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    BARRIER METAL LAYER FOR A CARBON NANOTUBE FLAT PANEL DISPLAY
    51.
    发明公开
    BARRIER METAL LAYER FOR A CARBON NANOTUBE FLAT PANEL DISPLAY 审中-公开
    势垒金属层适用于由碳纳米管，平板显示器

    公开(公告)号：EP1547114A2

    公开(公告)日：2005-06-29

    申请号：EP03815183.3

    申请日：2003-08-20

    Applicant: Cdream Display Corporation

    Inventor： KANG, Simon ,  BAE, Craig ,  KIM, jung, Jao

    IPC: H01J1/05

    CPC classification number: B82Y10/00 ,  H01J1/3048 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/952

    Abstract: A flat panel display and a method for forming a carbon nanotube based flat panel display. In one embodiment, the flat panel display includes a barrier layer formed between a catalyst layer upon which microstructures of carbon nanotubes are formed and a resistor layer. The barrier layer acts as an anti diffusion layer between the catalysts layer and the resistor layer to prevent the catalyst layer from diffusing into the resistor layer during the growing of the carbon nanotubes. The barrier layer also enhances the adhesion characteristics of the catalyst layers to enable the uniform growth of the carbon nanotube structures on the catalyst layer.

    FDM demultiplexer using oversampled digital filters
    52.
    发明公开
    FDM demultiplexer using oversampled digital filters 失效
    FDM-Demultiplexer mit DigitalenüberabgetastetenFiltern。

    公开(公告)号：EP0280161A2

    公开(公告)日：1988-08-31

    申请号：EP88102241.2

    申请日：1988-02-16

    Applicant: NEC CORPORATION

    Inventor： Ichiyoshi, Osamu

    IPC: H01J1/05 ,  H04J4/00

    CPC classification number: H04J1/05 ,  H03H17/0213

    Abstract: An N-channel FDM signal is converted into complex signals of baseband frequencies (1-6) spaced at intervals equal to frequency Δf. The complex baseband signals are converted first into digital samples (7-9)having a frequency NΔf and then into N parallel digital signals (11). A plurality of first FIR subfilters (17-1 through 17-N) respectively perform filtering on each of the parallel digital signals at frequency Δf to produce a first series of filtered digital signals from each of the first FIR subfilters, and (m - 1) groups of second FIR subfilters respectively perform filtering on each of the parallel digital signals at frequency Δf to produce a second series of filtered digital samples from each of the second FIR subfilters at timing displaced with respect to the first series by a/mΔf, where is an integer ranging from unity to (m - 1) and m is an integer equal to or greater than 2. Outputs of the first FIR subfilters are combined with outputs of the second FIR subfilters to produce N summation outputs at frequency mΔf. An N-point Fast Fourier Transform processor (14) performs fast Fourier transform on the N summation outputs at frequency mΔf to derive digital channels. Because of the oversampling at frequency mΔf, each of the digital channels has a frequency response which can be made flat over the bandwidth Δf.

    Abstract translation: N信道FDM信号被转换成以等于频率DELTA f的间隔隔开的基带频率（1-6）的复信号。 复基带信号首先被转换成具有频率N DELTA f的数字样本（7-9），然后转换成N个并行数字信号（11）。 多个第一FIR子滤波器（17-1至17-N）分别对频率DELTA f上的每个并行数字信号执行滤波，以产生来自第一FIR子滤波器中的每一个的第一系列滤波数字信号，并且（m- 1）第二FIR子滤波器组分别在频率DELTA f上对每个并行数字信号执行滤波，以在相对于第一系列移位的定时由a / m产生来自第二FIR子滤波器中的每一个的第二系列滤波数字采样 DELTA f，其中是从单位到（m-1）的整数，并且m是等于或大于2的整数。第一FIR子滤波器的输出与第二FIR子滤波器的输出组合，以产生频率的N个求和输出 米DELTA f。 N点快速傅立叶变换处理器（14）以频率m DELTA f对N个求和输出进行快速傅立叶变换，以得到数字通道。 由于在频率m DELTA f处的过采样，每个数字通道具有可以在带宽DELTA f上变得平坦的频率响应。

    ELECTRON GUN DEVICE
    53.
    发明公开
    ELECTRON GUN DEVICE 审中-公开

    公开(公告)号：EP3923313A1

    公开(公告)日：2021-12-15

    申请号：EP20843228.6

    申请日：2020-07-13

    Applicant: Param Corporation

    Inventor： YASUDA, Hiroshi ,  OOAE, Yoshihisa ,  SHIBAOKA, Tatsuya ,  MURATA, Hidekazu

    IPC: H01J37/06 ,  H01J37/305 ,  H01J1/05 ,  H01J1/06 ,  H01J1/10

    Abstract: An electron gun device according to the present invention emits an electron beam by means of heating to a high temperature in a vacuum. According to the present invention, the surface of a material (108, 125), which emits an electron beam, is a hydrogenated metal that is melted and in a liquid state during a high-temperature operation; the liquid hydrogenated metal is contained in a hollow cover tube container (102, 124), which is in a solid state during the high-temperature operation, in the form of a hydrogenated liquid metal or in the form of a liquid metal before hydrogenation, and heated together with the cover tube container (102, 124) to a high temperature; subsequently, the hydrogenated liquid metal is exposed from the cover tube container (102, 124) and forms a liquid surface where gravity, the electric field and the surface tension of the liquid surface are balanced; and an electron beam is emitted from the exposed surface of the hydrogenated liquid metal.

    Kunststoffzusammensetzung mit Charge-Transfer Komplexen, deren Herstellung und deren Verwendung
    54.
    发明公开
    Kunststoffzusammensetzung mit Charge-Transfer Komplexen, deren Herstellung und deren Verwendung 失效
    电子传输技术协会，德国Herstellung und deren Verwendung。

    公开(公告)号：EP0554219A1

    公开(公告)日：1993-08-04

    申请号：EP93810036.9

    申请日：1993-01-20

    Applicant: CIBA-GEIGY AG

    Inventor： Chetcuti, Peter, Dr.

    IPC: C08K5/45 ,  C08K5/48 ,  C07D339/06 ,  C07D345/00 ,  H01B1/12 ,  C08J5/18 ,  H01J1/05

    CPC classification number: H01B1/121 ,  C07D339/06 ,  C07D345/00 ,  C08K5/45 ,  C08K5/48

    Abstract: Zusammensetzung, enthaltend a) ein duroplastisches, thermoplastisches oder strukturell vernetztes Polymer und b) einen Charge-Transfer Komplex der Formel I in Form eines Netzwerks aus Kristallnadeln in der Polymermatrix,

            [A] ⊖· B ⊕    (I),


    worin

    A eine Verbindung der Formel II oder eine Mischung von Verbindungen der Formel II ist,
    worin die R gleich sind und für H oder C₁-C₄-Alkyl stehen, oder die benachbarten R zusammen -(CH₂)₃- oder -(CH₂)₄- darstellen; R₁ H oder C₁-C₄-Alkyl bedeutet; X₁ =N-CN darstellt und X₂, X₃ und X₄ unabhängig voneinander =O oder =N-CN bedeuten, und
    B eine Verbindung der Formel III oder IIIa bedeutet,



    worin R₂, R₃, R₄ und R₅ unabhängig voneinander H, lineares oder verzweigtes C₁-C₁₈-Alkyl-(Z₁) n -, unsubstituiertes oder mit C₁-C₄-Alkyl, C₁-C₄-Alkoxy, C₁-C₄-Alkylthio substituiertes Phenyl-(Z₁) n - oder Benzyl-(Z₁) n - bedeuten, oder R₂ und R₃ sowie R₄ und R₅ je zusammen unabhängig voneinander unsubstituiertes oder mit C₁-C₄-Alkyl, C₁-C₄-Alkoxy, C₁-C₄-Alkylthio substituiertes Trimethylen, Tetramethylen, -Z₂-(CH₂)-Z₂-, -Z₂-(CH₂)₂-Z₂-, -Z₁-CH=CH-Z₁- oder -CH=CH-CH=CH- darstellen, n für 0 oder 1 steht, Y₁ und Y₂ unabhängig voneinander -S- oder -Se- sind, Z₁ für -S- oder -Se- steht, Z₂ -O-, -S- oder -Se- darstellt, Z -S-, -Se- oder NR₇ bedeutet und R₇ H, C₁-C₆-Alkyl, Phenyl oder Benzyl ist, und R₆ für H, C₁-C₄-Alkyl, Phenyl oder Benzyl steht. Diese Zusammensetzungen sind elektrische Leiter.

    Abstract translation: 一种组合物，其包含a）热固性，热塑性或结构交联的聚合物，和b）在聚合物基质中的结晶针网络形式的式I的电荷转移络合物[A]（B） （ - ）>（I）化合物，其中A是式II的化合物或式II化合物的混合物，其中基团R相同并且是H或C 1 -C 4 - 烷基，或相邻的 基团R一起为 - （CH 2）3 - 或 - （CH 2）4 - ; R1基团是H或C1-C4-烷基; X1 = N-CN，X2，X3和X4彼此独立地为= O或= N-CN，B为式III或IIIa化合物，其中R2，R3，R4和 R 5彼此独立地为H，直链或支链C 1 -C 18 - 烷基 - （Z 1）n - ， - 苯基 - （Z 1）n - 或苄基 - （Z 1）n - ，其各自未被取代或被C1 C 1-4 - 烷基，C 1 -C 4 - 烷氧基或C 1 -C 4 - 烷硫基，或者R 2和R 3，以及各自的R 4和R 5彼此独立地是未取代的或C 1 -C 4烷基 - ，C 1 -C 4 - 烷氧基 - 或C 1 -C 4 - 烷硫基取代的三亚甲基，四亚甲基，-Z2-（CH 2）-Z 2 - ， - Z 2 - （CH 2）2 -Z 2 - ， - Z 1 -CH = CH-Z 1 - 或-CH = CH = CH-，n为0或1，Y1和Y2彼此独立地为-S-或-Se-，Z1为-S-或-Se-，Z2为-O - ， - S-或 - Se-，Z是-S-，-Se-或NR7，R7是H，C1-C6-烷基，苯基或苄基，R6是H，C1-C4-烷基，苯基或苄基。 这些组合物是电导体。

    FDM demultiplexer using oversampled digital filters
    56.
    发明公开
    FDM demultiplexer using oversampled digital filters 失效
    FDM DEMULTIPLEXER使用超级数字滤波器

    公开(公告)号：EP0280161A3

    公开(公告)日：1990-12-12

    申请号：EP88102241.2

    申请日：1988-02-16

    Applicant: NEC CORPORATION

    Inventor： Ichiyoshi, Osamu

    IPC: H01J1/05 ,  H04J4/00

    CPC classification number: H04J1/05 ,  H03H17/0213

    Abstract: An N-channel FDM signal is converted into complex signals of baseband frequencies (1-6) spaced at intervals equal to frequency Δf. The complex baseband signals are converted first into digital samples (7-9)having a frequency NΔf and then into N parallel digital signals (11). A plurality of first FIR subfilters (17-1 through 17-N) respectively perform filtering on each of the parallel digital signals at frequency Δf to produce a first series of filtered digital signals from each of the first FIR subfilters, and (m - 1) groups of second FIR subfilters respectively perform filtering on each of the parallel digital signals at frequency Δf to produce a second series of filtered digital samples from each of the second FIR subfilters at timing displaced with respect to the first series by a/mΔf, where is an integer ranging from unity to (m - 1) and m is an integer equal to or greater than 2. Outputs of the first FIR subfilters are combined with outputs of the second FIR subfilters to produce N summation outputs at frequency mΔf. An N-point Fast Fourier Transform processor (14) performs fast Fourier transform on the N summation outputs at frequency mΔf to derive digital channels. Because of the oversampling at frequency mΔf, each of the digital channels has a frequency response which can be made flat over the bandwidth Δf.

    PATTERNING CNT EMITTERS
    57.
    发明申请
    PATTERNING CNT EMITTERS 审中-公开
    绘图CNT发射器

    公开(公告)号：WO2006014502A2

    公开(公告)日：2006-02-09

    申请号：PCT/US2005/024011

    申请日：2005-07-06

    Applicant: NANO-PROPRIETARY, INC. ,  MAO, Dongsheng ,  FINK, Richard ,  YANIV, Zvi

    Inventor： MAO, Dongsheng ,  FINK, Richard ,  YANIV, Zvi

    IPC: H01J1/05

    CPC classification number: H01J29/04 ,  B82Y10/00 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2329/0431 ,  H01J2329/0455

    Abstract: An industrial scale method for patterning nanoparticle emitters for use as cathodes in a display device is disclosed. The low temperature method can be practiced in high volume applications, with good uniformity of the resulting display device. The method steps involve deposition of CNT emitter material over an entire surface of a prefabricated composite structure, and subsequent removal of the CNT emitter material from unwanted portions of the surface using physical methods.

    Abstract translation: 公开了用于在显示装置中用作阴极的纳米颗粒发射体的工业规模方法。 低温方法可以在大容量应用中实现，所得到的显示装置具有良好的均匀性。 方法步骤包括在预制复合结构的整个表面上沉积CNT发射体材料，并且随后使用物理方法将CNT发射体材料从表面的不需要的部分去除。

    BARRIER METAL LAYER FOR A CARBON NANOTUBE FLAT PANEL DISPLAY
    58.
    发明申请
    BARRIER METAL LAYER FOR A CARBON NANOTUBE FLAT PANEL DISPLAY 审中-公开

    公开(公告)号：WO2004064099A3

    公开(公告)日：2004-07-29

    申请号：PCT/US2003/026264

    申请日：2003-08-20

    Applicant: CDREAM DISPLAY CORPORATION

    Inventor： KANG, Simon ,  BAE, Craig ,  KIM, jung, Jao

    IPC: H01J1/05

    Abstract: A flat panel display and a method for forming a carbon nanotube based flat panel display. In one embodiment, the flat panel display includes a barrier layer formed between a catalyst layer upon which microstructures of carbon nanotubes are formed and a resistor layer. The barrier layer acts as an anti diffusion layer between the catalysts layer and the resistor layer to prevent the catalyst layer from diffusing into the resistor layer during the growing of the carbon nanotubes. The barrier layer also enhances the adhesion characteristics of the catalyst layers to enable the uniform growth of the carbon nanotube structures on the catalyst layer.

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