公开(公告)号：JPS5470764A

公开(公告)日：1979-06-06

申请号：JP13747477

申请日：1977-11-16

Applicant: SONY CORP

Inventor： OKA YOSHIO ,  OZAWA HIDEKATSU ,  KUSAYANAGI MASAO ,  KAMATA MIKIO

IPC: H01L21/20 ,  H01L21/208

Abstract: PURPOSE:To form a crystal region featuring the desired face azimuth differnt from the substrate on the semiconductor substrate selectively. CONSTITUTION:Al evaporation layer 11a and 11b of about 30mum are formed selectively on Si substrate 10 of about 300mum thick featuring the {111} face, and then Si bar 13 featuring the {100} and {110} faces is put on the layers physically. The whole test sample is kept at average temperatures 1000-1050 deg.C, and about 1-hour process is given in the vacuum atmosphere with an inclination of about 100 deg.C/cm so that the bar plate side may feature a higher temperature than the Si substrate side. Thus, Al layer 11 is shifted by the heat. Then Si bar 12 and 13 plus layer 11a and 11b shifted to the back of the substrate by the heat are deleted, and thus region A, B and C are turned to the single crystals featuring the face azimuth of {111}, {100} and {110} respectively. This can be applied also to the poly-crystal substrate. In this method, the face azimuth suited to the function of each element can be formed within a sheet of the wafer, thus forming an excellent LSI.

公开(公告)号：JPS6161250B2

公开(公告)日：1986-12-24

申请号：JP13747477

申请日：1977-11-16

Applicant: SONY CORP

Inventor： OKA YOSHIO ,  OZAWA HIDEKATSU ,  KUSAYANAGI MASAO ,  KAMATA MIKIO

IPC: H01L21/20 ,  H01L21/208