Abstract:
A method of fabricating a tungsten contact in a semiconductor device, the method including the steps of: (a) providing a silicon wafer structure including a dielectric layer and an underlying layer selected from a semiconductor or electrically conductive material, the dielectric layer being patterned to expose a contact portion of the underlying layer; and (b) depositing by chemical vapour deposition a tungsten layer over the dielectric layer and the contact portion, the deposition being carried out by reaction of a tungsten- containing component and a reducing agent which are introduced into the vicinity of the silicon wafer structure, the deposition step having a first phase in which the process conditions are controlled to form a seed layer of tungsten on the dielectric layer and a second phase in which the process conditions are modified from the first phase to form a blanket tungsten layer over the seed layer which acts as an adhesion layer between the dielectric layer and the blanket tungsten layer. The invention also provides a semiconductor device incorporating a tungsten contact which is disposed in a contact hole of a dielectric layer, the tungsten contact including a seed layer of tungsten which extends over the dielectric layer surface and an overlying layer of blanket tungsten.
Abstract:
A method of demodulating an FM carrier wave and an FM demodulation circuit are described which use a phase locked loop. The phase locked loop is tuned to a selected carrier wave frequency including the step of selecting a setting of the variable gain circuit in the phase locked loop to select a desired loop gain.
Abstract:
An encoding scheme relies on a d.c. balanced code wherein each message to be transmitted is sent as a plurality of symbols, each symbol having six bits, three ones and three zeros. Out of the twenty combinations of balanced six-bit codes, two codes are reserved to operate as control tokens, being 010101 and 101010. Because of the particular format of the symbols, control tokens can be easily detected. Furthermore, they can be combined in longer bit sequences for use as initialisation and disconnect sequences.
Abstract:
Computer appratus includes an instruction execution unit (13) having a plurality of functional units (14,16) each arranged to execute at least part of an instruction and instruction issuing circuitry (10,12) for issuing simultaneously a group of separate compatible instructions to the execution unit (13) the circuitry (12) having means for classifying each instruction in dependence on the or each functional unit required for execution of that instruction and means for testing the classification of successive instructions and selecting a group which according to their classification are compatible for simultaneous issue to the execution unit (13) without conflicting demands on any function unit (14,16) in the execution unit.
Abstract:
A switching circuit for an FET transistor includes a controlled current circuit coupled to the gate of the FET. The input (36) to the controlled current circuit represents a desired rate of change of gate voltage of the FET and is generated by a circuit responsive to the average specific transconductance of two FETs (41,42) of similar specific transconductance operating at different drain current densities. Circuitry (51,52) is responsive to different gate voltages of the transistors (41,42) at the respective drain current densities to operate the signal (36).
Abstract:
Apparatus for filtering ghost signals from a video signal sequence comprises storage circuitry (14) for storing a representation of the reference signal, input circuitry (16) for inputting video signals from the video signal sequence, comparison circuitry (12) for comparing the stored representation of the reference signal with the reference signal received in the video signal sequence at said input circuitry thereby to detect ghosts, filter coefficient generating circuitry connected to said comparison circuitry to generate a frequency domain representation of filter coefficients dependent on ghost signals detected, a forward fourier transform pipeline (22) connected to said input circuitry (16) to form a frequency domain representation of data in the video signal sequence received by said input circuitry, product forming circuitry (35) for forming in the frequency domain a product of the filter coefficients with the frequency domain representation of the data in the video signal sequence, and an inverse fourier transform pipeline (45) connected to said product forming circuitry (35) for receiving said product and transforming it to provide an output in the time domain representing said video signal sequence from which detected ghost signals have been removed.
Abstract:
A method of fabricating a semiconductor device incorporating a via and an interconnect layer of aluminium or aluminium alloy, the method comprising the steps of: (a) providing a silicon wafer structure; (b) forming an interconnect layer (2) of aluminium or aluminium alloy on the structure; (c) forming a capping layer (12) over the interconnect layer, the capping layer being composed of electrically conductive material; (d) forming a dielectric layer (14) on the capping layer; and (e) selectively depositing an electrically conductive contact (18) on the capping layer in a contact hole (16) of the dielectric layer thereby to form a via, the materials of the capping layer (12) and of the contact (18) being selected whereby after the contact has been deposited on the capping layer at the interface therebetween there is substantial absence of non-conductive compounds formed from the material of the capping layer. The invention also provides a semiconductor device including a via and an interconnect layer of aluminium or aluminium alloy, a capping layer of electrically conductive material which has been formed over the interconnect layer and an electrically conductive contact which has been selectively deposited on the capping layer thereby to form a via, the materials of the capping layer and of the contact being selected whereby at the interface therebetween there is substantial absence of non-conductive compounds formed from the material of the capping layer.
Abstract:
The oscillator comprises a plurality of differential amplication stages (10,12,14,16) each arranged to introduce a phase shift between its differential input signal and its differential output signal such that the total phase shift introduced by the stages is 360 o . In this way an oscillating signal is produced at the output of each stage. Because each stage receives and supplies difference signals, any changes in the power supply of the stages affect both inputs or outputs in the same way so that the effect on the differential signal is minimal. The circuit thus provides a reduction of the effect of power supply noise. The oscillator may be used for instance in a N-PLL-circuit.
Abstract:
The oscillator comprises a plurality of differential amplication stages (10,12,14,16) each arranged to introduce a phase shift between its differential input signal and its differential output signal such that the total phase shift introduced by the stages is 360 o . In this way an oscillating signal is produced at the output of each stage. Because each stage receives and supplies difference signals, any changes in the power supply of the stages affect both inputs or outputs in the same way so that the effect on the differential signal is minimal. The circuit thus provides a reduction of the effect of power supply noise. The oscillator may be used for instance in a N-PLL-circuit.
Abstract:
A line delay device comprises a memory having RAM cells in two blocks (14,15), each cell being connected to a pair of bit lines. Memory locations in one block (14) are addressed sequentially and subject to a data transfer while an equate operation is effected on the bit lines of the other block (15). The operations are switched alternately between the two blocks (14,15). In each accessing cycle a plurality of locations are addressed in selected rows of each block (14,15) and the switching between each block is effected without addressing all locations in each row addressed so that the accessing cycle ends in a different block (15) from the starting block (14) and each row used has a plurality of addressed locations.