公开(公告)号：KR1020130108858A

公开(公告)日：2013-10-07

申请号：KR1020120030654

申请日：2012-03-26

Applicant: 삼성전자주식회사 ,  서강대학교산학협력단

Inventor： 김영 ,  박재철 ,  윤대건 ,  이채훈 ,  범진욱 ,  김경훈 ,  이준안

IPC: A61B6/03 ,  G01T1/208

CPC classification number: G01J1/44 ,  G01T1/2006 ,  G01T1/2018 ,  G01T1/208

Abstract: PURPOSE: A digital silicon photomultiplier detector cell improves energy resolution by counting radiation at the outside in real time regardless of memory capacity and measuring the amount of the radiation. CONSTITUTION: A scintillator (110) generates light by receiving radiation. A detector unit (130) generates a digitalized detection signal by receiving light of a wavelength in a specific range. The detector unit includes a photodiode and an active reset part connected to the cathode of the photodiode. A read-out unit (150) transmits a generated output signal corresponding to the detection signal generated in the detector signal to an external circuit. The read-out unit does not store the detection signal within a detector cell.

Abstract translation: 目的：数字硅光电倍增管检测器通过实时计数外部的辐射来提高能量分辨率，无论存储容量如何，并测量辐射量。 构成：闪烁体（110）通过接收辐射产生光。 检测器单元（130）通过接收特定范围内的波长的光产生数字化检测信号。 检测器单元包括光电二极管和连接到光电二极管的阴极的有源复位部分。 读出单元（150）将与检测器信号中生成的检测信号相对应的生成的输出信号发送到外部电路。 读出单元不将检测信号存储在检测器单元内。

公开(公告)号：KR1020130107120A

公开(公告)日：2013-10-01

申请号：KR1020120028961

申请日：2012-03-21

Applicant: 삼성전자주식회사 ,  삼성디스플레이 주식회사

Inventor： 김선일 ,  박재철 ,  김창정

IPC: H01B1/20 ,  H01L31/09 ,  A61B6/12 ,  G01T1/15

Abstract: PURPOSE: A paste is provides a radiation detector with excellent performance and a photoelectric conversion layer with excellent sensitivity and low dark current characteristics. CONSTITUTION: A paste includes a photoelectric conducting material (10); a binder which has a polymerization degree of 600-1100; and a solvent (30) dissolving the binder. The photoconductive material includes at least one selected from HgI2, PbI2, PbO, TlBr, CdTe, CdZnTe, CdS, and BiI3. The content of the binder is 1-50 parts by weight based on 100.0 parts by weight of the photoconductive material. A manufacturing method of the photoelectric conversion layer comprises a step of spreading the paste on a substrate; and a step of obtaining the photoelectric conversion layer by heat-treating the paste. [Reference numerals] (10) Photoconductive material; (20) Binder (600-1100 polymerization degree); (30) Solvent; (40) Addition agent

Abstract translation: 目的：一种糊状物提供具有优异性能的辐射检测器和具有优异灵敏度和低暗电流特性的光电转换层。 构成：糊状物包括光电导电材料（10）; 聚合度为600-1100的粘合剂; 和溶解粘合剂的溶剂（30）。 光电导材料包括选自HgI2，PbI2，PbO，TlBr，CdTe，CdZnTe，CdS和BiI3中的至少一种。 基于100.0重量份的光电导材料，粘合剂的含量为1-50重量份。 光电转换层的制造方法包括将浆料涂布在基板上的工序; 以及通过对该糊进行热处理来获得光电转换层的步骤。 （附图标记）（10）光导材料; （20）粘合剂（聚合度600-1100）; （30）溶剂; （40）添加剂

公开(公告)号：KR1020130076431A

公开(公告)日：2013-07-08

申请号：KR1020110145018

申请日：2011-12-28

Applicant: 삼성전자주식회사

Inventor： 김선일 ,  박재철 ,  김상욱 ,  김창정

IPC: G01N23/04 ,  G01T1/24 ,  H01L27/14

CPC classification number: G01T1/16 ,  G01T1/243 ,  H01L27/14676 ,  H01L31/035281 ,  H01L31/119 ,  H01L31/18 ,  Y02E10/50

Abstract: PURPOSE: A multi-energy radiation detector and a manufacturing method thereof are provided to form the thickness of two regions of a photoelectric conversion layer differently, thereby detecting radiation of different energy bands. CONSTITUTION: A multi-energy radiation detector (10) includes an array substrate (20) and a photoelectric conversion layer (30). The array substrate includes a plurality of unit circuits. The photoelectric conversion layer is arranged on the array substrate and includes two regions with different thicknesses. The photoelectric conversion layer includes a first region of which the thickness is relatively thin and a second region of which the thickness is relatively thick.

Abstract translation: 目的：提供多能量辐射检测器及其制造方法以形成光电转换层的两个区域的厚度，从而检测不同能带的辐射。 构成：多能量辐射检测器（10）包括阵列基板（20）和光电转换层（30）。 阵列基板包括多个单元电路。 光电转换层配置在阵列基板上，具有不同厚度的两个区域。 光电转换层包括厚度相对较薄的第一区域和厚度相对较厚的第二区域。

公开(公告)号：KR1020130046246A

公开(公告)日：2013-05-07

申请号：KR1020110110717

申请日：2011-10-27

Applicant: 삼성전자주식회사 ,  인제대학교 산학협력단

Inventor： 김선일 ,  남상희 ,  김창정 ,  박재철 ,  김상욱

IPC: H01B1/22 ,  H01L31/04 ,  H01L31/115

CPC classification number: Y02E10/50 ,  H01B1/22 ,  H01L31/04 ,  H01L31/115

Abstract: PURPOSE: A paste is provided to manufacture a photoelectric conversion layer with excellent properties, to obtain a high sensitive photoelectric conversion layer, and to obtain a radiation detector which has excellent performance. CONSTITUTION: A paste comprises photoconductive powder(10); a binder(20) which has adhesion by being mixed with the photoconductive powder; and a solvent which dissolves the solvent and provides fluidity. 80% or more of the photoconductive powder has a size of 2-30 micron. The 80% or more of the photoconductive powder has a size of 5-20 micron. The content of the binder in the mixture of the photoconductive powder and the binder is 2.5-12 wt%. The photoconductive conversion layer contains photoconductive powder and a binder having adhesion by being mixed with the photoconductive powder. [Reference numerals] (10) Photoconductive powder(2-30um); (20) Binder; (30) Solvent

Abstract translation: 目的：制造具有优异性能的光电转换层，以获得高灵敏度的光电转换层，并获得具有优异性能的放射线检测器。 构成：糊状物包含光导粉（10）; 粘合剂（20），其通过与光电导粉末混合而具有粘合性; 以及溶解溶剂并提供流动性的溶剂。 80％以上的光电导粉末的尺寸为2-30微米。 80％以上的光电导粉末的尺寸为5-20微米。 光导电粉末和粘合剂的混合物中的粘合剂的含量为2.5-12重量％。 光电导转换层含有通过与光电导粉末混合的光导电粉末和具有粘合剂的粘合剂。 （附图标记）（10）导电粉末（2-30um）; （20）粘合剂; （30）溶剂

公开(公告)号：KR1020120139078A

公开(公告)日：2012-12-27

申请号：KR1020110058639

申请日：2011-06-16

Applicant: 삼성전자주식회사 ,  삼성디스플레이 주식회사

Inventor： 박재철 ,  김영 ,  김창정

IPC: A61B6/03 ,  G01T1/161 ,  H01L31/101

CPC classification number: H01L27/14609 ,  A61B6/037 ,  G01T1/2006 ,  G01T1/2018 ,  G01T1/208 ,  H01L27/14618 ,  H01L27/14663 ,  H01L2924/0002 ,  H04N5/3698 ,  H01L2924/00

Abstract: PURPOSE: A pixel device, a radiation detecting module and an apparatus having the same are provided to maintain regularly the breakdown voltage of a photo diode and to improve energy resolution. CONSTITUTION: A voltage feeding unit(20) supplies voltage to a photo diode. The voltage feeding unit comprises a voltage storing unit(30) and a voltage regulating unit(40). A voltage storing unit is connected to the anode and stores a first anode voltage. The voltage regulating unit controls a second anode voltage to be same as the first anode voltage. The voltage storing unit includes a capacitor. [Reference numerals] (20) Voltage feeding unit; (30) Voltage storing unit; (40) Voltage regulating unit(closed loop); (50) Sensing unit; (60) Quenching unit; (70) Leadout unit; (AA) PC; (BB) PCb; (CC) SW2; (DD) Sw1

Abstract translation: 目的：提供像素装置，辐射检测模块和具有该像素装置的装置，以便有规律地保持光电二极管的击穿电压并提高能量分辨率。 构成：电压馈送单元（20）向光电二极管提供电压。 电压馈送单元包括电压存储单元（30）和电压调节单元（40）。 电压存储单元连接到阳极并存储第一阳极电压。 电压调节单元控制第二阳极电压与第一阳极电压相同。 电压存储单元包括电容器。 （附图标记）（20）供电单元; （30）电压存储单元; （40）电压调节单元（闭环）; （50）感应单元; （60）淬火单元; （70）出口单位; （AA）PC; （BB）PCb; （CC）SW2; （DD）Sw1

公开(公告)号：KR1020110083934A

公开(公告)日：2011-07-21

申请号：KR1020100003927

申请日：2010-01-15

Applicant: 삼성전자주식회사

Inventor： 김선일 ,  박재철 ,  김상욱 ,  박영수 ,  김창정

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L27/1214

Abstract: PURPOSE: A transistor, a manufacturing method thereof, and an electronic device including the same are provided to suppress the property variation of a transistor due to light and moisture by including a second passivation layer including fluorine. CONSTITUTION: A source(S1) and a drain(D1) are connected to both ends of a channel layer(C1). A gate(G1) corresponds to the channel layer. A gate insulation layer(Gl1) is formed between the channel layer and the gate. A first passivation layer(P11,P12) covers the source, the drain, the gate, and the gate insulation layer, and the channel layer. The second passivation layer is formed on the first passivation layer and includes fluorine.

Abstract translation: 目的：提供晶体管及其制造方法以及包括该晶体管的电子器件，以通过包括含氟的第二钝化层来抑制由于光和水分导致的晶体管的特性变化。 构成：源极（S1）和漏极（D1）连接到沟道层（C1）的两端。 栅极（G1）对应于沟道层。 在沟道层和栅极之间形成栅极绝缘层（Gl1）。 第一钝化层（P11，P12）覆盖源极，漏极，栅极和栅极绝缘层以及沟道层。 第二钝化层形成在第一钝化层上并且包括氟。

公开(公告)号：KR1020110075400A

公开(公告)日：2011-07-06

申请号：KR1020090131842

申请日：2009-12-28

Applicant: 삼성전자주식회사

Inventor： 김상욱 ,  김창정 ,  박재철 ,  김호정

IPC: G01L1/16 ,  B82B1/00

CPC classification number: H01L41/113 ,  B82Y99/00 ,  G01L1/16 ,  H01L41/047 ,  H01L41/083

Abstract: PURPOSE: A pressure sensor using nanowire is provided to enable low-temperature deposition and implement a high-performance pressure sensor using a piezoelectric element with high transmittance and piezo-electric constant. CONSTITUTION: A pressure sensor using nanowire includes a transistor(130), a first electrode(120), a nanowire layer, and a second electrode(121). The transistor comprises an insulating layer, a channel, and a source/drain. The first electrode is connected to the source/drain of the transistor. The nanowire layer is composed of a plurality of piezoelectricity nanowires perpendicularly arranged on the first electrode. The second electrode comprises a second electrode arranged on the nanowire layer.

Abstract translation: 目的：提供使用纳米线的压力传感器，以实现低温沉积，并使用具有高透射率和压电常数的压电元件实现高性能压力传感器。 构成：使用纳米线的压力传感器包括晶体管（130），第一电极（120），纳米线层和第二电极（121）。 晶体管包括绝缘层，沟道和源极/漏极。 第一电极连接到晶体管的源极/漏极。 纳米线层由垂直布置在第一电极上的多个压电纳米线构成。 第二电极包括布置在纳米线层上的第二电极。

公开(公告)号：KR1020110065859A

公开(公告)日：2011-06-16

申请号：KR1020090122539

申请日：2009-12-10

Applicant: 삼성전자주식회사

Inventor： 김선일 ,  김창정 ,  전상훈 ,  송이헌 ,  박재철

IPC: G06F3/042

CPC classification number: G06F3/0412 ,  G06F3/0386 ,  G06F3/042 ,  G06F3/043

Abstract: PURPOSE: An optical touch panel and a driving method thereof are provided to easily control a large display device with a simple light source device by constituting an optical sensing area with a light sensitive transparent oxide transistor. CONSTITUTION: An optical touch panel(10) comprises optical sensing areas(11s) sensing incident light. The optical sensing areas are formed into one body with pixels(11p) within a display panel or are formed above surface of the display panel. A light sensitive transparent oxide transistor is used as an optical sensor of the optical sensing areas. The light sensitive transparent oxide transistor comprises a gate electrode, a gate insulation film, a light sensitive transparent oxide semiconductor layer, and a source/drain electrode.

Abstract translation: 目的：提供一种光学触摸面板及其驱动方法，通过用光敏透明氧化物晶体管构成光学感测区域，通过简单的光源装置容易地控制大型显示装置。 构成：光学触摸面板（10）包括感测入射光的光学感测区域（11s）。 光学感测区域与显示面板内的像素（11p）形成一体，或者形成在显示面板的表面上方。 光敏透明氧化物晶体管用作光学感测区域的光学传感器。 光敏透明氧化物晶体管包括栅电极，栅极绝缘膜，光敏透明氧化物半导体层和源极/漏极。

公开(公告)号：KR1020110052939A

公开(公告)日：2011-05-19

申请号：KR1020090109692

申请日：2009-11-13

Applicant: 삼성전자주식회사

Inventor： 김상욱 ,  김창정 ,  박재철 ,  김선일

IPC: H01L29/786 ,  G02F1/1333

CPC classification number: H01L29/7869 ,  H01L29/78696 ,  H01L27/1225 ,  H01L29/26

Abstract: PURPOSE: A transistor, a manufacturing method thereof, and an electrode device including the same are provided to improve the reliability of a flat panel display device by including the transistor which suppresses the change of a property due to light. CONSTITUTION: A gate(G1) is formed on a substrate(SUB1). A gate insulation layer(Gl1) is formed on the substrate to cover the gate. A channel layer(C1) is formed on the gate insulation layer and is made of oxide with In and Zn and a first element. A source(S1) and a drain(D1) are connected to both sides of the channel layer.

Abstract translation: 目的：提供晶体管及其制造方法以及包括该晶体管的电极器件，以通过包括抑制由于光引起的特性变化的晶体管来提高平板显示装置的可靠性。 构成：在基板（SUB1）上形成栅极（G1）。 在基板上形成栅极绝缘层（Gl1）以覆盖栅极。 沟道层（C1）形成在栅极绝缘层上，并由In和Zn和第一元素的氧化物构成。 源极（S1）和漏极（D1）连接到沟道层的两侧。

公开(公告)号：KR1020110050926A

公开(公告)日：2011-05-17

申请号：KR1020090107517

申请日：2009-11-09

Applicant: 삼성전자주식회사

Inventor： 김선일 ,  김상욱 ,  박재철 ,  김창정

IPC: H01L29/786

CPC classification number: H01L29/78696 ,  H01L29/7869 ,  H01L29/06

Abstract: PURPOSE: A transistor, a manufacturing method thereof, and an electronic device including the same are provided to prevent the change of a property due to a residual charge trap generated in a channel layer due to light by suppressing a trap site through an oxygen rich layer. CONSTITUTION: A gate insulation layer(GI1) covering a gate(G1) is formed on a substrate(SUB1). A channel layer(C1) with a multi layer is formed on the gate insulation layer. The channel layer includes a first oxide layer(R1) and a second oxide layer(P1). A source electrode(S1) and a drain electrode(D1) connected to both sides of the channel layer are formed on the gate insulation layer. A passivation layer(PS1) is formed on the gate insulation layer to cover the channel layer, the source electrode, and the drain electrode.

Abstract translation: 目的：提供一种晶体管及其制造方法以及包括该晶体管的电子器件，以防止由于通过富氧层抑制捕获部位而引起的光在通道层中产生的残留电荷陷阱而引起的特性变化 。 构成：在基板（SUB1）上形成覆盖栅极（G1）的栅极绝缘层（GI1）。 在栅极绝缘层上形成具有多层的沟道层（C1）。 沟道层包括第一氧化物层（R1）和第二氧化物层（P1）。 在栅绝缘层上形成与沟道层两侧连接的源电极（S1）和漏电极（D1）。 在栅绝缘层上形成钝化层（PS1），以覆盖沟道层，源电极和漏电极。