公开(公告)号：US12266737B2

公开(公告)日：2025-04-01

申请号：US17218906

申请日：2021-03-31

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming Chen ,  Tsung-Hsien Yang

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42 ,  H01L33/48 ,  H01L33/62 ,  H01L33/32

Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

公开(公告)号：US12125956B2

公开(公告)日：2024-10-22

申请号：US17203402

申请日：2021-03-16

Applicant: EPISTAR CORPORATION

Inventor： Yu-Tsu Lee ,  Yi-Yang Chiu ,  Chun-Wei Chang ,  Min-Hao Yang ,  Wei-Jen Hsueh ,  Yi-Ming Chen ,  Shih-Chang Lee ,  Chung-Hao Wang

IPC: H01L33/62 ,  H01L33/10 ,  H01L33/30 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L33/10 ,  H01L33/30 ,  H01L33/387

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.

公开(公告)号：USD894850S1

公开(公告)日：2020-09-01

申请号：US29673162

申请日：2018-12-12

Applicant: EPISTAR CORPORATION

Designer： Chun-Fu Tsai ,  Yao-Ning Chan ,  Yi-Tang Lai ,  Yi-Ming Chen ,  Shih-Chang Lee

公开(公告)号：US10553747B2

公开(公告)日：2020-02-04

申请号：US15295226

申请日：2016-10-17

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Ming Chen ,  Chun-Yu Lin ,  Ching-Pei Lin ,  Chung-Hsun Chien ,  Chien-Fu Huang ,  Hao-Min Ku ,  Min-Hsun Hsieh ,  Tzu-Chieh Hsu

IPC: H01L33/62 ,  H01L21/683 ,  H01L33/00

Abstract: A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.

公开(公告)号：US10461223B2

公开(公告)日：2019-10-29

申请号：US16128604

申请日：2018-09-12

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu Chang ,  Hsin-Chan Chung ,  Hung-Ta Cheng ,  Wen-Luh Liao ,  Shih-Chang Lee ,  Chih-Chiang Lu ,  Yi-Ming Chen ,  Yao-Ning Chan ,  Chun-Fu Tsai

IPC: H01L33/38 ,  H01L33/30

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 .

公开(公告)号：US10283669B2

公开(公告)日：2019-05-07

申请号：US15643807

申请日：2017-07-07

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Ching-Huai Ni ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Ching-Pei Lin

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L25/075 ,  H01L33/22 ,  H01L21/00

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

公开(公告)号：US09831384B2

公开(公告)日：2017-11-28

申请号：US14261368

申请日：2014-04-24

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming Chen ,  Hao-Min Ku ,  Chih-Chiang Lu ,  Tzu-Chieh Hsu

IPC: H01L33/10 ,  H01L33/26 ,  H01L33/40 ,  H01L33/38

CPC classification number: H01L33/10 ,  H01L33/38 ,  H01L33/405

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprise a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active formed between the first-type semiconductor layer and the second-type semiconductor layer and emitting a light; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface; wherein the critical angle of the light at the first interface is larger than that at the second interface; and wherein the reflective structure ohmically contacts the first-type semiconductor layer at the first interface.

公开(公告)号：US09735312B2

公开(公告)日：2017-08-15

申请号：US14442319

申请日：2013-07-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Ching-Huai Ni ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Ching-Pei Lin

IPC: H01L33/02 ,  H01L25/075 ,  H01L33/00 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L33/22 ,  H01L21/00

CPC classification number: H01L33/0025 ,  H01L21/00 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor light-emitting device, comprises the steps of providing a first substrate; providing multiple epitaxial units on the first substrate, wherein the plurality of epitaxial units comprises: multiple first epitaxial units, wherein each of the first epitaxial units has a first geometric shape and a first area; and multiple second epitaxial units, wherein each of the second epitaxial units has a second geometric shape and a second area; providing a second substrate with a surface; transferring the multiple second epitaxial units to the surface of the second substrate; and dividing the first substrate to form multiple first semiconductor light-emitting devices, wherein each of the first semiconductor light-emitting devices has the first epitaxial unit; wherein the first geometric shape is different from the second geometric shape, or the first area is different from the second area.

公开(公告)号：US09478698B2

公开(公告)日：2016-10-25

申请号：US14174036

申请日：2014-02-06

Applicant: Epistar Corporation

Inventor： Tsung-Hsien Yang ,  Tzu-Chieh Hsu ,  Yi-Ming Chen ,  Yi-Tang Lai ,  Jhih-Jheng Yang ,  Chih-Wei Wei ,  Ching-Sheng Chen ,  Shih-I Chen ,  Chia-Liang Hsu ,  Ye-Ming Hsu

IPC: H01L33/02 ,  H01L33/00

CPC classification number: H01L33/02 ,  H01L33/0079

Abstract: A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.

Abstract translation: 公开了一种发光器件，包括：透明衬底; 在所述透明基板上的半导体发光层，其中，所述半导体发光层包括靠近所述透明基板的第一半导体层，远离所述透明基板的第二半导体层，以及能够发光的发光层 设置在第一半导体层和第二半导体层之间; 以及在所述透明基板和所述半导体发光叠层之间的接合层，其中所述接合层具有逐渐变化的折射率，并且所述接合层处的临界角和从所述发光层发射的光的所述透明基板 朝向透明基板大于35度。

公开(公告)号：US09281443B2

公开(公告)日：2016-03-08

申请号：US13959891

申请日：2013-08-06

Applicant: Epistar Corporation

Inventor： Tsung-Hsien Yang ,  Han-Min Wu ,  Jhih-Sian Wang ,  Yi-Ming Chen ,  Tzu-Ghieh Hsu

IPC: H01L29/207 ,  H01L21/00 ,  H01L33/08 ,  H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L29/0649 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/22 ,  H01L33/385 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: The application provides a light-emitting diode array, including: a first light-emitting diode including a first area; a second area; a first isolation path between the first area and the second area, and the first isolation path including an electrode isolation layer; and an electrode contact layer covering the first area; a second light-emitting diode including a semiconductor stack layer; and a second electrical bonding pad on the semiconductor stack layer; and a second isolation path between the first light-emitting diode and the second light-emitting diode, wherein the second isolation path includes an electrical connecting structure electrically connected to the first light-emitting diode and the second light-emitting diode.

Abstract translation: 本发明提供了一种发光二极管阵列，包括：包括第一区域的第一发光二极管; 第二个区域 在第一区域和第二区域之间的第一隔离路径，并且第一隔离路径包括电极隔离层; 以及覆盖所述第一区域的电极接触层; 包括半导体堆叠层的第二发光二极管; 和在所述半导体堆叠层上的第二电焊盘; 以及第一发光二极管和第二发光二极管之间的第二隔离路径，其中第二隔离路径包括与第一发光二极管和第二发光二极管电连接的电连接结构。