公开(公告)号：US20010021572A1

公开(公告)日：2001-09-13

申请号：US09748436

申请日：2000-12-26

Applicant: Matsushita Electronics Corporation

Inventor： Kenzi Orita ,  Masahiro Ishida ,  Masaaki Yuri

IPC: H01L021/00 ,  C30B001/00 ,  H01L021/36 ,  H01L021/477

CPC classification number: H01L21/0242 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/34333

Abstract: A method for producing a semiconductor device of the present invention includes: heating a first semiconductor layer made of a Group III nitride-based compound semiconductor in gas containing nitrogen atoms; and growing a second semiconductor layer made of a Group III nitride-based compound semiconductor on the first semiconductor layer.

Abstract translation: 本发明的半导体装置的制造方法包括：在含有氮原子的气体中加热由III族氮化物系化合物半导体构成的第一半导体层; 以及在所述第一半导体层上生长由III族氮化物基化合物半导体制成的第二半导体层。

公开(公告)号：US20010019530A1

公开(公告)日：2001-09-06

申请号：US09793675

申请日：2001-02-26

Applicant: Matsushita Electronics Corporation

Inventor： Yukio Saitoh ,  Shoichi Takasuka ,  Naoki Nakanishi ,  Hideyuki Nakanishi

IPC: G11B007/125 ,  G11B007/135

CPC classification number: G11B7/123

Abstract: A semiconductor laser device is provided which can carry out recording and reproduction with respect to optical disks with different formats. In this semiconductor laser device, a receiving/emitting optics integrated substrate, in which two semiconductor laser elements with different emission wavelengths and a plurality of receiving optics are integrated, is disposed in a case and is sealed with a hologram element. A composite prism is placed on the hologram element. The distances, when measured in air, from the two semiconductor laser elements to a focusing means, for example, a collimator lens are set to be substantially equal. Thus, a small and inexpensive semiconductor laser device can be obtained. In addition, a single collimator lens can be employed, and thus the optical configuration is facilitated.

Abstract translation: 提供一种能够对不同格式的光盘执行记录和再现的半导体激光装置。 在该半导体激光器件中，将具有不同发射波长的两个半导体激光元件和多个接收光学元件集成在一起的接收/发射光学器件集成基板设置在壳体中并用全息元件密封。 复合棱镜放置在全息元件上。 在空气中测量时，从两个半导体激光元件到聚焦装置（例如准直透镜）的距离被设定为基本相等。 因此，可以获得小而便宜的半导体激光器件。 另外，可以采用单个准直透镜，因此有助于光学结构。

公开(公告)号：US20010000121A1

公开(公告)日：2001-04-05

申请号：US09726844

申请日：2000-11-30

Applicant: Matsushita Electronics Corporation

Inventor： Kazuhisa Tanaka ,  Takeshi Saitoh ,  Masaru Ikeda ,  Tomoyuki Seki

IPC: H01J061/40

CPC classification number: C03C17/005 ,  C03C17/04 ,  H01J5/08 ,  H01J61/025 ,  H01J61/04 ,  H01J61/35

Abstract: A greensheet comprising an inorganic pigment and an inorganic matrix component is applied to a surface of a glass substrate and fired for fixing. The formed shading film has a portion whose thickness is 90% or more of the maximum thickness of the shading film within the range of 0.5 mm from an edge of the shading film. Thus, a shading film that has distinct end faces and has an excellent thickness uniformity can be formed with a good positional accuracy. Therefore, a lamp having a highly precise light distribution property can be obtained. In addition, a lamp having such a property can be obtained with a few steps and at a low cost.

Abstract translation: 将包含无机颜料和无机基质成分的毛坯涂布在玻璃基板的表面上并点火固定。 所形成的遮光膜的厚度为遮光膜的最大厚度的90％以上，与遮光膜的边缘成0.5mm以内的部分。 因此，可以以良好的位置精度形成具有不同端面且具有优异的厚度均匀性的遮光膜。 因此，可以获得具有高精度配光性能的灯。 此外，可以以几个步骤并且以低成本获得具有这种性质的灯。

公开(公告)号：US20030141554A1

公开(公告)日：2003-07-31

申请号：US10356501

申请日：2003-02-03

Applicant: MATSUSHITA ELECTRONICS CORPORATION

Inventor： Takashi Uehara ,  Masato Kanazawa

IPC: H01L031/119 ,  H01L031/062 ,  H01L031/113 ,  H01L029/94 ,  H01L029/76

CPC classification number: H01L21/76897 ,  H01L21/28061 ,  H01L29/4941 ,  H01L29/6656

Abstract: A gate electrode is made up of a lower electrode of polysilicon and an upper electrode including a low-resistance film. A nitride sidewall is formed to cover at least the side faces of an insulator cap and the upper electrode. A pad oxide film is formed to cover at least part of the side faces of the lower electrode and part of the upper surface of a semiconductor substrate. Since a second nitride sidewall is formed to cover the first nitride sidewall and the pad oxide film, a self-aligned contact hole can be formed by etching. As a result, a semiconductor device with a highly reliable self-aligned contact can be obtained.

Abstract translation: 栅电极由多晶硅的下电极和包括低电阻膜的上电极组成。 氮化物侧壁形成为至少覆盖绝缘体盖和上电极的侧面。 形成衬垫氧化膜以覆盖下电极的侧面的至少一部分和半导体衬底的上表面的一部分。 由于形成第二氮化物侧壁以覆盖第一氮化物侧壁和衬垫氧化物膜，因此可以通过蚀刻形成自对准接触孔。 结果，可以获得具有高度可靠的自对准接触的半导体器件。

公开(公告)号：US20030094698A1

公开(公告)日：2003-05-22

申请号：US10330152

申请日：2002-12-30

Applicant: Matsushita Electronics Corporation

Inventor： Nobuhiro Jiwari ,  Shinichi Imai

IPC: H01L023/48 ,  H01L023/52 ,  H01L029/40

CPC classification number: H01L21/0212 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3127

Abstract: A fluorine-containing organic film having a relative dielectric constant of 4 or less is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. During the deposition of the fluorine-containing organic film, a scavenger gas for scavenging fluorine constituting the fluorocarbon is mixed in the material gas. The proportion of the mixed scavenger gas in the material gas is changed to adjust the mechanical strength and relative dielectric constant of the fluorine-containing organic film.

公开(公告)号：US20020182802A1

公开(公告)日：2002-12-05

申请号：US10194323

申请日：2002-07-15

Applicant: MATSUSHITA ELECTRONICS CORPORATION

Inventor： Keisuke Tanaka ,  Yoshihisa Nagano ,  Toyoji Ito ,  Takumi Mikawa

IPC: H01L021/00 ,  H01L021/8242 ,  H01L021/20

CPC classification number: H01L28/55 ,  H01L21/02052 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/76816

Abstract: A capacitor includes lower electrode, capacitive insulating film, upper electrode and passivation film that are formed in this order on a substrate. The capacitive insulating film is made of an insulating metal oxide, the metal oxide being a ferroelectric or a dielectric with a high relative dielectric constant. At least one contact hole is formed in the passivation film to connect the lower electrode to an interconnect for the lower electrode or the upper electrode to an interconnect for the upper electrode. The opening area of the contact hole is equal to or smaller than 5 nullm2.

Abstract translation: 电容器包括在基板上依次形成的下电极，电容绝缘膜，上电极和钝化膜。 电容绝缘膜由绝缘金属氧化物制成，金属氧化物是铁电体或具有高相对介电常数的电介质。 在钝化膜中形成至少一个接触孔，以将下电极与下电极或上电极的互连连接成上电极的互连。 接触孔的开口面积等于或小于5mum2。

公开(公告)号：US20020134509A1

公开(公告)日：2002-09-26

申请号：US10067966

申请日：2002-02-08

Applicant: Matsushita Electronics Corporation

Inventor： Mitsuhiro Ohkuni

IPC: C23F001/00

CPC classification number: H01J37/321 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32137

Abstract: In a chamber, there are provided a sample stage on which a semiconductor substrate is placed, a gas inlet port for introducing etching gas, and a gas outlet port for exhausting the gas. A slide valve having a valve element which rotates relative to a valve seat is provided between the sample stage and the gas outlet port to adjust the amount of gas exhausted from the gas outlet port with the rotation of the valve element. A spiral coil for generating a high-frequency induction field and thereby changing the etching gas into a plasma is rotatably provided over the chamber. Rotative driving means rotates the spiral coil in response to the rotation of the valve element of the slide valve such that the higher-voltage region of the spiral coil approximately coincides with the exhaust-side region of the slide valve.

公开(公告)号：US20010041373A1

公开(公告)日：2001-11-15

申请号：US09843230

申请日：2001-04-26

Applicant: Matsushita Electronics Corporation

Inventor： Shinichiro Hayashi ,  Tatsuo Otsuki

IPC: H01L021/00 ,  H01L021/8242 ,  H01L021/20

CPC classification number: H01L27/11502 ,  H01L21/768 ,  H01L28/55 ,  H01L28/60

Abstract: A ferroelectric thin film capacitor has smooth electrodes permitting comparatively stronger polarization, less fatigue, and less imprint, as the ferroelectric capacitor ages. The smooth electrode surfaces are produced by carefully controlled drying, soft baking, and annealing conditions.

Abstract translation: 铁电薄膜电容器具有平滑的电极，允许相对较强的极化，较少的疲劳和较少的压印，因为铁电电容器老化。 光滑的电极表面是通过仔细控制的干燥，软烘烤和退火条件生产的。

公开(公告)号：US20010020815A1

公开(公告)日：2001-09-13

申请号：US09854741

申请日：2001-05-14

Applicant: Matsushita Electronics Corporation

Inventor： Katsumi Mitsuda ,  Hiroo Terada

IPC: H01J029/80

CPC classification number: H01J29/07 ,  H01J2229/0788

Abstract: A color cathode ray tube comprises (i) a glass bulb comprising a substantially rectangular panel, on which phosphors of a plurality of colors are arranged, a funnel that is connected to a rear side of the panel, and a neck portion formed at a rear side of the funnel, in which an in-line electron gun for emitting an electron beam is arranged; (ii) a substantially rectangular shadow mask having a plurality of apertures that are arranged in correspondence with the phosphors on the panel; and (iii) a substantially rectangular mask frame having a wall portion that supports opposing skirt portions of the shadow mask. The surface of the shadow mask with the apertures is convex towards the panel. A central portion of the opposing skirt portion is convex in a direction of the tube axis on the side of the electron gun. Processing warps such as wrinkles in the skirt portions of the shadow mask are avoided, and a color cathode ray tube with good color rendition is obtained.

Abstract translation: 一种彩色阴极射线管，包括：（i）玻璃灯泡，包括大致矩形的面板，多个颜色的荧光体布置在其上，连接到面板的后侧的漏斗和形成在后面的颈部 漏斗的一侧，其中布置有用于发射电子束的直列电子枪; （ii）基本上矩形的荫罩，具有与所述面板上的荧光体对应地布置的多个孔; 和（iii）基本上矩形的荫罩框架，其具有支撑荫罩相对的裙部的壁部分。 具有孔的荫罩表面朝向面板凸出。 相对的裙部的中心部分在电子枪一侧的管轴方向上是凸的。 避免了荫罩的裙部的皱纹等加工翘曲，得到色彩再现的彩色阴极射线管。

公开(公告)号：US20010019239A1

公开(公告)日：2001-09-06

申请号：US09769601

申请日：2001-01-25

Applicant: Matsushita Electronics Corporation

Inventor： Satoru Nakagawa

IPC: H01K001/04 ,  H01J001/14

CPC classification number: H01J9/047 ,  H01J1/28 ,  H01J9/042

Abstract: An impregnated cathode whose initial electron emitting performance, lifetime property, and insulating property for an electron gun are excellent and that is suitable for mass production, and a method for manufacturing the same. In the impregnated cathode, the porosity of the sintered body of porous metal is continuously increased as the distance in the depth direction from an electron emitting face is increased. A pellet of sintered body of metal raw material has pores in it. The pores are filled with electron emitting material. The porosity is continuously increased as the distance in the depth direction from an electron emitting face is increased. Thus, since the discontinuity inside the pellet is not formed, a reaction generating free Ba continuously and smoothly proceeds on the entire pellet. In addition, since raw material powder having more than one kind of particle size is not necessary to be used, the manufacturing process can be simplified. Moreover, various functions such as lifetime property, etc. can be improved by making the porosity and porosity distribution in a certain range.