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    METHODS FOR LIQUID TRANSFER COATING OF THREE-DIMENSIONAL SUBSTRATES
    61.
    发明申请
    METHODS FOR LIQUID TRANSFER COATING OF THREE-DIMENSIONAL SUBSTRATES 审中-公开
    三维基底液体转移涂层的方法

    公开(公告)号：WO2009026240A1

    公开(公告)日：2009-02-26

    申请号：PCT/US2008073499

    申请日：2008-08-18

    Applicant: SOLEXEL INC ,  WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M ,  NAG SOMNATH

    Inventor： WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M ,  NAG SOMNATH

    IPC: B05D1/36 ,  B05D5/00 ,  H01L21/00

    CPC classification number: B01D1/22 ,  H01L21/02617 ,  H01L21/6715 ,  H01L22/12 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/1872 ,  H01L31/1892 ,  H01L31/202 ,  H05K1/0284 ,  H05K3/046 ,  H05K3/1258 ,  H05K3/207 ,  H05K2201/09036 ,  H05K2201/09045 ,  H05K2203/0126 ,  H05K2203/0528 ,  H05K2203/308 ,  Y02E10/50 ,  Y02P70/521

    Abstract: Methods here disclosed provide for selectively coating the top surfaces or ridges of a 3-D substrate while avoiding liquid coating material wicking into micro cavities on 3-D substrates. The substrate includes holes formed in a three-dimensional substrate by forming a sacrificial layer on a template. The template includes a template substrate with posts and trenches between the posts. The steps include subsequently depositing a semiconductor layer and selectively etching the sacrificial layer. Then, the steps include releasing the semiconductor layer from the template and coating the 3-D substrate using a liquid transfer coating step for applying a liquid coating material to a surface of the 3-D substrate. The method may further include coating the 3-D substrate by selectively coating the top ridges or surfaces of the substrate. Additional features may include filling the micro cavities of the substrate with a filling material, removing the filling material to expose only the substrate surfaces to be coated, coating the substrate with a layer of liquid coating material, and removing said filling material from the micro cavities of the substrate.

    Abstract translation: 本文公开的方法提供了选择性涂覆3-D衬底的顶表面或脊，同时避免液体涂层材料芯吸到3-D衬底上的微空腔中。 衬底包括通过在模板上形成牺牲层而形成在三维衬底中的孔。 该模板包括一个模板衬底，在柱子之间有柱子和沟槽。 该步骤包括随后沉积半导体层并选择性地蚀刻牺牲层。 然后，这些步骤包括从模板释放半导体层并且使用液体转移涂覆步骤涂覆3D基板，以将液体涂覆材料涂覆到3D基板的表面。 该方法可以进一步包括通过选择性地涂覆衬底的顶脊或表面来涂覆3D衬底。 另外的特征可以包括用填充材料填充基板的微腔，除去填充材料以仅暴露待涂覆的基板表面，用液体涂层材料涂覆基板，并且从微腔除去所述填充材料 的底物。

    SPATIALLY SELECTIVE LASER ANNEALING APPLICATIONS IN HIGH-EFFICIENCY SOLAR CELLS
    64.
    发明申请
    SPATIALLY SELECTIVE LASER ANNEALING APPLICATIONS IN HIGH-EFFICIENCY SOLAR CELLS 审中-公开
    高效选择性激光退火应用在高效太阳能电池

    公开(公告)号：WO2012162276A2

    公开(公告)日：2012-11-29

    申请号：PCT/US2012038907

    申请日：2012-05-21

    Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  DESHAZER HEATHER ,  SARASWAT VIVEK ,  KAPUR PAWAN

    Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  DESHAZER HEATHER ,  SARASWAT VIVEK ,  KAPUR PAWAN

    IPC: H01L31/042 ,  H01L31/18

    CPC classification number: H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

    Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction emitter and homo-junction emitter solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    Abstract translation: 公开了用于生产各种类型的异质结发射体和均联发射体太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺或其它切割技术（例如离子注入和加热）制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

    LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS
    65.
    发明申请
    LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS 审中-公开
    光伏太阳能电池的激光加工方法

    公开(公告)号：WO2012092537A3

    公开(公告)日：2012-11-22

    申请号：PCT/US2011068037

    申请日：2011-12-30

    Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  SARASWAT VIVEK

    Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  SARASWAT VIVEK

    IPC: H01L31/042 ,  B23K26/36 ,  H01L31/18

    CPC classification number: H01L31/02363 ,  B23K26/0624 ,  B23K26/40 ,  B23K2203/50 ,  H01L21/268 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Various laser processing schemes are disclosed for producing various types of hetero- junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero- junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    Abstract translation: 公开了用于生产各种类型的异质结和同质结太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

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