HISAO

IPC: H01L31/10 ,  H01L31/12

Abstract: PURPOSE:To prevent the erroneous operation of a photocoupler due to electrostatic coupling by forming an emitter region on the main part of a base region to cover the part. CONSTITUTION:In a structure which has an N type collector region 1, a P type base region 2 and an N type emitter region 3, the region 3 is formed on the part to cover the main part of the region 2. As a result, the capacity CGPB proportional to the surface area of the region 2 is largely reduced, and the influence to the electrostatic coupling corresponding thereto can be remarkably reduced. In this manner, the influence of the coupling in the photocoupler can be removed by this simple structure, and the erroneous operation due to the application of the abrupt pulse voltage can be eliminated.

公开(公告)号：JPS55132078A

公开(公告)日：1980-10-14

申请号：JP3904679

申请日：1979-03-30

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  TANI YOSHIHEI

IPC: G01J1/44 ,  G01J9/00 ,  H01L27/14 ,  H01L31/02 ,  H01L31/107

Abstract: PURPOSE:To detect wavelength of an irradiated light at high precision by compensating output of a PN-junction, for which a temperature compensating resistance is connected to the output part of a logarithmic compression circuit. CONSTITUTION:When inputting the output current of photodiodes PD1 and PD2 of deep and shallow junctions of an optical semiconductor device 1 to operational amplifier circuits OP1, OP2, it is subjected to logarithmic compression by diodes D1, D2 having a logarithmic characteristic which is inserted in a feedback circuit. Outputs VOP1, VOP2 are inputted to an arithmetic operational amplifier OP3 through resistances R1 and R2 respectively. A resistance to be connected to the operational amplifier OP3 is selected at R1=R2, R3=R4. Assuming short-circuit currents of the diodes PD1 and PD2 be ISC1, ISC2, VOUT=ValphaXR3/R2Xlog (ISC1/ ISC2). Therefore, re sistances R3, R2 of temperature coefficient sufficient enough to compensate a change of the constant Valpha according to temperatures are selected to keep ValphaXR3/R2 constant, a wavelength can be detected from light output at high precision.

公开(公告)号：JPS5546177A

公开(公告)日：1980-03-31

申请号：JP12021378

申请日：1978-09-28

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  TANI YOSHIHEI ,  ASOU AKIRA ,  KAHANABE HITOSHI

IPC: G01J3/51 ,  G01J1/44 ,  G01J3/427 ,  G01J3/50 ,  G01J9/00 ,  H01L31/11

Abstract: PURPOSE:To enable to respond to the chrominance information of broad range with a simple constitution, by using the photo conductor element of two layer construction. CONSTITUTION:The PN junctions 4, 3 different in the depth to photo detection plane are formed, and the unit consists of the photo semiconductor element 1 providing the electrodes to pick up the photo output current at the junctions 3, 4, and variable amplifying circuits A1, A2 to which the photo output current at the junctions 3, 4, of the element 1 is respectively inputted and the amplification factor of the photo output current of another is changed to one photo output current. Further, by comparing B the photo output current outputted from the circuts A1 and A2, the color difference output is formed.

公开(公告)号：JP2514095B2

公开(公告)日：1996-07-10

申请号：JP24669789

申请日：1989-09-22

Applicant: SHARP KK

Inventor： MARYAMA MITSURU ,  YOSHIKAWA TOSHIBUMI

IPC: H01L29/74 ,  H01L29/747

公开(公告)号：JPH05191074A

公开(公告)日：1993-07-30

申请号：JP666192

申请日：1992-01-17

Applicant: SHARP KK

Inventor： NAKAMURA HIDEYUKI ,  YOSHIKAWA TOSHIBUMI ,  TANABE KYOJI ,  SHONO HIROAKI

IPC: G01R31/20 ,  H05K9/00

Abstract: PURPOSE:To protect a spot discharge tester against malfunction caused by electromagnetic noises emitted from peripheral equipments by a method wherein the spot discharge tester is covered with a case formed of conductive material, and the case is grounded. CONSTITUTION:A voltage is applied to measurement terminals 21, where the terminals 21 are covered with insulating material such as acrylic resin or the like to prevent hands from coming indirect with the terminals 21. A case 22 formed of conductor is provided to cover a measurement section 11 and its vicinity including a sample mount. The conductor is formed of material such as an aluminum plate or a gold net. The case 22 is shielded by grounding, whereby a spot discharge test can be executed without being affected by spatial noises, and thus accurate judgment results can be obtained. Moreover, an insulating film 23 is provided to cover the outer and the inner surface of the case 22 to promote safety. The insulating film 23 is made of resin high in breakdown strength such as acrylic resin or polyurethane resin.

公开(公告)号：JPH0547990B2

公开(公告)日：1993-07-20

申请号：JP2324082

申请日：1982-02-15

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  NAKAKURA YUKINORI

IPC: H01L29/74 ,  H01L31/111

公开(公告)号：JPH04368183A

公开(公告)日：1992-12-21

申请号：JP14461091

申请日：1991-06-17

Applicant: SHARP KK

Inventor： SHIMIZU AKIRA ,  YOSHIKAWA TOSHIBUMI

IPC: H01L31/10

Abstract: PURPOSE:To increase photoelectric current without increasing an area of a base/collector junction region by providing a lens which increases strength of light which is injected to a minority carrier diffusion region and proximity thereof. CONSTITUTION:A P-type base region 3 exists in a silicon substrate 1 which becomes a collector region and a minority carrier diffusion region 7 wherein minority carrier of the same conductivity as a collector region diffuses exists in a periphery of the base region 3. A silicon oxide film 17 is formed on a main surface of the silicon substrate 1. A through-hole is formed in a silicon oxide film 17 on an emitter region 5, and an emitter electrode 13 is connected with the emitter region 5 through the through-hole. A lens 15 is formed on the silicon oxide film 17 to increase strength of light injected to the minority carrier diffusion region 7 and a minority carrier diffusion region proximity 23. Therefore, it is possible to increase photoelectric current without increasing a chip size.

公开(公告)号：JPH03284877A

公开(公告)日：1991-12-16

申请号：JP8672590

申请日：1990-03-30

Applicant: SHARP KK

Inventor： MARIYAMA MITSURU ,  YOSHIKAWA TOSHIBUMI

IPC: H01L29/74 ,  H01L29/747

Abstract: PURPOSE:To improve sensitivity of a commutation element by a light using a horizontal junction, to enhance dv/dt resistance and to improve performance of a lateral phototriac by forming an N+ type diffused region on the rear surface of an N-type substrate of each thyristor, and not forming an N type diffused region on the rear surface of the substrate at the intermediate of each thyristor. CONSTITUTION:A P-type anode diffused region A2 at a left side, a P-type P gate diffused region P2 provided outside the region A2, and an N type cathode diffused region K2, etc., provided at the part of the region P2 are formed on an N-type substrate 1 to form one thyristor. A P-type anode diffused region A1, a P-type gate diffused region P1, a cathode diffused region K1, etc., are formed symmetrically to the forming part of the thyristor at the left side of the substrate 1 to form the other thyristor. N type diffused regions 2, 2 are formed only on the rear surface of each thyristor, P-type gate diffused regions P1, P2 are disposed in section at the outside of cathode diffused regions K1, K2, and N+ type diffused layers 2, 3 are provided on the rear surface of each thyristor. An N type diffused region for performing a BSF effect exists only on the rear surface of each thyristor.

公开(公告)号：JPH03256354A

公开(公告)日：1991-11-15

申请号：JP5423890

申请日：1990-03-06

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  SHOZEN KAZUNOBU ,  OKADA MASATAKE ,  MIYAJIMA TOSHIAKI ,  MATSUNAMI MITSUO ,  YOSHIOKA MINORU

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/732

Abstract: PURPOSE:To reduce a collector cutoff current substantially and reduce the area of chips without forming a parasitic transistor by forming a plurality of transistors on the surface of a semiconductor substrate and at least some other circuit components on an insulated film which covers the surface of the semiconductor board. CONSTITUTION:Bases 3 and 4 of a first stage transistor Q1 and an output stage transistor Q2 are formed on the surface of a semiconductor substrate 1. Then, a first stage emitter 5 and an output stage emitter 6 are formed on the surface of the base 3 and the base 4. Then, the transistors Q1 and Q2 are produced. At the next step, a non-single crystal silicon film 7, which is doped with N type impurities, is formed on an insulation film formed on the surface of the semiconductor substrate 1. An energy beam 10 is radiated to the non-single crystal film 7 so that it may be molten-recrystalized and turned into a single crystal film 8. Then, a diode 11 is formed on one part of the single crystal silicon film 8-1 while a resistor 112 is formed on the other part of the single crystal silicon film 8-1.