Abstract:
PURPOSE: An RGBW LCD is provided to modify the arrangement of pixels for improving the luminance of the LCD by 50-70% more than an RGB LCD by white pixels without any additional design or driving. CONSTITUTION: An RGBW LCD includes pixel groups formed of mth pixel line(1X) and nth pixel line(2X), wherein m and n are respectively odd and even numbers. When a first dot(51) is formed of red, green and blue pixels, and a second dot(52) is formed of red, green and white pixels, the first and second dots are arranged in sequence in the mth pixel line. In the nth pixel line adjacent to the mth pixel line, the mth pixel line is shifted in the line direction by a dot, so that the second and first dots are arranged in sequence in the nth pixel line.
Abstract:
PURPOSE: A reflective-transmissive liquid crystal display device and a method for manufacturing the same are provided to realize a high luminance display simultaneously having high light transmissivity and light reflexibility by optimizing the thickness of a reflective-transmissive electrode. CONSTITUTION: A thin film transistor is formed of a gate electrode(350), a source electrode(770), a drain electrode(760), and an active pattern(550) on a substrate(100). A passivation layer(900) is formed on the thin film transistor and the substrate, having a contact hole exposing the drain electrode. A transparent electrode(1000) is formed on the passivation layer to be connected with the drain electrode through the contact hole. A reflective-transmissive electrode(1100) is formed on the transparent electrode for reflecting light supplied in a direction forwarding the substrate while transmitting light supplied after passing through the substrate.
Abstract:
PURPOSE: A thin film transistor substrate for a reflective liquid crystal display device and a method for fabricating the same are provided to simplify the fabricating procedure by forming an embossing pattern on a photosensitive film for black matrix by using a black positive photosensitive film. CONSTITUTION: A method for fabricating a thin film transistor substrate for a reflective liquid crystal display device includes the steps of forming gate and data wires on an insulating substrate via a gate insulating film covering the gate wires or a semiconductor pattern formed on the gate insulating film on gate electrodes, forming a black matrix insulating film on the data wires and the semiconductor pattern by using a black photosensitive film, and forming a reflecting film connected to drain electrodes by using a conductive material with flexibility on the black matrix insulating film. The insulating film for the black matrix(80) is formed by the sub-steps of doping the photosensitive film, embossing the photosensitive film at positions corresponding to pixel areas by exposing and developing the photosensitive film by using mask, and forming first to third contact holes(101-103) for exposing the drain electrodes(62) and gate and data pads(24,64). The insulating film for the black matrix is flat at positions corresponding to the gate and data pads.
Abstract:
PURPOSE: An exposure mask used for manufacturing a liquid crystal display and a method of exposing a substrate of the liquid crystal display using the mask are provided to enable accurate alignment of shots even in a large-sized substrate. CONSTITUTION: An exposure mask(M) used for manufacturing a liquid crystal display includes the first mask pattern(M1), the second mask pattern(M2), and the third mask(M3) pattern. The first mask pattern is used for exposing the center of a substrate and placed at the center of the exposure mask. The second mask pattern is used for exposing the left part of the substrate and located at the left of the first mask pattern, having the first distance(d1) between the first and second mask patterns. The third mask pattern is used for exposing the right part of the substrate and placed at the right side of the first mask pattern, having the second distance(d2) between the first and third mask patterns. An alignment key is formed in the first mask pattern.
Abstract:
PURPOSE: A thin film transistor substrate of a liquid crystal display and a method for fabricating the substrate are provided to secure adhesive strength between a pad and an output terminal of a tap driving IC. CONSTITUTION: A thin film transistor substrate of a liquid crystal display includes an insulating substrate(10), a gate line formed on the substrate, a gate insulating layer(60) covering the gate line, a semiconductor pattern(70) formed on the gate insulating layer, and a data line formed on the semiconductor pattern or the gate insulating layer. The gate line includes a gate electrode(56) and a gate pad(53), and the data line includes source and drain electrodes(95,96) and a data pad(98). The thin film transistor substrate further has a passivation film(100) and a pixel electrode(112). The passivation film covers the data line and the semiconductor pattern and has the first contact hole(102) exposing the drain electrode and the second contact hole(108) exposing the gate pad or the data pad. The pixel electrode is connected to the drain electrode through the first contact hole.
Abstract:
PURPOSE: A transflective liquid crystal display device and a method for fabricating the same are provided to fabricate the LCD with four or five masks by improving the fabricating procedure and optimize the thickness of thin films for the reflection/transmission electrodes, thereby increasing the light efficiency and achieving the high luminance display. CONSTITUTION: A transflective liquid crystal display device includes thin film transistors formed in first areas of a first substrate(100) with gate electrodes, source electrodes(770), drain electrodes(760) and an active pattern, an organic insulating film(900) formed with contact holes for exposing the drain electrodes, transparent electrodes(1000) formed on a top surface of the organic insulating film to contact the drain electrodes, reflection/transmission electrodes(1100) formed on a top surface of the transparent electrodes for reflecting light supplied in the direction toward the first substrate and transmitting the light supplied via the first substrate, a second substrate having common electrodes facing the reflection/transmission electrodes of the first substrate, a liquid crystal layer implanted between the reflection/transmission electrodes and the common electrodes, and a light supplying unit mounted to a rear surface of the first substrate.
Abstract:
PURPOSE: A thin film transistor substrate is provided to be capable of improving a fabrication yield together with securing an aperture ratio, of minimizing a parasitic capacitance, and of sufficiently securing a sustain capacitance. CONSTITUTION: A data wire includes a data line(20) extended in one direction on an insulation substrate, and RGB color filters(31,32,33) are formed at each pixel on an insulation substrate. The insulation film is formed to cover the data wire and the color filters. A gate wire is formed on the insulation film and includes a gate line(50), which is intersected with the data line(20) so as to define the pixel, and a gate electrode being a branch of the gate line. A gate insulation film is formed on the insulation film to cover the gate wire and has a contact hole(61) for exposing a part of the data line together with the insulation film. A semiconductor layer pattern(70) is formed on the gate insulation film of the gate electrode and has an island shape. An ohmic contact layer pattern is formed on the semiconductor layer pattern. A pixel wire includes a source electrode(112), a drain electrode(111) and a pixel electrode(110) and is formed on the ohmic contact layer pattern. The source electrode(112) is connected to the data line(20) through the contact hole(61). The drain electrode(111) is separated from the source electrode with the gate electrode in the center. The pixel electrode(110) is connected to the drain electrode and is formed at the pixel.
Abstract:
PURPOSE: A method of making a thin film transistor substrate is provided to widen an angle of visual field by making an arrangement direction of liquid crystal molecules of each region formed differently. CONSTITUTION: The method of making a thin film transistor substrate is composed of forming a data wiring comprising a data line(51), a source electrode, a drain electrode and a data pad and forming a passivation insulating film(60) covering data lines(51) and a gate insulating film(20). A photoresist film is coated and exposed by a mask(100) so that a photoresist film pattern(80) is formed which is inclined toward an edge from a center of a pixel region. A passivation film pattern(80) is formed by etching the passivation insulating film(60) by use of the photoresist film pattern(80) as a mask.
Abstract:
PURPOSE: A liquid crystal display device having a repair line is provided to effectively repair a disconnection line generated in three adjacent data lines to each other while removing non-repairable areas. CONSTITUTION: In a liquid crystal display device, the first substrate(1) for a thin film transistor substrate is provided. A plurality of gate lines(10) are formed on the first substrate. A plurality of gate pads are formed in one side end of the gate lines. A PCB substrate(3) for gate is located in the outside of the first substrate and is connected to the gate pads. A PCB substrate(4) for data is located in the outside of the first substrate and is connected to the data pads. The first to third repair lines are formed parallel to each other along the first edge formed with the data pad of the first substrate, the second edge being opposite to the first edge and the third edge being opposite to the gate pad. The first to third repair lines are formed through the PCB substrate for gate on the PCB substrate for data. A connection element connects the upper side end of the first and third repair lines being formed in the first edge of the first substrate, and the part of the first to third repair lines being formed in the PCB substrate for data.
Abstract:
하부막이 상부막에 대해 언더 컷된 이중막 구조의 게이트 전극을 마스크로 반도체 패턴의 전면에 n + 또는 p + 이온을 주입한다. 이 과정에서, 상부 게이트 전극 패턴과 대응되는 영역의 바깥 부분에 위치한 반도체 패턴은 고농도로 도핑되어 소스 및 드레인 영역이 되고, 게이트 전극과 대응되는 부분은 도핑되지 않은 채널 영역이 되며, 채널 영역과 소스 및 드레인 영역의 사이에 게이트 전극과 중첩되지 않으며 도핑되지 않은 오프 셋 영역이 형성된다. 필요에 따라, 게이트 전극의 상부막을 전면 식각으로 제거하고, 하부막을 마스크로 하여 n _ 또는 p _ 이온을 주입하여 소스 및 드레인 영역의 안쪽에 저농도 LDD 영역을 형성한다.