Abstract:
PURPOSE: A method for manufacturing a CIGSe/CISe thin film by the selenization of CIGS/CIS nano particles is provided to improve the efficiency of a solar cell by inducing the high densification of a CIGSe thin film due to lattice expansion. CONSTITUTION: Cu-In-Ga-S or Cu-In-S compound nano particles that are precursors are manufactured(S1). Slurry including precursor nano particles is manufactured(S2). A CIGS or CIS precursor thin film is formed by coating a substrate with the slurry(S3). The precursor thin film is dried(S4). The precursor thin film is thermally processed using vapor selenium(S5). [Reference numerals] (AA) Start; (BB) Is it a desirable thickness?; (CC) End; (S1) Manufacturing CIGS or CIS nanoparticles; (S2) Manufacturing CIGS or CIS nanoparticles based slurry; (S3) Coating slurry with a non-vacuum state; (S4) Drying; (S5) Thermal process with selenization and high temperature
Abstract:
Disclosed is a flue gas absorbent composition which contains a compound and water. The compound has a ring structure and includes terminal primary amine groups and substituted alpha-carbon atoms neighboring the amine groups. Further, a use of a solution of a compound having a ring structure and terminal amine groups as a flue gas absorbent is disclosed. The absorbent composition includes a ring-structure compound having superior absorption ability when compared to conventional absorbents, thereby exhibiting excellent properties, i.e., flue gas absorption rate improved by 50 to 100% and flue gas absorption capacity improved by 200 to 400%, as compared with currently used absorbents such as monoethanolamine (MEA) and 2-amino-2-methyl-propanol (AMP).
Abstract:
PURPOSE: A method for manufacturing a CIS based compound thin film using a rapid thermal process and a method for manufacturing a thin film solar cell using the CIS based compound thin film are provided to improve the efficiency of a light absorbing layer by increasing the crystallization of the CIS based compound thin film. CONSTITUTION: A CIS based compound thin film is formed on a substrate. A thermal selenization process of the CIS based compound thin film is performed by using a rapid thermal process. The CIS based compound thin film includes a CIS compound thin film, a CIGS compound thin film, or CZTS compound thin film. Se vapor is produced by heating Se metal. Se is vacuously deposited on the CIS based compound thin film.
Abstract:
본발명은 a) 투명기판상에산화아연시드층을형성하는단계; b) 산화아연시드층이형성된투명기판을제1 용액에침지하여, 상기산화아연시드층상에제1 AZO막을형성하는단계; 및 c) 제1 AZO막이형성된투명기판을제2 용액에침지하여제1 AZO막상에제2 AZO막을형성하는단계;를포함하며, 상기제1 AZO막및 제2 AZO막은하기관계식 1을만족하는 AZO 이중막의제조방법및 이로부터제조된 AZO 이중막에관한것이다. [관계식 1] P