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公开(公告)号：KR1020110136142A
公开(公告)日：2011-12-21
申请号：KR1020100055958
申请日：2010-06-14
Applicant: (주)에스엔텍
IPC: H01L31/0445 , H01L31/18 , H01L21/02
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/0445 , H01L21/02 , H01L31/18
Abstract: PURPOSE: A method for controlling the temperature of a substrate is provided to perform a stable deposition process by preventing overshoot. CONSTITUTION: A substrate temperature rises(S1). A risen substrate temperature is measured(S2). A target temperature is reset corresponding to a measured substrate temperature(S3). The substrate temperature rises according to a reset target temperature(S4). A first step process to fourth step process(S1-S4) are repeated(S5).
Abstract translation: 目的：提供一种用于控制基板温度的方法，以通过防止过冲来执行稳定的沉积工艺。 构成：衬底温度升高（S1）。 测量升高的衬底温度（S2）。 根据测量的基板温度对目标温度进行复位（S3）。 基板温度根据复位目标温度升高（S4）。 重复第一步骤至第四步骤（S1-S4）（S5）。
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公开(公告)号：KR1020110135463A
公开(公告)日：2011-12-19
申请号：KR1020100055191
申请日：2010-06-11
Applicant: (주)에스엔텍
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/18 , H01L31/04
Abstract: PURPOSE: A deposition control method is provided to steadily control the deposition of a metal material by precisely controlling the temperature of first and second path vacuum evaporation sources. CONSTITUTION: The temperature of a vacuum evaporation source is primarily controlled in order to be rising to initial fixed target temperature(S1). Each metal material of the vacuum evaporation source evaporates to initial fixed target deposition rate by secondarily controlling the temperature of the vacuum evaporation source when the vacuum evaporation source is rising to the initial fixed target temperature by a first control. The metal material is deposited on a substrate when the metal material which is evaporated is arrived to the initial fixed target deposition rate(S3).
Abstract translation: 目的：提供沉积控制方法，通过精确控制第一和第二路径真空蒸发源的温度来稳定地控制金属材料的沉积。 构成：主要控制真空蒸发源的温度以升至初始固定目标温度（S1）。 当真空蒸发源通过第一控制上升到初始固定目标温度时，通过二次控制真空蒸发源的温度，真空蒸发源的每个金属材料蒸发到初始固定目标沉积速率。 当蒸发的金属材料达到初始固定目标沉积速率时，金属材料沉积在基板上（S3）。
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公开(公告)号：KR101074475B1
公开(公告)日：2011-10-17
申请号：KR1020080100292
申请日：2008-10-13
Applicant: (주)에스엔텍
Abstract: 본발명은진공공정용반송장치및 이를구비한진공장치에관한것으로, 보다자세하게는간단한구성으로이루어져있어소음, 마찰에의한파티클발생, 마모문제등을해결할수 있을뿐만아니라진공장치내부, 특히진공챔버사이를이동함에있어별도의장치의도움없이도원활하게이동할수 있도록구성된진공공정용반송장치및 이를구비한진공장치에관한것이다.
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公开(公告)号：KR1020110083584A
公开(公告)日：2011-07-20
申请号：KR1020110064369
申请日：2011-06-30
Applicant: (주)에스엔텍
IPC: C23C14/35 , H01L21/203
Abstract: PURPOSE: A cylinder-shaped sputtering cathode is provided to maximize a utilization ratio of a target material by correcting the change of magnetic field according to the thickness variance of the target material. CONSTITUTION: A cylinder-shaped sputtering cathode comprises an outer tube(100), an inner tube(200), and a magnet part. The target material is formed in a fixed surface of the outer tube. The outer tube provides the power source. The inner tube is formed inside the outer tube. The magnet part is formed inside the inner tube. The magnet part comprises the permanent magnet. The outer tube and inner tube are spaced from each other with a fixed distance in order form a water cooling space(220). The cooling water flows through the water cooling space.
Abstract translation: 目的：提供圆柱形溅射阴极，通过根据目标材料的厚度变化校正磁场的变化来最大化目标材料的利用率。 构成：圆柱形溅射阴极包括外管（100），内管（200）和磁体部分。 目标材料形成在外管的固定表面中。 外管提供电源。 内管形成在外管的内部。 磁体部分形成在内管的内部。 磁体部分包括永磁体。 外管和内管彼此隔开一定距离，以形成水冷却空间（220）。 冷却水流过水冷却空间。
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公开(公告)号：KR1020100041218A
公开(公告)日：2010-04-22
申请号：KR1020080100286
申请日：2008-10-13
Applicant: (주)에스엔텍
IPC: H01L21/203
CPC classification number: H01J37/3458 , H01J37/3405 , H01J37/3455
Abstract: PURPOSE: A cylindrical sputtering cathode and a sputtering device including the same are provided to form a uniform magnetic field on the surface of a target using the rotating magnetic flux principle. CONSTITUTION: A double jacket(100) includes an external wall and an internal wall which is spaced apart for the external wall with a gap. A target unit(120) is arranged on the pre-set region of the external wall. A magnetic field generation unit(200) is arranged in the double jacket. The magnetic field generation unit generates a magnetic field which is parallel to the surface of the target unit. A coolant flows between the external wall and the internal wall.
Abstract translation: 目的：提供一种圆柱形溅射阴极和包括该溅射阴极的溅射装置，以使用旋转磁通原理在靶的表面上形成均匀的磁场。 构成：双层护套（100）包括一个外壁和一个内壁，内墙与外壁隔开间隙。 目标单元（120）布置在外壁的预设区域上。 在双层夹套中布置有磁场产生单元（200）。 磁场产生单元产生平行于目标单元的表面的磁场。 冷却剂在外壁和内壁之间流动。
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Patent Agency Ranking
公开(公告)号：KR100817477B1
公开(公告)日：2008-03-27
申请号：KR1020070017904
申请日：2007-02-22
Applicant: (주)에스엔텍
CPC classification number: H01J37/32541 , H01J37/32522 , H01J37/32559 , H01J2237/3355 , H01L2224/80013
Abstract: A plasma cleaning device is provided to form the plasma having a desired shape and to process various objects by varying an electrode structure of an electrode bar according to the object. A plasma cleaning device(200) comprises a chamber(210), a plurality of electrode bars(220), a pair of electrode plates(230), insulating members(240), and nuts(250). A plurality of first holes for electrode bars is formed in both side of the chamber. The electrode bar is passed through the hole, and a central part of the electrode bar is positioned inside the chamber and both ends of the electrode bar are exposed to the outside of the chamber. The electrode plates have a plurality of second holes for the electrode bars, having a bigger diameter than an outer diameter of the electrode bar. The insulating members are intervened among the first holes, electrode bars, and electrode plates. The insulating members seal the inside of the chamber and insulate the first holes, electrode bars, and electrode plates. The nut connects the electrode bar and the electrode plate electrically, and fixes the electrode plate.
Abstract translation: 提供等离子体清洁装置以形成具有期望形状的等离子体，并且通过根据目的改变电极棒的电极结构来处理各种物体。 等离子体清洁装置（200）包括室（210），多个电极棒（220），一对电极板（230），绝缘构件（240）和螺母（250）。 多个用于电极棒的第一孔形成在腔室的两侧。 电极棒穿过孔，并且电极棒的中心部分位于腔室内部，电极棒的两端暴露于腔室的外部。 电极板具有用于电极棒的多个第二孔，其直径大于电极棒的外径。 绝缘构件介于第一孔，电极棒和电极板之间。 绝缘构件密封室的内部并绝缘第一孔，电极棒和电极板。 螺母电连接电极棒和电极板，并固定电极板。
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公开(公告)号：KR100691618B1
公开(公告)日：2007-03-09
申请号：KR1020050040548
申请日：2005-05-16
IPC: H01L21/205
Abstract: 본 발명은, 주입구를 통해 주입된 가스로부터 극성을 갖는 이온빔을 추출하는 이온소오스와, 상기 이온소오스의 한쪽 단부에 위치하며, 특정 극성의 이온빔을 가속시키는 복수개의 그리드홀이 형성된 그리드 어셈블리 및, 상기 그리드 어셈블리의 그리드홀에 대응하는 복수개의 반사체홀이 형성되어 있으며, 상기 그리드홀을 통과한 이온빔을 상기 반사체홀에서 반사시켜 중성빔으로 전환시키는 반사체로 구성되는 중성빔발생장치와, 상기 반사체의 단부에 위치되고, 주입구를 통해 가스가 주입될 수 있으며, 상기 중성빔의 진행경로상에 피처리기판을 위치시킬 수 있는 스테이지를 포함하는 반응챔버를 구비하여 구성되고, 상기 반사체의 반사체홀은, 상기 그리드 어셈블리에서 가속된 플럭스가 입사되는 입사면에서의 플럭스 입사면적(A1) 보다 반사체에서 출사되는 중성빔 플럭스의 출사면적(A2)이 크게되도록 형성된다.
중성빔, 그리드, 반사체, 이온빔, 입사각, 증착-
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公开(公告)号：KR101972576B1
公开(公告)日：2019-04-26
申请号：KR1020170092038
申请日：2017-07-20
Applicant: (주)에스엔텍
IPC: H01L23/482 , H01L23/373 , H01L23/00
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