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公开(公告)号：US09331244B2
公开(公告)日：2016-05-03
申请号：US14189012
申请日：2014-02-25
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S Shatalov , Alexander Dobrinsky , Alexander Lunev , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/10 , H01L33/32 , H01L33/46 , H01S5/0224
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.
Abstract translation: 提供包括多个不均匀区域的半导体层。 每个不均匀区域具有与形成半导体层的材料不同的一个或多个属性。 不均匀区域可以包括基于具有目标波长的辐射配置的一个或多个区域。 这些区域可以包括透明和/或反射区域。 不均匀区域还可以包括具有比基于辐射的区域的电导率更高的导电率的一个或多个区域，例如至少高10％。
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公开(公告)号：US20160118536A1
公开(公告)日：2016-04-28
申请号：US14984156
申请日：2015-12-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Alexander Dobrinsky , Alexander Lunev , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/10 , H01L33/007 , H01L33/12 , H01L33/32 , H01L33/46
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.
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公开(公告)号：US09287449B2
公开(公告)日：2016-03-15
申请号：US14150949
申请日：2014-01-09
Applicant: Sensor Electronic Technology, Inc.
Inventor： Remigijus Gaska , Maxim S. Shatalov , Alexander Lunev , Alexander Dobrinsky , Jinwei Yang , Michael Shur
CPC classification number: H01L33/22 , H01L24/05 , H01L24/14 , H01L33/32 , H01L33/38 , H01L2224/0401 , H01L2224/06102 , H01L2224/1134 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2924/00
Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.
Abstract translation: 公开了一种包括第一半导体层和与第一半导体层的接触的器件。 第一半导体层和触点之间的界面包括具有特征高度和特征宽度的第一粗糙度轮廓。 特征高度可以对应于第一粗糙度轮廓中波峰和相邻谷之间的平均垂直距离。 特征宽度可以对应于第一粗糙度轮廓中的波峰和相邻谷之间的平均横向距离。
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公开(公告)号：US09281441B2
公开(公告)日：2016-03-08
申请号：US14285738
申请日：2014-05-23
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Rakesh Jain , Maxim S. Shatalov , Alexander Dobrinsky , Jinwei Yang , Remigijus Gaska
CPC classification number: H01L33/06 , H01L33/18 , H01L33/30 , H01L2224/14 , H01S5/3209 , H01S5/3413 , H01S5/34333
Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
Abstract translation: 提供了包括包含多个组成不均匀区域的半导体层的器件。 多个组成不均匀区域的平均带隙与半导体层的剩余部分的平均带隙之间的差可以是至少热能。 此外，多个组成不均匀区域的特征尺寸可以小于半导体层的位错密度的倒数。
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公开(公告)号：US08993996B2
公开(公告)日：2015-03-31
申请号：US13803718
申请日：2013-03-14
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Remigijus Gaska , Jinwei Yang , Alexander Dobrinsky
CPC classification number: H01L33/06 , H01L33/0045 , H01L33/32
Abstract: A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.
Abstract translation: 提供包括多个周期的超晶格层，每个周期由多个子层形成。 每个子层包括与相邻子层不同的组成，并且包括与相邻子层的极化相反的极化。 以这种方式，各相邻子层的极化相互补偿。 此外，超晶格层可被配置为对诸如紫外线辐射的辐射至少部分透明。
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Patent Agency Ranking
66.发明申请Device with Transparent and Higher Conductive Regions in Lateral Cross Section of Semiconductor Layer 审中-公开具有透明和更高导电区域的器件在半导体层的横截面公开(公告)号：US20150048309A1
公开(公告)日：2015-02-19
申请号：US14531162
申请日：2014-11-03
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Maxim S. Shatalov , Alexander Dobrinsky , Remigijus Gaska , Jinwei Yang
CPC classification number: H01L33/0025 , B82Y10/00 , H01L21/0237 , H01L21/02458 , H01L21/02507 , H01L21/02518 , H01L21/0254 , H01L29/15 , H01L29/2003 , H01L29/778 , H01L33/06 , H01L33/32 , H01S5/0421 , H01S5/3216 , H01S5/342 , H01S5/34333
Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
Abstract translation: 提供了一种包括一个或多个具有横向区域的层，该层被配置为有助于辐射通过该层的传输和被配置为促进流过该层的电流的横向区域。 该层可以包括短期超晶格，其包括与井交替的障碍物。 在这种情况下，障碍物可以包括被配置为减少在层中吸收的辐射量的透明区域以及被配置为将跨越层的电压降保持在期望范围内的较高导电区域。
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公开(公告)号：US20140326950A1
公开(公告)日：2014-11-06
申请号：US14266900
申请日：2014-05-01
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Jinwei Yang , Wenhong Sun , Rakesh Jain , Michael Shur , Remigijus Gaska
IPC: H01L29/06
CPC classification number: H01L29/158 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L33/007 , H01L33/12
Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.
Abstract translation: 提供了诸如III族氮化物基半导体结构的半导体结构。 半导体结构包括含有半导体层的空腔。 含腔的半导体层可以具有大于两个单层和多个空腔的厚度。 空腔可以具有至少一纳米的特征尺寸和至少五纳米的特征分离。
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公开(公告)号：US08879598B2
公开(公告)日：2014-11-04
申请号：US14184649
申请日：2014-02-19
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Maxim S. Shatalov , Alexander Dobrinsky , Remigijus Gaska , Jinwei Yang
CPC classification number: H01L33/0025 , B82Y10/00 , H01L21/0237 , H01L21/02458 , H01L21/02507 , H01L21/02518 , H01L21/0254 , H01L29/15 , H01L29/2003 , H01L29/778 , H01L33/06 , H01L33/32 , H01S5/0421 , H01S5/3216 , H01S5/342 , H01S5/34333
Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
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公开(公告)号：US20130075691A1
公开(公告)日：2013-03-28
申请号：US13623381
申请日：2012-09-20
Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.
Inventor： Michael Shur , Remigijus Gaska , Jinwei Yang
IPC: H01L33/06
CPC classification number: H01L33/06 , H01L33/025 , H01L33/04 , H01L33/14 , H01L33/325
Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a percolated carbon atomic plane.
Abstract translation: 提供了碳掺杂短周期超晶格。 异质结构包括短周期超晶格，其包括与多个势垒交替的多个量子阱。 量子阱和/或势垒中的一个或多个包括一个过孔碳原子面。
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公开(公告)号：US10460952B2
公开(公告)日：2019-10-29
申请号：US16022939
申请日：2018-06-29
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Jinwei Yang , Wenhong Sun , Rakesh Jain , Michael Shur , Remigijus Gaska
IPC: H01L21/308 , H01L29/20 , H01L21/02 , H01L29/66 , H01L29/15 , H01L33/00 , H01L33/12 , H01L33/22 , H01L33/32
Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.
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