公开(公告)号：JPH03127840A

公开(公告)日：1991-05-30

申请号：JP26770289

申请日：1989-10-13

Applicant: SONY CORP

Inventor： HIRAMATSU SHIGERU ,  TAKAKUWA HIDEMI ,  KAMATA MIKIO ,  SHIBATA HIROMASA

IPC: H01L29/812 ,  H01L21/285 ,  H01L21/338

Abstract: PURPOSE:To decrease the gate length of a gate electrode, reduce the gate resistance, and realize low noise and high frequency operation, by sticking electrode material of source and drain from above a gate electrode by using it as a mask, and forming electrodes in a selfalignment manner wherein one side wall is used as the source electrode and the opposite side is used as the drain electrode. CONSTITUTION:A material layer 3 and a first metal layer 4 having desired width W are stuck and formed on a semiconductor substrate 12. A second metal layer 8 is stuck so as to bridge one side wall 3a of the material layer 3, one side wall 4a of the first metal layer 4, and the upper layer 4b of the first metal layer 4. A gate electrode 48 which has width WG nallower than the width W and bond to the semiconductor substrate 12 is formed by controlling the thickness of a gate forming part 8a of the metal layer 8. Electrode materials 10 and 11 of source and drain are stuck from above the gate electrode 48 by using them as a mask, and electrodes are formed in the selfalignment manner wherein one side wall is used as the source electrode, and the opposite side is used as the drain electrode. Thereby the gate length of the gate electrode 48 is decreased, the gate resistance is reduced, high frequency characteristics are improved, and low noise performance is realized.

公开(公告)号：JPS61198677A

公开(公告)日：1986-09-03

申请号：JP25051485

申请日：1985-11-08

Applicant: SONY CORP

Inventor： KAMATA MIKIO ,  HIRATA YOSHIMI

IPC: H01L21/339 ,  H01L27/148 ,  H01L29/76 ,  H01L29/762 ,  H01L29/768 ,  H01L29/772 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/3725

Abstract: PURPOSE:To enable uniform fat zero to be introduced into a two-phase CCD charge transfer device by implanting a charge QA' into the bits of each register by the so-called CCD transfer, and then pushing up the potential to cause excess charges to be emitted into the substrate, thereby making the remaining bias charges to fat zero. CONSTITUTION:A plurality of transfer electrodes 3 are arranged and formed along charge transfer direction (a) on one surface of a P-type silicon substrate 1 through a gate insulation film 2 composed of SiO2 or the like, whereby a CCD transfer portion also acting as a photo detector portion is constructed. The respective transfer electrodes 3 are alternately connected in common and applied with clock voltages phi1 and phi2, respectively. In order to introduce fat zero, within the vertical blanking period, a first gate voltage G1 and a second gate voltage G2 are simultaneously applied to a first input gate electrode 7 and a second input gate electrode 8, respectively, and a charge of a quantity somewhat greater than the quantity of the bias charge of fat zero is sequentially introduced from the diffusion layer of the input portion applied with an input voltage VIN to below the next electrode to receive light.

公开(公告)号：JPS60263477A

公开(公告)日：1985-12-26

申请号：JP12024984

申请日：1984-06-12

Applicant: SONY CORP

Inventor： KAMATA MIKIO

IPC: H01L29/812 ,  H01L21/265 ,  H01L21/338 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/205 ,  H01L29/778

Abstract: PURPOSE:To eliminate disconnection or other defects due to steps in an uneven surface, and thereby to improve reliability, by a method wherein a first, second, and third semiconductor layers contribute to the construction of a double heterojunction structure, ions are implanted selectively into the third semiconductor layer, and a gate region is formed in a portion outside the area modified to be equipped with high resistance. CONSTITUTION:On the primary surface of an undoped semi-insulating, single crystal substrate S0, a first semiconductor layer 11, second semicondujctor layer 12, and third semiconductor layer 13 are epitaxially grown, in that order. A first heterojunction JH1 is formed between the second and third semiconductor layers 12 and 13, and a second heterojunction JH2 is formed between the second and third semiconductor layers 12 and 13. Onto a region (a), located in the third semiconductor layer 13 and to be occupied by a DH-MIS-FET, a photoresist mask 21 for ion implantation is applied, source/drain regions 4, 5 are formed to be subjected to exposure and development, and then implantation is accomplished of, for example, boron ions B for the formation of a high resistance layer 22. The masking layer 23 is removed, annealing is performed, and then activation is accomplished of the source/drain regions 4, 5.

公开(公告)号：JPS60263474A

公开(公告)日：1985-12-26

申请号：JP12024684

申请日：1984-06-12

Applicant: SONY CORP

Inventor： KAMATA MIKIO ,  WATABE SHIYOUZOU

IPC: H01L29/812 ,  H01L21/338 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/205 ,  H01L29/778

Abstract: PURPOSE:To effectively neutralize the effect of the re-distribution of a channel region into an interface attributable to doping and to constitute FETs excellent in uniformity and reproducibility by a method wherein a double heterojunction structure is adopted the two junctions are provided with like barriers. CONSTITUTION:A first heterojunction JH1 is formed between a third and second semiconductor layers 3 and 2, and a second heterojunction JH2 is formed between the second and first semiconductor layer 2 and 1. Because the first and third semiconductor layers 1 and 3 sandwiching the second semiconductor layer 2 are made of a chemical semiconductor GaAs, the first and second heterojunctions are provided with barriers approximately of the same height. The second semiconductor layer 2 is depleted when this DH-MIS-FET 7 is in operation, when a channel 6 of a 2DEG layer is formed on a side of the second heterojunction JH2 facing the first semiconductor layer 1 or the GaAs. By using this design, a high-speed FET may be realized, owing to the channel 6 formed of 2DEG in the undoped first semiconductor layer 1.

公开(公告)号：JPS5775455A

公开(公告)日：1982-05-12

申请号：JP15195580

申请日：1980-10-29

Applicant: Sony Corp

Inventor： HIRATA YOSHIMI ,  KAMATA MIKIO ,  SHIMADA TAKASHI

IPC: H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/355 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3725

CPC classification number: H01L27/14887

Abstract: PURPOSE:To obtain a picture element with high density by forming junction type overflow drain regions on separating regions which are used for separating transfer regions. CONSTITUTION:A plurality of N type transfer regions 22 which are partitioned by P type separating regions 21 are formed in a P type Si substrate 20. A shallow N type separating region 23 is formed in each region 22. A highly concentrated P type overflow drain region 24 is formed corresponding to each region 23. In this constitution, a specific bias voltage is applied to the region 24 during the period of light receiving. When the overflow begins due to the excessive reception of the light during the light receiving period, the electric charges flow from one region 22 to the adjacent region 22. When the adjacent region 22 is overflowed, the excessive charges are absorbed by the region 24 as minority carriers, and a stable state is obtained. During the charge transfer period, the P-N junction is reversedly biased by raising the potential at the region 24 to the zero side, the potential at the region 23 is raised, and the right and left regions 22 are separated. Under this state, the signal charges can be excellently transferred.

Abstract translation: 目的：通过在用于分离转印区域的分离区域上形成结型溢流漏区，以获得高密度的像素。 构成：在P型Si衬底20中形成由P型分离区21划分的多个N型转移区22.在每个区22中形成浅N型分离区23.高浓度P + 类型溢出漏极区域24形成为对应于每个区域23.在该结构中，在光接收期间，特定的偏置电压被施加到区域24。 当在光接收期间由于光的过度接收而溢出开始时，电荷从一个区域22流向相邻区域22.当相邻区域22溢出时，过多的电荷被区域24吸收，如 少数载体和稳定状态。 在电荷转移期间，通过将区域24上的电位升高到零一侧，将P-N结反向偏置，区域23处的电位升高，左右区域22分离。 在这种状态下，信号电荷可以很好的传输。

公开(公告)号：JPS5768066A

公开(公告)日：1982-04-26

申请号：JP14472480

申请日：1980-10-16

Applicant: Sony Corp

Inventor： KAMATA MIKIO ,  HIRATA YOSHIMI ,  SHIMADA TAKASHI

IPC: H01L27/148 ,  H01L31/10

CPC classification number: H01L27/14887

Abstract: PURPOSE:To eliminate a defect in a picture in a solid state image pickup element by enhancing the potential barrier of a channel stopper at the charge transfer time higher than that at the charge storage time, thereby completely transferring the full signal charge stored in the picture elements. CONSTITUTION:N type layer 21 and N type layers 9 are formed at the prescribed interval on a P type Si substrate 6, and a polysilicon layer 13 is formed via a gate insulating film 10. Ions are injected via the mask 13 to form a channel 7 and an N type channel stopper 8. An SiO214 is formed on the layer 13, a transfer electrode 11 is formed, and an objective solid state image pickup element is obtained. With this construction, it has electrodes 13 independently controllable, the balance of the maximum charge storage amount of each channel 7 can be maintained, and when the barrier potential is maintained at lower during the storage period and at higher during the transfer period, defect in the picture can be, even if there is an irregularity in each barrier potential at the storage time, avoided.

Abstract translation: 目的：通过在比电荷存储时间更高的电荷转移时间增强通道阻挡层的势垒来消除固态摄像元件中的图像中的缺陷，从而完全转印存储在图像中的全部信号电荷 元素。 构成：在P型Si衬底6上以规定的间隔形成N +型层21和N +型层9，并且经由栅极绝缘膜10形成多晶硅层13。 掩模13形成通道7和N型通道阻挡器8.在层13上形成SiO 214，形成转移电极11，并获得目标固态图像拾取元件。 利用这种结构，电极13可独立控制，可以维持每个通道7的最大电荷存储量的平衡，并且当屏蔽电位在储存期间维持在较低位置时，并且在转移期间更高， 即使在存储时间内每个障碍势能有不规则的情况，图片也可以避免。

公开(公告)号：JPS5470764A

公开(公告)日：1979-06-06

申请号：JP13747477

申请日：1977-11-16

Applicant: SONY CORP

Inventor： OKA YOSHIO ,  OZAWA HIDEKATSU ,  KUSAYANAGI MASAO ,  KAMATA MIKIO

IPC: H01L21/20 ,  H01L21/208

Abstract: PURPOSE:To form a crystal region featuring the desired face azimuth differnt from the substrate on the semiconductor substrate selectively. CONSTITUTION:Al evaporation layer 11a and 11b of about 30mum are formed selectively on Si substrate 10 of about 300mum thick featuring the {111} face, and then Si bar 13 featuring the {100} and {110} faces is put on the layers physically. The whole test sample is kept at average temperatures 1000-1050 deg.C, and about 1-hour process is given in the vacuum atmosphere with an inclination of about 100 deg.C/cm so that the bar plate side may feature a higher temperature than the Si substrate side. Thus, Al layer 11 is shifted by the heat. Then Si bar 12 and 13 plus layer 11a and 11b shifted to the back of the substrate by the heat are deleted, and thus region A, B and C are turned to the single crystals featuring the face azimuth of {111}, {100} and {110} respectively. This can be applied also to the poly-crystal substrate. In this method, the face azimuth suited to the function of each element can be formed within a sheet of the wafer, thus forming an excellent LSI.

公开(公告)号：JP2006050370A

公开(公告)日：2006-02-16

申请号：JP2004230259

申请日：2004-08-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SAKAI YUSUKE ,  KAMATA MIKIO ,  SAITO NAOKI

IPC: G06F13/00 ,  H04N7/173 ,  H04N21/431

CPC classification number: H04N7/147 ,  H04L65/607 ,  H04M3/42068 ,  H04M3/4211 ,  H04M3/436 ,  H04M2201/38 ,  H04M2201/50

Abstract: PROBLEM TO BE SOLVED: To smoothly start mutual video or audio communication. SOLUTION: On a display 41 of a communication apparatus 1-1 that a user A utilizes, slave pictures 151-153 for displaying received user disclosure information are superimposed and displayed on the right side of video of contents under reproduction. As indicated on an expansion window W, the slave picture 151 displays thereon a user's thumbnail image 161, information on the number of users (two users) utilizing the communication apparatus, a contents name "BS11ch" 163 being viewed on the communication apparatus, and video 164 of the contents that are stored as user setting information in the communication apparatus utilized by the users of session target members and further permitted to be disclosed for the user A. The present invention may be applied to a communication system that supports remote communication between users. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：顺利开展相互视频或音频通信。 解决方案：在用户A利用的通信设备1-1的显示器41上，用于显示接收到的用户公开信息的从属照片151-153被叠加显示在再现的内容的视频的右侧。 如扩展窗口W所示，从属图片151在其上显示用户的缩略图161，关于利用通信装置的用户数量（两个用户）的信息，在通信装置上观看的内容名称“BS11ch”163，以及 作为会话目标成员的用户使用的通信装置中的作为用户设置信息存储的内容的视频164，并且还允许为用户A公开。本发明可以应用于支持远程通信的通信系统 用户。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006039918A

公开(公告)日：2006-02-09

申请号：JP2004218528

申请日：2004-07-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SAKAI YUSUKE ,  SAITO NAOKI ,  KAMATA MIKIO

IPC: G06F21/62 ,  G06Q30/06 ,  G06Q50/00 ,  G06Q50/10 ,  H04N7/15 ,  H04N7/173 ,  H04N21/21 ,  H04N21/472

CPC classification number: H04L63/08 ,  G06Q10/10 ,  H04N7/1675 ,  H04N21/2347 ,  H04N21/2541 ,  H04N21/2547 ,  H04N21/25875 ,  H04N21/26603 ,  H04N21/26606 ,  H04N21/4405 ,  H04N21/4627 ,  H04N21/47202 ,  H04N21/8355

Abstract: PROBLEM TO BE SOLVED: To allow people in remote places to enjoy simultaneous playback of various contents while promoting the protection of copyright and privacy. SOLUTION: A copyright authenticating part 112 determines whether or not contents are usable on the basis of copyright restriction information added to the contents and license information stored in a license storage part 62, and controls a charging process part 114 according to the determination result to perform a charging process in cooperation with an authentication server. A privacy authentication part 115 determines whether or not the contents are usable according to privacy restriction information added to the contents and privacy information and controls a permission request processing part 117 according to the determination result to implement a communication process in cooperation with a communication device having the right to manage the privacy of the contents. The apparatus is applicable to a communication system that supports distant communication between users. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：允许偏远地区的人们同时播放各种内容，同时促进对版权和隐私的保护。 解决方案：版权认证部分112基于添加到许可证存储部分62中存储的内容和许可证信息的版权限制信息来确定内容是否可用，并且根据确定控制收费处理部分114 结果与认证服务器协作执行计费过程。 隐私认证部分115根据添加到内容的隐私限制信息和隐私信息来确定内容是否可用，并且根据确定结果控制许可请求处理部分117，以与具有 管理内容隐私的权利。 该装置适用于支持用户之间远程通信的通信系统。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006039917A

公开(公告)日：2006-02-09

申请号：JP2004218527

申请日：2004-07-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SAITO NAOKI ,  SAKAI YUSUKE ,  KAMATA MIKIO

IPC: G06T7/20

CPC classification number: G06K9/00355

Abstract: PROBLEM TO BE SOLVED: To implement a predetermined process based on how speakers in remote locations match in body or hand motion. SOLUTION: In a step S11, an image of a user A is inputted. In a step S12, identification data including a motion vector, the point of generation thereof, and the trajectory thereof are obtained from the image of the user A. In a step S13, a matching database is referred to so as to specify a motion command that matches the identification data. In a step S15, a determination is made as to whether or not the motion command of the user A matches the motion command of a user X. In a step S16, action matching each motion command is performed. This invention is applicable to, e.g., a communication device for use between remote places. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：基于远程位置中的扬声器如何在身体或手动中匹配来实现预定过程。 解决方案：在步骤S11中，输入用户A的图像。 在步骤S12中，从用户A的图像中获得包括运动矢量，其生成点及其轨迹的识别数据。在步骤S13中，参照匹配数据库以指定运动指令 匹配标识数据。 在步骤S15中，确定用户A的运动命令是否与用户X的运动命令相匹配。在步骤S16中，执行与每个运动命令匹配的动作。 本发明可应用于例如在远程位置之间使用的通信设备。 版权所有（C）2006，JPO＆NCIPI