公开(公告)号：MY173413A

公开(公告)日：2020-01-23

申请号：MYPI2014700259

申请日：2012-08-09

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K -JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described. The Most Illustrative Drawing: Figure 4

公开(公告)号：MY166305A

公开(公告)日：2018-06-25

申请号：MYPI2012700546

申请日：2010-12-09

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL

IPC: H01L31/0224 ,  H01L31/18

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell. Figure 13

公开(公告)号：AU2013272248A1

公开(公告)日：2014-11-13

申请号：AU2013272248

申请日：2013-04-24

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF

IPC: H01L31/04 ,  H01L31/18

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and base regions. A first electrically conductive metallization layer is patterned on the backside base and emitter regions. An electrically insulating layer is formed on the first electrically conductive metallization layer and a second electrically conductive metallization layer is formed on the electrically insulating layer. The second electrically conductive metallization layer is connected to the first electrically conductive metallization layer through conductive via plugs formed in the electrically insulating layer.

公开(公告)号：AU2013225860B2

公开(公告)日：2017-01-19

申请号：AU2013225860

申请日：2013-02-28

Applicant: SOLEXEL INC

Inventor： KAPUR PAWAN ,  MOSLEHI MEHRDAD M

IPC: H01L31/042 ,  H01L31/0735 ,  H01L31/18

Abstract: Methods and structures are provided for the growth and separation of a relatively thin layer crystalline compound semiconductor material containing III-V device layers, including but not limited to Gallium Arsenide (GaAs), on top of a crystalline silicon template wafer. Solar cell structures and manufacturing methods based on the crystalline compound semiconductor material are described.

公开(公告)号：AU2013267481A1

公开(公告)日：2015-01-22

申请号：AU2013267481

申请日：2013-05-29

Applicant: COUTANT SOLENE ,  SEUTTER SEAN ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  SOLEXEL INC ,  KAPUR PAWAN ,  RATTLE BENJAMINE ,  DESHAZER HEATHER ,  DESHPANDE ANAND ,  MOSLEHI MEHRDAD ,  RANA VIRENDRA

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/04 ,  H01L31/18

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

公开(公告)号：AU2013237911A1

公开(公告)日：2014-11-13

申请号：AU2013237911

申请日：2013-03-28

Applicant: SOLEXEL INC

Inventor： SEUTTER SEAN M ,  MOSLEHI MEHRDAD M ,  DESPHANDE ANAND ,  RANA VIRENDRA V ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  CALCATERRA ANTHONY ,  DUTTON DAVID ,  YONEHARA TAKAO

IPC: H01L31/042 ,  H01L31/18

Abstract: Methods and structures for photovoltaic back contact solar cells having multi-level metallization with at least one aluminum- silicon alloy metallization layer are provided.

公开(公告)号：AU2012358174A1

公开(公告)日：2014-08-14

申请号：AU2012358174

申请日：2012-12-23

Applicant: SOLEXEL INC

Inventor： KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  CALCATERRA ANTHONY ,  DUTTON DAVID ,  KAPUR PAWAN ,  SEUTTER SEAN ,  FATEMI HOMI

IPC: H01L21/205 ,  H01L31/04

Abstract: Processing equipment for the metallization of a plurality of workpieces are provided. The equipment comprising a controlled atmospheric region isolated from external oxidizing ambient with at least one deposition zone for the application of a metal layer on a workpiece. A transport system moves the workpiece positioned in a batch carrier plate through the controlled atmospheric region.

公开(公告)号：AU2016200610B2

公开(公告)日：2017-12-07

申请号：AU2016200610

申请日：2016-02-01

Applicant: SOLEXEL INC

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/04 ,  H01L31/18

Abstract: Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter 5 and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non 10 nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

公开(公告)号：AU2012294932B2

公开(公告)日：2016-08-11

申请号：AU2012294932

申请日：2012-08-09

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/18

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

公开(公告)号：AU2014208227A1

公开(公告)日：2014-08-21

申请号：AU2014208227

申请日：2014-07-30

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  RANA VIRENDA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCAP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/0224 ,  H01L31/18

Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming thin film back contact solar cells are provided.