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    Control circuit for slowly turning off a power switch
    71.
    发明公开
    Control circuit for slowly turning off a power switch 失效
    Steuerschaltung zum langsamen Abschalten eines Leistungsschalters。

    公开(公告)号：EP0624951A1

    公开(公告)日：1994-11-17

    申请号：EP93830176.9

    申请日：1993-04-26

    Applicant: CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO

    Inventor： Palara, Sergio ,  Tagliavia, Donato ,  Sueri, Stefano

    IPC: H03K17/08

    CPC classification number: H03K17/0826 ,  H03K17/166

    Abstract: A control circuit for slowly turning off a solid-state power transistor, particularly for inductive loads, comprising means (R1,R2,18) for limiting the load current flowing through the switch, and timing and control circuits (19,6,11,12,13) to ensure, irrespective of the duration of a command pulse, slowed turn-off of the switch with a predetermined delay as to the time when the maximum load current value is reached, thereby keeping the power dissipation through the switch during the load current limiting phase within predetermined values and the turn-off overvoltage within predetermined levels.

    Abstract translation: 一种用于缓慢关闭固态功率晶体管的控制电路，特别是用于感性负载，包括用于限制流过开关的负载电流的装置（R1，R2,18），以及定时和控制电路（19,6,11， 12,13），确保无论指令脉冲的持续时间如何，在达到最大负载电流值的时间以预定的延迟来减慢开关的关断，从而在期间保持功率耗散通过开关 负载电流限制相位在预定值内，关断过电压在预定电平范围内。

    BICMOS transconductor differential stage for high-frequency filters
    78.
    发明公开
    BICMOS transconductor differential stage for high-frequency filters 失效
    用于高频滤波器的BICMOS跨导差分级

    公开(公告)号：EP0810723A1

    公开(公告)日：1997-12-03

    申请号：EP96830311.5

    申请日：1996-05-31

    Applicant: SGS-THOMSON MICROELECTRONICS s.r.l. ,  CO.RI.M.ME.

    Inventor： Pisati, Valerio ,  Alini, Roberto ,  Cosentino, Gaetano ,  Vai, Gianfranco

    IPC: H03H1/00 ,  H03F3/45 ,  H03F3/72

    CPC classification number: H03F3/72 ,  H03F3/45286 ,  H03F2203/45302 ,  H03F2203/45304 ,  H03F2203/45371 ,  H03F2203/45396 ,  H03F2203/45506

    Abstract: A BiCMOS Transconductor differential stage (10) for high frequency filters comprises an input circuit portion having signal inputs (IN+,IN-) and comprising a pair of MOS transistors (M1,M2) having their respective gate terminals (G1,G2) corresponding to the signal inputs as well as an output circuit portion having signal outputs (OUT-,OUT+) and comprising a pair of two-pole transistors (Q1,Q2) connected together with a common base in a circuit node (B) and inserted between inputs (IN+,IN-) and outputs (OUT-,OUT+) in cascode configuration. The stage (10) in accordance with the present invention calls for a switching device (3) associated with at least one of said added two-pole transistors (Q1,Q2) to change the connections between the parasite capacitors present in the transconductor stage. The switching device (3) also comprises at least one added two-pole transistor (Q1x, Q2x) connected in a removable manner in parallel with the corresponding two-pole cascode transistor (Q1,Q2).
    In a variant embodiment there are also provided respective added MOS transistors (M1x,M2x) connected in parallel with the MOS transistors (M1,M2) of the input portion to change the ratio W:L of each of the input transistors (M1,M2).

    Abstract translation: 一种用于高频滤波器的BiCMOS跨导差分级（10）包括具有信号输入端（IN +，IN-）并包括一对MOS晶体管（M1，M2）的输入电路部分，所述一对MOS晶体管的各自的栅极端子（G1，G2） 信号输入端以及具有信号输出端（OUT-，OUT +）的输出电路部分，并且包括在电路节点（B）中用公共基极连接在一起的一对双极晶体管（Q1，Q2），并插入在输入端 （IN +，IN-）和输出（OUT-，OUT +）级联配置。 根据本发明的级（10）需要与所述增加的双极晶体管（Q1，Q2）中的至少一个相关联的开关器件（3）改变跨导级中存在的寄生电容器之间的连接。 开关器件（3）还包括至少一个与对应的双极共源共栅晶体管（Q1，Q2）并联连接的增加的双极晶体管（Q1x，Q2x）。 在变型实施例中，还提供了与输入部分的MOS晶体管（M1，M2）并联连接的相应增加的MOS晶体管（M1x，M2x），以改变每个输入晶体管（M1，M2）的比率W:L ）。

    High response and low consumption voltage regulator, and corresponding method
    79.
    发明公开
    High response and low consumption voltage regulator, and corresponding method 失效
    电压调节器具有快速响应时间和低的消耗和相关联的方法

    公开(公告)号：EP0810504A1

    公开(公告)日：1997-12-03

    申请号：EP96830312.3

    申请日：1996-05-31

    Applicant: CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO ,  SGS-THOMSON MICROELECTRONICS s.r.l.

    Inventor： Ursino, Riccardo ,  Gariboldi, Roberto

    IPC: G05F1/00 ,  G05F1/575

    CPC classification number: G05F1/575

    Abstract: The invention relates to a voltage regulator connected between first (VS) and second (GND) voltage references and having an output terminal (O1) for delivering a regulated output voltage (Vout), which voltage regulator comprises at least one voltage divider (11), connected between the output terminal (O1) and the second voltage reference (GND), and a serial output element (18) connected between the output terminal (O1) and the first voltage reference (VS), the voltage divider (11) being connected to the serial output element (18) by a first conduction path which includes at least one error amplifier (EA) of the regulated output voltage (Vout) whose output is connected to at least one driver (DR) for turning off the serial output element (18), the voltage regulator comprising, between the voltage divider (11) and the serial output element (18), at least a second conduction path for turning off the serial output element (18) according to the value of the regulated output voltage (Vout), in advance of the action of the first conduction path.
    The invention also concerns a method of turning off a serial output element (18) as a regulated output voltage (Vout) from a voltage regulator (10) changes.

    Abstract translation: 本发明涉及连接第一（VS）和第二（GND）电压基准并且具有输出端（O1）之间用于传递经调节的输出电压（Vout）其中电压调节器包括至少一个分压器的电压调节器（11） ，连接在输出端子（01）和所述第二电压基准（GND），和连接在输出端（O1）和第一参考电压（VS）之间的串行输出元件（18）之间，所述分压器（11）是 通过其中包括一个第一导电通路连接到所述串行输出元件（18）至少一个误差放大器中的调节的输出电压的（EA）（VOUT）的输出连接到至少一个驱动器（DR）用于关断串行输出 元件（18），电压调节器包括：在所述分压器（11）和串行输出元件（18）之间，至少用于关断串行输出元件（18）雅丁到经调节的输出的值的第二导电路径 电压（Vout）， 预先在第一导电通路的作用。因此，本发明涉及关闭串行输出元件（18），如从电压调节器（10）的变化的调节的输出电压（Vout）的方法。

    An integrated circuit with a device having a predetermined reverse conduction threshold and a thermal compensation device with Vbe multipliers
    80.
    发明公开
    An integrated circuit with a device having a predetermined reverse conduction threshold and a thermal compensation device with Vbe multipliers 失效
    一种集成电路与装置具有由Vbe的乘法器装置上的一定反向电压阈值和温度补偿装置

    公开(公告)号：EP0810503A1

    公开(公告)日：1997-12-03

    申请号：EP96830276.0

    申请日：1996-05-14

    Applicant: CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO

    Inventor： Scaccianoce, Salvatore

    IPC: G05F1/00 ,  H01L27/02 ,  H01L27/06

    CPC classification number: H01L27/0211 ,  H01L27/0652

    Abstract: A monolithic, integrated semiconductor circuit comprising a high-voltage device (210) with a predetermined reverse-conduction threshold, typically a chain of Zener diodes (220-240) has, connected in series therewith, a thermal compensation device (250) constituted by a plurality of Vbe multipliers connected in series with one another. Each of the Vbe multipliers is formed by a resistive divider (R1i, R2i) and a low-voltage transistor (Ti) or two or more low-voltage transistors in a Darlington configuration.

    Abstract translation: 一种单片集成半导体电路包括高电压设备（210）与预定的反向导通的阈值，典型地，齐纳二极管的链（220-240）已经串联连接有与，由构成热补偿装置（250） 串联连接彼此的Vbe乘法器的复数。 Vbe的乘法器中的每一个由一个电阻分压器（R 1I，R 2I）和一个低电压晶体管（Ti）的或两种或更多种低电压晶体管在达林顿结构​​形成。

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