公开(公告)号：JP2003133649A

公开(公告)日：2003-05-09

申请号：JP2001330068

申请日：2001-10-29

Applicant: SHARP KK ,  SUMITOMO ELECTRIC INDUSTRIES

Inventor： YUASA TAKAYUKI ,  UEDA YOSHIHIRO ,  ITO SHIGETOSHI ,  TANETANI MOTOTAKA ,  TANI YOSHIHEI ,  MOTOKI KENSAKU

IPC: C23C16/04 ,  C23C16/34 ,  H01L21/205 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor device with reduced crystal defects inside and reduced stress, and also to provide a semiconductor optical device provided with the nitride semiconductor laser device. SOLUTION: On the surface of an n-type GaN substrate 10 which consists of low dislocation regions 12 and dislocation concentrated regions 11 wherein crystal defects are heavily concentrated, which are arranged alternately in the stripe geometry, a growth suppression film 13 for suppressing the growth of a GaN crystal is so formed as to cover the dislocation concentrated regions. On the n-type GaN substrate formed with the growth suppression film 13, a GaN crystal is epitaxially grown to form a nitride semiconductor layer on the n-type GaN substrate, resulting on fabricating a nitride semiconductor laser device having a low concentration of crystal defects.

公开(公告)号：JP2001250975A

公开(公告)日：2001-09-14

申请号：JP2000059676

申请日：2000-03-03

Applicant: SHARP KK

Inventor： OKADA MASATAKE ,  KOYAMA JUNICHIRO ,  FUKUNAGA NAOKI ,  TANI YOSHIHEI

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a wavelength sensor whose degree of the absorption of light with long wavelength differs and which can identify wavelength from the ratio of optical current, by selectively forming a silicon germanium layer whose light absorption coefficient is larger than silicon by not less than 20 times in a part of a silicon photodiode without using dye whose color easily fades. SOLUTION: In a wavelength sensor, silicon germanium layers 4 different in thickness are deposited on plural first conductive silicon layers 1 separated by an insulating film. Second conductive impurity is diffused on the silicon germanium layers 4 and the light of long wavelength is absorbed by the silicon germanium layers 4. Thus, photodiodes 16 can obtain different optical currents with respect to the wavelength of light.

公开(公告)号：JPH11243230A

公开(公告)日：1999-09-07

申请号：JP34948098

申请日：1998-12-09

Applicant: SHARP KK

Inventor： OKAZAKI ATSUSHI ,  TANI YOSHIHEI ,  ABE SHIYUUZOU

IPC: H05K1/18 ,  H01L25/075 ,  H01L33/02 ,  H01L33/44 ,  H01L33/62 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a small, thin, and low-cost light-emitting diode chip capable of being mounted directly on the surface of a printed circuit board without through a bonding wire. SOLUTION: This light-emitting diode chip comprises a plurality of chips connected by a conductive material or solder 6 in an orthogonal direction of the P-N junction face at a positive and negative electrode sections 3 and 4 formed on both end faces in parallel with the P-N junction face of the chips, and the electrode 3 and 4 of both ends of the connected sequential chip have a solder coating layer 5 on their surfaces.

公开(公告)号：JPH07325319A

公开(公告)日：1995-12-12

申请号：JP11799594

申请日：1994-05-31

Applicant: SHARP KK

Inventor： KAWAI NOBORU ,  FURUTA KOICHI ,  TANI YOSHIHEI

IPC: G02B5/28 ,  G02F1/133 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1365 ,  G02F1/1368 ,  G06F3/041 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L31/10

Abstract: PURPOSE:To realize a TFT active matrix matrix display device capable of realizing photodetection on a liquid crystal screen with a simple structure and having excellent fineness over the entire part of this screen. CONSTITUTION:TFT elements 2 are used as photodetecting elements for detecting light from the outside of the liquid crystal display device provided with a liquid crystal display part having the photodetecting elements described above. The photodetecting TFT elements 2 may be made of the same structure as the structure of the liquid crystal driving TFT elements 1. Light shielding filters for shutting off the external light are disposed in the upper parts of the liquid crystal driving TF elements 1 and interference filters for allowing selective passage of only the light of specific wavelengths are arranged in the upper parts of the photodetecting TFT elements 2. The interference filter having characteristics to allow passage of only the IR light of a wavelength 950nm is used as an example of the interference filter described above.

公开(公告)号：JPH0514260B2

公开(公告)日：1993-02-24

申请号：JP13210483

申请日：1983-07-19

Applicant: SHARP KK

Inventor： MASAKI RYOICHI ,  SUMYOSHI KENJI ,  FUKUDA HIROAKI ,  TANI YOSHIHEI

IPC: G03B27/62 ,  G03G15/00 ,  G03G15/04

公开(公告)号：JPH0453273B2

公开(公告)日：1992-08-26

申请号：JP1887785

申请日：1985-01-31

Applicant: SHARP KK

Inventor： MASUDA YOSHIFUMI ,  TANI YOSHIHEI

IPC: H01L31/12 ,  G01V8/12

公开(公告)号：JPH0217786A

公开(公告)日：1990-01-22

申请号：JP16803188

申请日：1988-07-05

Applicant: SHARP KK

Inventor： TANI YOSHIHEI ,  OKABAYASHI NAONORI ,  SUZUKI KENJI

IPC: H04B1/40 ,  H04Q9/00

Abstract: PURPOSE:To attain the miniaturization and light weight of a device and to reduce power consumption by stopping a booster circuit to boost and supply the voltage of a power source in a transmission part to a reception part while driving the transmission part. CONSTITUTION:A remote controller A is provided with the transmission part 1 to transmit a control signal Y to an equipment B to be controlled, the reception part 2 to receive the control signal Y from the equipment B to be controlled, and a control part 3 to make the transmission part 1 transmit the control signal Y and to receive the control signal Y received by the reception part 2. The power source 10 is connected to the transmission part 1, and the voltage of the power source 10 is boosted at the booster circuit 11 further, and is supplied to the reception part 2. The booster circuit 11 is stopped at least while the transmission part 1 is driven.

公开(公告)号：JPS612316B2

公开(公告)日：1986-01-23

申请号：JP16547178

申请日：1978-12-20

Applicant: Sharp Kk

Inventor： TANI YOSHIHEI ,  YOSHIKAWA TOSHIBUMI ,  SHIGEMASA JUNICHIRO

IPC: G01J1/02 ,  H01L31/10

公开(公告)号：JPS612315B2

公开(公告)日：1986-01-23

申请号：JP12021278

申请日：1978-09-28

Applicant: Sharp Kk

Inventor： TANI YOSHIHEI ,  YOSHIKAWA TOSHIBUMI ,  ASO AKIRA ,  KAWANABE HITOSHI

IPC: G01J1/44 ,  H01L31/10

公开(公告)号：JPS6061814A

公开(公告)日：1985-04-09

申请号：JP17097083

申请日：1983-09-14

Applicant: SHARP KK

Inventor： TANI YOSHIHEI ,  YAMURA KENJI ,  KAWAI NOBORU

IPC: H02P29/00 ,  G05D3/12 ,  G05D3/14

Abstract: PURPOSE:To perform accurate positioning and simplify a system by switching to the position signal generated by an encoder simultaneously to the completion of acceleration/deceleration drive and making a stop at a target position. CONSTITUTION:When acceleration/deceleration control is completed beyond the target stop position, control based upon an approximate sine-wave position signal A' is entered and the signal A' is at a positive voltage, so the signal is inverted by an error amplifier 13 to apply a motor 12 with a reverse voltage for return to the target stop position. The positive voltage is applied beyond a zero- cross point to start the driving for return to the zero-cross point. If the object is before the target stop position when the acceleration/deceleration control is completed, the signal A' is at a negative voltage, so the positive voltage is applied to make an advance to the target position, and oscillation operation is repeated thereafter to make a stop at the target stop position.