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    Position and speed sensors
    63.
    发明公开
    Position and speed sensors 失效
    位置和速度传感器

    公开(公告)号：EP0182085A3

    公开(公告)日：1988-07-27

    申请号：EP85112999

    申请日：1985-10-14

    Applicant: KOLLMORGEN TECHNOLOGIES CORPORATION

    Inventor： McMullin, Francis, Dr. ,  Byrne, John V. ,  Murray, Aengus

    IPC: G01D05/243 ,  G01D05/22 ,  G01D05/20

    CPC classification number: G01P3/42 ,  G01D5/2053

    Abstract: In a sensor having a drive winding (121) for establishing a forward field, an electrically conductive screen (123) is displaceable relative to a sense winding (122). In the presence of the drive field, eddy currents are generated in the screen to establish a counter-field opposing the forward field, so that the sense winding is shaded by the screen to a varying extent during relative displacement of screen and sense winding and the voltage induced in the sense winding is accordingly correspondingly varied. Application of a high frequency input to the drive winding (121) results in a modulated output from the sense winding (122) which may be demodulated to provide a signal indicative of screen position relative to sense winding. The position signal may be further processed to provide a speed signal. The sensor may assume a multiplicity of linear or planar, rotational and axial or solenoidal configurations.

    Power supply systems for inductive elements
    66.
    发明公开
    Power supply systems for inductive elements 失效
    电感元件供电系统

    公开(公告)号：EP0178615A3

    公开(公告)日：1987-08-05

    申请号：EP85112998

    申请日：1985-10-14

    Applicant: KOLLMORGEN TECHNOLOGIES CORPORATION

    Inventor： Byrne, John V. ,  McMullin, Francis, Dr. ,  Murphy, John ,  Egan, Michael ,  Kenneally, Patrick

    IPC: H02M03/335 ,  H02P06/02

    CPC classification number: H02P25/0925 ,  H02P25/092

    Abstract: In a power supply system, an inductance L is connected between a rail at a voltage V, and a rail at earth through a switch S. When the switch is opened, a current i 1 flowing from the inductance L is directed to a third rail through a diode D, voltage on the third rail rising to V 1 . The system may function as a dc to dc converter with an output voltage between the V 1 rail and the V 2 rail equal to V 2 -V 1 . The system may alternatively be used in, for example, a reluctance motor drive, in which case a further inductance with associated switch and diode is included in the circuit in inverse configuration to prevent excessive voltage rise on the third rail.

    Improved optical scanner
    67.
    发明公开
    Improved optical scanner 失效
    改进的光学扫描仪

    公开(公告)号：EP0175835A3

    公开(公告)日：1987-07-22

    申请号：EP85103725

    申请日：1985-03-28

    Applicant: KOLLMORGEN TECHNOLOGIES CORPORATION

    Inventor： Taylor, William H.

    IPC: G02B26/10

    CPC classification number: G02B26/10

    Abstract: The high speed optical scanning system as disclosed in application No. 84101585 comprises the following improvements: Using a curved strip mirror 26 so that the radiation is reflected from said strip mirror 26 in an arc of focus pomts corresponding the scanning sweep of the concave reflectors 32; introducing image rotation means positioned in the optical path between the concave reflector 32 and the focussing means 38 focussing the collimated beam 262 onto the detection means 40; suppressing spurious radiation by covering spurious radiation emitting surfaces (256, 2581 with reflective material; and orienting the reflective surfaces to reflect radiation from the area of said detection means 40 back to said detection means 40.

    Gallium arsenide crystals and process for growing same
    68.
    发明公开
    Gallium arsenide crystals and process for growing same 失效
    Galliumarsenidkristalle und Verfahren zum Herstellen dieser Kristalle。

    公开(公告)号：EP0222404A1

    公开(公告)日：1987-05-20

    申请号：EP86115801.2

    申请日：1986-11-13

    Applicant: KOLLMORGEN TECHNOLOGIES CORPORATION

    Inventor： Allred, Worth P.

    IPC: C30B11/00 ,  C30B35/00

    CPC classification number: C30B11/002

    Abstract: A modified "Horizontal Bridgman" process for growing undoped compound single crystals, preferably GaAs crystals, is claimed. The crystal is grown in a boat (305) consisting of pyrolytic boron nitride covered with a layer of powdered B₂O₃ (310) or boric acid, thus achieving single crystals with less than 3000 dis­locations or etch pits per cm² and a resistivity of 10⁸ ohm-cm or more, and a resistivity after conversion degradation of not less than 5 × 10⁶ ohm-cm. In addition, the presence of a small amount of oxygen (340) for combining with silicon reduces silicon contamination of the formed GaAs crystals.

    Abstract translation: 要求保护用于生长未掺杂化合物单晶，优选GaAs晶体的改进的“水平布里奇曼”方法。 将晶体生长在由热解氮化硼组成的船（305）中，该热解氮化硼覆盖有一层粉末状的B2O3（310）或硼酸，从而获得具有小于3000个位错或每厘米2的蚀刻坑的单晶，并且电阻率 10 8Ω·cm以上，转化后的电阻率降低至5×10 -6 ohm-cm以上。 此外，与硅结合的少量氧（340）的存在降低了所形成的GaAs晶体的硅污染。

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