公开(公告)号：EP1592641A2

公开(公告)日：2005-11-09

申请号：EP04737266.9

申请日：2004-01-29

Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE

Inventor： GOLOVCHENKO, Jene, A. ,  SCHURMANN, Gregor, M. ,  KING, Gavin, M. ,  BRANTON, Daniel

IPC: B81B1/00

CPC classification number: G01N33/48721 ,  B81C1/00087 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L22/14 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are selected to alter an extent of the gap. During exposure of the structure to the process environment, a voltage bias is applied across the gap. Electron tunneling current across the gap is measured during the process environment exposure and the process environment is controlled during process environment exposure based on tunneling current measurement. A method for controlling the gap between electrically conducting electrodes provided on a support structure. Each electrode has an electrode tip separated from other electrode tips by a gap. The electrodes are exposed to a flux of ions causing transport of material of the electrodes to corresponding electrode tips, locally adding material of the electrodes to electrode tips in the gap.

Abstract translation: 一种用于控制具有间隙的导电固态结构中的间隙的方法。 该结构暴露于制造工艺环境条件，其条件被选择以改变间隙的程度。 在结构暴露于工艺环境中时，跨越间隙施加电压偏置。 在工艺环境暴露期间测量跨越间隙的电子隧道电流，并且基于隧道电流测量在工艺环境暴露期间控制工艺环境。 一种用于控制设置在支撑结构上的导电电极之间的间隙的方法。 每个电极具有通过间隙与其它电极尖端分离的电极尖端。 电极暴露于离子通量，导致电极的材料转移到相应的电极尖端，将电极的材料局部地添加到间隙中的电极尖端。

公开(公告)号：EP1081093A3

公开(公告)日：2004-10-13

申请号：EP00115385.7

申请日：2000-07-15

Applicant: ROBERT BOSCH GMBH

Inventor： Laermer, Franz ,  Schilp, Andrea

IPC: B81B3/00 ,  H01L21/306 ,  H01L29/84

CPC classification number: B81C1/00476 ,  B81C1/00587 ,  B81C99/0065 ,  B81C2201/0109 ,  B81C2201/0138 ,  H01L21/67075 ,  H01L21/67086

Abstract: Es wird ein Verfahren zur Herstellung oberflächenmikromechanischer Strukturen vorgeschlagen, wobei zunächst auf ein beheizbares Substrat (25) eine Opferschicht (2) deponiert und strukturiert wird, die zumindest weitgehend oder bereichsweise aus Siliziumdioxid besteht, und dann auf der Opferschicht (2) eine zweite Schicht (3) abgeschieden und strukturiert wird. Anschließend wird dann die Opferschicht (2) in einem Ätzprozeß durch ein dampfförmiges, flußsäurehaltiges Ätzmedium (24) entfernt, wodurch die oberflächenmikromechanischen Strukturen (9) entstehen. Weiter wird mit dem fortschreitenden Entfernen der Opferschicht (2) eine kontrollierte Veränderung der relativen Feuchtigkeit in dem Ätzmedium (24) vorgenommen.

公开(公告)号：US11996294B2

公开(公告)日：2024-05-28

申请号：US17983560

申请日：2022-11-09

Applicant: Applied Materials, Inc.

Inventor： Alvaro Garcia De Gorordo ,  Zhonghua Yao ,  Sunil Srinivasan ,  Sang Wook Park

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/02112 ,  H01L21/02263 ,  H01L21/0234 ,  H01L21/02348 ,  B81C2201/0138 ,  H01L21/0228 ,  H01L21/30655 ,  H01L21/31116

Abstract: The present disclosure generally relates to substrate processing methods, such as etching methods with noble gases at low temperatures. In an aspect, the method includes exposing a substrate, a first layer comprising a gas, and a fluorine-containing layer to energy to form a passivation layer while maintaining the substrate at conditions encompassing a triple point temperature of the gas, the substrate positioned in a processing region of a processing chamber. The method further includes etching the substrate with ions.

公开(公告)号：US10005662B2

公开(公告)日：2018-06-26

申请号：US15680996

申请日：2017-08-18

Applicant: Texas Instruments Incorporated

Inventor： Lee Alan Stringer ,  Mona Eissa ,  Byron J. R. Shulver ,  Sopa Chevacharoenkul ,  Mark R. Kimmich ,  Sudtida Lavangkul ,  Mark L. Jenson

IPC: B81C1/00 ,  G01R33/04 ,  G01R33/00

CPC classification number: B81C1/00825 ,  B81C1/00365 ,  B81C2201/0138 ,  B81C2201/014 ,  G01R33/0047 ,  G01R33/0052 ,  G01R33/04

Abstract: A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.

公开(公告)号：US08946090B2

公开(公告)日：2015-02-03

申请号：US12452692

申请日：2008-07-02

Applicant: Volker Becker ,  Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

Inventor： Volker Becker ,  Franz Laermer ,  Tino Fuchs ,  Christina Leinenbach

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/02 ,  B81C1/00 ,  H01L21/3213

CPC classification number: H01L21/3065 ,  B81C1/00531 ,  B81C1/00595 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01L21/02019 ,  H01L21/30621 ,  H01L21/32135

Abstract: A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.

Abstract translation: 借助于选自ClF3和/或ClF5的蚀刻气体，通过SiGe混合半导体层的干法化学蚀刻来选择性地蚀刻硅半导体衬底上的SiGe混合半导体层的方法， 包括添加到蚀刻气体中的Cl 2和/或HCl。

公开(公告)号：US08703003B2

公开(公告)日：2014-04-22

申请号：US12763635

申请日：2010-04-20

Applicant: Kyle S. Lebouitz ,  David L. Springer ,  John J. Neumann, Jr.

Inventor： Kyle S. Lebouitz ,  David L. Springer ,  John J. Neumann, Jr.

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: H01L21/32135 ,  B81C1/00595 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01L21/3065 ,  H01L21/67017

Abstract: In a method of vapor etching, a sample that includes a first layer atop of and in contact with a second layer which is atop of and in contact with a third layer, wherein at least the first and second layers are comprised of different materials. The sample is etched by a vapor etchant under first process conditions that cause at least a part of the first layer to be fully removed while leaving the third layer and the second layer underlying the removed part of the first layer substantially unetched. The sample is then etched by the same or a different vapor etchant under second process conditions that cause at least the part of the second layer exposed by the removal of the at least part of the first layer to be fully removed while leaving the third layer underlying the removed part of the second layer substantially unetched.

Abstract translation: 在蒸气蚀刻的方法中，包括在与第三层顶部接触并与第三层接触的第二层顶部并与之接触的第一层的样品，其中至少第一层和第二层由不同的材料组成。 在第一工艺条件下，通过蒸气蚀刻剂对样品进行蚀刻，使第一层的至少一部分被完全除去，同时留下第三层，而第二层位于第一层的被除去的部分基本上未被蚀刻。 然后在第二工艺条件下，通过相同或不同的蒸气蚀刻剂对样品进行蚀刻，这导致通过去除第一层的至少部分而被除去的第二层的至少部分被完全去除，同时留下第三层 第二层的去除部分基本上未被蚀刻。

公开(公告)号：US07651946B2

公开(公告)日：2010-01-26

申请号：US11637020

申请日：2006-12-12

Applicant: Nicolle Wilke ,  Anthony Morrissey

Inventor： Nicolle Wilke ,  Anthony Morrissey

IPC: H01L21/311

CPC classification number: A61M37/0015 ,  A61M2037/003 ,  A61M2037/0046 ,  A61M2037/0053 ,  B81B2201/055 ,  B81C1/00626 ,  B81C99/0065 ,  B81C2201/0133 ,  B81C2201/0138

Abstract: A method of wet etching produces high-precision microneedle arrays for use in medical applications. The method achieves precise process control over microneedle fabrication, at single wafer or batch-level, using wet etching of silicon with potassium hydroxide (KOH) solution by accurately identifying the etch time endpoint. Hence, microneedles of an exactly required height, shape, sharpness and surface quality are achieved. The outcome is a reliable, reproducible, robust and relatively inexpensive microneedle fabrication process. Microneedles formed by KOH wet etching have extremely smooth surfaces and exhibit superior mechanical and structural robustness to their dry etched counterparts. These properties afford extra reliability to such silicon microneedles, making them ideal for medical applications. The needles can also be hollowed. Wet etched silicon microneedles can then be employed as masters to replicate the improved surface and structural properties in other materials (such as polymers) by moulding.

Abstract translation: 湿蚀刻的方法产生用于医疗应用的高精度微针阵列。 该方法通过精确地识别蚀刻时间终点，通过使用氢氧化钾（KOH）溶液对硅进行湿蚀刻，在单晶片或批次水平上实现了微针制造的精确过程控制。 因此，实现了精确要求的高度，形状，锐度和表面质量的微针。 结果是可靠，可重现，稳健且相对便宜的微针制作工艺。 通过KOH湿蚀刻形成的微针具有非常光滑的表面，并且对其干蚀刻的对应物表现出优异的机械和结构坚固性。 这些性能为这种硅微针提供了额外的可靠性，使其成为医疗应用的理想选择。 针也可以是中空的。 湿法蚀刻的硅微针可用作主机，通过模制复制其他材料（如聚合物）中改进的表面和结构性能。

公开(公告)号：US07569488B2

公开(公告)日：2009-08-04

申请号：US11767430

申请日：2007-06-22

Applicant: Marjorio Rafanan

Inventor： Marjorio Rafanan

IPC: H01L21/302

CPC classification number: B81C1/00476 ,  B81C1/00801 ,  B81C99/0065 ,  B81C2201/0138

Abstract: Embodiments of the present invention relate to methods and systems for making a microelectromechanical system MEMS device comprising supplying an etchant to etch one or more sacrificial structures of the system in a chamber. A process parameter relating to the pressure within the chamber is monitored as a function of time to provide an indication of the extent of the etching of the one or more sacrificial structures.

Abstract translation: 本发明的实施例涉及用于制造微机电系统（MEMS）装置的方法和系统，包括提供蚀刻剂以蚀刻腔室中的系统的一个或多个牺牲结构。 作为时间的函数来监测与室内的压力相关的过程参数，以提供对一个或多个牺牲结构的蚀刻程度的指示。

公开(公告)号：US07479454B2

公开(公告)日：2009-01-20

申请号：US10674703

申请日：2003-09-30

Applicant: David L. O'Meara ,  Daniel Craig Burdett ,  Stephen H. Cabral ,  Gert Leusink ,  John William Kostenko ,  Cory Wajda

Inventor： David L. O'Meara ,  Daniel Craig Burdett ,  Stephen H. Cabral ,  Gert Leusink ,  John William Kostenko ,  Cory Wajda

IPC: H01L21/302

CPC classification number: H01L21/67276 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/67253

Abstract: A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.

Abstract translation: 一种在过程中监视系统组件的状态的方法和系统。 该方法包括在过程期间将系统组分暴露于反应气体，其中反应气体能够蚀刻系统组分材料以形成侵蚀产物，并且在该过程期间监测侵蚀产物的释放以确定系统部件的状态 。 可以监测的方法包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺。 系统组件可以是消耗系统部件，例如处理管，屏蔽件，环，挡板，注射器，衬底保持器，衬垫，基座，帽盖，电极和加热器 其可以进一步包括保护涂层。 处理系统包括处理室中的系统部件，用于引入反应气体的气体注入系统，用于监视系统部件的状态的室保护系统以及响应于状态来控制处理系统的控制器。

公开(公告)号：US20080147229A1

公开(公告)日：2008-06-19

申请号：US11814247

申请日：2006-01-17

Applicant: Anthony O'Hara ,  Michael Leavy ,  Graeme Pringle

Inventor： Anthony O'Hara ,  Michael Leavy ,  Graeme Pringle

IPC: G06F17/00

CPC classification number: H01J37/32935 ,  B81C1/00476 ,  B81C99/0065 ,  B81C2201/0138

Abstract: An etching monitoring apparatus and related method for use in the manufacture of microstructures (and in particular MEMS) located within an etching chamber is described. The apparatus and related method operates by setting the temperature of the chamber within which the microstructure is located at a starting temperature, and maintaining the partial pressure of an etching gas within the chamber at a constant value. As a result the surface temperature of the microstructure within the chamber is primarily determined by the etch rate. Therefore, by employing a thermometer to monitor the change in etching surface temperature, a direct diagnostic for monitoring the etching process is provided.

Abstract translation: 描述了用于制造位于蚀刻室内的微结构（特别是MEMS）的蚀刻监测装置和相关方法。 该装置和相关方法通过将微观结构所在的室的温度设定在起始温度并将室内的蚀刻气体的分压保持在恒定值来进行操作。 结果，室内微结构的表面温度主要由蚀刻速率决定。 因此，通过采用温度计来监测蚀刻表面温度的变化，提供了用于监测蚀刻工艺的直接诊断。