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公开(公告)号：JP2004524539A
公开(公告)日：2004-08-12
申请号：JP2002581591
申请日：2002-03-05
Inventor： アルトマン ハンス , ベンツェル フーベルト , シェーファー フランク , ヴェーバー ヘリベルト
IPC: G01N21/03 , B81C1/00 , C25F3/12 , C25F3/14 , H01L21/306 , H01L21/308
CPC classification number: B81B3/0083 , B81B2203/0315 , B81C2201/0114 , B81C2201/0115 , B81C2201/0178 , C25F3/12 , C25F3/14 , H01L21/306 , H01L21/3081
Abstract: 任意の厚さの光透過性領域およびシリコン基板内の空隙の上に光透過性領域を実現できる、シリコン基板（１）に光透過性領域（５，６）を形成する簡単かつ廉価な可能性が提案される。 このためにまずシリコン基板（１）の少なくとも１個の決められた領域（５，６）を多孔質にエッチングする。 その後シリコン基板（１）の決められた多孔質領域（５，６）を酸化する。
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公开(公告)号：JP2004516160A
公开(公告)日：2004-06-03
申请号：JP2002552847
申请日：2001-12-13
Inventor： アルトマン ハンス , ベンツェル フーベルト , シェーファー フランク , ヴェーバー ヘリベルト
CPC classification number: B81C1/00182 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C2201/0114 , B81C2201/0115 , B81C2201/0178
Abstract: 本発明は、基板（１）と、基板（１）の上に設けられた、膜領域（１０ａ）を有する単結晶層（１０）と、膜領域（１０ａ）の下に設けられた中空室（５０）と、単結晶層（１０）内に設けられた、周囲の層（１０）に比較して高められたドーピング（ｎ
＋ ；ｐ
＋ ）を有する単数又は複数の多孔質領域（１５０；１５０'）とを有するマイクロメカニックス構成素子を提供する。-
公开(公告)号：JP2012533441A
公开(公告)日：2012-12-27
申请号：JP2012521023
申请日：2010-07-20
Applicant: モントレ ブレゲ エスエー
Inventor： カラパティス，ナキス
CPC classification number: B81C1/00682 , B81B2201/035 , B81C1/00674 , B81C2201/0178 , Y10T29/49986
Abstract: 【課題】 新規な補強シリコン製マイクロメカニカル部品の製造方法を提供する。
【解決手段】 本発明の新規な補強シリコンマイクロメカニカル部品の製造方法は下記の順の、
(A)シリコンウエハ内に部品又は部品のバッチを微細機械加工するステップと、
(B)自然二酸化珪素の厚さよりも少なくとも５倍超の厚さの二酸化珪素を生成するために、一ステップ又は数ステップで、前記部品の全ての外面上に二酸化珪素層を形成するステップと、
(C)エッチングにより二酸化珪素層を除去するステップと、
からなる。
【選択図】 図３-
公开(公告)号：JP2009190150A
公开(公告)日：2009-08-27
申请号：JP2008035718
申请日：2008-02-18
Applicant: Sanyo Electric Co Ltd , 三洋電機株式会社
Inventor： NAGASAKI HIRONORI
CPC classification number: H03H3/0072 , B81B2201/0271 , B81B2203/0118 , B81B2203/033 , B81B2203/04 , B81C1/00182 , B81C2201/0178 , H01G5/16 , H03H9/2463 , H03H2009/02496 , Y10T29/49002
Abstract: PROBLEM TO BE SOLVED: To provide a microelectromechanical device further narrowing a gap, and also to provide its manufacturing method. SOLUTION: In the microelectromechanical device, a resonator 22 and an electrode 21 are faced with each other, and the narrowed gap is arranged between both thermal oxidation films by forming a pair of thermal oxidation films 5, 5 on the opposite surfaces. In a manufacturing process of a microelectromechanical device, after forming a groove 20 as a gap by applying a processing using photolithography and etching to the resonator 22 and an Si layer as an electrode 21, the pair of thermal oxidation films 5, 5 of Si are formed on the opposite surfaces of the groove 20 by applying thermal oxidation treatment to the Si layer. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：提供进一步缩小间隙的微机电装置，并提供其制造方法。 解决方案：在微机电装置中，谐振器22和电极21彼此面对，并且通过在相对的表面上形成一对热氧化膜5,5将两个热氧化膜之间的窄间隙布置。 在微电子机械装置的制造工序中，通过对谐振器22进行光刻，蚀刻加工，Si层作为电极21，在形成槽20后形成沟槽20，Si的热氧化膜对5 通过对Si层进行热氧化处理而形成在槽20的相对表面上。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP4253507B2
公开(公告)日：2009-04-15
申请号：JP2002581591
申请日：2002-03-05
Inventor： アルトマン ハンス , ベンツェル フーベルト , シェーファー フランク , ヴェーバー ヘリベルト
IPC: G01N21/03 , B81C1/00 , C25F3/12 , C25F3/14 , H01L21/306 , H01L21/308
CPC classification number: B81B3/0083 , B81B2203/0315 , B81C2201/0114 , B81C2201/0115 , B81C2201/0178 , C25F3/12 , C25F3/14 , H01L21/306 , H01L21/3081
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Patent Agency Ranking
公开(公告)号：EP2001062A9
公开(公告)日：2009-04-08
申请号：EP07740161.0
申请日：2007-03-28
Inventor： HIRANO, Takayuki , KAWAKAMI, Nobuyuki , KANNAKA, Masato
CPC classification number: G01F1/692 , B81B2201/0278 , B81B2203/0127 , B81C1/00666 , B81C2201/0169 , B81C2201/0178 , C23C16/402 , C23C16/56 , Y10T428/24488 , Y10T428/24612
Abstract: It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.
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67.发明公开MEMBRANE STRUCTURE ELEMENT AND METHOD FOR MANUFACTURING SAME 有权HERMTELLUNGSVERFAHRENDAFÜR的MEMBRANSTRUKTURELEMENT
公开(公告)号：EP2001062A2
公开(公告)日：2008-12-10
申请号：EP07740161.0
申请日：2007-03-28
Inventor： HIRANO, Takayuki , KAWAKAMI, Nobuyuki , KANNAKA, Masato
CPC classification number: G01F1/692 , B81B2201/0278 , B81B2203/0127 , B81C1/00666 , B81C2201/0169 , B81C2201/0178 , C23C16/402 , C23C16/56 , Y10T428/24488 , Y10T428/24612
Abstract: It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.
Abstract translation: 本发明提供可以容易地制造的膜结构元件，具有优异的绝缘性和高质量; 和膜结构元件的制造方法。 该制造方法用于制造膜结构元件，该膜结构元件包括由氧化硅膜形成的膜和通过支撑膜周边的一部分而将膜支撑在中空状态的基板。 该方法包括：通过等离子体CVD法在硅衬底2的表面上形成热收缩氧化硅膜13的成膜步骤; 进行热处理以使形成在基板1上的氧化硅膜13的热收缩的热处理步骤; 以及去除基板2的一部分的去除步骤，使得氧化硅膜13的膜相应部分作为相对于基板2的中空状态的膜被支撑以形成凹部4。
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公开(公告)号：EP1585702B1
公开(公告)日：2006-07-05
申请号：EP03756438.2
申请日：2003-09-12
Applicant: Conti Temic microelectronic GmbH
Inventor： AIKELE, Matthias , ENGELHARDT, Albert , FREY, Marcus , HARTMANN, Bernhard , SEIDEL, Helmut
IPC: B81C1/00
CPC classification number: B81C1/00698 , B81B2201/0235 , B81B2203/033 , B81C2201/0178
Abstract: The invention relates to methods for producing insulation structures for micromechanical sensors according to a monocrystalline surface technique. According to known methods, silicon structures defined by deep trenches are etched and the lower side thereof facing the substrate is exposed by a release etch step. The filling of said trenches with a dielectrically insulating material, such as silicon dioxide, enables the silicon structure to be solidly clutched on three sides. The invention is based on the fact that instead of filling trenches, thin-walled silicon is converted into an electrically non-conductive material. This can be carried out, for example, by means of thermal oxidation of narrow silicon sections previously exposed by trenches. In a minimal configuration, two trenches (holes) must be etched per section with the desired structural depth. The interlying silicon section must be narrow enough to be able to be fully thermally oxidised.
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公开(公告)号：EP1347937A2
公开(公告)日：2003-10-01
申请号：EP01990295.6
申请日：2001-12-13
Applicant: ROBERT BOSCH GMBH
Inventor： BENZEL, Hubert , WEBER, Heribert , ARTMANN, Hans , SCHAEFER, Frank
IPC: B81B3/00
CPC classification number: B81C1/00182 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C2201/0114 , B81C2201/0115 , B81C2201/0178
Abstract: The invention relates to a micromechanical component comprising: a substrate (1); a monocrystalline layer (10), which is provided above the substrate (1) and which has a membrane region (10a); a cavity (50) that is provided underneath the membrane region (10a), and; one or more porous regions (150; 150'), which are provided inside the monocrystalline layer (10) and which have a doping (n+; p+) that is higher than that of the surrounding layer (10).
Abstract translation: 本发明涉及一种微机械部件，该微机械部件包括：衬底（1）; 设置在所述衬底（1）上方并且具有膜区域（10a）的单晶层（10）; 设置在膜区域（10a）下方的空腔（50），以及; 一个或多个设置在单晶层（10）内并且具有比周围层（10）的掺杂（n +; p +）更高的多孔区域（150; 150'）。
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70.发明公开Structure, method of manufacturing the same and DNA separation device using the same 审中-公开Struktur，Verfahren zu deren Herstellung und diese benutzende DNA-Trennvorrichtung
公开(公告)号：EP1217366A2
公开(公告)日：2002-06-26
申请号：EP01124514.9
申请日：2001-10-12
Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
Inventor： Izuo, Shinichi , Ohji, Hiroshi , Tsutsumi, Kazuhiko
IPC: G01N27/447
CPC classification number: B81C1/00111 , B81B2201/0214 , B81C2201/0114 , B81C2201/0178 , G01N27/44791
Abstract: The invention relates to providing a columnar structure having a uniform shape and excellent heat resistance and mechanical strength that is formed on a substrate of silicon, a method of preparing the structure, and a DNA separation device prepared by the method. The structure has, on a substrate (11) made of silicon, columns (12) the main surface of which is covered with a thermally oxidized film (16). The columns (12) are made of the thermally oxidized film (16) only or of the thermally oxidized film (16) and silicon. The thermally oxidized film formed on the columns (12) is connected to those formed on the surface or inside of the substrate (11).
Abstract translation: 本发明涉及提供具有均匀形状和在硅衬底上形成的优异耐热性和机械强度的柱状结构，制备该结构的方法以及通过该方法制备的DNA分离装置。 该结构在由硅制成的基板（11）上具有主表面被热氧化膜（16）覆盖的柱（12）。 柱（12）仅由热氧化膜（16）或热氧化膜（16）和硅制成。 形成在列（12）上的热氧化膜与在基板（11）的表面或内部形成的热氧化膜连接。
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