公开(公告)号：JPH03116748A

公开(公告)日：1991-05-17

申请号：JP25340989

申请日：1989-09-28

Applicant: SONY CORP

Inventor： MORITA YASUSHI

IPC: G01R31/26 ,  H01L21/66

Abstract: PURPOSE:To improve the stability and reproducibility of processing by generating active species with high-energy beams, detecting the intensity of beams emitted from the active species, and controlling the amount of the emitted high-energy beams. CONSTITUTION:When material 2 under processing is processed by applying high-energy beams 1 thereto, active species are generated by the high-energy beams 1, the intensity of beams 4 emitted from the active species is detected, and the amount of the emitted high-energy beams 1 is controlled based on the result of the detection. A spectroscope 41 to disperse the beams 4 from the active species, a photoelectric transferrer 42 to convert the dispersed beams into electric signal, and an amplifier 43 to amplify the electric signals compose a detector to detect the beams emitted from the active species. A laser output controller 44 receives the data on the intensity of the beams 4 emitted from the active species and controls the output of the high-energy laser beams 1.

公开(公告)号：JPH02145783A

公开(公告)日：1990-06-05

申请号：JP30026688

申请日：1988-11-28

Applicant: SONY CORP

Inventor： SATO JUNICHI ,  MORITA YASUSHI

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/3213

Abstract: PURPOSE:To inhibit undercutting even at the time of overetching and to efficiently perform etching with high anisotropy by etching a high m.p. metal with an etching gas contg. a fluorine-based gas and silane or halosilane. CONSTITUTION:A layer 2 of tungsten as a high m.p. metal is formed on a substrate 1 by sputtering, coated with a photoresist 3 and etched with an etching gas contg. a fluorine-based gas and silane or halosilane. NF3, CF4 or SF6 is used as the fluorine-based gas. SiH4 or Si2H6 may be used as the silane and SiCl4 or SiHCl3 as the halosilane. Anisotropic etching can be efficiently performed, undercutting at the time of overetching is controlled and this etching method is useful to produce a semiconductor device, etc.

公开(公告)号：JPH0252437A

公开(公告)日：1990-02-22

申请号：JP20273588

申请日：1988-08-16

Applicant: SONY CORP

Inventor： MORITA YASUSHI ,  KOMATSU YUJI

IPC: H01L29/78 ,  H01L21/266 ,  H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49

Abstract: PURPOSE:To prevent an impurity from being passed by a method wherein at least one part of a layer containing a high-melting-point metal having a crystalline property is made amorphous and ions of the impurity are implanted into a substrate by using this part as a mask. CONSTITUTION:A tungsten silicide layer 1 whose surface has been made amorphous by implantation of silicon ions, a polysilicon layer 4 and a silicon oxide film 3 are patterned to form a shape of a gate electrode. Then, ions used to form low-concentration impurity regions 6 are implanted into a silicon substrate 2 in self-alignment with these individual layers 1, 4, 3. During this process, an impurity does not reach the silicon oxide film 3 and the silicon substrate 2 after it has passed through the tungsten silicide layer 1. In succession, a CVD silicon oxide film is applied; it is etched back; side wall parts 5 are formed on side parts of the individual layers 1, 4, 3. Ions used to form high- concentration regions 7 are implanted. Also during this process, the impurity does not reach the silicon oxide film 3 and the silicon substrate 3 in the same manner after it has passed through the tungsten silicide layer 1.

公开(公告)号：JPH01215026A

公开(公告)日：1989-08-29

申请号：JP3972988

申请日：1988-02-24

Applicant: SONY CORP

Inventor： MORITA YASUSHI

IPC: H01L21/318

Abstract: PURPOSE:To grow an silicon nitride film having excellent film thickness efficiently by irradiating a mixed gas, in which a flow rat of Si2H6 gas to NH3 gas is specified, with laser beams and forming the silicon nitride film. CONSTITUTION:An silicon substrate is set to a required vapor growth device, an ArF excimer laser is used as an excitation light source, the mixed gas of Si2H6 gas and NH3 gas is made to flow through the vapor growth device, and an silicon nitride film is shaped. The composition ratio of the silicon nitride film is brought to a stoichiometric composition ratio (stoichiometry) within the range of the flow ratio from 0.02 to 0.11 of the mixed gas of Si2H6 (disilane) gas and NH3 gas, and the growth rate of the silicon nitride film is not also decreased extremely.

公开(公告)号：JPH01215015A

公开(公告)日：1989-08-29

申请号：JP3972888

申请日：1988-02-24

Applicant: SONY CORP

Inventor： MORITA YASUSHI ,  NODA JITSUYA

IPC: H01L21/205 ,  H01L21/84

Abstract: PURPOSE:To form a device with high area-efficiency in a short time, by carrying out ion implantation selectively into an insulation substrate surface to form a decomposition region and by generating an epitaxial growth seeds on the decomposition region, and by causing epitaxial growth of a single crystal layer by this growth seeds. CONSTITUTION:An approximately flat silicon oxide film 2 is formed on a silicon substrate 1 as an insulation substrate. Then a resist layer 3 is entirely formed thereon and the resist layer 3 is selectively exposed to form a window part 4. While using the window part 4 as a mask, ion implantation is carried out to change only the surface of the silicon oxide film 2 into a decomposition region 5. After the resist layer 3 is removed by using the silicon substrate 1 having the decomposition region 5 on the silicon oxide film 2 in this way, epitaxial growth seeds are developed on the decomposition region 5 to cause a single crystal layer 6 to grow on the silicon oxide film 2. Consequently, a single crystal layer grows only on the surface of an insulation substrate and, therefore, the area efficiency can be improved.

公开(公告)号：JPH01214016A

公开(公告)日：1989-08-28

申请号：JP3926788

申请日：1988-02-22

Applicant: SONY CORP

Inventor： NODA JITSUYA ,  MORITA YASUSHI

IPC: H01L21/205 ,  H01L21/84

Abstract: PURPOSE:To obtain a SOI substrate which can prevent an isolation capacity from being increased and can reduce a stress to be caused in an epitaxial layer by a method wherein an insulating layer in a semiconductor substrate where a semiconductor layer has been formed on a substratum via the insulating layer is constituted by a laminated film of an insulating film coming into contact with the semiconductor layer and of a film offsetting the stress in the insulating film. CONSTITUTION:An insulating layer 8 in a semiconductor substrate 11 where a semiconductor layer 10 has been formed on a substratum 1 via the insulating layer 8 is constituted by a laminated film of an insulating film 12 coming into contact with the semiconductor layer 10 and of a film 7 offsetting a stress in the insulating film 12. For example, a polycrystalline silicon layer 5 having a thickness of about 3000Angstrom and to be used as a stress buffer layer, an Si3N4 film 7 having a thickness of 100-500Angstrom and an SiO2 film 12 having a thickness of 1000Angstrom or more are applied and formed one after another on a silicon substrate 1. Then, the SiO2 film 12, the Si3N4 film 7 and the polycrystalline silicon layer 5 are patterned via a mask. Then, SiO2 is applied; after that, it is etched back; SiO2 sidewall parts 9 are formed. Then, silicon is epitaxially grown selectively from the face facing the silicon substrate 1; a silicon semiconductor layer 10 is formed on the SiO2 film 12; a SOI substrate 11 is obtained.

公开(公告)号：JPH01112723A

公开(公告)日：1989-05-01

申请号：JP27056287

申请日：1987-10-27

Applicant: SONY CORP

Inventor： MORITA YASUSHI ,  NODA JITSUYA

IPC: H01L21/20 ,  H01L21/324

Abstract: PURPOSE:To enable a single crystal silicon film with a flat surface to be easily formed on an insulation film by forming a silicon film into a single crystal and by forming silicon film at a temperature exceeding a specific one by the vapor growth method using disilane as a reaction gas. CONSTITUTION:After forming a SiO2 film 2 on the surface of a Si substrate 1 by thermal oxidation, this SiO2 film 2 is patterned to a specific configuration by etching and the surface of the Si substrate 1 is exposed partially. Then, a Si film 3 with nearly flat surface is formed easily at a temperature of 900 deg.C or above and for example a low pressure of 100Torr by the vapor growth method using Si2H6 and H2 as reaction gas.

公开(公告)号：JPS63280412A

公开(公告)日：1988-11-17

申请号：JP11342387

申请日：1987-05-12

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  OSHIMA TAKEFUMI ,  MORITA YASUSHI

IPC: H01L21/20 ,  H01L21/263

Abstract: PURPOSE:To remarkably enhance a lateral crystal growth speed as compared with a longitudinal crystal growth speed by using a substrate having a crystal face existed between planes (100) and (110) and a surface in a plane (110) as a single crystal semiconductor substrate. CONSTITUTION:The surface in plane (100) of a single crystal silicon substrate 1 is exposed in an opening 3 on an insulating layer 2. When dichlorosilane is, for example, used for crystal growth of silicon on such a substrate under reduced pressure at low temperature, the crystal growth is advanced with the substrate 1 as a seed directly above the opening 3, a lateral crystal growth occurs on the layer 3, and the surface in plane (110) at an angle 45 deg. with respect to the surface (100) is exposed. The crystal face existed between the angles of the planes (100) and (110) and the substrate having the surface in plane (110) are used as a single crystal semiconductor substrate. Since these surfaces are crossed at an angle smaller than the plane (100) heretofore used generally with respect to the surface (110) presented at the time of the crystal growth, the lateral crystal growing speed becomes larger than the longitudinal crystal growth speed.

公开(公告)号：JPS63207122A

公开(公告)日：1988-08-26

申请号：JP4114187

申请日：1987-02-24

Applicant: SONY CORP

Inventor： MORITA YASUSHI ,  NODA SANEYA

IPC: H01L21/205 ,  H01L21/84

Abstract: PURPOSE:To obtain a single crystal semiconductor layer having excellent crystallinity even in the abutting section of the single crystal semiconductor layers coming in different directions on an insulator by forming the abutting section of the edge faces of the layers, each inclined at a predetermined angle. CONSTITUTION:Selective vapor growth conditions are so selected that edge faces 4a of single crystal semiconductor layer 4, grown on an insulator 2 from a single crystal semiconductor region 3 are extended forward at a boundary side from the insulator 2 to be formed as inclined faces having preferably an angle theta of 60 deg. or less in the growth step. After the layers grown and coming from different directions coincide at the ends on the insulator 2, they are integrated in thicknesswise direction to form one semiconductor layer 4. Thus, defects can be effectively suppressed in the layer 4 extended and grown on the insulator 2.

公开(公告)号：JPS63177512A

公开(公告)日：1988-07-21

申请号：JP923887

申请日：1987-01-19

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  MORITA YASUSHI

IPC: H01L21/205

Abstract: PURPOSE:To permits opening parts to have an optimum form such as a desirable regular square or a well-shaped rectangle by forming the opening parts so that the first and second films may be used as masks after forming the first film having a band-like opening on an insulating layer and the second film having a band-like opening that intersects the opening of the first film at right angles. CONSTITUTION:A polycrystalline silicon layer 13 having a band-like opening 12 where its longitudinal and cross directions have a crystal orientation of a single-crystal silicon substrate 1 is formed on a silicon dioxide layer 2. After that, this layer forms a resist 15 having a band-like opening 14 that has the same width and interval as those of the opening 12. A plane 2A of the SiO2 layer 2 that is exposed through the openings 12 and 14 is a complete regular square and respective sides correspond with the crystal orientation . And then the layer is treated by a reactive ion-etching, for example, with these polycrystalline silicon layer 13 and the resist 15 as the masks. In the SiO2 layer 2 respective sides are coincident with the crystal orientation , and an opening 10 free from deformation at corner parts is formed.