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公开(公告)号：KR100809401B1
公开(公告)日：2008-03-05
申请号：KR1020060056530
申请日：2006-06-22
Applicant: 한국전자통신연구원
IPC: H01S3/0941
Abstract: 공정 시간을 단축시킬 수 있으며, 노광 한계치 이하의 선폭의 팁을 가지는 광 도파층을 구비한 반도체 레이저 다이오드의 제조방법을 개시한다. 개시된 본 발명은, 화합물 반도체 기판상에 다층의 액티브층을 형성한다음, 상기 다층의 액티브층 상부에 하드 마스크막을 형성한다. 그후, 상기 하드 마스크막 상부에 포토레지스트 패턴을 형성하고, 상기 포토레지스트 패턴과 하드 마스크막의 밀착력을 개선시키기 위해 상기 포토레지스트 패턴을 베이킹한다. 그 후에, 상기 베이킹된 포토레지스트 패턴을 마스크로 하여, 하드 마스크막을 언더컷 식각하여 하드 마스크 패턴을 형성한 다음, 상기 포토레지스트 패턴을 제거하고, 상기 하드 마스크 패턴의 형태로 상기 다층의 액티브층을 식각하여, 광 도파층을 형성한다.
언더컷, BOE, 실리콘 질화막, 광 도파층-
公开(公告)号：KR100744548B1
公开(公告)日：2007-08-01
申请号：KR1020050124176
申请日：2005-12-15
Applicant: 한국전자통신연구원
IPC: H01S3/10
Abstract: 본 발명은 광증폭기, 빔 조종기, 및 로렌드 원 형태를 갖는 오목 회절 격자를 단일 기판에 집적시켜 전기적으로 파장을 가변시킬 수 있는 파장 가변 광원 소자를 제공한다. 본 발명은 빔 조종기 내부의 두 개의 전극에 전기 신호를 인가하여 빔 경로를 조종하고, 조종된 빔의 경로는 회절 격자의 입사각을 변경시켜 발진 파장이 가변됨을 특징으로 한다. 본 발명은 전기적으로 파장 가변을 시키기 때문에 구조적으로 안정적이며, 파장 가변 속도도 빠른 장점을 가진다.
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公开(公告)号：KR1020070059875A
公开(公告)日：2007-06-12
申请号：KR1020060056530
申请日：2006-06-22
Applicant: 한국전자통신연구원
IPC: H01S3/0941
CPC classification number: H01S3/09415 , H01S3/0315 , H01S5/2013 , H01S5/2077
Abstract: A method of manufacturing a semiconductor laser diode with a fine optical waveguide layer is provided to improve an optical output characteristic by manufacturing the reproducible fine optical waveguide layer having a line width under an exposure limit without a long time process by undercut-etching a hard mask film. A method of manufacturing a semiconductor laser diode with a fine optical waveguide layer includes the steps of: forming a multi-layered active layer on a compound semiconductor substrate(100); forming a hard mask film on a top of the multi-layered active layer; forming a photo-resist pattern(140) on a top portion of the hard mask film; baking the photo-resist pattern(140) to improve adhesion between the photo-resist pattern(140) and the hard mask film; forming a hard mask pattern by undercut-etching the hard mask film by using the baked photo-resist pattern(140) as a mask; removing the photo-resist pattern(140); and forming an optical waveguide layer by the multi-layered active layer in a shape of the hard mask pattern.
Abstract translation: 提供一种制造具有精细光波导层的半导体激光二极管的方法，以通过对硬掩模进行底切蚀刻来制造具有暴露极限的线宽度的可再现的精细光波导层，从而提高光输出特性，而不需要长时间的处理 电影。 制造具有精细光波导层的半导体激光二极管的方法包括以下步骤：在化合物半导体衬底（100）上形成多层有源层; 在所述多层有源层的顶部上形成硬掩模膜; 在所述硬掩模膜的顶部上形成光刻胶图案（140）; 烘烤光刻胶图案（140）以改善光刻胶图案（140）和硬掩模膜之间的粘附性; 通过使用烧结光刻胶图案作为掩模，通过对硬掩模膜进行底切蚀刻来形成硬掩模图案; 去除所述光刻胶图案（140）; 以及通过所述多层有源层以硬掩膜图案的形状形成光波导层。
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公开(公告)号：KR1020060034175A
公开(公告)日：2006-04-21
申请号：KR1020040083334
申请日：2004-10-18
Applicant: 한국전자통신연구원
IPC: G02B26/10
CPC classification number: G02B27/095 , G02B19/0009 , G02B19/0052 , G02B26/0875 , G02B27/0977 , G02B2006/12078 , G02B2006/12104 , G02B2006/12145 , G02F1/295
Abstract: 본 발명은 방사형으로 진행하는 광을 편향하는 광 편향기에 관한 것으로, 제1 유효굴절율을 가지는 주변영역; 및 상기 제1 유효굴절율과 다른 제2 유효굴절율을 가지는 소정 형상의 편향패턴 영역을 포함하되, 상기 소정 형상의 편향 패턴 영역에 의해서, 방사형으로 진행하는 광은 특정점에서 출발하여 진행하는 것으로 편향된다. 이를 통해서, 광원의 이동 궤적은 직선, 원, 타원, 포물선 등 다양한 형태가 되도록 설계할 수 있다.
광 편향기, 방사 광, 편향-
公开(公告)号：KR100494225B1
公开(公告)日：2005-06-13
申请号：KR1020030029440
申请日：2003-05-09
Applicant: 한국전자통신연구원
IPC: H01S5/32
Abstract: 본 발명은 광소자 및 광소자의 제조 방법에 관한 것으로, 능동 도파로와 수동 도파로가 집적된 광소자에 있어서, 수동 도파로에 도핑되지 않은 클래딩막을 형성함으로써, 수동 도파로의 광 도파 손실을 줄일 수 있고, 능동 도파로의 전류 누설을 방지하기 위한 별도의 패시베이션막 형성공정을 생략할 수 있는 광소자 및 광소자의 제조 방법을 제공한다.
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Patent Agency Ranking66.发明授权
公开(公告)号：KR100456670B1
公开(公告)日：2004-11-10
申请号：KR1020020061485
申请日：2002-10-09
Applicant: 한국전자통신연구원
IPC: H01S5/12
Abstract: PURPOSE: A distributed reflection laser diode including a spot-size converter and a DFB(Distributed FeedBack) laser diode is provided to increase a single mode yield and an optical output regardless of a phase of a diffraction grid by forming the spot-size converter and the DFB laser diode with one body. CONSTITUTION: A distributed reflection laser diode including a spot-size converter and a DFB laser diode includes a substrate(700), a bottom clad layer(710), a diffraction grid(720), a passive waveguide layer(740), an intermediate clad layer(750), an active layer(760), a top clad layer(770), and a ridge(780). The bottom clad layer(710) is formed on the substrate(700). The diffraction grid(720) is formed on the bottom clad layer. A bottom clad layer and an optical waveguide layer are formed on the diffraction grid. The passive waveguide layer(740) is formed on the optical waveguide layer to transmit beams to the third region. The intermediate clad layer(750) is formed on the passive waveguide layer. The active layer(760) is formed on the intermediate clad layer to transfer the beams from the second region to the passive waveguide layer. The top clad layer(770) is formed on the active layer. The ridge(780) is formed on the top clad layer. The ridge has a tapering structure.
Abstract translation: 目的：提供包括点尺寸转换器和DFB（分布式反馈）激光二极管的分布式反射激光二极管，以通过形成点尺寸转换器来增加单模成品率和光输出，而不管衍射网格的相位如何;以及 具有一个主体的DFB激光二极管。 一种包括点尺寸转换器和DFB激光二极管的分布式反射激光二极管包括衬底（700），底部包层（710），衍射栅格（720），无源波导层（740），中间层 （750），有源层（760），顶部包覆层（770）和脊（780）。 底部包层（710）形成在衬底（700）上。 衍射栅格（720）形成在底部包层上。 在衍射栅格上形成底部包层和光波导层。 无源波导层（740）形成在光波导层上以将光束传输到第三区域。 中间包层（750）形成在无源波导层上。 有源层（760）形成在中间包层上，以将光束从第二区域传输到无源波导层。 顶部包覆层（770）形成在有源层上。 脊（780）形成在顶部包层上。 山脊具有锥形结构。
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公开(公告)号：KR100453814B1
公开(公告)日：2004-10-20
申请号：KR1020020007011
申请日：2002-02-07
Applicant: 한국전자통신연구원
IPC: H01S5/10
CPC classification number: G02B6/124 , H01S5/1203 , H01S5/1215 , H01S5/1231
Abstract: A semiconductor optical device with a differential grating formed by a holography method and a method for manufacturing the same are provided. The provided semiconductor optical device includes an n-type InP substrate, a stack structure on the InP substrate having a waveguide and active layers, a first grating formed under the stack structure and on the InP substrate, and a second grating formed on the stack structure. The provided method for manufacturing the semiconductor optical device forms a first grating on the n-type InP substrate and under the active layer, and forms a second grating on the active layer. The first and second gratings are formed by the holography method.
Abstract translation: 提供了一种通过全息方法形成的具有差分光栅的半导体光学器件及其制造方法。 所提供的半导体光学器件包括n型InP衬底，具有波导和有源层的InP衬底上的堆叠结构，在堆叠结构下和InP衬底上形成的第一光栅以及形成在该堆叠结构上的第二光栅 。 所提供的用于制造半导体光学器件的方法在n型InP衬底上和有源层下方形成第一光栅，并在有源层上形成第二光栅。 第一和第二光栅通过全息方法形成。
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公开(公告)号：KR100444733B1
公开(公告)日：2004-08-16
申请号：KR1020020075921
申请日：2002-12-02
Applicant: 한국전자통신연구원
IPC: G02B6/28
Abstract: PURPOSE: A wavelength conversion type electro-optic clock multiplier is provided to perform simultaneously a process for multiplying a frequency of an optical clock and a process for wavelength conversions providing an optical transmission system combined a WDM(wavelength division multiplexing) with a TDM(time division multiplexing) system with a flexible use. CONSTITUTION: A wavelength conversion type electro-optic clock multiplier includes a first photo coupler, a semiconductor optical amplifier, and a second photo coupler. The first photo coupler(13) is used for dividing the continuous beam of desired wavelength to paths. The semiconductor optical amplifier(16) is used for performing a phase modulation process for the continuous beam passing through the first path of two paths according to an optical clock having an arbitrary wavelength. The second photo coupler(14) is used for coupling the output light source from semiconductor optical amplifier to the continuous beam outputted from the second path of the first photo coupler.
Abstract translation: 目的：提供一种波长转换型电光时钟倍增器，用于同时执行用于倍增光时钟的频率的处理和用于波长转换的处理，从而提供结合了WDM（波分复用）和TDM（时分复用）的光传输系统 多路复用）系统具有灵活的使用。 构成：波长转换型电光时钟倍增器包括第一光耦合器，半导体光放大器和第二光耦合器。 第一光耦合器（13）用于将所需波长的连续光束分成路径。 半导体光放大器（16）用于根据具有任意波长的光时钟对通过两个路径中的第一路径的连续波束进行相位调制处理。 第二光耦合器（14）用于将来自半导体光放大器的输出光源耦合到从第一光耦合器的第二路径输出的连续光束。
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公开(公告)号：KR100425588B1
公开(公告)日：2004-04-01
申请号：KR1020020008750
申请日：2002-02-19
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A method for fabricating an optical integrated circuit is provided to reduce the quantity of an etch byproduct and prevent an incomplete cleaving phenomenon by selectively wet-etching the second clad layer and by dry-etching the first clad layer, a core layer and a substrate. CONSTITUTION: An active device region and a passive device region are defined in a compound substrate(100). The core layer(105a,105b) and the first clad layer(110) are sequentially stacked on the compound substrate. An etch stopper(115) is formed on the first clad layer in the passive device region. A mask pattern for forming a waveguide is formed on the active device region and the passive device region. The passive device region is covered with the first passivation layer. A predetermined thickness of the first clad layer, the core layer and the compound substrate is etched to form an active device waveguide(130) by using the mask pattern in the exposed active device region. The first passivation layer is removed. The second clad layer is formed on the resultant structure. The active device region is covered with the second passivation layer. The second clad layer is wet-etched to expose the mask pattern in the passive device region. The etch stopper is wet-etched to have the type of the mask pattern in the passive device region. The first clad layer, the core layer and the compound substrate are dry-etched by a predetermined thickness to have the mask pattern in the passive device region so that an active device waveguide is formed.
Abstract translation: 目的：提供一种用于制造光学集成电路的方法，以通过选择性地湿法腐蚀第二覆盖层并且通过干法蚀刻第一覆盖层，芯层和第二覆盖层来减少蚀刻副产物的量并且防止不完全裂开现象 基质。 构成：有源器件区域和无源器件区域被限定在复合衬底（100）中。 芯层（105a，105b）和第一覆层（110）顺序堆叠在复合基板上。 在无源器件区域中的第一覆盖层上形成蚀刻阻挡层（115）。 用于形成波导的掩模图案形成在有源器件区域和无源器件区域上。 无源器件区域被第一钝化层覆盖。 通过使用暴露的有源器件区域中的掩模图案来蚀刻预定厚度的第一覆层，核心层和复合衬底以形成有源器件波导（130）。 第一钝化层被去除。 在所得到的结构上形成第二包层。 有源器件区域被第二钝化层覆盖。 湿蚀刻第二覆层以暴露无源器件区域中的掩模图案。 蚀刻停止层被湿蚀刻以具有无源器件区域中的掩模图案的类型。 第一覆盖层，核心层和化合物基板被干蚀刻预定厚度，以在无源器件区域中具有掩模图案，从而形成有源器件波导。
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公开(公告)号：KR100413527B1
公开(公告)日：2004-01-03
申请号：KR1020020005204
申请日：2002-01-29
Applicant: 한국전자통신연구원
IPC: G02B6/13
CPC classification number: H01S5/026 , H01S5/0265
Abstract: A method of fabricating a monolithic integrated semiconductor photonic device is provided. In this method, it is possible to remarkably reduce an optical loss in a passive waveguide by forming a non-doped clad layer around a passive layer. Thus, the passive waveguide can be effectively coupled with an active waveguide. Further, a current confinement layer is formed around an active layer, using the non-doped clad layer. Therefore, an expensive tool such as an ion implanter is not required, thereby decreasing manufacturing costs.
Abstract translation: 提供了一种制造单片集成半导体光子器件的方法。 在该方法中，通过在无源层周围形成非掺杂包层，可以显着降低无源波导中的光损耗。 因此，无源波导可以有效地与有源波导耦合。 此外，使用非掺杂包层在有源层周围形成电流限制层。 因此，不需要昂贵的工具如离子注入机，从而降低了制造成本。
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