Germanium silicon oxynitride high index films for planar waveguides
    61.
    发明申请
    Germanium silicon oxynitride high index films for planar waveguides 有权
    锗硅氮氧化物用于平面波导的高折射率膜

    公开(公告)号:US20020106174A1

    公开(公告)日:2002-08-08

    申请号:US10068968

    申请日:2002-02-07

    Abstract: A composition represented by the formula Si1nullxGexO2(1nully)N1.33y, wherein x is from about 0.05 to about 0.6 and y is from about 0.14 to about 0.74 exhibits properties highly suited for use in fabricating waveguides for liquid crystal based optical devices. In particular, the compositions have an index of refraction of from about 1.6 to about 1.8 for light at a wavelength of 1550 nm, and/or a coefficient of thermal expansion of from about 2.5null10null6null C.null1 to about 5.0null10null6null C. null1. The compositions also have inherently low hydrogen content, and a high hydrogen permeability which allows better hydrogen removal by thermal annealing to provide a material which exhibits low optical losses and better etching properties than alternative materials.

    Abstract translation: 由式Si1-xGexO2(1-y)N1.33y表示的组合物,其中x为约0.05至约0.6,y为约0.14至约0.74,表现出非常适合用于制造液晶基光学波导的性能 设备。 特别地,组合物对于波长1550nm的光具有约1.6至约1.8的折射率,和/或约2.5×10-6℃-1至约5.0×10 10的热膨胀系数 -6℃-1。 组合物还具有固有的低氢含量和高的氢渗透性,其允许通过热退火更好的氢去除以提供与替代材料相比表现出低的光损耗和更好的蚀刻性能的材料。

    Germanium silicon oxynitride high index films for planar waveguides
    62.
    发明授权
    Germanium silicon oxynitride high index films for planar waveguides 有权
    锗硅氮氧化物用于平面波导的高折射率膜

    公开(公告)号:US06408125B1

    公开(公告)日:2002-06-18

    申请号:US09437677

    申请日:1999-11-10

    Abstract: A composition represented by the formula Si1−xGexO2(1−y)N1.33y, wherein x is from about 0.05 to about 0.6 and y is from about 0.14 to about 0.74 exhibits properties highly suited for use in fabricating waveguides for liquid crystal based optical devices. In particular, the compositions have an index of refraction of from about 1.6 to about 1.8 for light at a wavelength of 1550 nm, and/or a coefficient of thermal expansion of from about 2.5×10−6° C.−1 to about 5.0×10−6° C.−1. The compositions also have inherently low hydrogen content, and a high hydrogen permeability which allows better hydrogen removal by thermal annealing to provide a material which exhibits low optical losses and better etching properties than alternative materials.

    Abstract translation: 由式Si1-xGexO2(1-y)N1.33y表示的组合物,其中x为约0.05至约0.6,y为约0.14至约0.74,表现出非常适合用于制造液晶基光学波导的性能 设备。 特别地,组合物对于波长1550nm的光具有约1.6至约1.8的折射率,和/或约2.5×10-6℃-1至约5.0×10 10的热膨胀系数 -6℃-1。 组合物还具有固有的低氢含量和高的氢渗透性,其允许通过热退火更好的氢去除以提供与替代材料相比表现出低的光损耗和更好的蚀刻性能的材料。

    Quartz glass products and methods for making same
    63.
    发明授权
    Quartz glass products and methods for making same 失效
    石英玻璃制品及其制作方法

    公开(公告)号:US06355587B1

    公开(公告)日:2002-03-12

    申请号:US08914288

    申请日:1997-08-18

    Abstract: The application discloses a number of unique sintered quartz glass products together with new silica compositions and processes for making and using such products. Nitrided clear and opaque nitrided quartz products are disclosed having incredible physical properties resulting from the incorporation of very small, but effective, amounts (e.g., 25 ppm or more) of chemically bound nitrogen. Opaque quartz glass heat shields with remarkable resistance to transmission of infrared radiation are disclosed which can have a high bubble population density, such as 80 to 120 per mm2. These heat shields make possible remarkable improvement in the performance of tube furnaces and other reactors used in processing silicon wafers and other electronic components.

    Abstract translation: 该申请公开了许多独特的烧结石英玻璃产品以及新的二氧化硅组合物和制备和使用这些产品的方法。 公开了氮化透明和不透明的氮化石英产物,其具有由于引入非常小但有效的化学键合氮的量(例如25ppm或更多)而产生的令人难以置信的物理性质。 公开了具有显着的抗红外辐射透射性的不透明石英玻璃隔热罩,其可以具有高的气泡总体密度,例如80至120 / mm 2。 这些隔热罩可以显着改善用于处理硅晶片和其他电子部件的管式炉和其他反应器的性能。

    Quartz glass crucible for pulling silicon single crystal and production process for such crucible
    64.
    发明授权
    Quartz glass crucible for pulling silicon single crystal and production process for such crucible 有权
    用于拉硅单晶的石英玻璃坩埚和这种坩埚的生产工艺

    公开(公告)号:US06280522B1

    公开(公告)日:2001-08-28

    申请号:US09508695

    申请日:2000-03-29

    Abstract: There is provided a quartz glass crucible for pulling a silicon single crystal and a production process for the crucible, wherein an inner surface of the crucible is crystallized without addition of impurities during pulling a silicon single crystal, thereby impurities serving as causes of crystal defects being not incorporated into the silicon single crystal, so that deterioration of its inner surface is suppressed to improve a crystallization ratio, and accordingly productivity of the quartz glass crucible as well as a quality of the silicon single crystal is improved, and the quartz glass crucible for pulling a silicon single crystal comprises a crucible base body (3) made of a translucent quartz glass layer and a synthetic quartz glass layer (4) formed on an inner wall surface of the crucible base body (3), wherein a portion encircled by a brown ring on an inner surface of the quartz glass crucible is uniformly crystallized during pulling the silicon single crystal.

    Abstract translation: 提供了一种用于拉制硅单晶的石英玻璃坩埚和用于坩埚的制造方法,其中在拉取硅单晶时坩埚的内表面结晶而不添加杂质,从而导致晶体缺陷的原因是 不掺入到硅单晶中,从而抑制其内表面的劣化以提高结晶化率,从而提高了石英玻璃坩埚的生产率以及硅单晶的质量,并且提高了石英玻璃坩埚 拉硅单晶包括由半透明石英玻璃层制成的坩埚基体(3)和形成在坩埚基体(3)的内壁表面上的合成石英玻璃层(4),其中包围由 石英玻璃坩埚的内表面上的棕色环在拉制硅单晶时均匀结晶。

    Quartz used in semiconductor manufacturing device, apparatus for
manufacturing the quartz, and method for manufacturing the same
    65.
    发明授权
    Quartz used in semiconductor manufacturing device, apparatus for manufacturing the quartz, and method for manufacturing the same 失效
    用于半导体制造装置的石英,石英制造装置及其制造方法

    公开(公告)号:US5881090A

    公开(公告)日:1999-03-09

    申请号:US668257

    申请日:1996-06-20

    Abstract: An inner chamber is arranged inside an outer chamber and stores quartz crystal powder. A space is defined between the inner chamber and the outer chamber, and an oxygen gas is introduced into that space. The quartz crystal powder is supplied from the inner chamber into a burner section, together with the oxygen gas. The burner section is also supplied with a flammable gas from a gas control device. The flammable gas contains an NH.sub.3 gas. The heat produced by the combustion of the flammable and oxygen gases fuses the quartz crystal powder supplied from the inner chamber into the burner section. As a result, quartz containing nitrogen is produced. The nitrogen is contained in the fused quartz in an amount which is expressed as 1 to 10% by molar ratio.

    Abstract translation: 内室设置在外室内并储存石英晶体粉末。 在内室和外室之间限定一个空间,并将氧气引入该空间。 石英晶体粉末与氧气一起从内室供应到燃烧器部分。 燃烧器部分还提供有来自气体控制装置的可燃气体。 易燃气体含有NH3气体。 由可燃性和氧气燃烧产生的热量将从内腔供应的石英晶体粉末熔化到燃烧器部分。 结果,产生含有氮的石英。 熔融石英中含有的氮以1〜10摩尔%表示。

    OPTISCHES BAUTEIL AUS QUARZGLAS ZUR VERWENDUNG IN DER ArF-EXCIMERLASER-LITHOGRAPHIE SOWIE VERFAHREN ZUR HERSTELLUNG DES BAUTEILS
    68.
    发明申请
    OPTISCHES BAUTEIL AUS QUARZGLAS ZUR VERWENDUNG IN DER ArF-EXCIMERLASER-LITHOGRAPHIE SOWIE VERFAHREN ZUR HERSTELLUNG DES BAUTEILS 审中-公开
    光学部件QUARZGLAS FOR USE IN ArF准分子激光光刻法和制造方法COMPONENT

    公开(公告)号:WO2014128148A2

    公开(公告)日:2014-08-28

    申请号:PCT/EP2014/053199

    申请日:2014-02-19

    Inventor: KUEHN, Bodo

    Abstract: Die Erfindung geht von einem optischen Bauteil aus synthetischem Quarzglas zur Verwendung in der ArF-Excimerlaser-Lithographie mit einer Einsatzwellenlänge von 193 nm aus, mit einer Glasstruktur im Wesentlichen ohne Sauerstoffdefektstellen, einem Wasserstoffgehalt im Bereich von 0,1 x 10 16 Molekülen/cm 3 bis 1,0 x 10 18 Molekülen/cm 3 und einem Gehalt an SiH-Gruppen von weniger als 2 x 10 17 Molekülen/cm 3 und mit einem Gehalt an Hydroxylgruppen im Bereich zwischen 0,1 und 100 Gew.-ppm, wobei die Glasstruktur eine fiktive Temperatur von weniger 1070 °C aufweist. Um ausgehend von einer Messung des Kompaktierungsverhaltens bei einer Messwellenlänge von 633 nm eine verlässliche Prädiktion zum Kompaktierungsverhalten beim Einsatz mit UV-Laserstrahlung der Einsatzwellenlänge ermöglicht, wird eine Ausgestaltung des optischen Bauteil vorgeschlagen, bei der es auf Bestrahlung mit Strahlung einer Wellenlänge von 193 nm mit 5x10 9 Pulsen mit einer Pulsbreite von 125 ns und einer Energiedichte von jeweils 500µJ/cm 2 sowie einer Pulswiederholfrequenz von 2000 Hz mit einer laserinduzierten Brechzahländerung reagiert, deren Betrag bei Vermessung mit der Einsatzwellenlänge von 193 nm einen ersten Messwert M 193nm und bei Vermessung mit einer Messwellenlänge von 633 nm einen zweiten Messwert M 633nm ergibt, wobei gilt: M 193nm /M 633nm

    Abstract translation:

    本发明涉及一种用于在ArF准分子激光光刻法使用与Einsatzwellenl&AUML光学合成石英玻璃构件; 193纳米的长度,具有玻璃结构基本没有氧缺陷,在的范围内的氢含量 0.1×10 16 分子导航用途LEN /厘米 3 至1.0×10 18 分子导航用途LEN /厘米 3 < / SUP>和小于2×10 17 分子导航用途的SiH基团的含量LEN /厘米 3 和与羟基基团的0.1°范围内的内容和 100重量ppm,玻璃结构的概念温度低于1070℃ 为了从Kompaktierungsverhaltens的测量在一个Messwellenl&AUML开始; 633nm的长度的VERL&AUML; ssliche镨&AUML;用语与Einsatzwellenl BEAR长度ERM&ouml的紫外激光辐射使用时压实行为; glicht,该光学装置的结构,提出了,这是对 照射具有波长&AUML辐射;焦耳/厘米 2 ,和脉冲重复的2000频率; 193nm下用5×10 9 脉冲与125毫微秒的脉冲宽度和500微的能量密度的长度 用激光诱导的折射率&AUML赫兹反应的变化,与所述Einsatzwellenl&AUML测量时的量; 193nm的第一测量值M长度<子> 193nm的和测量与Messwellenl&AUML; 633nm的第二测量值M长度<子 > 633nm,其中:M193nm / M633nm

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