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    SEMICONDUCTOR DEVICES CONTAINING NITRIDED HIGH DIELECTRIC CONSTANT FILMS AND METHOD OF FORMING
    71.
    发明申请
    SEMICONDUCTOR DEVICES CONTAINING NITRIDED HIGH DIELECTRIC CONSTANT FILMS AND METHOD OF FORMING 审中-公开
    含有高介电常数膜的半导体器件及其形成方法

    公开(公告)号：WO2008042695A2

    公开(公告)日：2008-04-10

    申请号：PCT/US2007/079681

    申请日：2007-09-27

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  CLARK, Robert, D.

    Inventor： CLARK, Robert, D.

    CPC classification number: H01L21/3142 ,  C23C16/308 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45542 ,  H01L21/28202 ,  H01L21/3145 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/945

    Abstract: A semiconductor device containing a substrate (25, 92) and a nitrided high-k film (96) on the substrate (25, 92), and method of forming a nitrided high-k film (96). The nitrided high-k film (96) contains an oxygen-containing film and a nitrogen- containing film that is oxidized through at least a portion of the thickness thereof. The nitrogen-containing film and the oxygen-containing film contain the same one or more metal elements selected from alkaline earth elements, rare earth elements, and Group IVB elements of the Periodic Table. The nitrided high-k film (96) can optionally further contain aluminum, siiicon, or aluminum and silicon. The nitrided high-k film (96) is formed on the substrate (25, 92) by a) depositing a nitrogen-containing film, and b) depositing an oxygen-containing film, wherein steps a) and b) are performed in any order, any number of times, so as to oxidize at least a portion of the thickness of the nitrogen-containing film. According to one embodiment, the method includes forming a nitrided hafnium based high-k film (96).

    Abstract translation: 在衬底（25,92）上含有衬底（25,92）和氮化高k膜（96）的半导体器件，以及形成氮化高k膜（96）的方法。 氮化高k膜（96）含有含氧膜和通过其厚度的至少一部分被氧化的含氮膜。 含氮膜和含氧膜含有相同的一种或多种选自碱土金属元素，稀土元素和元素周期表IVB族元素的金属元素。 氮化高k膜（96）可以任选地进一步包含铝，硅或铝和硅。 氮化的高k膜（96）通过a）沉积含氮膜而形成在基板（25,92）上，b）沉积含氧膜，其中步骤a）和b）以任何方式进行 任意次数，以便氧化至少一部分含氮膜的厚度。 根据一个实施方案，该方法包括形成氮化铪基高k膜（96）。

    METHOD FOR INTEGRATING A CONFORMAL RUTHENIUM LAYER INTO COPPER METALLIZATION OF HIGH ASPECT RATIO FEATURES
    72.
    发明申请
    METHOD FOR INTEGRATING A CONFORMAL RUTHENIUM LAYER INTO COPPER METALLIZATION OF HIGH ASPECT RATIO FEATURES 审中-公开
    将一致的RUMENIUM层合并成高比例特征的铜金属化的方法

    公开(公告)号：WO2007117802A8

    公开(公告)日：2008-03-06

    申请号：PCT/US2007063570

    申请日：2007-03-08

    Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  SUZUKI KENJI

    Inventor： SUZUKI KENJI

    IPC: H01L21/768

    CPC classification number: H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76873 ,  H01L2221/1089

    Abstract: A method of integrated processing of a patterned substrate (400, 600) for copper metallization. The method includes providing the patterned substrate (400, 600) containing a via (426, 626) and a trench (424, 624) in a vacuum processing tool (300), and performing an integrated process on the patterned substrate (400, 600) in the vacuum processing tool (300) by depositing a first metal-containing layer (428, 628) over the patterned substrate (400, 600), removing by sputter etching the first metal-containing layer (428, 628) from the bottom (426b, 626b) of the via (426, 626) and at least partially removing the first metal-containing layer (428, 628) from the bottom (424b, 624b) of the trench (424,624), depositing a conformal Ru layer (432, 632) onto the sputter etched first metal-containing layer (428a, 628a), depositing a non-conformal Cu layer (434,634) on the conformal Ru layer (432), and plating Cu (436, 636) over the patterned substrate (400, 600). According to one embodiment of the invention, the method can further include depositing a second metal-containing layer (430) onto the sputter etched first metal-containing layer (428a) prior to depositing the conformal Ru layer (432).

    Abstract translation: 一种用于铜金属化的图案化衬底（400,600）的集成处理方法。 该方法包括在真空处理工具（300）中提供包含通孔（426,626）和沟槽（424,624）的图案化衬底（400,600），并且在图案化衬底（400,600）上执行集成处理 ）通过在图案化的衬底（400,600）上沉积第一含金属层（428,628），通过从底部溅射蚀刻第一含金属层（428,628）而去除真空处理工具（300） （426,626）的至少一部分（426b，626b），并且从沟槽（424,624）的底部（424b，624b）至少部分去除第一含金属层（428,628），沉积共形Ru层（ 在所述溅射蚀刻的第一含金属层（428a，628a）上沉积在所述共形Ru层（432）上沉积非共形Cu层（434,634）并在所述图案化衬底上镀覆Cu（436,636） （400,600）。 根据本发明的一个实施例，所述方法还可以包括在沉积所述共形Ru层（432）之前，在溅射蚀刻的第一含金属层（428a）上沉积第二含金属层（430）。

    METHOD FOR PURIFYING METAL CARBONYL PRECURSORS
    73.
    发明申请
    METHOD FOR PURIFYING METAL CARBONYL PRECURSORS 审中-公开
    用于净化金属碳前驱体的方法

    公开(公告)号：WO2007112394A3

    公开(公告)日：2008-02-07

    申请号：PCT/US2007065028

    申请日：2007-03-27

    Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  SUZUKI KENJI

    Inventor： SUZUKI KENJI

    IPC: B01D7/00 ,  C23C16/16 ,  C23C16/448

    CPC classification number: C23C16/4402 ,  C23C16/16 ,  C23C16/4481

    Abstract: A method and integrated system (100) are provided for purifying and delivering a metal carbonyl precursor (114) utilized to process a substrate. The method includes providing the metal carbonyl precursor (114) containing un-reacted metal carbonyl precursor and metal-containing impurities in a metal precursor vaporization chamber (110) containing a precursor collection plate (120, 130), evacuating the metal precursor vaporization chamber (110), pressurizing the metal precursor vaporization chamber (110) with a CO-containing gas, vaporizing the un-reacted metal carbonyl precursor, and condensing the vaporized un-reacted metal carbonyl precursor as a purified metal carbonyl precursor (120a, 130a) on the precursor collection plate (120, 130). The method may further include vaporizing the purified metal carbonyl precursor (120a, 130a), and delivering a process gas containing the vapor of the purified metal carbonyi precursor (120a, 130a) by flowing a gas containing CO through the metai precursor vaporization chamber (110) to a deposition system (150) configured to expose a substrate to the process gas.

    Abstract translation: 提供了一种方法和集成系统（100），用于净化和输送用于处理基底的金属羰基前体（114）。 该方法包括在含有前体收集板（120,130）的金属前体蒸发室（110）中提供含有未反应的金属羰基前体和含金属杂质的金属羰基前体（114），将金属前体蒸发室 110），用含CO气体对金属前体蒸发室（110）加压，蒸发未反应的金属羰基前体，并将蒸发的未反应的金属羰基前体作为纯化的金属羰基前体（120a，130a）冷凝在 前体收集板（120,130）。 该方法可以进一步包括蒸发纯化的金属羰基前体（120a，130a），并且通过使包含CO的气体流过ai前体蒸发室（110）而输送含有纯化的金属碳原子前体（120a，130a）的蒸气的工艺气体 ）到沉积系统（150），其被配置为将衬底暴露于工艺气体。

    METHOD OF MONITORING A SEMICONDUCTOR PROCESSING SYSTEM USING A WIRELESS SENSOR NETWORK
    75.
    发明申请
    METHOD OF MONITORING A SEMICONDUCTOR PROCESSING SYSTEM USING A WIRELESS SENSOR NETWORK 审中-公开
    使用无线传感器网络监测半导体处理系统的方法

    公开(公告)号：WO2007112181A2

    公开(公告)日：2007-10-04

    申请号：PCT/US2007063466

    申请日：2007-03-07

    Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  KAUSHAL SANJEEV ,  SUGISHIMA KENJI ,  RAO DONTHINENI RAMESH KUMAR

    Inventor： KAUSHAL SANJEEV ,  SUGISHIMA KENJI ,  RAO DONTHINENI RAMESH KUMAR

    IPC: H01L21/00

    CPC classification number: H01L21/67253

    Abstract: A method and system for non-invasive sensing and monitoring of a processing system (100, 200) employed in semiconductor manufacturing. The method allows for detecting and diagnosing drift and failures in the processing system (100, 200) and taking the appropriate correcting measures. The method includes positioning at least one non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906) on an outer surface of a system component of the processing system (200), where the at least one non- invasive sensor forms a wireless sensor network (902), acquiring a sensor signal from the at least one non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906), where the sensor signal tracks a gradual or abrupt change in a processing state of the system component during flow of a process gas in contact with the system component, and extracting the sensor signal from the wireless sensor network (902) to store and process the sensor signal. In one embodiment, the non-invasive sensor (247a-d, 248a-b, 249a-b, 250a-c, 906) can be an accelerometer sensor and the wireless sensor network (902) can be motes-based.

    Abstract translation: 一种用于在半导体制造中使用的处理系统（100,200）的无创感测和监测的方法和系统。 该方法允许检测和诊断处理系统（100,200）中的漂移和故障并采取适当的校正措施。 该方法包括将至少一个非侵入式传感器（247a-d，248a-b，249a-b，250a-c，906）定位在处理系统（200）的系统部件的外表面上，其中至少 一个非侵入式传感器形成无线传感器网络（902），从所述至少一个非侵入式传感器（247a-d，248a-b，249a-b，250a-c，906）获取传感器信号，其中所述传感器 信号跟踪在与系统部件接触的过程气体流动期间系统部件的处理状态中的逐渐或突然的变化，并且从无线传感器网络（902）提取传感器信号以存储和处理传感器信号。 在一个实施例中，非侵入式传感器（247a-d，248a-b，249a-b，250a-c，906）可以是加速计传感器并且无线传感器网络（902）可以是基于微粒的。

    METHOD FOR CONTROLLING THE STEP COVERAGE
    76.
    发明申请
    METHOD FOR CONTROLLING THE STEP COVERAGE 审中-公开
    用于控制步骤覆盖的方法

    公开(公告)号：WO2007040701A3

    公开(公告)日：2007-06-07

    申请号：PCT/US2006026225

    申请日：2006-07-06

    Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  SUZUKI KENJI

    Inventor： SUZUKI KENJI

    IPC: C23C16/16 ,  C23C16/04

    CPC classification number: C23C16/16 ,  C23C16/045 ,  H01L21/28556 ,  H01L21/76846

    Abstract: A method (300) for forming a Ru layer (560, 560', 561 , 580) for an integrated circuit by providing a patterned substrate (500, 504) in a process chamber (10, 110), and exposing the substrate (25, 125, 500, 504) to a process gas comprising a ruthenium carbonyl precursor and a CO gas to form a Ru layer (560, 560', 561 , 580) over a feature (530, 532, 533) of the patterned substrate (500, 504). In one embodiment, the CO partial pressure in the process chamber (10, 110) is varied during the exposing to control the step coverage of the Ru layer (560, 560', 561 , 580) over the feature (530, 532, 533). In an alternative or further embodiment, the step coverage can be controlled by varying the substrate temperature during the exposure.

    Abstract translation: 一种用于通过在处理室（10,110）中提供图案化衬底（500,504）形成用于集成电路的Ru层（560,560'，561,580）的方法（300），并且使衬底 ，125,500,450）连接到包含羰基钌前驱体和CO气体的工艺气体，以在所述图案化衬底的特征（530,532,533）上形成Ru层（560,560'，561,580） 500，504）。 在一个实施例中，处理室（10,110）中的CO分压在曝光期间变化以控制在特征（530,532,533）上的Ru层（560,560'，561,580）的台阶覆盖 ）。 在替代或进一步的实施例中，可以通过在曝光期间改变衬底温度来控制台阶覆盖。

    BUILT-IN SELF TEST FOR A THERMAL PROCESSING SYSTEM
    79.
    发明申请
    BUILT-IN SELF TEST FOR A THERMAL PROCESSING SYSTEM 审中-公开
    用于热处理系统的内置自检

    公开(公告)号：WO2007030193A1

    公开(公告)日：2007-03-15

    申请号：PCT/US2006/026128

    申请日：2006-07-06

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji

    Inventor： KAUSHAL, Sanjeev ,  PANDEY, Pradeep ,  SUGISHIMA, Kenji

    IPC: G05B19/418 ,  G05B23/02

    CPC classification number: H01L22/10 ,  G05B19/41875 ,  G05B23/0254 ,  H01L21/67248 ,  Y02P90/22

    Abstract: A method of creating and/or modifying a built-in self test (BIST) table for monitoring a thermal processing system (100, 200) in real-time that includes positioning a plurality of wafers (W) in a processing chamber (202) in the thermal processing system (100, 200); executing a real-time dynamic model (330) to generate a predicted dynamic process response; creating a measured dynamic process response; determining a dynamic estimation error; determining if the determined dynamic estimation error can be associated with a pre-existing BIST rule in the BIST table; creating a new BIST rule when the dynamic estimation error cannot be associated with any pre-existing BIST rule in the BIST table; and stopping the process when a new BIST rule cannot be created.

    Abstract translation: 一种创建和/或修改内置自检（BIST）表的方法，用于实时监控热处理系统（100,200），包括将多个晶片（W）定位在处理室（202）中， 在热处理系统（100,200）中; 执行实时动态模型（330）以产生预测的动态过程响应; 创建一个测量的动态过程响应; 确定动态估计误差; 确定所确定的动态估计误差是否可以与BIST表中的预先存在的BIST规则相关联; 当动态估计错误不能与BIST表中的任何预先存在的BIST规则相关联时，创建新的BIST规则; 并在无法创建新的BIST规则时停止该进程。

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