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    Light-emitting device
    1.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11088298B2

    公开(公告)日：2021-08-10

    申请号：US16883742

    申请日：2020-05-26

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu Huang ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Hsin-Chih Chiu

    IPC: H01L33/02 ,  H01L25/075 ,  H01L21/66 ,  H01L33/62 ,  H01L23/00 ,  H01L33/36

    Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

    Method of selectively transferring semiconductor device
    2.
    发明授权
    Method of selectively transferring semiconductor device 有权

    公开(公告)号：US10693034B2

    公开(公告)日：2020-06-23

    申请号：US15683041

    申请日：2017-08-22

    Applicant: EPISTAR CORPORATION

    Inventor： Hao-Min Ku ,  You-Hsien Chang ,  Shih-I Chen ,  Fu-Chun Tsai ,  Hsin-Chih Chiu

    IPC: H01L21/683 ,  H01L33/62 ,  H01L33/00

    Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

    Light-emitting device and manufacturing method thereof
    6.
    发明授权
    Light-emitting device and manufacturing method thereof 有权

    公开(公告)号：US09705029B2

    公开(公告)日：2017-07-11

    申请号：US14901415

    申请日：2013-06-26

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu Huang ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Hsin-Chih Chiu

    IPC: H01L33/62 ,  H01L33/02 ,  H01L25/075 ,  H01L23/00 ,  H01L21/66 ,  H01L33/36

    CPC classification number: H01L33/02 ,  H01L22/12 ,  H01L22/14 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/36 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack is patterned and comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface.

    Method of selectively transferring semiconductor device
    10.
    发明授权
    Method of selectively transferring semiconductor device 有权

    公开(公告)号：US11211522B2

    公开(公告)日：2021-12-28

    申请号：US16908167

    申请日：2020-06-22

    Applicant: EPISTAR CORPORATION

    Inventor： Hao-Min Ku ,  You-Hsien Chang ,  Shih-I Chen ,  Fu-Chun Tsai ,  Hsin-Chih Chiu

    IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

    Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.

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