公开(公告)号：US11721526B2

公开(公告)日：2023-08-08

申请号：US16881458

申请日：2020-05-22

Applicant: MKS Instruments, Inc.

Inventor： Francesco Braghiroli

IPC: H01J37/32 ,  H05H1/46 ,  H03L7/099

CPC classification number: H01J37/32311 ,  H01J37/32201 ,  H01J37/32293 ,  H01J37/32798 ,  H03L7/099 ,  H05H1/46 ,  H01J2237/24564 ,  H01J2237/24592

Abstract: A method of generating power with a power generation system. Solid state generators generate a plurality of outputs. The outputs of the solid state generator modules are combined from a plurality of channels, in a combiner, using a phase optimization technique to generate an in phase combined output power.

公开(公告)号：US11646178B2

公开(公告)日：2023-05-09

申请号：US17241755

申请日：2021-04-27

Applicant: Tokyo Electron Limited

Inventor： Yuji Onuma ,  Hideo Kato

IPC: H01J37/32

CPC classification number: H01J37/32311 ,  H01J37/3299 ,  H01J37/32201 ,  H01J37/32266 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32275 ,  H01J37/32935

Abstract: A controller of a plasma processing apparatus stores a frequency spectrum related to a first timing into a storage unit, controls a microwave generator to generate a microwave in correspondence to a setting frequency, setting power, and a setting bandwidth at a second timing, controls a demodulator to measure travelling wave power and reflected wave power of the microwave for each frequency, calculates the frequency spectrum related to the second timing on the basis of a measurement result from the demodulator, calculates a correction value for correcting a waveform of the travelling wave power for each frequency such that a difference for each frequency between the frequency spectrum related to the second timing and the frequency spectrum related to the first timing, stored in the storage unit, is small, and controls the microwave generator on the basis of the calculated correction value for each frequency.

公开(公告)号：US20190244789A1

公开(公告)日：2019-08-08

申请号：US16341932

申请日：2017-10-04

Applicant: Tokyo Electron Limited

Inventor： Kazushi KANEKO ,  Yuki KAWADA

IPC: H01J37/32 ,  H01L21/67 ,  G01R23/16

CPC classification number: H01J37/32201 ,  G01R23/16 ,  H01J37/32266 ,  H01J37/32311 ,  H01J2237/327 ,  H01L21/67017 ,  H05H1/46

Abstract: In a microwave output device of an embodiment, a part of a travelling wave propagating from a microwave generation unit to an output are output from a directional coupler. A first measurement unit generates an analog signal corresponding to a power of the part of the travelling wave by using diode detection, and converts the analog signal into a digital value. One or more correction coefficients associated with a set frequency, a set power, a set bandwidth of a microwave designated for the microwave output device are selected. The selected one or more correction coefficients are multiplied by the digital value, and thus a measured value is determined.

公开(公告)号：US20190080886A1

公开(公告)日：2019-03-14

申请号：US16129299

申请日：2018-09-12

Applicant: Cellencor, Inc.

Inventor： Kenneth Kaplan

IPC: H01J37/32 ,  H03F3/19 ,  H03F3/21 ,  H01J37/244

CPC classification number: H01J37/32201 ,  H01J37/244 ,  H01J37/32311 ,  H03F3/19 ,  H03F3/21 ,  H05B6/686 ,  H05B6/705

Abstract: A microwave generating system includes a modular architecture which is configurable to provide power output from under 1-kilowatt to over 100-kilowatts. The various power levels are achieved by combining the RF outputs of multiple RF power amplifiers in a corporate structure. The system can be used on any ISM band. Each system component incorporates a dedicated embedded microcontroller for high performance real-time control response. The components are connected to a high speed digital data bus, and are commanded and supervised by a control program running on a host computer.

公开(公告)号：US20180174834A1

公开(公告)日：2018-06-21

申请号：US15889542

申请日：2018-02-06

Applicant: Euclid TechLabs, LLC

Inventor： James E. Butler

IPC: H01L21/02 ,  H01L21/66 ,  H01J37/32

CPC classification number: H01L21/02527 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32724 ,  H01J2237/3321 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/02376 ,  H01L21/02579 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02656 ,  H01L21/02658 ,  H01L22/12 ,  H01L22/26

Abstract: A method of preparing a diamond crystal substrate for epitaxial deposition thereupon of a delta doping layer includes preparing an atomically smooth, undamaged diamond crystal substrate surface, which can be in the (100) plane, by polishing the surface and then etching the surface to remove subsurface damage caused by the polishing. The polishing can include a rough polish, for example in the (010) direction, followed by a fine polish, for example in the (011) direction, that removes the polishing tracks from the rough polishing. After etching the polished face can have a roughness Sa of less than 0.3 nm. An inductively coupled reactive ion etcher can apply the etching at a homogeneous etch rate using an appropriate gas mixture such as using argon and chlorine to remove between 0.1 and 10 microns of material from the polished surface.

公开(公告)号：US09860941B2

公开(公告)日：2018-01-02

申请号：US14114422

申请日：2012-04-25

Applicant: Adrien Grandemenge ,  Jean-Marie Jacomino ,  Marilena Radoiu ,  Louis Latrasse

Inventor： Adrien Grandemenge ,  Jean-Marie Jacomino ,  Marilena Radoiu ,  Louis Latrasse

IPC: H05B6/64 ,  H05B6/74 ,  H05B6/66 ,  H01J37/32

CPC classification number: H05B6/6447 ,  H01J37/32009 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32266 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32678 ,  H05B6/664 ,  H05B6/74

Abstract: The invention relates to a facility (1) for microwave treatment of a load, including: at least one application device (30); at least one solid-state generator (4) in the field of microwaves, connected to at least one application device by a means for guiding (5) the electromagnetic wave; at least one frequency adjustment system (40) designed for adjusting the frequency of the wave produced by the corresponding generator (4); a measurement system (31) for the or each application device (30), designed for measuring the power reflected PR(i) by the application device (30); an automated control means (6) connected to each frequency adjustment system (40) and to each measurement system (31) in order to control the adjustment of the frequency f(i) of the electromagnetic wave according to the reflected power, in order to adjust the reflected power PR(i) and/or to adjust the transmitted power PT(i).

公开(公告)号：US20170229292A1

公开(公告)日：2017-08-10

申请号：US15422112

申请日：2017-02-01

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Yoji SATO ,  Takayasu SATO ,  Kazutaka TACHIBANA ,  Hiromichi NAKATA

IPC: H01J37/32

CPC classification number: H01J37/32853 ,  H01J37/32201 ,  H01J37/32477 ,  H01J37/32486 ,  H01J2237/3321

Abstract: A plasma chemical vapor deposition device includes an adhesion suppressing sheet suppressing a processing gas from adhering to an inner wall of a reactor. The adhesion suppressing sheet is arranged between a placement position of a workpiece and the inner wall of the reactor. The adhesion suppressing sheet is a fabric that includes first fiber bundles and second fiber bundles that extend in directions different from each other. In the first fiber bundles, front side portions and rear side portions are alternately arranged in a first direction. In the second fiber bundles, front side portions and rear side portions are alternately arranged in a second direction.

公开(公告)号：US20170221703A1

公开(公告)日：2017-08-03

申请号：US15420579

申请日：2017-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/687 ,  C23C8/34

CPC classification number: H01L21/02277 ,  C23C8/34 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45551 ,  C23C28/04 ,  C23C28/046 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32715 ,  H01J2237/332 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764

Abstract: A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.

公开(公告)号：US20170040145A1

公开(公告)日：2017-02-09

申请号：US15304366

申请日：2015-06-10

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： JOHN ROBERT BRANDON ,  IAN FRIEL ,  MICHAEL ANDREW COOPER ,  GEOFFREY ALAN SCARSBROOK ,  BEN LLEWLYN GREEN

IPC: H01J37/32 ,  C23C16/511 ,  C30B29/04 ,  C30B25/10 ,  C30B25/20 ,  C23C16/27 ,  C23C16/458

CPC classification number: H01J37/32201 ,  C23C16/274 ,  C23C16/458 ,  C23C16/511 ,  C30B25/105 ,  C30B25/205 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32247 ,  H01J37/32284 ,  H01J37/32293 ,  H01J37/32302 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

Abstract translation: 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室，其限定用于支撑具有初级微波谐振模式频率f的初级微波谐振模式的谐振腔; 耦合到等离子体室的多个微波源，用于产生并馈送具有总微波功率Pτ的微波进入等离子体室; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 以及衬底保持器，其设置在所述等离子体室中并且包括用于支撑在其上沉积所述合成金刚石材料的衬底的支撑表面，其中所述多个微波源被配置为耦合所述总微波功率的至少30％ Pτ以初级微波共振模式频率f进入等离子体室，并且其中多个微波源中的至少一些是固态微波源。

公开(公告)号：US20150318148A1

公开(公告)日：2015-11-05

申请号：US14645837

申请日：2015-03-12

Applicant: MKS Instruments, Inc.

Inventor： Xing Chen ,  Chengxiang Ji ,  Erin Madden ,  IIya Pokidov ,  Kevin W. Wenzel

IPC: H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/32201 ,  H01J37/32311 ,  H01J37/32522 ,  H05H1/46 ,  H05H2001/4622

Abstract: An apparatus for generating plasma includes a plasma discharge tube and a conductive coil helically wound around an outer surface of the plasma discharge tube. A waveguide is coupled to a microwave cavity surrounding the plasma discharge tube to guide the microwave energy into the plasma discharge tube such that the plasma is generated in the plasma discharge tube. The waveguide is positioned such that an electric field of the microwave energy is oriented at a predetermined angle with respect to the longitudinal axis of the plasma discharge tube. A resulting induced electric current in the conductive coil affects power absorption in the plasma discharge tube, the predetermined angle being selectable such that power absorption in the plasma discharge tube is according to a predetermined profile with respect to the longitudinal axis of the plasma discharge tube.