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公开(公告)号:WO2016174545A1
公开(公告)日:2016-11-03
申请号:PCT/IB2016/052226
申请日:2016-04-20
Applicant: DH TECHNOLOGIES DEVELOPMENT PTE. LTD.
Inventor: HAGER, James Walter
CPC classification number: H01J49/38 , H01J49/08 , H01J49/4205
Abstract: A quadrupole is filled with ions and the ions are cooled by applying a pressure and gas flow within the quadrupole. Ions are trapped in the quadrupole by applying a DC voltage and an RF voltage to quadrupole rods of the quadrupole, one or more DC voltages to a plurality of auxiliary electrodes of the quadrupole, and a DC voltage and an RF voltage to an exit lens at the end of the quadrupole. The ions are coherently oscillated after the filling and cooling by applying a coherent excitation between at least two rods of the quadrupole rods. The coherently oscillating ions are axially ejected through the exit lens and to a destructive detector for detection by changing one or more voltages of the one or more DC voltages of the plurality of auxiliary electrodes and changing the DC voltage of the exit lens.
Abstract translation: 四极杆填充有离子,并通过在四极杆内施加压力和气流来冷却离子。 通过向四极杆的四极杆施加直流电压和RF电压,将一个或多个直流电压施加到四极杆的多个辅助电极,并将直流电压和射频电压施加到出射透镜 四极杆的末端。 通过在四极棒的至少两个杆之间施加相干激发,在填充和冷却之后离子相干地振荡。 通过改变多个辅助电极中的一个或多个直流电压的一个或多个电压并改变出射透镜的直流电压,相干振荡离子通过出射透镜轴向地弹出并通过一个破坏性检测器进行检测。
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公开(公告)号:JP2021507459A
公开(公告)日:2021-02-22
申请号:JP2020532775
申请日:2018-12-14
Applicant: ライプニッツ−インスティトゥート フュア フェストケルパー− ウント ヴェルクシュトフフォルシュング ドレスデン エー ファオ , Leibniz−Institut fuer Festkoerper− und Werkstoffforschung Dresden e.V.
Inventor: セルゲイ ボリセンコ
IPC: H01J49/08 , G01N23/2273 , H01J49/48
Abstract: 本発明は、物理学の分野に関連し、また物性を特定可能な運動量分解型光電子分光装置に関する。本発明の課題は、装置構成要素の簡単な構造が、格段に小さな構造容積で実現される運動量分解型光電子分光装置を示すことである。この課題は、本発明による運動量分解型光電子分光装置によって解決され、この運動量分解型光電子分光装置には、光軸の方向に相前後して、少なくとも真空中に配置されている複数の構成要素が含まれており、これらの構成要素はそれぞれ、少なくとも1つの電子放出試料および集束システムであり、この集束システムは、少なくとも1つの電子レンズと少なくとも1つの検出器とから構成されており、電子レンズは、3つの円筒形構成要素から構成されており、第1の円筒形構成要素は、電位はゼロを有し、かつ後続して配置されている2つの円筒形構成要素は、電位は非ゼロを有し、検出器は、電子レンズの焦平面に配置されている1つ以上の空間分解型検出器である。
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公开(公告)号:JPH0721953A
公开(公告)日:1995-01-24
申请号:JP16162193
申请日:1993-06-30
Applicant: HITACHI LTD
Inventor: OSHIMA TAKU , KURODA KATSUHIRO , MORI MITSUHIRO , NAKAGAWA KIYOKAZU , MISHIMA TOMOYOSHI , HIRUMA TAKEYUKI , OKAMOTO MASAKUNI , MIYAO MASANOBU
IPC: H01J1/30 , H01J1/304 , H01J37/073 , H01J49/08
Abstract: PURPOSE:To generate electron beams with narrow energy width by stacking at least pair of second material and third material in order on the surface of a first material which is a conductor, and allying negative voltage to a facing anode to them. CONSTITUTION:A barrier layer 12 and a quantum well layer 13 whose thicknesses are the penetration length or less of an electron wave are placed on the surface of a conductor needle 11, and negative voltage against a facing electrode is applied to generate electron beams. For example, the needle 11 of an n type GaAs single crystal is used as a test piece and the first material and the film 12 of an AlAs single crystal as the second material is grown at the tip of the needle 11, then the film 13 of a GaAS single crystal as the third material is grown on the film 12. They are put in a vacuum box, and the surface is cleaned by heating, then negative voltage against the facing electrode is applied to increase electrons by tunnel release. An electron beam source which releases electron beams with extremely narrow energy width is provided. Electron microscopes with high resolution and electron spectroscopes with high performance are produced.
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公开(公告)号:JPH04357656A
公开(公告)日:1992-12-10
申请号:JP18309191
申请日:1991-06-27
Applicant: TOSHIBA CORP
Inventor: YAMAZAKI YUICHIRO , MIYOSHI MOTOSUKE , OKUMURA KATSUYA
IPC: G21K5/04 , H01J37/02 , H01J37/05 , H01J37/073 , H01J37/252 , H01J37/30 , H01J37/317 , H01J49/08
Abstract: PURPOSE:To provide a low-energy radiation method and a device therefor having the capability of radiating a low-energy electron with high controllability after eliminating a high-energy component. CONSTITUTION:A primary electron beam is radiated to a secondary electron emission section 107, thereby emitting a secondary electron beam. This emitted secondary electron beam is accelerated due to a difference between voltage 120 applied to the secondary electron emission section 107 and voltage 121 applied to a takeout electrode 109, and a high-energy component A is removed through energy analyzers 110 and 111. Thereafter, the beam is decelerated and converged through decelerating electrodes 114 and 115, and low-energy electron B is radiated to a sample. As the sample, there is an electrified semiconductor wafer, active gas used for etching, or the like.
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公开(公告)号:JPH04332449A
公开(公告)日:1992-11-19
申请号:JP10121491
申请日:1991-05-07
Applicant: JEOL LTD
Inventor: SEKINE SATORU
IPC: G01N23/227 , H01J49/08 , H01J49/44
Abstract: PURPOSE:To remove influence of scattered electrons without lowering sensitivity. CONSTITUTION:The last stage electrostatic lens among electrostatic lenses 3 constituting an input lens 2 is curved at prescribed curvature. Furthermore, a deflecting system constituted of two curved electrodes 20 and 21 is arranged in the curved part. Prescribed voltage is impressed upon the respective electrostatic lenses 3 and the electrodes 20 and 21 of the deflecting system, and electrons having prescribed pass energy are set to converge into a position of an incidence slit 5. Since the electrons having energy higher than the pass energy advance in a beeline through the input lens 2 and collide with the electrode 20 of the deflecting system or its vicinity, the number of high energy electrons projected inside of HSA1 can be restricted significantly, so that generation of scattered electrons inside of the HSA1 can be also restrained.
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公开(公告)号:JPH04208883A
公开(公告)日:1992-07-30
申请号:JP34014490
申请日:1990-11-30
Applicant: FUJITSU LTD
Inventor: NAKAZAWA KAZUHIRO , ITO AKIO
IPC: G01R31/302 , H01J49/02 , H01J49/08
Abstract: PURPOSE:To improve measurement accuracy by providing a secondary reflection electrode on which a negative voltage to push back secondary electrons approaching is impressed, and preventing the effect of electric field made near an analyzing electrode by the second reflection electrode with a shield electrode. CONSTITUTION:A second reflection electrode 36 is arranged above a shield electrode 34. Then, the secondary electrons reflected by the first reflection electrode 26 and coming to the second reflection electrode 36 are reflected again at the second reflection electrode 36 and is hardly absorbed by the second reflection electrode 36. Therefore, the electrons reflected repeatedly between the first reflection electrode 26 and the second reflection electrode 36 are accelerated to the direction of a scintilator 20a, pass a circle hole 2a reducing the oscillation amplitude gradually and reach the scintilator 20a. By this, the detection rate of the secondary electron having passed an analyzing grid 18 rises in whole range of impressing voltage of the analyzing grid higher than before and thus, the measuring accuracy of electron beam tester improves.
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公开(公告)号:JPH04196040A
公开(公告)日:1992-07-15
申请号:JP32252890
申请日:1990-11-28
Applicant: TOSHIBA CORP
Inventor: YASUI SUKEYUKI , YASUOKA KOICHI , ISHII AKIRA
IPC: B23K15/00 , H01J37/067 , H01J37/077 , H01J49/08 , H01S3/09
Abstract: PURPOSE:To perform easy adjustment of the intensity of an electron beam and reduce the capacity of a power supply connected to a cathode, by constructing a cathode movable against an extracting grid. CONSTITUTION:Upon varying the intensity of an electron beam, not only by varying a voltage applied to a cathode 7 but also by moving the cathode 7 against an extracting grid 11, ionic current extracted from an ionization chamber 3 is varied. Consequently the adjustment of the intensity of the electron beam can easily be performed, so that a power source capacity can be reduced from that which is utilized by only a voltage varying operation even in the case when the same electron beam intensity is gained.
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公开(公告)号:JPH0315146A
公开(公告)日:1991-01-23
申请号:JP15200488
申请日:1988-06-20
Applicant: FUJI ELECTRIC CO LTD
Inventor: YOSHIDA YOSHITERU , TAKENAGA YUJI
Abstract: PURPOSE:To measure the approximate energy level of ionizing radiation even in an environment of a high dose of ionizing radiation and a relatively high temperature by carrying out a specific operation by using the output signals of specific plural ionization chambers so as to output a measurement signal, and measuring a representa tive energy level of the ionizing radiation field which has the ionizing radiation depending on the measurement signal. CONSTITUTION:The first ionization chamber 1 in which the output value per unit dose of radioactivity of the incident radioactive rays is distributed almost evenly to the energy level of the radioactive rays, the second ionization chamber 2 in which the output value of the radioactive rays is distributed variable simply to the energy level of the radioactive rays, and an operation unit 3 to carry out an operation by using the output signals of both ionization chambers and output a measurement signal 3a depending on the result are provided. And by the measurement signal 3a, the repre sentative energy level of the radioactive-ray field where the ionization chambers 1 and 2 are placed is measured. In this case, a radioactive-ray detector being used can be used up to about 80 deg.C in the ambient temperature, and since the output signal is a DC current, the ionization chambers 1 and 2 can be used to measure easily the radioactive rays of a high dose of radioactivity.
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公开(公告)号:JPS5871542A
公开(公告)日:1983-04-28
申请号:JP16823982
申请日:1982-09-27
Applicant: SIEMENS AG
Inventor: HANSUPEETAA FUOIERUBAUMU
IPC: G01R31/26 , G01Q30/02 , G01R31/28 , G01R31/302 , H01J37/252 , H01J49/08 , H01J49/44 , H01L21/66
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公开(公告)号:CN222734922U
公开(公告)日:2025-04-08
申请号:CN202421472343.3
申请日:2024-06-26
Applicant: 厦门新瓷材料科技有限公司
Abstract: 本实用新型公开了一种直热式热发射电子源,其包括基座、遮挡罩、发热体、以及支撑组件;所述支撑组件包括两根固定在基座上的支撑杆,支撑杆为导电耐高温材质,基座为绝缘耐高温材质;所述发热体的左右两端与两根支撑杆分别连接,发热体具有呈螺旋状的发热主体;所述遮挡罩与支撑组件的一根支撑杆相连,遮挡罩遮挡发热体的前后两侧和底侧,遮挡罩为导电耐高温材质。本实用新型的直热式热发射电子源具有发射电流大且使用稳定的有点。
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