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    Trilayered beam MEMS device and related methods
    62.
    发明公开
    Trilayered beam MEMS device and related methods 有权
    Dreischichtige Strahl-MEMS-Einrichtung unddiesbezüglicheVerfahren

    公开(公告)号：EP1717193A1

    公开(公告)日：2006-11-02

    申请号：EP06118798.5

    申请日：2002-11-08

    Applicant: WiSpry, Inc.

    Inventor： Cunningham, Shawn, J. ,  Tatic-Lucic, Svetlana

    IPC: B81B3/00

    CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

    Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

    Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 并且去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

    Method for Fabricating Suspended MEMS Structures
    68.
    发明申请
    Method for Fabricating Suspended MEMS Structures 有权
    制造悬浮MEMS结构的方法

    公开(公告)号：US20160304340A1

    公开(公告)日：2016-10-20

    申请号：US14687943

    申请日：2015-04-16

    Applicant: David J. Meyer ,  Brian P. Downey

    Inventor： David J. Meyer ,  Brian P. Downey

    IPC: B81C1/00

    CPC classification number: B81C1/00539 ,  B81C1/00936 ,  B81C2201/0107 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0177

    Abstract: A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

    Abstract translation: 一种用于制造悬浮微机电系统（MEMS）结构的方法，其包括部分或完全悬浮在衬底上的外延半导体功能层。 在基板上形成牺牲剥离层和功能元件层。 功能器件层被蚀刻以在功能器件层中形成窗口，其限定要由功能器件层形成的悬置的MEMS器件的轮廓。 然后用选择性释放蚀刻剂蚀刻牺牲剥离层，以去除由窗口限定的区域中的功能层下方的牺牲剥离层，以形成悬浮的MEMS结构。

    Horizontal coplanar switches and methods of manufacture
    70.
    发明授权
    Horizontal coplanar switches and methods of manufacture 有权
    水平共面开关及其制造方法

    公开(公告)号：US08878315B2

    公开(公告)日：2014-11-04

    申请号：US13768235

    申请日：2013-02-15

    Applicant: International Business Machines Corporation

    Inventor： Felix P. Anderson ,  Thomas L. McDevitt ,  Anthony K. Stamper

    IPC: H01L29/84 ,  B81C1/00 ,  H01H59/00 ,  G06F17/50

    CPC classification number: H01H59/00 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00182 ,  B81C2201/0107 ,  G06F17/5068

    Abstract: A MEMS structure and methods of manufacture. The method includes forming a sacrificial metal layer at a same level as a wiring layer, in a first dielectric material. The method further includes forming a metal switch at a same level as another wiring layer, in a second dielectric material. The method further includes providing at least one vent to expose the sacrificial metal layer. The method further includes removing the sacrificial metal layer to form a planar cavity, suspending the metal switch. The method further includes capping the at least one vent to hermetically seal the planar cavity.

    Abstract translation: MEMS结构及制造方法。 该方法包括在第一电介质材料中形成与布线层相同水平的牺牲金属层。 该方法还包括在第二电介质材料中形成与另一布线层相同水平的金属开关。 该方法还包括提供至少一个通风口以暴露牺牲金属层。 该方法还包括去除牺牲金属层以形成平坦的空腔，使金属开关悬挂。 该方法还包括加盖至少一个通气口以气密地密封平面腔。

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