公开(公告)号：JPS62254429A

公开(公告)日：1987-11-06

申请号：JP9884886

申请日：1986-04-28

Applicant: SONY CORP

Inventor： OKA YOSHIO ,  YAMAZAKI MASAAKI ,  FUTAJIMA OSAMU

IPC: H01L21/308 ,  H01L21/304 ,  H01L21/306

Abstract: PURPOSE:To prevent the generation of irregularity in impurity density by a method wherein the washing of a wafer is performed in the washing fluid contained in the quartz container having the percentage of content of aluminum oxide less than the specific amount. CONSTITUTION:In the method for washing of a silicon wafer with ammonia- hydrogen peroxide washing fluid, said washing is conducted using the washing fluid contained in the high purity quartz container having the percentage of content of 0.1wt.% or less of an aluminum oxide. As a result, the presence of Al on the surface of the silicon wafer washed by the above-mentioned fluid can be prevented, and the generation of irregularity of impurity density on the region in the vicinity of the interface of the wafer and the silicon layer formed on the wafer can also be prevented.

公开(公告)号：JPS6161250B2

公开(公告)日：1986-12-24

申请号：JP13747477

申请日：1977-11-16

Applicant: SONY CORP

Inventor： OKA YOSHIO ,  OZAWA HIDEKATSU ,  KUSAYANAGI MASAO ,  KAMATA MIKIO

IPC: H01L21/20 ,  H01L21/208

公开(公告)号：JPH07106257A

公开(公告)日：1995-04-21

申请号：JP24574793

申请日：1993-09-30

Applicant: SONY CORP

Inventor： OKA YOSHIO

IPC: C30B25/14 ,  B01J4/02 ,  G05D11/02 ,  H01L21/205

Abstract: PURPOSE:To enable controlling gas flow rate while maintaining the constant flow rate ratio of two or more kinds of gas. CONSTITUTION:When SiH4 gas and N2 gas are introduced, while maintaining a constant flow rate ratio, into a treatment equipment with a first MFC(mass flow controller) 31 and a second MFC 32, the flow rate is controlled in the first MFC 31 by comparing a flow rate detection signal A1 obtained by detecting the flow rate of the SiH4 gas with a flow rate setting signal B outputted from a potentiometer 10 for flow rate setting. In the second MFC 32, the flow rate of the N2 gas is controlled by comparing a detection operation signal A'2 calculated on the basis of the flow rate detection signal A1 and a specified flow rate ratio with a flow rate setting signal B2 outputted from a potentiometer 18 for flow rate setting.

公开(公告)号：JPS5470764A

公开(公告)日：1979-06-06

申请号：JP13747477

申请日：1977-11-16

Applicant: SONY CORP

Inventor： OKA YOSHIO ,  OZAWA HIDEKATSU ,  KUSAYANAGI MASAO ,  KAMATA MIKIO

IPC: H01L21/20 ,  H01L21/208

Abstract: PURPOSE:To form a crystal region featuring the desired face azimuth differnt from the substrate on the semiconductor substrate selectively. CONSTITUTION:Al evaporation layer 11a and 11b of about 30mum are formed selectively on Si substrate 10 of about 300mum thick featuring the {111} face, and then Si bar 13 featuring the {100} and {110} faces is put on the layers physically. The whole test sample is kept at average temperatures 1000-1050 deg.C, and about 1-hour process is given in the vacuum atmosphere with an inclination of about 100 deg.C/cm so that the bar plate side may feature a higher temperature than the Si substrate side. Thus, Al layer 11 is shifted by the heat. Then Si bar 12 and 13 plus layer 11a and 11b shifted to the back of the substrate by the heat are deleted, and thus region A, B and C are turned to the single crystals featuring the face azimuth of {111}, {100} and {110} respectively. This can be applied also to the poly-crystal substrate. In this method, the face azimuth suited to the function of each element can be formed within a sheet of the wafer, thus forming an excellent LSI.