公开(公告)号：US12230744B2

公开(公告)日：2025-02-18

申请号：US18370649

申请日：2023-09-20

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Cheng-Lin Lu ,  Chih-Hao Chen ,  Chi-Shiang Hsu ,  I-Lun Ma ,  Meng-Hsiang Hong ,  Hsin-Ying Wang ,  Kuo-Ching Hung ,  Yi-Hung Lin

IPC: H01L33/54 ,  H01L25/075 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/52

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US11705545B2

公开(公告)日：2023-07-18

申请号：US17306141

申请日：2021-05-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56 ,  H01L33/22 ,  H01L33/44 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L33/60 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US09412906B2

公开(公告)日：2016-08-09

申请号：US14185586

申请日：2014-02-20

Applicant: Epistar Corporation

Inventor： Chien-Kai Chung ,  Po-Shun Chiu ,  Hsin-Ying Wang ,  De-Shan Kuo ,  Tsun-Kai Ko ,  Yu-Ting Huang

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/20

CPC classification number: H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382

Abstract: A light-emitting device comprises: a light-emitting stack comprising a first side, a second side opposite to the first side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, and the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode comprising a first section extended from the first electrode pad toward the second electrode pad, and a second section extended from the first electrode pad toward the first side.

Abstract translation: 发光装置包括：发光堆叠，包括第一侧，与第一侧相对的第二侧和在第一侧和第二侧之间的上表面; 形成在上表面上的第一电极焊盘; 形成在所述上表面上的第二电极焊盘，并且所述第一电极焊盘比所述第二电极焊盘更靠近所述第一侧; 以及第一延伸电极，包括从第一电极焊盘朝向第二电极焊盘延伸的第一部分，以及从第一电极焊盘朝向第一侧延伸的第二部分。

公开(公告)号：US12155019B2

公开(公告)日：2024-11-26

申请号：US18230119

申请日：2023-08-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US11757077B2

公开(公告)日：2023-09-12

申请号：US17306136

申请日：2021-05-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

CPC classification number: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US10950652B2

公开(公告)日：2021-03-16

申请号：US16037862

申请日：2018-07-17

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Shen ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Schang-Jing Hon ,  Sheng-Jie Hsu ,  De-Shan Kuo ,  Hsin-Ying Wang ,  Chiu-Lin Yao ,  Chien-Fu Huang ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44

Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second structure light-emitting unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit includes a lower layer having a first conductivity and an upper layer having a second conductivity; a trench between the first light-emitting structure unit and the second light-emitting structure unit, including a bottom portion which is a part of the top surface; an isolation layer, disposed on the trench and covering the bottom portion; and an electrical connection, electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the lower layer includes an inclined sidewall and the electrical connection contacts the inclined sidewall.

公开(公告)号：USD743355S1

公开(公告)日：2015-11-17

申请号：US29497212

申请日：2014-07-22

Applicant: EPISTAR CORPORATION

Designer： Hsin-Ying Wang ,  Chien-Kai Chung ,  Yu-Ting Huang ,  Tsun-Kai Ko

公开(公告)号：US20150236205A1

公开(公告)日：2015-08-20

申请号：US14185586

申请日：2014-02-20

Applicant: Epistar Corporation

Inventor： Chien-Kai CHUNG ,  Po-Shun CHIU ,  Hsin-Ying Wang ,  De-Shan KUO ,  Tsun-Kai Ko ,  Yu-Ting Huang

IPC: H01L33/38 ,  H01L33/22

CPC classification number: H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382

Abstract: A light-emitting device comprises: a light-emitting stack comprising a first side, a second side opposite to the first side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, and the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode comprising a first section extended from the first electrode pad toward the second electrode pad, and a second section extended from the first electrode pad toward the first side.

Abstract translation: 发光装置包括：发光堆叠，包括第一侧，与第一侧相对的第二侧和在第一侧和第二侧之间的上表面; 形成在上表面上的第一电极焊盘; 形成在所述上表面上的第二电极焊盘，并且所述第一电极焊盘比所述第二电极焊盘更靠近所述第一侧; 以及第一延伸电极，包括从第一电极焊盘朝向第二电极焊盘延伸的第一部分，以及从第一电极焊盘朝向第一侧延伸的第二部分。

公开(公告)号：US11990575B2

公开(公告)日：2024-05-21

申请号：US18205920

申请日：2023-06-05

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L21/78 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56 ,  H01L33/00 ,  H01L33/22

CPC classification number: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US11437427B2

公开(公告)日：2022-09-06

申请号：US16750227

申请日：2020-01-23

Applicant: EPISTAR CORPORATION

Inventor： Po-Shun Chiu ,  Tsung-Hsun Chiang ,  Liang-Sheng Chi ,  Jing Jiang ,  Jie Chen ,  Tzung-Shiun Yeh ,  Hsin-Ying Wang ,  Hui-Chun Yeh ,  Chien-Fu Shen

IPC: H01L27/15 ,  H01L33/36 ,  F21K9/00 ,  H01L33/62

Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.