公开(公告)号：GB2362503A

公开(公告)日：2001-11-21

申请号：GB0107108

申请日：2001-03-21

Applicant: LG ELECTRONICS INC

Inventor： TOMII KAORU

IPC: H01J29/04 ,  H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J3/18

Abstract: A cold cathode emission structure consists of a base electrode 102, an insulator layer 103, a gate electrode layer 104 and emission tips 105. A layer of fusible material 61 is located between the emitter tips and the base electrode. The structure is designed for use in an electron gun such as in a flat screen display device. In another embodiment the insulator layer is located between the gate and main electrodes.

公开(公告)号：CA2319395A1

公开(公告)日：1999-08-05

申请号：CA2319395

申请日：1999-01-29

Applicant: SI DIAMOND TECHN INC

Inventor： ROBINDER RONALD CHARLES ,  YANIV ZVI

IPC: H01J3/30 ,  H01J1/304 ,  H01J1/316 ,  H01J3/02 ,  H01J3/08 ,  H01J3/18 ,  H01J29/04 ,  H01J29/46 ,  H01J29/52 ,  H01J29/62 ,  H01J29/74 ,  H01J31/12 ,  H01J1/46 ,  H01J63/04 ,  H01J21/10 ,  H01J1/62

Abstract: A plurality of field emission cathodes (601) generate an emission of electrons, wherein the emission of electrons is then controlled and focused using various electrodes (602, 603, 604) to produce an electron beam. Horizontal and vertical deflection techniques (605, 606, respectively), similar to those used within a cathode ray tube, operate to scan the individual electron beams onto portions of a phosphor screen (401) in order to generate images. The use of the plurality of field emission cathodes provides for a flatter screen depth than possible with a typical cathode ray tube.

公开(公告)号：DE69407015T2

公开(公告)日：1998-03-19

申请号：DE69407015

申请日：1994-09-20

Applicant: HEWLETT PACKARD CO

Inventor： KUO HUEI-PEI

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J3/30 ,  H01J29/62 ,  H01J29/74 ,  H01J31/12 ,  H01J21/20

Abstract: Apparatus (100) and methods of focusing and to steering a group of electrons emitted from an electron source (112) to a shield (102). In a preferred embodiment, the apparatus (100) includes an electron source controlled by one or more voltages to emit electrons, a first electrode (114) adjacent to one side of the source (112), and a second electrode (108), insulated from the first electrode (114), adjacent to an opposite side of the source (112). The shield (102) has a shield voltage. The first (114) and the second (108) electrode have a first and a second voltage respectively to focus and steer a substantial portion of the emitted electrons towards the shield (102). One application of the present invention is in the area of flat panel displays with the shield (102) being a screen.

公开(公告)号：DE69116859T2

公开(公告)日：1996-06-05

申请号：DE69116859

申请日：1991-11-15

Applicant: THOMSON RECH

Inventor： PRIBAT DIDIER ,  BINH VU THIEN ,  LEGAGNEUX PIERRE

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02

Abstract: Electron source made notably in the form of a micropoint cathode electrode in which a microcathode is located in a cavity (CA) of a dielectric (3). A first gate electrode (VG1) surrounds the cavity (CA) and a second gate electrode (VG2) surrounds the first gate electrode (VG1). The different electrodes are carried to potentials such that the first gate electrode (VG1) acts as an extraction electrode and the second gate electrode acts as a focusing electrode.

公开(公告)号：DE69204629T2

公开(公告)日：1996-04-18

申请号：DE69204629

申请日：1992-11-25

Applicant: MOTOROLA INC

Inventor： KANE ROBERT C ,  PARKER NORMAN W

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J1/30

Abstract: A FED including an integrally formed electrostatic lens (37) with an aperture having a diameter which is dissimilar from an aperture of the FED gate (31) to effect a reduction in electron beam cross-section. By forming the FED with an electrostatic lens aperture of increased diameter relative to the diameter of the gate aperture a reduced sensitivity with respect to lens thickness and location is realized as is a relaxation of electrostatic lens fabrication constraints. Image display devices employing such integrally formed electrostatic lens systems may be provided wherein pixel cross-sections as small as two microns are realized.

公开(公告)号：DE69116859D1

公开(公告)日：1996-03-14

申请号：DE69116859

申请日：1991-11-15

Applicant: THOMSON RECH

Inventor： PRIBAT DIDIER ,  BINH VU THIEN ,  LEGAGNEUX PIERRE

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02

Abstract: Electron source made notably in the form of a micropoint cathode electrode in which a microcathode is located in a cavity (CA) of a dielectric (3). A first gate electrode (VG1) surrounds the cavity (CA) and a second gate electrode (VG2) surrounds the first gate electrode (VG1). The different electrodes are carried to potentials such that the first gate electrode (VG1) acts as an extraction electrode and the second gate electrode acts as a focusing electrode.

公开(公告)号：DE3854882D1

公开(公告)日：1996-02-22

申请号：DE3854882

申请日：1988-07-28

Applicant: CANON KK

Inventor： SHIMIZU AKIRA ,  SUZUKI HIDETOSHI ,  OKUNUKI MASAHIKO ,  ONO HARUHITO ,  NOMURA ICHIRO ,  BANNO YOSHIKAZU ,  TAKEDA TOSHIHIKO ,  KANEKO TETSUYA

IPC: H01J3/10 ,  H01J1/316 ,  H01J3/18 ,  H01J3/30 ,  H01J1/30

公开(公告)号：DE69204629D1

公开(公告)日：1995-10-12

申请号：DE69204629

申请日：1992-11-25

Applicant: MOTOROLA INC

Inventor： KANE ROBERT C ,  PARKER NORMAN W

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J1/30

Abstract: A FED including an integrally formed electrostatic lens (37) with an aperture having a diameter which is dissimilar from an aperture of the FED gate (31) to effect a reduction in electron beam cross-section. By forming the FED with an electrostatic lens aperture of increased diameter relative to the diameter of the gate aperture a reduced sensitivity with respect to lens thickness and location is realized as is a relaxation of electrostatic lens fabrication constraints. Image display devices employing such integrally formed electrostatic lens systems may be provided wherein pixel cross-sections as small as two microns are realized.

公开(公告)号：AU1727295A

公开(公告)日：1995-08-15

申请号：AU1727295

申请日：1995-01-30

Applicant: SILICON VIDEO CORP

Inventor： SPINDT CHRISTOPHER J ,  CORCORAN PATRICK A

IPC: H01J29/04 ,  H01J1/304 ,  H01J3/02 ,  H01J3/18 ,  H01J29/08 ,  H01J29/62 ,  H01J31/12

Abstract: A gated field-emission structure contains a emitter electrode (46), an overlying electrically insulating layer (48, and one or more electron-emissive elements (52) situated in one or more apertures extending through the insulating layer. A patterned gate electrode (50) through which each electron-emissive element is exposed overlies the insulating layer. Focusing ridges (54) are situated on the insulating layer on opposite sides of the gate electrode. The focusing ridges, which normally extend to a considerably greater height than the gate electrode, cause emitted electrons to converge into a narrow band.

公开(公告)号：FR2669465A1

公开(公告)日：1992-05-22

申请号：FR9014287

申请日：1990-11-16

Applicant: THOMSON RECH

Inventor： DIDIER PRIBAT ,  BINH VU THIEN ,  PIERRE LEGAGNEUX

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02

Abstract: An electron source is provided, particularly as a point microcathode wherein a microcathode (MP) is located in a cavity (CA) of a dielectric (3). A first gate electrode (VG1) surrounds the cavity (CA) and a second gate electrode (VG2) surrounds the first gate electrode (VG1). The various electrodes have potentials such that the first gate electrode (VG1) acts as an extraction electrode while the second gate electrode acts as a focusing electrode. Applications: field effect microcathodes.