Abstract:
In a communication semiconductor integrated circuit device, an oscillator (VCO 10) of a PLL circuit can operate in a plurality of frequency bands. With a control voltage (Vc) of the oscillator fixed to a predetermined value (VDC), an oscillation frequency of the oscillator is measured for each band to be stored in a storage (18). When the PLL operates, a setting value to specify a band is compared with the measured frequency values stored in the storage. As a result of the comparison, a band to be actually used by the oscillator is determined.
Abstract:
In a memory card with a newly-added module for performing data communication, data communication is stably performed without receiving a noise effect. As an embodiment of the present invention, a memory card (100) has a thin-plate-shaped holding member (20), a memory section (24) provided as buried in the holding member (20), plural first connection pieces 2-10 connected to the memory section (24), a data communication section (26) provided as buried in the holding member (20), and two connection pieces(11, 12) connected to the data communication section (26). The two second connection pieces (11, 12) are disposed at the end of a row part R1 on which only the plural first connection pieces(2-10)are aligned. One first connection piece (10) positioned at the end of the row part R1 is a ground terminal. That is to say, in the plural first connection pieces (2-10), the first connection piece (10) adjacent to the second connection piece (11) is a ground terminal.
Abstract:
A method of designing a charged particle beam mask, comprises locating a plurality of identical chip patterns on a charged particle beam mask in which a plurality of subfields that can be transferred at a time are provided vertically and horizontally. The chip patterns have an arrangement pitch that is an integer multiple of the subfield.
Abstract:
A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing) (202). This cycle of steps is repeated to form a high dielectric constant film.
Abstract:
The dynamic range is changed by switching a current applied to an amplifying circuit to obtain the minimum ICP required to keep linearity with the number of multiplexes even when the number of multiplexes of data is changed by switching the operation current of the amplifying circuits of the transmission system and also supplying the information about number of multiplexes of data to be transmitted to the amplifying circuits of the transmission system from the baseband circuit. Thereby, the signal can be transmitted without distortion even when the number of multiplexes increases and the current of the amplifying circuit may be reduced when the number of multiplexes is small in order to reduce the current consumption in the communication semiconductor integrated circuit device which can form a wireless communication system of the code division multiplex system such as W-CDMA system.
Abstract:
A multi-function structure of a plug-in universal IC card is to be promoted and the manufacturing cost is to be reduced. A body of the plug-in UICC is constructed of a molding resin. A tape substrate and a chip mounted on one side of the tape substrate are sealed in the interior of the molding resin. An opposite side (opposite to the chip mounting side) of the tape substrate is exposed to the exterior of the molding resin and constitutes a surface portion of the plug-in UICC. Contact patterns as external terminals of the plug-in UICC are formed on the surface of the tape substrate exposed to the exterior of the molding resin. In the plug-in UICC whose body is constructed of the molding resin, cracking of the chip can be prevented effectively even in the case where the chip is large-sized.
Abstract:
An integrated semiconductor device containing semiconductor elements that have respective desired on-resistances and breakdown voltages achieves appropriate characteristics as a whole of the integrated semiconductor element. The integrated semiconductor device (50) includes a plurality of semiconductor elements (50a, 50b, 50c) formed in a semiconductor layer and each having a source (6) of an n type semiconductor, a drain (3) of the n type semiconductor and a back gate (5) of a p type semiconductor between the source and the drain. At least a predetermined part of the drain of one semiconductor element and a predetermined part of the drain of another semiconductor element have respective impurity concentrations different from each other.
Abstract:
It is an object of the invention to improve security of a storage apparatus. The invention has: a flash memory chip; an IC card chip which can execute a security process (encryption, decryption, etc.); and a controller chip for controlling read/write of data from/into the flash memory chip and the IC card chip in response to a request from a host.
Abstract:
A card tray to be mounted to a memory card can make the memory card mountable in a card slot for memory cards conforming to standards different from those to which the memory card conforms. The card tray has a main body and a recessed mount section. The recessed mount section is formed such that the holder of a second memory card can be mounted to one of the major surfaces of the main body. A memory-card-mounted body is produced when the second memory card is mounted to the recessed mount section. The card tray is configured such that, when the first memory card is placed on the memory-card-mounted body with the left and right edges thereof aligned with each other, the contact pieces of the first memory card and the contact pieces of the second memory card have longitudinally overlapping parts and transversally overlapping parts as viewed from above.