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    RF MEMS crosspoint switch and crosspoint switch matrix comprising RF MEMS crosspoint switches
    51.
    发明公开
    RF MEMS crosspoint switch and crosspoint switch matrix comprising RF MEMS crosspoint switches 有权
    RF-MEMS-Kreuzpunktschalter和Kreuzpunktschaltermatrix mit RF-MEMS-Kreuzpunktschaltern

    公开(公告)号：EP2506282A1

    公开(公告)日：2012-10-03

    申请号：EP11160016.9

    申请日：2011-03-28

    Applicant: Delfmems

    Inventor： Pavageau, Christophe

    IPC: H01H59/00 ,  H01P1/12

    CPC classification number: H01P1/15 ,  B81B5/00 ,  B81B2201/018 ,  H01H1/0036 ,  H01H1/20 ,  H01H59/0009 ,  H01H2001/0063 ,  H01H2001/0084 ,  H01H2059/0072 ,  H01P1/127 ,  H01P3/003

    Abstract: The RF MEMS crosspoint switch (1) comprising a first transmission (10) line and a second transmission line (11) that crosses the first transmission line ; the first transmission line (10) comprises two spaced-apart transmission line portions (100, 101), and a switch element (12) that permanently electrically connects the said two spaced-apart transmission line portions (100, 101) ; the second transmission line (11) crosses the first transmission line (10) between the two spaced-apart transmission line portions (100, 101); the RF MEMS crosspoint switch (1) further comprises actuation means (121) for actuating the switch element (12) at least between a first position, in which the switch element (12) is electrically connecting the said two spaced-apart transmission line portions (100, 101) of the first transmission line (10) and the first (10) and second (11) transmission lines are electrically disconnected, and a second position, in which the switch element (12) is electrically connecting the said two spaced-apart transmission line portions (100, 101) of the first transmission line (10) and is also electrically connecting the two transmission lines (10, 11) together.

    Abstract translation: RF MEMS交叉点开关（1）包括穿过第一传输线的第一传输（10）线和第二传输线（11）; 第一传输线（10）包括两个间隔开的传输线部分（100,101）和永久地电连接所述两个间隔开的传输线部分（100,101）的开关元件（12）。 所述第二传输线（11）穿过所述两个间隔开的传输线部分（100,101）之间的所述第一传输线（10）。 RF MEMS交叉点开关（1）还包括用于至少在第一位置之间致动开关元件（12）的致动装置（121），其中开关元件（12）将所述两个间隔开的传输线部分 第一传输线路（10）和第一（10）和第二（11）传输线路的第一位置（100,101）被电断开;以及第二位置，其中开关元件（12）将所述两个间隔 - 所述第一传输线（10）的传输线路部分（100,101），并且还将所述两条传输线（10,11）电连接在一起。

    METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES
    53.
    发明授权
    METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES 有权
    用于生产机电MICRO SWITCH CMOS兼容SUBSTRATES

    公开(公告)号：EP1461828B1

    公开(公告)日：2008-01-23

    申请号：EP02803310.8

    申请日：2002-11-07

    Applicant: International Business Machines Corporation

    Inventor： VOLANT, Richard, P. ,  BISSON, John, C. ,  COTE, Donna R. ,  DALTON, Timothy, J. ,  GROVES, Robert, A. ,  PETRARCA, Kevin, S. ,  STEIN, Kenneth, J. ,  SUBBANNA, Seshadri

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

    Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

    Trilayered beam MEMS device and related methods
    56.
    发明公开
    Trilayered beam MEMS device and related methods 有权
    Dreischichtige Strahl-MEMS-Einrichtung unddiesbezüglicheVerfahren

    公开(公告)号：EP1717193A1

    公开(公告)日：2006-11-02

    申请号：EP06118798.5

    申请日：2002-11-08

    Applicant: WiSpry, Inc.

    Inventor： Cunningham, Shawn, J. ,  Tatic-Lucic, Svetlana

    IPC: B81B3/00

    CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

    Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

    Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 并且去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

    Multi-metal layer MEMS structure and process for making the same
    57.
    发明公开
    Multi-metal layer MEMS structure and process for making the same 有权
    多金属层的MEMS结构和它们的制备方法

    公开(公告)号：EP1443017A3

    公开(公告)日：2005-06-08

    申请号：EP04380016.8

    申请日：2004-01-22

    Applicant: Akustica Inc.

    Inventor： Gabriel, Kaigham J. ,  Zhu, Xu

    IPC: B81B3/00 ,  H04R19/00

    CPC classification number: B81C1/00158 ,  B81B2201/018 ,  B81B2201/0257 ,  B81C2201/0109 ,  H01G5/16

    Abstract: The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer. In that manner, a portion of the first metal layer may form a micro-machined mesh which is released when a portion of the base sacrificial layer in the area of the micro-machined mesh is removed. Additionally, a second layer of sacrificial material and a third metal layer may be provided. A micro-machined mesh may be formed in a portion of the third metal layer. The structure of the present invention may be used to construct variable capacitors, switches and, when certain of the meshes are sealed, microspeakers and microphones.

    VERFAHREN ZUM HERSTELLEN EINES MIKROMECHANISCHEN RELAIS
    60.
    发明授权
    VERFAHREN ZUM HERSTELLEN EINES MIKROMECHANISCHEN RELAIS 失效
    一种用于生产微机械式继电器

    公开(公告)号：EP0938738B1

    公开(公告)日：2000-06-14

    申请号：EP97950134.3

    申请日：1997-11-06

    Applicant: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

    Inventor： SCHIELE, Ignaz ,  KOZLOWSKI, Frank

    IPC: H01H59/00

    CPC classification number: B81C1/00936 ,  B81B2201/018 ,  H01H59/0009 ,  H01H2059/0018 ,  H01H2059/0072

    Abstract: The invention relates to a method for manufacturing a micromechanical relay comprising the preparation of a substrate (10) having a fixed conductive electrode (18) in the substrate (10) or on the same. A sacrificial layer (26) and a conductive layer (32) are applied, the conductive layer (32) being structured as a movable counter electrode (39) in relation to the fixed electrode (18) in order to fix a lug structure. A contact segment (40) is applied, wherein the conductive layer (32) extends between an anchoring area (54) and a contact area (40) and is isolated with respect to the contact area. Subsequently, the sacrificial layer (26) is removed by etching to produce a movable segment and a segment fixed to the substrate (10) in the anchoring area (54) in the lug structure, which is fixed in such a way, that the etching access openings in the same are structured in such a way that the surface expansion of the etching access openings (66) to etch the sacrificial layer (26) increases from the area of the lug structure (54) fixed to the substrate (10) to the movable area of the lug structure.

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