公开(公告)号：EP1934133A4

公开(公告)日：2012-09-26

申请号：EP05791165

申请日：2005-10-10

Applicant: SILVERBROOK RES PTY LTD

Inventor： SILVERBROOK KIA

IPC: B81C1/00 ,  B41J2/05 ,  B41J2/14 ,  B41J2/16

CPC classification number: B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/032 ,  B81B2201/052 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0108 ,  B81C2201/0126

公开(公告)号：EP2300355A1

公开(公告)日：2011-03-30

申请号：EP08756961.2

申请日：2008-06-20

Applicant: Silverbrook Research Pty Ltd

Inventor： MCAVOY, Gregory John ,  KERR, Emma Rose ,  SILVERBROOK, Kia

IPC: B81B7/02 ,  B81B3/00 ,  G01N27/00 ,  G01N35/00

CPC classification number: G01N35/08 ,  B41J2/14427 ,  B41J2002/14435 ,  B81B2201/052 ,  B81C1/00253 ,  G01N2035/1041

Abstract: A microfluidic system comprising an integrated circuit having a bonding surface bonded to a polymeric microfluidics platform. The microfluidic system comprises one or more microfluidics devices controlled by control circuitry in the integrated circuit. At least one of the microfluidic devices comprises a MEMS actuator positioned in a MEMS layer of the integrated circuit. The MEMS layer is covered with a polymeric layer which defines the bonding surface of the integrated circuit.

公开(公告)号：EP2172415A1

公开(公告)日：2010-04-07

申请号：EP08830937.2

申请日：2008-09-04

Applicant: Panasonic Corporation

Inventor： NAKATANI, Masaya ,  USHIO, Hiroshi ,  HIRAOKA, Soichiro ,  OSHIMA, Akiyoshi ,  TAKAHASHI, Makoto

IPC: B81B1/00 ,  B41J2/16 ,  B81C1/00

CPC classification number: G01N33/48728 ,  B81B2201/0214 ,  B81B2201/052 ,  B81C1/00206 ,  Y10T428/23943

Abstract: A silicon structure of the present invention is provided with a silicon substrate (1) to become a base, and a plurality of fibrous projections (2) made of silicon dioxide and directly joined to a silicon-made surface (1a) of the silicon substrate (1). By arbitrarily constructing an area where these fibrous projections (2) are formed in a predetermined area, it is possible to render the area to have at least either hydrophilicity or water retentivity, so as to provide a silicon structure useful for a variety of devices.

Abstract translation: 本发明的硅结构设置有成为基底的硅衬底（1）和由二氧化硅制成并直接接合到硅衬底的硅制表面（1a）的多个纤维突起（2） （1）。 通过任意地构成这些纤维状突起（2）形成在预定区域的区域，可以使该区域具有至少亲水性或保水性，以提供对各种装置有用的硅结构。

公开(公告)号：EP1720795A1

公开(公告)日：2006-11-15

申请号：EP05723177.1

申请日：2005-02-16

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： POLLARD, Jeffrey R. ,  MILLER, Michael D.

IPC: B81C1/00 ,  B41J2/16

CPC classification number: B81C1/00087 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B81B2201/052

Abstract: The described embodiments relate to slotted substrates (300) and methods of forming same. One exemplary method forms a first slot portion (410a) into a first surface (302) of a substrate (300), the first slot portion (410a) defining a footprint (404) at the first surface (302). The method also forms a second slot portion (410a1) through the first slot portion (410a); and, forms a third slot portion (410a2) through a second surface (303) of the substrate (300) sufficiently to intercept the second slot portion (410a1) to form a fluid-handling slot (305) through the substrate (300).

公开(公告)号：KR1020120060832A

公开(公告)日：2012-06-12

申请号：KR1020127004947

申请日：2009-08-25

Applicant: 실버브룩 리서치 피티와이 리미티드

Inventor： 푸,야오 ,  챠이,이-웬 ,  맥레이놀즈,다렐라뤼 ,  섹커,데이비드 ,  보드랜,발레리 ,  위즈니에스키,위톨드

IPC: H01L21/3065

CPC classification number: B41J2/16 ,  B41J2/14137 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B81B2201/052 ,  B81C1/00476 ,  G03F7/427 ,  H01L21/31138

Abstract: 부수적 베일 벗김을 가진 포토레지스트 제거 방법이 제공된다. 상기 방법은 CF
4 와 같은 O
2 , NH
3 및 불소함유가스 포함하는 가스화학으로부터 형성된 플라즈마를 사용한다. 이 방법은 잉크 제트 프린트 조립 같은 MEMS 조립 공정에서 사용상 특히 적합하다.

公开(公告)号：KR101114941B1

公开(公告)日：2012-03-06

申请号：KR1020097025772

申请日：2008-06-16

Applicant: 세이코 엡슨 가부시키가이샤

Inventor： 사토미츠루 ,  모리요시아키

IPC: C09J5/02 ,  B23K20/00 ,  C30B33/06 ,  B29C65/02

CPC classification number: C09J5/02 ,  B23K26/0624 ,  B23K26/244 ,  B23K26/26 ,  B23K2201/42 ,  B23K2203/56 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1634 ,  B81B2201/052 ,  B81C3/001 ,  B81C2203/036 ,  C09J2400/146 ,  H01L21/187 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2225/0651 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  Y10T156/10 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: 본발명의실리콘기재(基材)의접합방법은, Si-H 결합을함유하는제1 실리콘기재에대해, 에너지를부여하여, 벽개(劈開)할면에따라존재하는 Si-H 결합을선택적으로절단하고, 생성한수소가스의팽창압에의해, 제1 실리콘기재를벽개하여, 이벽개면에실리콘의미결합수를노출시키는제1 공정과, 벽개된제1 실리콘기재의벽개면과, 표면에실리콘의미결합수가노출한제2 실리콘기재의표면을접촉시켜, 이들을접합하는제2 공정을갖는다.

公开(公告)号：KR101000212B1

公开(公告)日：2010-12-10

申请号：KR1020087011016

申请日：2005-10-10

Applicant: 실버브룩 리서치 피티와이 리미티드

Inventor： 실버브룩키아

IPC: B81C1/00 ,  B41J2/05 ,  B41J2/16

CPC classification number: B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/032 ,  B81B2201/052 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0108 ,  B81C2201/0126

Abstract: ＭＥＭＳ공정에서 현수형 빔을 제조하는 방법으로서, 상기 방법은,
(a) 베이스(base)와 측벽들(sidewalls)을 갖는 피트(pit)를 기판에 에칭하는 단계(etching);
(b) 상기 피트를 채울 수 있도록 상기 기판의 표면에 희생물질(sacrificial material)을 퇴적하는 단계(depositing);
(c) 상기 피트 내의 둘레영역(perimeter region)과 상기 피트를 둘러싸는 기판 표면으로부터 상기 희생물질을 제거하는 단계(removing);
(d) 상기 피트 내의 잔류 희생물질을 역류시켜(reflowing) 상기 잔류 희생물질이 상기 측벽들과 접촉하게 하는 단계;
(e) 상기 기판 표면 및 역류된 희생물질 위에 빔 물질(beam material)을 퇴적하는 단계; 및
(f) 상기 역류된 희생물질을 제거하여 현수형 빔을 형성하는 단계; 를 포함한다.

公开(公告)号：KR100857629B1

公开(公告)日：2008-09-08

申请号：KR1020077007838

申请日：2005-10-04

Applicant: 실버브룩 리서치 피티와이 리미티드

Inventor： 맥레이놀드대럴라루 ,  실버브룩키아

IPC: H01L21/3065 ,  H01L27/00

CPC classification number: H01L21/02057 ,  B41J2/1412 ,  B41J2/1601 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/164 ,  B81B2201/052 ,  B81B2203/033 ,  B81C1/00849 ,  B81C2201/0112 ,  B81C2201/0132

Abstract: 실리콘 웨이퍼 내의 에칭된 트렌치의 측벽으로부터 폴리머 코팅을 제거하는 방법이 제공된다. 상기 방법은 바이어스 플라즈마 에칭 챔버에서 O
2 플라즈마를 사용하여 웨이퍼를 에칭하는 것을 포함한다. 상기 챔버 온도는 90~180℃ 범위이다.

公开(公告)号：WO2016139945A1

公开(公告)日：2016-09-09

申请号：PCT/JP2016/001149

申请日：2016-03-03

Applicant: SEIKO EPSON CORPORATION

Inventor： TANAKA, Shuichi

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/14274 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2002/14419 ,  B41J2002/14491 ,  B81B7/007 ,  B81B2201/052 ,  B81B2203/04 ,  B81B2207/012 ,  H01L41/042 ,  H01L41/0472 ,  H05K1/183

Abstract: Provided are an MEMS device, a head, and a liquid jet device in which substrates are inhibited from warping, so that a primary electrode and a secondary electrode can be reliably connected to each other. Included are a primary substrate 30 provided with a bump 32 including a primary electrode 34, and a secondary substrate 10 provided with a secondary electrode 91 on a bottom surface of a recessed portion 36 formed by an adhesive layer 35. The primary substrate 10 and the secondary substrate 30 are joined together with the adhesive layer 35, the primary electrode 34 is electrically connected to the secondary electrode 91 with the bump 32 inserted into the recessed portion 36, and part of the bump 32 and the adhesive layer 35 forming the recessed portion 36 overlap each other in a direction in which the bump 32 is inserted into the recessed portion 36.

Abstract translation: 提供了一种MEMS器件，头部和液体喷射装置，其中基板被阻止翘曲，使得主电极和次级电极可以可靠地彼此连接。 包括具有包括主电极34的凸块32的主基板30和在由粘合剂层35形成的凹部36的底面上设置有次级电极91的次基板10。一次基板10和 第二基板30与粘合剂层35接合在一起，一次电极34与凸部32插入到凹部36中而与次级电极91电连接，凸部32的一部分和形成凹部的粘接层35 36在凸块32插入凹部36的方向上彼此重叠。

公开(公告)号：WO2015030803A1

公开(公告)日：2015-03-05

申请号：PCT/US2013/057610

申请日：2013-08-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, LP

Inventor： SADIK, Patrick Wayne ,  MCKAY, Roger A Jr

IPC: B81C1/00 ,  H01L21/302 ,  H01L21/306

CPC classification number: B81C1/00063 ,  B41J2/162 ,  B41J2/1626 ,  B81B2201/052 ,  B81C2201/0115 ,  B81C2201/0133 ,  B81C2201/0181

Abstract: An example provides a method including sputtering a metal catalyst onto a substrate, exposing the substrate to a solution that reacts with the metal catalyst to form a plurality of pores in the substrate, and etching the substrate to remove the plurality of pores to form a recess in the substrate.

Abstract translation: 一个实例提供了一种方法，包括：将金属催化剂溅射到衬底上，将衬底暴露于与金属催化剂反应以在衬底中形成多个孔的溶液中，并且蚀刻衬底以去除 多个孔隙以在衬底中形成凹陷。