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公开(公告)号:KR1020040034808A
公开(公告)日:2004-04-29
申请号:KR1020020063423
申请日:2002-10-17
Applicant: 한국전자통신연구원
IPC: H01L21/20
Abstract: PURPOSE: A method for fabricating a silicon carbide layer having silicon nano-dots is provided to emit a deposition process of an active layer or a passivasion layer and form the silicon nano-dot in the silicon carbide layer by controlling a mixing ratio between silicon carbide and silicon. CONSTITUTION: A mixed pulverulent body is formed in slurry by dissolving silicon carbide powders and silicon powders in the solvent(11). A green body is formed by drying the mixed pulverulent body in a molding frame(12). A mixed target of silicon carbide and silicon is formed by dipping the green body in metallic silicon of high purity(13). The mixed target is loaded into a reaction chamber(14). A silicon carbide layer having silicon nano-dots is deposited on a substrate by irradiating laser beam to the mixed target(15).
Abstract translation: 目的:提供一种制造具有硅纳米点的碳化硅层的方法,以发射活性层或钝化层的沉积工艺,并通过控制碳化硅之间的混合比在碳化硅层中形成硅纳米点 和硅。 构成:通过将碳化硅粉末和硅粉溶解在溶剂(11)中,在浆料中形成混合的粉末体。 通过在模制框架(12)中干燥混合的粉末体来形成生坯体。 通过将生坯浸入高纯度金属硅(13)中形成碳化硅和硅的混合靶。 将混合目标装载到反应室(14)中。 通过向混合靶(15)照射激光束,在基板上沉积具有硅纳米点的碳化硅层。
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公开(公告)号:KR101782965B1
公开(公告)日:2017-09-29
申请号:KR1020110124421
申请日:2011-11-25
Applicant: 한국전자통신연구원
Inventor: 박래만
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 태양전지의제조방법및 그에사용되는진공증착설비가제공된다. 그의제조방법은, 기판상에하부전극을형성하는단계와, 상기하부전극상에광 흡수층을형성하는단계와, 상기광 흡수층 상에버퍼층을형성하는단계와, 상기버퍼층 상에윈도우전극층을형성하는단계를포함한다. 여기서, 상기버퍼층의형성단계는, 양이온금속물질을형성하는증착공정과, 상기양이온금속물질내에음이온비 금속물질을확산시키는확산공정을포함할수 있다.
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公开(公告)号:KR1020150115994A
公开(公告)日:2015-10-15
申请号:KR1020140039888
申请日:2014-04-03
Applicant: 한국전자통신연구원
Inventor: 박래만
IPC: G06F3/044
CPC classification number: G06F3/044
Abstract: 본발명은터치감지장치시스템에관한발명으로, 본발명의일실시예에따른터치감지장치는기판및 상기기판위에형성되는복수의전극패턴을포함하는터치감지장치로, 각각의전극패턴은입력단자, 출력단자및 상기입력단자와상기출력단자사이에직렬연결되며복수의터치감지패턴을포함하는터치감지부를포함하며, 상기복수의터치감지패턴중 터치된지점에인접한적어도두 개이상의터치감지패턴사이상호정전용량이발생한다.
Abstract translation: 本发明涉及一种触摸检测装置。 根据本发明的实施例的触摸检测装置包括基板和形成在基板上的电极图案。 每个电极图案包括串联连接在输入端子和输出端子之间的输入端子,输出端子和触摸检测部件,并且包括触摸检测图案。 在与触摸检测图案的触摸点相邻的至少两个触摸检测图案之间产生相互电容。
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公开(公告)号:KR1020150015935A
公开(公告)日:2015-02-11
申请号:KR1020130091998
申请日:2013-08-02
Applicant: 한국전자통신연구원
Inventor: 박래만
IPC: G06F3/044
CPC classification number: G06F3/044 , G06F2203/04103 , G06F2203/04104
Abstract: 본 발명은 터치 스크린 및 그 제조 방법에 관한 것으로 상면 및 상기 상면의 반대면인 하면을 갖는 기판, 상기 상면 상에 제공되고 제 1 방향으로 연장되는 제 1 센서 라인들, 상기 제 1 센서 라인들 상의 층간 절연막들, 상기 층간 절연막들에 의해 상기 제 1 센서 라인들로부터 이격되고 상기 제 1 방향과 교차하는 제 2 방향으로 연장되는 제 2 센서 라인들 및 상기 하면 상에 제공되고 상기 제 2 센서 라인들과 정렬되는 제 3 센서 라인들을 포함하고, 상기 제 1 센서 라인들과 상기 제 3 센서 라인들을 이용하여 근접 터치를 감지하고, 상기 제 1 센서 라인들과 상기 제 2 센서 라인들을 이용하여 멀티 터치를 감지하는 터치 스크린을 제공한다.
Abstract translation: 本发明涉及触摸屏及其制造方法。 触摸屏包括在上表面的相对侧上具有上表面和下表面的基底; 第一传感器线,其布置在上表面上并沿第一方向延伸; 第一传感器线上的层间绝缘膜; 第二传感器线,其通过层间绝缘膜与第一传感器线间隔开并且沿与第一方向相交的第二方向延伸; 以及布置在下表面上并与第二传感器线对齐的第三传感器线。 第一和第三传感器线用于检测接近触摸输入,并且第一和第二传感器线用于检测多点触摸输入。
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公开(公告)号:KR1020140032252A
公开(公告)日:2014-03-14
申请号:KR1020120098923
申请日:2012-09-06
Applicant: 한국전자통신연구원
Inventor: 박래만
IPC: G06F3/041 , G06F3/045 , G06F3/044 , G02F1/1333
CPC classification number: G06F3/044 , G06F3/0412 , G06F3/0414 , G06F3/045 , G06F2203/04106 , G06F2203/04103
Abstract: Disclosed in the present invention is a touch screen display device. The device comprises: a first substrate; a first sensor line extending in a first direction on the first substrate; an optical switching layer on the first sensor line; a second substrate on the optical switching layer; a second sensor line extending in a second direction on the second substrate; an interlayer insulating layer on the second sensor line; and a third sensor line extending in the first direction on the interlayer insulating layer, wherein at least one of the second and third sensor lines senses a variation of current or capacitance from the first sensor line when a distance between the first sensor line and the second substrate is changed.
Abstract translation: 本发明公开了一种触摸屏显示装置。 该装置包括:第一基板; 在所述第一基板上沿第一方向延伸的第一传感器线; 第一传感器线上的光学切换层; 光开关层上的第二基板; 在所述第二基板上沿第二方向延伸的第二传感器线; 第二传感器线上的层间绝缘层; 以及在所述层间绝缘层上沿所述第一方向延伸的第三传感器线,其中当所述第一传感器线和所述第二传感器线之间的距离在所述第二传感器线和所述第二传感器线之间的距离 底物改变。
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公开(公告)号:KR1020130060011A
公开(公告)日:2013-06-07
申请号:KR1020110126283
申请日:2011-11-29
Applicant: 한국전자통신연구원
IPC: H01L31/042 , H01L31/18
CPC classification number: H01L31/022466 , H01L31/022483 , H01L31/046 , H01L31/0465 , H01L31/0749 , Y02E10/541 , Y02P70/521
Abstract: PURPOSE: A solar cell module and a method for manufacturing the same are provided to reduce the process time for forming a transparent electrode layer by using an ionized physical vapor deposition method. CONSTITUTION: A lower electrode layer(20) is discontinuously formed on a substrate(10). A light absorption layer(30) with a first trench(50) is formed on the lower electrode layer. A transparent electrode layer(60) is formed on the light absorption layer. The transparent electrode layer includes a first oxide layer(62), a metal layer(64), and a second oxide layer(66). A second trench(70) separates a unit cell(80).
Abstract translation: 目的:提供太阳能电池模块及其制造方法,以通过使用电离物理气相沉积方法来减少用于形成透明电极层的处理时间。 构成:在基板(10)上不连续地形成下电极层(20)。 具有第一沟槽(50)的光吸收层(30)形成在下电极层上。 在光吸收层上形成透明电极层(60)。 透明电极层包括第一氧化物层(62),金属层(64)和第二氧化物层(66)。 第二沟槽(70)分离单电池(80)。
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公开(公告)号:KR1020130060000A
公开(公告)日:2013-06-07
申请号:KR1020110126267
申请日:2011-11-29
Applicant: 한국전자통신연구원
IPC: H01L31/042 , H01L31/0224 , H01L31/18
CPC classification number: H01L31/0322 , H01L31/0465 , H01L31/0749 , Y02E10/541 , Y02P70/521
Abstract: PURPOSE: A method for manufacturing a solar cell module is provided to form a window electrode layer with high step coverage by using an ionized physical vapor deposition method. CONSTITUTION: A lower electrode layer(20) is formed on a substrate(10). A light absorption layer(30) is formed on the lower electrode layer and the substrate. A first trench(50) for exposing the lower electrode layer is formed by patterning the light absorption layer. A window electrode layer(60) is extended from the upper part of the light absorption layer to the bottom of the first trench. The window electrode layer is formed by using an ionized physical vapor deposition method.
Abstract translation: 目的:提供一种制造太阳能电池模块的方法,通过使用离子化物理气相沉积方法形成具有高台阶覆盖率的窗口电极层。 构成:在基板(10)上形成下电极层(20)。 在下电极层和基板上形成光吸收层(30)。 用于曝光下电极层的第一沟槽(50)通过图案化光吸收层而形成。 窗口电极层(60)从光吸收层的上部延伸到第一沟槽的底部。 通过使用电离物理气相沉积法形成窗口电极层。
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公开(公告)号:KR1020120039305A
公开(公告)日:2012-04-25
申请号:KR1020100100948
申请日:2010-10-15
Applicant: 한국전자통신연구원
Inventor: 박래만
IPC: H01L31/0445 , H01L21/203
CPC classification number: H01L31/0322 , C23C14/0057 , C23C14/0623 , H01L21/02491 , H01L21/02568 , H01L21/0262 , H01L21/02631 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
Abstract: PURPOSE: A method for manufacturing a compound semiconductor solar battery is provided to form a high definition CIGS thin film light absorption layer with a single process without a post-heating process of a precursor by using indium as deposition gas. CONSTITUTION: A substrate in which a back electrode is formed is prepared(S110). A metal target is sputtered under the indium deposition gas mood(S120). A CIGS thin film is formed on the back electrode(S130). The metal target is one among copper, copper/gallium, or copper/gallium/selenium. The indium deposition gas creates indium gas by heating metal indium or organic metal indium in the inner side of a reaction chamber in which the CIGS thin film is formed. The indium deposition gas supplies the indium gas through an indium gas induction pipe by using transferring gas.
Abstract translation: 目的:提供一种制造化合物半导体太阳能电池的方法,以通过使用铟作为沉积气体,通过单一工艺形成高分辨率CIGS薄膜光吸收层,而不需要前体的后加热工艺。 构成:准备形成背面电极的基板(S110)。 在铟沉积气体情绪下溅射金属靶(S120)。 在背面电极上形成CIGS薄膜(S130)。 金属靶是铜,铜/镓或铜/镓/硒之一。 铟沉积气体通过在其中形成CIGS薄膜的反应室的内侧加热金属铟或有机金属铟来产生铟气体。 铟沉积气体通过使用转移气体的铟气体诱导管供给铟气体。
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公开(公告)号:KR1020090065272A
公开(公告)日:2009-06-22
申请号:KR1020070132758
申请日:2007-12-17
Applicant: 한국전자통신연구원
CPC classification number: G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963 , G01N33/48 , G01N23/00
Abstract: A biosensor is provided to lower operation current in sensing part of biomass lowering contact resistance between silicon nanowire and metal electrode. A biosensor comprises a silicon plate(200), source area(210), drain area(220), insulating layer(230) and silicon nano wire(240). The source area and drain area is arranged on the silicon plate. The insulating layer is arranged between source area and drain area. The silicon nano wire comprises defect area(241) and is arranged on the source area and drain area. A method for manufacturing the biosensor comprises: a step of preparing the silicon plate; a step of forming source area and drain area on the silicon plate; a step of arranging the silicon nano wire on the source area and drain area; and a step of irradiating electronic beam in one area of the silicon nano wire to form the defect area.
Abstract translation: 提供生物传感器来降低操作电流,以感测部分生物质降低硅纳米线与金属电极之间的接触电阻。 生物传感器包括硅板(200),源区(210),漏区(220),绝缘层(230)和硅纳米线(240)。 源极区域和漏极区域布置在硅板上。 绝缘层布置在源区和漏区之间。 硅纳米线包括缺陷区(241),并且布置在源区和漏区上。 制造所述生物传感器的方法包括:制备所述硅板的步骤; 在硅板上形成源区和漏区的步骤; 将硅纳米线布置在源极区域和漏极区域上的步骤; 以及在硅纳米线的一个区域中照射电子束以形成缺陷区域的步骤。
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