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公开(公告)号：JP2005074561A
公开(公告)日：2005-03-24
申请号：JP2003307849
申请日：2003-08-29
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： OGIWARA ATSUSHI , OKA NAOMASA , HARADA HIROSHI , NOGE HIROSHI , FUKUSHIMA HIROSHI , HIRATA KATSUHIRO , MITSUTAKE YOSHIO , HASEGAWA YUYA , SUZUMURA MASAHIKO , KONO KIYOHIKO
Abstract: PROBLEM TO BE SOLVED: To provide an electrostatic micro-actuator having a latching function of holding a movable part in a displaced state with a relatively small area, and an optical switch. SOLUTION: This electrostatic micro-actuator has: a movable plate; a flexible supporting arm for supporting the movable plate and displacing it in a fixed direction; a first driving part for driving the movable plate in the fixed direction; a first fitting member connected to the movable plate; a second fitting member for holding the first fitting member in a state of being displaced in the fixed direction; a movable electrode disposed almost parallel with the fixed direction and connected to the second fitting member; and a fixed electrode disposed almost parallel with the movable electrode and driving the movable electrode by electrostatic attracting force generated between the movable electrode and the fixed electrode, to release the state held by the second fitting member. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种静电微致动器，其具有将可移动部分保持在相对较小面积的位移状态的锁定功能，以及光学开关。
解决方案：该静电微致动器具有：可动板; 用于支撑可移动板并沿固定方向移位的柔性支撑臂; 用于沿固定方向驱动可动板的第一驱动部分; 与可移动板连接的第一配件; 第二装配构件，用于将所述第一装配构件保持在沿所述固定方向移位的状态; 可动电极，其设置成与所述固定方向大致平行并与所述第二配件构件连接; 以及与所述可动电极大致平行地配置的固定电极，并且通过在所述可动电极与所述固定电极之间产生的静电吸引力来驱动所述可动电极，以释放由所述第二装配构件保持的状态。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2004242455A
公开(公告)日：2004-08-26
申请号：JP2003030505
申请日：2003-02-07
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： KIRIHARA MASAO , HASEGAWA YUYA , MURAI AKIHIKO , OKA NAOMASA , HIRATA KATSUHIRO , MIYAJIMA HISAKAZU , OGIWARA ATSUSHI , MITSUTAKE YOSHIO , KAWADA HIROSHI , TAKAKURA NOBUYUKI , YAMAMOTO MASAHIRO
Abstract: PROBLEM TO BE SOLVED: To provide an electrostatic drive type actuator which is adapted to an optical switch or particularly to a matrix optical switch and which has a small size/low power. SOLUTION: This electrostatic drive type actuator includes a movable member deformed by an electrostatic attraction force, a fixed member connected to the movable member, and a magnetic force attraction member for holding a shape in the state that the movable member is attracted. The fixed member has a connector connected to the movable member, and a fixed electrode part connected to the connector and having the form that a distance to the movable member gets longer toward the distal end of the movable member in a length direction. The movable member has a movable electrode part deformed by connecting to the connector, and a magnetic part mounted at the distal end of the movable electrode part at the opposite side of the connector and made of a soft magnetic plate. The magnetic force attraction member has a permanent magnet part for holding the magnetic part by a magnetic attraction force in the state that the movable electrode part is attracted to the fixed electrode part by the electromagnetic attraction force, and an electromagnet part for weakening the magnetic field of permanent magnet part. COPYRIGHT: (C)2004,JPO&NCIPI
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公开(公告)号：JP2003344787A
公开(公告)日：2003-12-03
申请号：JP2002154811
申请日：2002-05-28
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： MURAI AKIHIKO , OKA NAOMASA , MIYAJIMA HISAKAZU , OGIWARA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide an optical switch of which the optical axis is easily adjusted and which is easily manufactured. SOLUTION: The optical switch is composed of a plurality of an optical waveguides 4 of which the both end parts are formed as a light incident part 1 and a light emitting part 2 and a light reflecting film 3 is provided inside, a mirror 5 which is provided between adjacent optical waveguides 4 which are arranged in a way that the light emitting part 2 and the light incident part 1 are opposite to each other, and movable between a position at which the light emitted from the light emitting part 2 is reflected and a position at which the light is not reflected, and an end part waveguide 6, with a light reflection film 3 provided therein, which is arranged in a manner that the light emitting part 2 or the light incident part 1 is opposite to the light incident part 1 or the light emitting part 2 of the optical waveguide 4 which is located at the end part among the plurality of optical waveguides 4 via the movable mirror 5. COPYRIGHT: (C)2004,JPO
Abstract translation: 要解决的问题：提供光轴易于调节且易于制造的光开关。 解决方案：光开关由多个光波导4组成，其两端部形成为光入射部分1，发光部分2和光反射膜3设置在其内部，镜子 5设置在相邻的光波导4之间，其布置成使得发光部分2和光入射部分1彼此相对，并且可以在从发光部分2发射的光的位置之间移动 反射光和未被反射的位置，以及设置有光反射膜3的端部部分波导6，发光部2或光入射部1以与发光部2相同的方式配置 光入射部分1或光波导4的发光部分2，它们通过可移动反射镜5位于多个光波导4中的端部之间。（C）2004，JPO
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公开(公告)号：JP2003279869A
公开(公告)日：2003-10-02
申请号：JP2002079893
申请日：2002-03-22
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： OKUTO TAKASHI , OKA NAOMASA , MIYAJIMA HISAKAZU , OGIWARA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide an electrostatic actuator capable of increasing the movement displacement amount of a moving body which is an optical control element.
SOLUTION: The electrostatic actuator is provided with a substrate 1 where a straight traveling path 12 is provided and a plurality of electrodes 11 are disposed so as to displace an electrostatic force generating position along the traveling path 12, and the moving body 2 having a planar optical control part 22 on a base body 21 displaced on the traveling path 12 corresponding to the generating position of electrostatic force. Light is passed through when the moving body 2 is at one position and the light is shielded in the optical control part 22 when it is at the other position.
COPYRIGHT: (C)2004,JPOAbstract translation: 解决的问题：提供能够增加作为光学控制元件的移动体的移动位移量的静电致动器。 ＆lt; P＆gt;解决方案：静电致动器设置有基板1，其中设置有直线行进路径12，并且设置多个电极11，以便沿着行进路径12移动静电力产生位置，并且移动体2 在与静电力的产生位置对应的行进路径12上移动的基体21上具有平面光学控制部22。 当移动体2位于一个位置时，光在光控制部22中处于另一位置时被遮光。 版权所有（C）2004，JPO
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公开(公告)号：JP2002052499A
公开(公告)日：2002-02-19
申请号：JP2000242304
申请日：2000-08-10
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： OGIWARA ATSUSHI , OKA NAOMASA
Abstract: PROBLEM TO BE SOLVED: To provide an actuator actuating in two directions. SOLUTION: Two girder structural bodies, which are formed by having first conductive semiconductor layers 1 and 7, second conductive impurity diffusion layers 2 and 8 formed on the surface of the conductive semiconductor layers 1 and 7 by diffusing impurities, insulating layers 3 and 9 formed on the first conductive semiconductor layers 1 and 7 and the second conductive impurity diffusion layers 2 and 8, metal layers 6 and 12 formed on the second conductive impurity diffusion layers 2 and 8 via the insulating layers 3 and 9 and having thermal expansion coefficient larger than that of the first conductive semiconductor layers, and two metal electrodes 4, 5 and 10, 11 contacting with the second conductive impurity diffusion layers 2 and 8 clamping the metal layers 6 and 12 are so joined that the faces of the first conductive semiconductor layers 1 and 7 without formed with the insulating layers 3 and 9 aye faced to each other via a heat insulation layer 13.
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Patent Agency Ranking
公开(公告)号：JP2001210206A
公开(公告)日：2001-08-03
申请号：JP2000018089
申请日：2000-01-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： OGIWARA ATSUSHI , OKA NAOMASA
Abstract: PROBLEM TO BE SOLVED: To provide a thermo switch that can perform a normal switching operation even with an inclined movable contact, and method of manufacturing the same. SOLUTION: The thermo switch includes a movable piece 1 with a movable end, and a stationary piece 6 with separated stationary contacts 7a, 7b. The movable piece 1 has a flexible region 2, a thin film 5 of a different thermal expansion deposited on the flexible region 2, and a movable contact 4 formed on the movable end. The flexible region 2 is flexed by a temperature variation so as to move the movable contact 4 to switch the stationary contacts 7a, 7b. The stationary contacts 7a, 7b are respectively provided on X-shaped structures 6a, 6b.
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公开(公告)号：JP2000228403A
公开(公告)日：2000-08-15
申请号：JP2849899
申请日：1999-02-05
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： OKUTO TAKASHI , OKA NAOMASA , OGIWARA ATSUSHI
IPC: H01L23/52 , H01L21/285 , H01L21/3205
Abstract: PROBLEM TO BE SOLVED: To reduce silicon nodules to be separated on the surface of an aluminum wiring. SOLUTION: This aluminum wiring forming method comprises a process in which an insulating layer 2 is formed on one primary surface of a semiconductor substrate 1, a process in which an aluminum wiring 3 containing silicon is formed on the insulating layer 2 by sputtering, and a process in which a passivation film 4 is formed on both the insulating layer 2 and the aluminum wiring 3. The thermal histories of processes carried out after sputtering for the formation of the aluminum wiring 3 are set within a temperature range of 380 to 400 deg.C.
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公开(公告)号：JP2000174265A
公开(公告)日：2000-06-23
申请号：JP34247198
申请日：1998-12-02
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： OKUTO TAKASHI , OKA NAOMASA , OGIWARA ATSUSHI
IPC: H01L29/78 , H01L21/336
Abstract: PROBLEM TO BE SOLVED: To provide a vertical power MOSFET whose gate electrode has superior embeddability, and its manufacturing method. SOLUTION: A groove 10 is formed in such a manner that it penetrates the surface of an n+-type source area 4, the n+-type source area 4, a p-type well area 3 to the midway of an n-type silicon epitaxial layer 2. A gate electrode 6 is embedded in the groove 10 with a gate oxide film 5 formed on the inner circumferential surface of the groove 10 interposed. The groove 10 comprises a first groove 10a which is formed on the side of an n+-type silicon substrate 1 in the depthwise direction of the groove 10, and a second groove 10b which is formed in a manner to penetrate the surface of the n+-type source area 4 to the first groove 10a and of which opening area is larger than the first groove 10a. The first and second grooves 10a and 10b are of trench type.
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公开(公告)号：JPH11340171A
公开(公告)日：1999-12-10
申请号：JP14139998
申请日：1998-05-22
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： OGIWARA ATSUSHI , OKA NAOMASA , OKUTO TAKASHI
IPC: H01L21/304
Abstract: PROBLEM TO BE SOLVED: To maintain the smoothness of etching form with no decreased work speed when a semiconductor substrate is etched by sand blast, by, after the semiconductor substrate is etched with jetted, under high pressure, abrasive, jetting the abrasive under low pressure for etching. SOLUTION: A silicon substrate 1 of an opening part 22 of a resist 2 is etched by sand blast to a depth L1 (about 90% of desired depth L2). Here, an abrasive is jetted under high pressure (first process). Then, the etching is continued by sand blast while the jetting pressure of abrasive is lower than the first process (second process). In the first process, working to the depth L1 is done in a short time since the jetting pressure of abrasive is high for faster etching speed. In the second process, with lower jetting pressure, a chipping 12 caused in the first process is eliminated for a smooth etching surface 14. Here, etching completes in a short time as it is about 10% of the desired depth L2.
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公开(公告)号：JPH10335457A
公开(公告)日：1998-12-18
申请号：JP14171297
申请日：1997-05-30
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： OKA NAOMASA , KAMAKURA MASATOMO , OGIWARA ATSUSHI , OKUTO TAKASHI
IPC: H01L21/28 , H01L21/768 , H01L23/522
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which can adjust its resistive value accurately, and a method for manufacturing the semiconductor device. SOLUTION: Formed on a single crystal silicon substrate 1 is a thick silicon oxide film 2, on which is formed a polysilicon layer 3a. The layer 3a has such an impurity distribution that a phosphorus (P) concentration is increased as a depth from the film 2 increases, and has a trapezoidal shape having a shorter lower bottom side. Formed on the layer 3a is a silicon oxide film 4 so as to have a minimum thickness at an upper bottom end of the layer 3a, on which is further formed a polysilicon layer 3b so that an amount of phosphorus (P) is increased as it goes from the film 4 on the layer 3a upto the surface of the film 2. And an interlayer insulating film 5 is formed on a side of the substrate 2 provided with the layers 3a and 3b. The films 4 and 5 formed on the layers 3 and 3b are partially removed to be electrically connected to respective aluminum wiring electrodes 6a and 6b.
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