中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

78 records (took 0.047 seconds)

    VERTICAL INSULATED GATE TYPE FIELD EFFECT SEMICONDUCTOR DEVICE
    1.
    发明专利
    VERTICAL INSULATED GATE TYPE FIELD EFFECT SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS62101077A

    公开(公告)日：1987-05-11

    申请号：JP24216085

    申请日：1985-10-28

    Applicant: SHARP KK

    Inventor： YOSHIKAWA TOSHIBUMI ,  OKADA KEIICHI ,  KUBO MASARU ,  YOSHIOKA MINORU ,  ITO TAKUYA

    IPC: H01L29/08 ,  H01L29/78

    Abstract: PURPOSE:To obtain a high dielectric strength VD-MOS-FET whose ON resistance is reduced without increasing the chip size by providing an impurity region with a low specific resistivity in the surface part of an epitaxial layer. CONSTITUTION:In a powder VD-MOS-FET, the bottom surface of an N type semiconductor substrate 1 is used as a drain 2 and an N-type epitaxial layer 3 is formed on its top surface and P-type base regions 4 are formed in the parts of its surface part and N type regions 5 with a low specific resistivity are formed in the parts of the surface parts of the P-type base regions 4 as sources 6. A gate 9 is provided above a channel region 7, which is the other part of the surface part of the P-type region 4, with an SiO2 film 8 in between. An N type impurity region 12 with a low specific resistivity is formed in the surface part of the epitaxial layer 3 between the base regions 4. As the impurity region 12 is provided, the ON resistance at that part is significantly reduced so that the whole ON resistance can be reduce without increasing the chip size.

    MANUFACTURE OF SEMICONDUCTOR DEVICE
    3.
    发明专利
    MANUFACTURE OF SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS60239073A

    公开(公告)日：1985-11-27

    申请号：JP9484284

    申请日：1984-05-11

    Applicant: SHARP KK

    Inventor： YOSHIKAWA TOSHIBUMI ,  KUBO MASARU ,  KAGISAWA ATSUSHI ,  NISHIMOTO NOBUHIRO

    IPC: H01L27/14 ,  H01L31/10 ,  H01L31/103 ,  H01L31/18

    Abstract: PURPOSE:To obtain a photoelectric conversion device, in which the speed of response of a photodiode is increased, by forming a semiconductor layer on the light-receiving surface side in deep depth with low impurity concentration through an ion implantation method. CONSTITUTION:Ions are implanted to a diode section P 11 immediately after the diffusion of an impurity to the surface, and junction depth is deepened according to an implantation time and impurity concentration is lowered according to the quantity of implantation. A junction capacitance CPD reduces at that time. The width of a depletion layer 12 is widened by applied voltage to a P-N junction. The transfer time tdif of holes in an N layer 3 is represented by tdifalphaL when a distance up to the depletion layer 12 is represented by L, and holes pass through the depletion layer at tdr. A relaxation time tre tdif is held because of tdif>>tdr. The layer 11 is thickened through ion implantation, L in the layer 3 can be shortened, and tre is shortened. The diffusion of electrons generated in the P layer 11 by light absorption is also conducted at short tre due to an electric field by a concentration gradient in the layer 11. The speed of response of a diode is determined by CPD and tre, and a photoelectric conversion device having the fast speed of response is obtained because both CPD and tre take small values.

    SEMICONDUCTOR DEVICE
    4.
    发明专利
    SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS58140161A

    公开(公告)日：1983-08-19

    申请号：JP2324082

    申请日：1982-02-15

    Applicant: SHARP KK

    Inventor： YOSHIKAWA TOSHIBUMI ,  NAKAKURA YUKINORI

    IPC: H01L29/74 ,  H01L31/111

    Abstract: PURPOSE:To make outside equipping parts as unnecessary, and to enlarge the value of (dv)/(dt) of the vertical photo thyristor by a method wherein the vertical photo thyristor is constructed selecting base width to be the most suitable value, enlarging hFE, and moreover reducing gate resistance. CONSTITUTION:A vertical photo thyristor has the sectional construction the same with the construction of the usual vertical photo thyristor, while for enlargement of (dv)/(dt), base width of the P-N-P transistor is made to be the most suitable, and moreover hFE is enlarged and gate resistance is reduced. Namely the characteristics of hFE and gate resistance can be improved usually by enlarging life time of the base region of the transistor, and it can be attained by performing a heat treatment. Moreover base width (d) can be extended utilizing the process to manufacture a resistor 9 by diffusion.

    SEMICONDUCTOR SWITCHING ELEMENT
    5.
    发明专利
    SEMICONDUCTOR SWITCHING ELEMENT 失效

    公开(公告)号：JPS5651864A

    公开(公告)日：1981-05-09

    申请号：JP12767279

    申请日：1979-10-02

    Applicant: SHARP KK

    Inventor： ASOU AKIRA ,  HAYASHI KOUJI ,  SHIYOUZEN KAZUNOBU ,  YOSHIKAWA TOSHIBUMI

    IPC: H01L29/744 ,  H01L29/74

    Abstract: PURPOSE:To obtain the switching element capable of compensating the low breakdown voltage and having a breakdown voltage equal to that of SCR of a substrate by incorporating a diffused resistor into a semiconductor substrate in one body and selecting the diffused position. CONSTITUTION:Side wall of an element is provided with an N type substrate 1 equipped with separate diffusion 2 of P type impurity. A P type anode layer 3 is attached onto the reverse side and an annular P type gate layer 4 is formed on the surface, and a P type diffused resistor 5 is formed in a region 1a caught between the gate layers. As the resistor layer 5 is surrounded by a depletion layer stretching around the gate layer 4 at the time of its operation, it is possible to obtain a sufficiently high breakdown voltage almost equal to that of SCR or the substrate. And then, an N type cathode layer 6 and an N type protective ring 7 are provided, a window 11 for the gate is provided on an insulation film 8, and a window 8 for the resistor is provided on the gate layer in a position capable of obtaining the required resistance value from the terminal connected in the substrate, and then, the windows 10 and 8 are connected with each other by an Al electrode 9. It is possible, by using this constitution, to obtain the switching element of high capability.

    OPTICAL SEMICONDUCTOR APPARATUS
    6.
    发明专利
    OPTICAL SEMICONDUCTOR APPARATUS 失效

    公开(公告)号：JPS5585082A

    公开(公告)日：1980-06-26

    申请号：JP16547178

    申请日：1978-12-20

    Applicant: SHARP KK

    Inventor： TANI YOSHIHEI ,  YOSHIKAWA TOSHIBUMI ,  SHIGEMASA JIYUNICHIROU

    IPC: G01J1/02 ,  H01L31/10

    Abstract: PURPOSE:To obtain characteristics comparatively approximate to human's eye by installing a filter capable of cutting infra-red ray on the light reception surface. CONSTITUTION:In optical semiconductor element A, the first and second pn- junctions 2, 3 are formed inside silicon substrate 1 and at the same time, electrodes are provided to output shortcircuit currents from each pn-junctions. In order to eliminate or attenuate infra-red ray component contained in an incident light received on the light reception surface of optical semiconductor element A, filter F capable of cutting infra-red ray is mounted on the light reception surface. As a result, a characteristic approximate to human's eye is obtained.

    COLOR DIFFERENCE MEASURING UNIT
    7.
    发明专利
    COLOR DIFFERENCE MEASURING UNIT 失效

    公开(公告)号：JPS5526467A

    公开(公告)日：1980-02-25

    申请号：JP9968578

    申请日：1978-08-15

    Applicant: SHARP KK

    Inventor： TANI YOSHIHEI ,  YOSHIKAWA TOSHIBUMI ,  ASOU AKIRA ,  KAHANABE HITOSHI

    IPC: G01J3/51 ,  G01J1/44 ,  G01J3/427 ,  G01J3/50 ,  G01J9/00 ,  G06K7/12 ,  H01L25/04 ,  H01L31/02 ,  H01L31/10 ,  H01L31/11

    Abstract: PURPOSE:To make a filter needless in a color difference measuring unit by using a phote semiconductor device where two or nore PN junctions different in depth are formed. CONSTITUTION:PN junctions 2 and 3 different in depth are formed on the light receiving face of P-type semiconductor substrate 1. Junction 2 absorbs long wave length components in the irradiation light to generate a photo output current, between electrodes 4 and 5 and junction 3 absorbs short wave length components to generate a photo output current between electrodes 5 and 6. This photo semiconductor device PD0 forms a circuit where photo diodes PD1 and PD2 are connected in series backward. The light from light source L is irradiated to tested object W, and the reflection light is incident onto device PD0. Output signals between electrodes of device PD0 are inputted to operation circuit B through logarithmic compression circuits A1 and A2, and color sensor output Vout is formed. Output Vout is led to decision circuit C where reference level signal V0 is given previously, and the output is used for decision of tetsted object W and processing course management, and the output is sent to display material D as required to display the measurement result.

    WAVELENGTH DETECTOR USING PHOTO SEMICONDUCTOR DEVICE
    8.
    发明专利
    WAVELENGTH DETECTOR USING PHOTO SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS5517461A

    公开(公告)日：1980-02-06

    申请号：JP9066578

    申请日：1978-07-24

    Applicant: SHARP KK

    Inventor： YOSHIKAWA TOSHIBUMI ,  TANI YOSHIHEI ,  ASOU AKIRA ,  KAHANABE HITOSHI

    IPC: G01J3/50 ,  G01J1/44 ,  G01J3/427 ,  G01J9/00 ,  G01N21/31 ,  H01L31/10

    Abstract: PURPOSE:To increase the performance by using the photo semiconductor device forming a plurality of PN junctions different in the depth for a single semiconductor substrate. CONSTITUTION:The epitaxial layer 3 showing the N type conduction is provided on the P type silicon substrate 2, the P type region 4 is provided comparatively shallower in the epitaxial layer 3, the first PN junction 5 deeply located between the N type epitaxial layer 3 and the P type substrate 2 and the second PN junction 6 shallowly located between the N type epitaxial layer 3 and the P type region 4 are formed and they are taken as the first and second photo diodes PD1 and PD2, and the photo semiconductor device providing the electrodes 8 to 10, insulation film 11 and non-transparent thin film 12 is assembled with the wave length detection circuit. Further, the photo output currents IPD1 and IPD2 of the first and second photo diodes PD1 AND PD2 are introduced and inputted to the operational amplifying circuits 21 and 22, and the favorable corresponding relation between the wave length of the emitted light and the output signal can be obtained from the ratio.

Patent Agency Ranking