公开(公告)号：US09653333B2

公开(公告)日：2017-05-16

申请号：US15007687

申请日：2016-01-27

Applicant: EPISTAR CORPORATION

Inventor： Chia-Liang Hsu ,  Yi-Ming Chen ,  Hsin-Chih Chiu

IPC: H01L21/68 ,  H01L33/00 ,  H01L33/02 ,  B65G47/24 ,  H01L21/67 ,  H01L21/66 ,  H01L33/64

CPC classification number: H01L33/62 ,  B65G47/24 ,  H01L21/67092 ,  H01L21/68 ,  H01L21/681 ,  H01L22/26 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/32 ,  H01L33/46 ,  H01L33/641

Abstract: A method of manufacturing a light-emitting device comprises the steps of: providing a semiconductor light-emitting stack having a first connecting surface and a first alignment pattern; providing a substrate having a second connecting surface and a second alignment pattern; detecting the position of the first alignment pattern and the position of the second alignment pattern; and moving at least one of the substrate and the semiconductor light-emitting stack to make the first alignment pattern be aligned with the second alignment pattern.

公开(公告)号：US09337394B2

公开(公告)日：2016-05-10

申请号：US14554488

申请日：2014-11-26

Applicant: Epistar Corporation

Inventor： Yi-Ming Chen ,  Chun-Yu Lin ,  Tsung-Hsien Yang ,  Tzu-Chieh Hsu ,  Kun-De Lin ,  Yao-Ning Chan ,  Chih-Chiang Lu

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/46

CPC classification number: H01L33/382 ,  H01L33/08 ,  H01L33/22 ,  H01L33/46

Abstract: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

Abstract translation: 半导体发光器件包括半导体叠层，其包括侧面，第一表面和与第一表面相对的第二表面，其中半导体堆叠还包括从第一表面延伸到第二表面的导电通孔; 形成在所述第二表面上的透明导电层; 第一焊盘部分和第二焊盘部分，形成在第一表面上并电连接到半导体堆叠; 以及形成在第一焊盘部分和半导体堆叠之间以及在第二焊盘部分和半导体堆叠之间的绝缘层。

公开(公告)号：US09048345B2

公开(公告)日：2015-06-02

申请号：US14196708

申请日：2014-03-04

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Chi-Hsing Chen ,  Hsin-Ying Wang

IPC: H01L33/00 ,  H01L21/02

CPC classification number: H01L33/005 ,  H01L21/02436 ,  H01L21/02664 ,  H01L33/0079

Abstract: A method of forming a light-emitting diode includes: providing a substrate having one or more first openings passing through the substrate; forming a sacrificial layer on the substrate; forming an epitaxial layer on the sacrificial layer; connecting a supporting substrate with the epitaxial layer; and separating the substrate from the epitaxial layer by selectively etching the sacrificial layer.

Abstract translation: 形成发光二极管的方法包括：提供具有穿过基板的一个或多个第一开口的基板; 在所述基板上形成牺牲层; 在牺牲层上形成外延层; 将支撑衬底与所述外延层连接; 以及通过选择性蚀刻牺牲层将衬底与外延层分离。

公开(公告)号：USD725051S1

公开(公告)日：2015-03-24

申请号：US29486520

申请日：2014-03-31

Applicant: Epistar Corporation

Designer： Hui-Fang Kao ,  Chih-Chiang Lu ,  Tzu-Chieh Hsu ,  Yi-Ming Chen

公开(公告)号：US08860046B2

公开(公告)日：2014-10-14

申请号：US13767217

申请日：2013-02-14

Applicant: Epistar corporation

Inventor： Jhih-Sian Wang ,  Chia-Liang Hsu ,  Yi-Ming Chen ,  Yi-Tang Lai

IPC: H01L29/18 ,  H01L27/15 ,  F21K99/00 ,  H01L25/075 ,  F21Y101/02 ,  H01L33/38 ,  F21Y105/00

CPC classification number: H01L25/0753 ,  F21K9/00 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2115/10 ,  H01L27/156 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00

Abstract: A two dimensional array light-emitting diode device is disclosed, which includes a transparent substrate including a first surface; a plurality of adjacent light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units including a plurality of sides and a circumference; and a plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units mentioned above; wherein the sides of each of the light-emitting diode units have a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 μm, the sides are not near the closest light-emitting diode units; wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%.

Abstract translation: 公开了一种二维阵列发光二极管装置，其包括：包括第一表面的透明基板; 布置在第一表面上的多个相邻的发光二极管单元，其中每个发光二极管单元包括多个边和圆周; 以及布置在所述第一表面上的多个导电连接结构，电连接上述多个发光二极管单元; 其中每个发光二极管单元的侧面在最近的发光二极管单元之间具有多个垂直距离，并且当多个垂直距离大于50μm时，侧面不在最近的发光二极管附近 单位; 其中，各个发光二极管单元的发光二极管单元附近的边的总长度与发光二极管单元的周长之比大于50％。