-
51.发明授权VERFAHREN ZUR HERSTELLUNG VON VEREINZELTEN, AUF EINEM SILIZIUMSUBSTRAT ANGEORDNETEN MIKROMECHANISCHEN BAUTEILEN UND HIERAUS HERGESTELLTE BAUTEILE 有权PROCESS FOR PRODUCING俱乐部帐篷，ARRANGED MICRO机械部件的硅衬底并由此生产的部件上
公开(公告)号：EP2282969B1
公开(公告)日：2016-07-27
申请号：EP09749684.8
申请日：2009-04-03
Applicant: Robert Bosch GmbH
Inventor： LAERMER, Franz , TEEFFELEN, Kathrin , LEINENBACH, Christina
IPC: G01L9/00 , H01L21/3065 , H04R19/00 , H04R31/00
CPC classification number: G01L9/0042 , B81C1/00888 , B81C2201/017 , H01L21/3065 , H01L21/30655 , H04R19/005 , H04R31/006
-
52.发明公开A MICROMECHANICAL STRUCTURE AND A METHOD OF FABRICATING A MICROMECHANICAL STRUCTURE 审中-公开微机械结构和一种用于生产微机械结构
公开(公告)号：EP2089312A4
公开(公告)日：2014-08-06
申请号：EP07835541
申请日：2007-11-09
Applicant: AGENCY SCIENCE TECH & RES
Inventor： TRIPATHY SUDHIRANJAN , SAHMUGANATHAN VICKNESH
CPC classification number: B81C1/00484 , B81C2201/0109 , B81C2201/0132 , B81C2201/017
-
53.发明公开THIN FILM DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开DÜNNSCHICHTVORRICHTUNGUND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2733114A1
公开(公告)日：2014-05-21
申请号：EP12815405.1
申请日：2012-07-10
Applicant: Murata Manufacturing Co., Ltd.
Inventor： UMEDA, Keiichi
IPC: B81B3/00 , B81C1/00 , C23C14/14 , H01L41/09 , H01L41/187
CPC classification number: H01B1/02 , B81B2201/0221 , B81B2203/04 , B81C1/00666 , B81C1/00698 , B81C2201/017 , B81C2201/0181 , C23C14/025 , C23C14/165 , C23C14/34 , H01G4/33 , H01G5/16 , H03H9/131 , H03H9/173 , H03H9/2457 , H03H2003/021 , H03H2003/0428 , H03H2009/02291
Abstract: In a thin film device including a thin film electrode which has a main electrode layer formed of tungsten, a thin film electrode having a low resistivity is realized. There is provided a thin film device (1) including a thin film electrode (7) which has an underlayer (7A) and a main electrode layer (7B) formed on the underlayer (7A), the underlayer (7A) is formed of a titanium-tungsten alloy having a crystalline structure with a wavy-like surface morphology, and the main electrode layer (7B) is formed of tungsten having a crystalline structure with a wavy-like surface morphology.
Abstract translation: 在包括具有由钨形成的主电极层的薄膜电极的薄膜器件中，实现了具有低电阻率的薄膜电极。 提供了一种薄膜器件（1），其包括具有底层（7A）的薄膜电极（7）和形成在底层（7A）上的主电极层（7B）），底层（7A）由 具有波浪形表面形态的晶体结构的钛 - 钨合金，并且主电极层（7B）由具有波浪形表面形态的晶体结构的钨形成。
-
公开(公告)号：EP1461286A1
公开(公告)日：2004-09-29
申请号：EP02716555.4
申请日：2002-05-02
Applicant: Silverbrook Research Pty. Limited
CPC classification number: B81C1/00666 , B81C2201/0167 , B81C2201/017 , C23C14/024 , C23C14/0641 , C30B23/02 , C30B29/38 , C30B29/605
Abstract: A crystalline thin film structure formed by the deposition of a predominant first crystalline material in two or more layers interleaved by layers of a second crystalline material having a lattice constant that differs from the lattice constant of the predominant first crystalline material in order to disrupt the growth of columnar crystals in the predominant first crystalline material in order to reduce the differential stress profile through the thickness of the film structure relative to the differential stress profile of a crystalline thin film structure formed solely from the predominant first crystalline material.
-
55.发明公开Bauelement für Sensoren mit intergrierter Elektronik und Verfahren zu seiner Herstellung, sowie Sensor mit intergrierter Elektronik 有权部件用于与集成电子元件和方法，用于其生产，以及与集成电子元件的传感器的传感器
公开(公告)号：EP1184335A3
公开(公告)日：2004-03-03
申请号：EP01117577.5
申请日：2001-07-20
Applicant: SIEMENS AKTIENGESELLSCHAFT
Inventor： Bruchhaus, Rainer, Dr. , Kolb, Stefan , Pitzer, Dana , Primig, Robert , Schreiter, Matthias , Winkler, Bernhard
IPC: B81B3/00
CPC classification number: B81C1/00246 , B81B7/0006 , B81B2203/0127 , B81B2203/0315 , B81B2207/07 , B81B2207/092 , B81B2207/097 , B81C2201/0109 , B81C2201/0163 , B81C2201/017 , B81C2203/0778
Abstract: Ein Bauelement für integrierte Sensoren, insbesondere für IR-Sensoren, hat ein Substrat (1), in dem eine Schaltung bzw. Bauelemente der Ausleseelektronik integriert ist/sind. Auf dem Substrat (1) ist eine Hilfsschicht angeordnet, die mit ein oder mehreren abgeschlossenen oder evakuierten Hohlräumen (3a) versehen ist. Eine Membran (4) schließt die Hohlräume (3a) nach oben hin ab, so dass ein Sensorelement vertikal in Bezug auf die Ausleseelektronik angeordnet werden kann. In Stützstrukturen (5) aus Si-Oxid befinden sich Metallisierungen (7), die sich senkrecht durch den Hohlraum (3a) erstrecken, um die vertikal angeordneten Sensorelemente und Ausleseschaltungen elektrisch zu verbinden.
-
Patent Agency Ranking56.发明公开CONTROLLED-STRESS STABLE METALLIZATION FOR ELECTRONIC AND ELECTROMECHANICAL DEVICES 审中-公开控制主应力特性电子及机电装置稳定的金属化
公开(公告)号：EP1186011A1
公开(公告)日：2002-03-13
申请号：EP00939853.8
申请日：2000-06-14
Applicant: Honeywell International Inc.
Inventor： GOLECKI, Ilan
IPC: H01L21/285 , H01L21/3205 , B81B3/00 , G01P15/00 , H01L23/532
CPC classification number: B81C1/00666 , B81C2201/017 , G01L1/183 , G01P15/0802 , G01P15/097 , G01P2015/0828 , H01L21/28506 , H01L21/2855 , H01L21/32051
Abstract: A method of forming a thin film metallization layer having a predetermined residual stress and a predetermined sheet resistance and force measuring devices formed using the methods.
-
57.发明授权
公开(公告)号：EP0389198B1
公开(公告)日：1997-10-15
申请号：EP90302859.5
申请日：1990-03-16
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Hori, Masaru, c/o Intellectual Property Division , Itoh, Masamitsu c/o Intellectual Property Division
IPC: G03F1/14
CPC classification number: G03F1/22 , B81C1/00666 , B81C2201/017
-
58.发明公开Method of manufacturing an X-ray exposure mask and device for controlling the internal stress of thin films 失效制造X射线曝光掩模的方法和用于控制薄膜内应力的装置
公开(公告)号：EP0389198A3
公开(公告)日：1991-07-03
申请号：EP90302859.5
申请日：1990-03-16
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Hori, Masaru, c/o Intellectual Property Division , Itoh, Masamitsu c/o Intellectual Property Division
IPC: G03F1/14
CPC classification number: G03F1/22 , B81C1/00666 , B81C2201/017
Abstract: An X-ray mask can be manufactured by forming an X-ray transmitting thin film (12) on a mask support (11), forming an X-ray absorber thin film (14) on the X-ray transmitting thin film (12), and patterning the X-ray absorber thin film (14) with a desired pattern to form an X-ray absorber pattern. Prior to the patterning, at least one inert element with an atomic number greater than that of neon is ion-implanted in the X-ray absorber thin film (14).
-
公开(公告)号：EP2691336B1
公开(公告)日：2017-11-29
申请号：EP12718721.9
申请日：2012-03-28
Applicant: UCL Business Plc.
Inventor： CHEUNG, Carl Leung Shin , HOOGENBOOM, Bart Wiebren
IPC: B81B3/00
CPC classification number: B81B3/00 , B81B3/0072 , B81B2201/12 , B81B2203/0118 , B81C2201/017
Abstract: A micromechanical device has a functional layer. One or more layers are provided between the functional layer and the micromechanical device to provide stress relief.
-
公开(公告)号：EP2691336A2
公开(公告)日：2014-02-05
申请号：EP12718721.9
申请日：2012-03-28
Applicant: UCL Business Plc.
Inventor： CHEUNG, Carl Leung Shin , HOOGENBOOM, Bart Wiebren
IPC: B81B3/00
CPC classification number: B81B3/00 , B81B3/0072 , B81B2201/12 , B81B2203/0118 , B81C2201/017
Abstract: A micromechanical device has a functional layer. One or more layers are provided between the functional layer and the micromechanical device to provide stress relief.
Abstract translation: 微机械装置具有功能层。 在功能层和微机械装置之间提供一层或多层以提供应力消除。
-
-
-
-
-
-
-
-
-
Search Results
321
records
(took 0.022 seconds)
