公开(公告)号：DE69330542T2

公开(公告)日：2002-06-06

申请号：DE69330542

申请日：1993-09-14

Applicant: CANON KK

Inventor： MORISHITA MASAKAZU ,  SUGAWA SHIGETOSHI ,  KOIZUMI TORU

IPC: H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/07 ,  H01L29/10 ,  H01L29/73 ,  H01L29/739 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76

Abstract: A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.

公开(公告)号：DE69427882D1

公开(公告)日：2001-09-13

申请号：DE69427882

申请日：1994-01-31

Applicant: CANON KK

Inventor： HOSHI JUNICHI ,  SUGAWA SHIGETOSHI ,  INOUE SHUNSUKE ,  HAMAMOTO OSAMU ,  FUKUMOTO YOSHIHIKO ,  GENCHI YUTAKA ,  KAMIO MASARU ,  MIYAWAKI MAMORU

IPC: G02F1/1333 ,  G02F1/1362 ,  G02F1/136

Abstract: A liquid crystal display device comprising of picture element electrodes (25) provided on a first plane of a substrate (21,22) and an opposed electrode (29) placed opposedly to the picture element electrodes, between which a liquid crystal (26) is carried, characterized in that in a region of the substrate corresponding to the picture element electrodes is in the form of a concave hollow portion (23) extending from a second plane opposite the first plane of the substrate towards the first plane, the region being light translucent, and the concave portion (23) having a translucent material (36) enclosed therein.

公开(公告)号：DE69330318D1

公开(公告)日：2001-07-19

申请号：DE69330318

申请日：1993-02-26

Applicant: CANON KK

Inventor： SONO KOICHI ,  MIYAWAKI MAMORU ,  ISHIZAKI AKIRA ,  OGAWA KATSUHISA ,  SAKURAI KATSUHITO ,  SUGAWA SHIGETOSHI ,  KONDO SHIGEKI

IPC: G02F1/1333 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

Abstract: A liquid crystal display device comprises, at least, in a part of a close periphery of the display area of a pixel electrode substrate, a step substantially same as that of the display area.

公开(公告)号：DE69328911D1

公开(公告)日：2000-08-03

申请号：DE69328911

申请日：1993-01-27

Applicant: CANON KK

Inventor： INOUE SHUNSUKE ,  KOIZUMI TORU ,  MIYAWAKI MAMORU ,  SUGAWA SHIGETOSHI

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/208 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

公开(公告)号：DE69229590T2

公开(公告)日：2000-03-30

申请号：DE69229590

申请日：1992-11-06

Applicant: CANON KK

Inventor： KOZUKA HIRAKU ,  SUGAWA SHIGETOSHI ,  YAMANOBE MASATO

IPC: H01L27/146 ,  H01L31/107 ,  H01L27/148

Abstract: A solid-state image sensing apparatus including: a substrate having a charge storage portion capable of storing charges and an output circuit for outputting a signal in accordance with the charges stored in the storage portion; an insulating film formed on the surface of the substrate and having an opening formed above the charge storage portion; and a photosensitive layer formed on the insulating film and electrically connected to the charge storage portion via the opening, wherein an embedded region is formed within the opening and the surface of the insulating film and that of the embedded region are substantially flattened.

公开(公告)号：DE3752221T2

公开(公告)日：1999-03-25

申请号：DE3752221

申请日：1987-07-17

Applicant: CANON KK

Inventor： TANAKA NOBUYOSHI ,  NAKAMURA YOSHIO ,  SUGAWA SHIGETOSHI ,  OHZU HAYAO

IPC: H01L27/146 ,  H04N1/028 ,  H04N5/335 ,  H04N5/353 ,  H04N5/365 ,  H04N5/369 ,  H04N5/374 ,  H04N3/15

公开(公告)号：DE69227602D1

公开(公告)日：1998-12-24

申请号：DE69227602

申请日：1992-01-10

Applicant: CANON KK

Inventor： KOZUKA HIRAKU ,  SUGAWA SHIGETOSHI ,  GOFUKU IHACHIRO

IPC: H01L27/146 ,  H01L31/10 ,  H04N1/028 ,  H01L31/105

Abstract: A photoelectric converting device has non-monorrystalline semiconductor layers of PIN structure laminated on mutually isolated plural pixel electrodes. P- or N-doped layer on the pixel electrode contains at least a microcrystalline structure. N- or P-doped layer on the area other than the pixel electrode is amorphous.

公开(公告)号：AT172056T

公开(公告)日：1998-10-15

申请号：AT87306360

申请日：1987-07-17

Applicant: CANON KK

Inventor： TANAKA NOBUYOSHI ,  NAKAMURA YOSHIO ,  SUGAWA SHIGETOSHI ,  OHZU HAYAO

IPC: H01L27/146 ,  H04N1/028 ,  H04N5/335 ,  H04N5/353 ,  H04N5/365 ,  H04N5/369 ,  H04N5/374 ,  H04N3/15

公开(公告)号：DE69317752T2

公开(公告)日：1998-09-03

申请号：DE69317752

申请日：1993-12-30

Applicant: CANON KK

Inventor： OOZU HAYAO ,  MIYAWAKI MAMORU ,  ISHIZAKI AKIRA ,  SUGAWA SHIGETOSHI

IPC: H01L27/146 ,  H01L27/148 ,  H04N1/00 ,  H04N1/48 ,  H04N5/33 ,  H04N5/372 ,  H04N9/04

Abstract: An image sensor in which a plurality of filters are stacked on a light-receiving portion, and which photoelectrically converts an optical signal into an electrical signal, wherein a plurality of sensor arrays each including a plurality of photoelectric conversion elements for converting an optical signal in a visible light range into an electrical signal by color-separating the optical signal, and a sensor array including a plurality of photoelectric conversion elements for converting an optical signal in an invisible light range into an electrical signal are arranged parallel to each other.

公开(公告)号：DE3856165T2

公开(公告)日：1998-08-27

申请号：DE3856165

申请日：1988-01-28

Applicant: CANON KK

Inventor： SHINOHARA MAHITO ,  HASHIMOTO SEIJI ,  SUGAWA SHIGETOSHI ,  MIYAWAKI MAMORU

IPC: H01L27/146 ,  H04N3/15 ,  H01L27/14

Abstract: A photoelectric conversion apparatus having an array of plural photoelectric conversion cells having semiconductor areas for accumulating photoinduced carriers, in which a gate-insulated transistor is formed with main electrodes composed of the semiconductor areas of neighboring photoelectric conversion cells, for separating the cells and for collective refreshing of the cells.