公开(公告)号：KR1020140140053A

公开(公告)日：2014-12-08

申请号：KR1020147027309

申请日：2013-02-26

Applicant: 솔렉셀, 인크.

Inventor： 요네하라,타카오 ,  라나,비렌드라,브이. ,  수터,션 ,  모슬레히,메드다드,엠. ,  타미마니,서브라마니안

IPC: H01L21/301 ,  H01L21/268 ,  B23K26/00

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0054 ,  B23K26/0057 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/702 ,  B23K2201/40 ,  B23K2203/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: 방법 및 시스템은 레이저 조사를 이용하여 두꺼운 도너 웨이퍼에서, 광학, 광전, 전자, 마이크로 전자 기계 시스템 (MEMS)을 포함하는 결정질 반도체 물질, 또는 광전자 장치의 원하는 두께의 층을 분할 및 분리를 위해 제공된다(Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation).

Abstract translation: 提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：KR1020030015384A

公开(公告)日：2003-02-20

申请号：KR1020037000449

申请日：2001-07-11

Applicant: 꼼미사리아 아 레네르지 아또미끄 에 오 에네르지 알떼르나띠브스

Inventor： 아스파베르나르 ,  라가슈크리스텔

IPC: H01L27/12

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: 본 발명의 소정의 물질로 된 블록(10)을 절단하는 방법에 관한 것으로서, 다음의 단계를 포함한다: (a) 블록 내에 적어도 한 단계의 이온 주입에 의하여 취성화된 매몰 영역(12)을 형성하는 단계로서, 매몰 영역은 적어도 하나의 표면부를 한정하는 매몰 영역을 형성하는 단계; (b) 도구를 집어넣는 방법, 유체를 주입하는 방법, 열 처리 방법 및/또는 이전 단계에서 주입된 이온과 다른 종류의 이온을 주입하는 방법 중에서 선택된 제1 분리 수단을 사용함으로써 취성 영역이 위치하는 곳에 적어도 하나의 초기 클리비지(30, 36)를 형성하는 단계; 및 (c) 제1 분리 수단과는 다르며 열처리 방법 및/또는 표면부 및 취성 영역 사이에 기계적인 힘을 가하는 방법 중에서 선택된 제2 수단을 사용하여 취성 영역이 위치하는 곳에서 초기 클리비지에서부터, 주요부라고 칭해지는 잔류부로부터 블록의 표면부를 분리하는 단계. 본 발명은 마이크로-일렉트로닉스, 옵토-일렉트로닉스 및 마이크로-메카닉스의 일 구성요소를 제조하는데 유용하다.

Abstract translation: 用于切割材料块的方法包括在块中引入离子从而形成脆化区并限定块的至少一个表面部分的步骤。 该方法还包括在脆化区水平形成至少一种分离引发剂的步骤，其中形成分离引发剂的步骤包括注入离子性质不同于先前步骤中引入的离子的离子。 该方法进一步包括在脆化区水平上从分离引发剂的块剩余部分分离块的表面部分的步骤，其中分离步骤包括热处理和机械施加中的至少一种 在浅表部分和脆化区域之间作用的力。

公开(公告)号：US20180118562A1

公开(公告)日：2018-05-03

申请号：US15565445

申请日：2015-06-23

Applicant: SILTECTRA GmbH

Inventor： Wolfram Drescher ,  Franz Schilling ,  Jan Richter

IPC: B81C1/00 ,  H01L21/762 ,  H01L31/18 ,  B23K26/00

CPC classification number: B28D5/0011 ,  B23K26/53 ,  B23K2101/36 ,  B28D1/221 ,  B81C1/00357 ,  B81C1/0038 ,  B81C2201/0192 ,  H01L21/76251 ,  H01L31/1804 ,  H01L31/1896

Abstract: The present invention relates to a method for producing a multi-component wafer, in particular a MEMS wafer. The method according to the invention comprises at least the following steps: providing a bonding wafer (2), wherein at least one surface portion (4) of the bonding wafer (2) is formed by an oxide film, providing a dispenser wafer (6), wherein the dispenser wafer (6) is thicker than the bonding wafer (2), bringing the dispenser wafer (6) into contact with the surface portion (4) of the bonding wafer (2) that is formed by the oxide film, forming a multilayer arrangement (8) by connecting the dispenser wafer (6) and the bonding wafer (2) in the region of the contact, producing modifications (18) in the interior of the dispenser wafer (6) for predefining a detachment region (11) for separating the multilayer arrangement (8) into a detaching part (14) and a connecting part (16), wherein the production of the modifications (18) takes place before the formation of the multilayer arrangement (8) or after the formation of the multilayer arrangement (8), separating the multilayer arrangement along the detachment region as a result of a weakening of the multilayer arrangement brought about by the production of a sufficient number of modifications or as a result of production of mechanical stresses in the multilayer arrangement, wherein the connecting part (16) remains on the bonding wafer (2) and wherein the split-off detachment part (14) has a greater thickness than the connecting part (16).

公开(公告)号：US20160336233A1

公开(公告)日：2016-11-17

申请号：US14968685

申请日：2015-12-14

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Virendra V. Rana ,  Sean M. Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC: H01L21/78 ,  B81C1/00 ,  H01L33/00 ,  H01L21/268 ,  H01L31/18

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract translation: 提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：US08796746B2

公开(公告)日：2014-08-05

申请号：US12499027

申请日：2009-07-07

Applicant: Xiao (Charles) Yang

Inventor： Xiao (Charles) Yang

IPC: H01L29/84 ,  H01L21/30

CPC classification number: G01L9/0073 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2201/0192 ,  G01L9/0042 ,  G01L9/0054

Abstract: A monolithically integrated MEMS pressure sensor and CMOS substrate using IC-Foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A diaphragm is then added on top of the CMOS. In one embodiment, the diaphragm is made of deposited thin films with stress relief corrugated structure. In another embodiment, the diaphragm is made of a single crystal silicon material that is layer transferred to the CMOS substrate. In an embodiment, the integrated pressure sensor is encapsulated by a thick insulating layer at the wafer level. The monolithically integrated pressure sensor that adopts IC foundry-compatible processes yields the highest performance, smallest form factor, and lowest cost.

Abstract translation: 使用IC-Foundry兼容工艺的单片集成MEMS压力传感器和CMOS衬底。 CMOS基板首先使用标准IC工艺完成。 然后将膜片添加到CMOS的顶部。 在一个实施例中，隔膜由具有应力消除波纹结构的沉积薄膜制成。 在另一个实施例中，膜片由层转移到CMOS衬底的单晶硅材料制成。 在一个实施例中，集成压力传感器由晶圆级的厚绝缘层封装。 采用IC代工兼容工艺的单片式压力传感器产生最高性能，最小的外形尺寸和最低的成本。

公开(公告)号：US08470631B2

公开(公告)日：2013-06-25

申请号：US12727978

申请日：2010-03-19

Applicant: Torsten Kramer ,  Kathrin Knese ,  Hubert Benzel ,  Karl-Heinz Kraft ,  Simon Armbruster

Inventor： Torsten Kramer ,  Kathrin Knese ,  Hubert Benzel ,  Karl-Heinz Kraft ,  Simon Armbruster

IPC: H01L21/00

CPC classification number: B81C1/00333 ,  B81C2201/0192 ,  B81C2203/0118 ,  B81C2203/0127 ,  H01L2924/16235

Abstract: A simple and economical method for manufacturing very thin capped MEMS components. In the method, a large number of MEMS units are produced on a component wafer. A capping wafer is then mounted on the component wafer, so that each MEMS unit is provided with a capping structure. Finally, the MEMS units capped in this way are separated to form MEMS components. A diaphragm layer is formed in a surface of the capping wafer by using a surface micromechanical method to produce at least one cavern underneath the diaphragm layer, support points being formed that connect the diaphragm layer to the substrate underneath the cavern. The capping wafer structured in this way is mounted on the component wafer in flip chip technology, so that the MEMS units of the component wafer are capped by the diaphragm layer. The support points are then cut through in order to remove the substrate.

Abstract translation: 一种用于制造非常薄的封装的MEMS部件的简单而经济的方法。 在该方法中，在部件晶片上产生大量的MEMS单元。 然后将封盖晶片安装在元件晶片上，使得每个MEMS单元设置有封盖结构。 最后，以这种方式封盖的MEMS单元被分离以形成MEMS部件。 通过使用表面微机械方法在覆盖晶片的表面中形成隔膜层，以在隔膜层下面产生至少一个洞穴，形成将隔膜层连接到洞穴下方的基底的支撑点。 以这种方式构造的封盖晶片以倒装芯片技术安装在元件晶片上，使得元件晶片的MEMS单元被隔膜层封盖。 然后将支撑点切开以去除基底。

公开(公告)号：US08241931B1

公开(公告)日：2012-08-14

申请号：US12899292

申请日：2010-10-06

Applicant: Christophe Antoine ,  John R. Martin

Inventor： Christophe Antoine ,  John R. Martin

IPC: H01L21/00

CPC classification number: B28D5/00 ,  B81C1/00158 ,  B81C2201/0192 ,  B81C2201/0195

Abstract: A method of producing a MEMS device provides a first substrate having a first interior surface and thickness, and a second substrate having a second interior surface. The method also forms at least one closed wall on at least one of the first and second substrates, weakens the first substrate in a plane generally parallel to the first interior surface, and secures the first substrate to the second substrate. The at least one closed wall extends between the first interior surface and the second interior surface. The method further separates a portion of the first substrate along the plane generally parallel to the first interior surface after securing the first and second substrates, and removes an excess portion of the first substrate to produce a reduced thickness first substrate of no greater than about 20 microns.

Abstract translation: 制造MEMS器件的方法提供具有第一内表面和厚度的第一基底和具有第二内表面的第二基底。 该方法还在至少一个第一和第二基底上形成至少一个闭合壁，在大致平行于第一内表面的平面中削弱第一基底，并将第一基底固定到第二基底。 所述至少一个封闭壁在所述第一内表面和所述第二内表面之间延伸。 该方法在固定第一和第二基板之后进一步分离第一基板的沿着大致平行于第一内表面的平面的一部分，并移除第一基板的多余部分以产生不大于约20的第一基板 微米。

公开(公告)号：US20110294306A1

公开(公告)日：2011-12-01

申请号：US13207304

申请日：2011-08-10

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/263

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN or SiC. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.

Abstract translation: 一种用于形成多材料薄膜的方法包括提供包括单晶硅的多材料供体衬底和包括GaN或SiC的上覆膜。 能量粒子通过多材料供体衬底的表面引入单晶硅内的选定深度。 该方法包括向施主衬底的选定区域提供能量，以在施主衬底中开始受控的切割作用。 然后，使用传播劈裂前端从施主衬底的剩余部分释放多材料膜，所述多材料膜包括单晶硅和上覆膜。

公开(公告)号：US08012852B2

公开(公告)日：2011-09-06

申请号：US12789361

申请日：2010-05-27

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/30

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US20100171153A1

公开(公告)日：2010-07-08

申请号：US12499027

申请日：2009-07-07

Applicant: Xiao (Charles) Yang

Inventor： Xiao (Charles) Yang

IPC: H01L29/84 ,  H01L21/30

CPC classification number: G01L9/0073 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2201/0192 ,  G01L9/0042 ,  G01L9/0054

Abstract: A monolithically integrated MEMS pressure sensor and CMOS substrate using IC-Foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A diaphragm is then added on top of the CMOS. In one embodiment, the diaphragm is made of deposited thin films with stress relief corrugated structure. In another embodiment, the diaphragm is made of a single crystal silicon material that is layer transferred to the CMOS substrate. In an embodiment, the integrated pressure sensor is encapsulated by a thick insulating layer at the wafer level. The monolithically integrated pressure sensor that adopts IC foundry-compatible processes yields the highest performance, smallest form factor, and lowest cost.

Abstract translation: 使用IC-Foundry兼容工艺的单片集成MEMS压力传感器和CMOS衬底。 CMOS基板首先使用标准IC工艺完成。 然后将膜片添加到CMOS的顶部。 在一个实施例中，隔膜由具有应力消除波纹结构的沉积薄膜制成。 在另一个实施例中，膜片由层转移到CMOS衬底的单晶硅材料制成。 在一个实施例中，集成压力传感器由晶圆级的厚绝缘层封装。 采用IC代工兼容工艺的单片式压力传感器产生最高性能，最小的外形尺寸和最低的成本。