BAND PASS FILTER
    62.
    发明专利

    公开(公告)号:JPS58120301A

    公开(公告)日:1983-07-18

    申请号:JP298682

    申请日:1982-01-12

    Applicant: SONY CORP

    Abstract: PURPOSE:To have an extremely sharp increment of a loss of insertion at bands excepting the pass band, by setting the distance between the coupling points of a transmission line connected to the 1st and the 2nd resonators at an odd-fold value as long as 1/4 wavelength of the center frequency of the pass band. CONSTITUTION:An earth conductor 2 is provided on the rear side of a dielectric substrate 1, and an input signal is supplied to a microstrip line muSTL11 of the 1st transmission line provided on the upper side of the substrate 1. The line muSTL11 is connected to the 1st dielectric resonator 12, and the resonator 12 is connected to a line muSTL15 of the 2nd transmission line. The line muSTIL15 is connected to the 2nd dielectric resonator 13. For the line muSTL15, the distance between the coupling points between the resonators 12 and 13 is set equal to an odd-fold value as long as 1/4 wavelength of the center frequency of the pass band. The resonator 13 is connected to a line muSTL17 of the 3rd transmission line via the muSTL15, muSTL16 having the same structure as the resonator 13 and a resonator 14. Then an output is extracted out of the muSTL17. As a result, a sharp increment is obtained for a loss of insertion at bands excepting the pass band.

    INSULATED GATE TRANSISTOR ELEMENT AND DRIVE METHOD THEREOF

    公开(公告)号:JPH10284729A

    公开(公告)日:1998-10-23

    申请号:JP854098

    申请日:1998-01-20

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To provide an insulated gate transistor element, which can perform operation with a low power supply voltage, without the requirement for the individual circuit design in correspondence with a logic structure, and can perform the high-speed operation without the defective operation even by the temperature change of a gate threshold voltage, dispersion between lots and the dispersion in the surfaces in a wafer. SOLUTION: This element is constituted of a channel-forming region 22, source/drain regions 23 and 24, a gate region 21, a bias-imparting means 30 and a capacitive element 40. At this time, the potential for controlling the gate threshold voltage of an insulated gate transistor element at the non- operating time is applied on the channel forming region 22 through the bias- imparting means 30. Furthermore, the signal having substantially identical phase as the signal, which is supplied to the gate region 21, is supplied via the capacitive element 40.

    OPTICAL DOPPLER SPEEDOMETER
    69.
    发明专利

    公开(公告)号:JPH07151773A

    公开(公告)日:1995-06-16

    申请号:JP30042693

    申请日:1993-11-30

    Applicant: SONY CORP

    Abstract: PURPOSE:To reduce the distortion of demodulated signals and, at the same time, to relieve the amplitude condition and phase condition of the demodulated signals. CONSTITUTION:In an optical Doppler speedometer which measures the speed of an object 1 based on photodetecting signals having frequency-modulated components corresponding to sine-wave modulating signals by obtaining a measuring light beam LA from reflected light of the object 1 by projecting a light beam emitted from a light source 2 upon the object 1, reference light beam LB by making the light beam from the light source 2 incident to an optical modulator 7 which makes modulating operations by using the sine-wave modulating signals, and the photodetecting signals by detecting synthesized light containing the light beams LB and LA with a photodetecting means 12, the sine-wave modulating signals are supplied to the modulator 7 through a phase adjusting circuit 20.

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