Abstract:
PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve external light efficiency by selectively arranging an optical path structure on only the second region with an auxiliary electrode. CONSTITUTION: A transparent substrate includes a first region and a second region. A first transparent electrode(102) is arranged on one side of the transparent substrate. A second transparent electrode(110) is separated from the first transparent electrode to face each other. An organic light emitting layer(108) is arranged between the first transparent electrode and the second transparent electrode. An auxiliary electrode(106) selectively masks the second region. [Reference numerals] (AA) First area; (BB) Second area
Abstract:
본 발명은 전기 방사 장치 및 이를 이용한 정렬된 나노 섬유 제조방법에 관한 것으로, 본 발명에 따른 전기 방사 장치는 나노섬유 원료가 되는 고분자 용액을 토출하는 방사 노즐부; 상기 방사 노즐부로부터 방사되는 섬유를 수집하기 위한 한 쌍의 접지 전극; 상기 방사 노즐부와 접지 전극 사이에 전압을 인가하기 위한 제 1 고전압 직류 발생기; 상기 방사 노즐부와 상기 한 쌍의 접지 전극 사이에 위치된 노즐에서 방사되는 섬유의 분산을 방지하기 위해 전기장 렌즈; 상기 전기장 렌즈를 제어하는 제 2 고전압 직류 발생기; 및 상기 접지 전극을 스위칭하기 위한 스위칭 수단를 포함한다. 이와 같은 구조의 전기 방사 장치를 이용함에 따라서, 전기방사 노즐로부터 방사되는 나노섬유의 방사방향을 조절할 수 있으며, 이로 인하여 정렬된 나노섬유를 제조할 수 있다. 전기방사장치, 전기장 렌즈, 스위칭
Abstract:
PURPOSE: A solar battery using a semiconducting nano fiber and a manufacturing method thereof are provided to realize a p-n junction structure of high density using a semiconducting nano fiber, thereby increasing energy generating efficiency. CONSTITUTION: A grid type lower metal electrode(202) is formed on a transparent insulating substrate. A high density semiconductor nano fiber non-woven fabric layer is formed on the grid type lower metal electrode using a semiconducting nano fiber. A transparent semiconductor film is formed on a high density semiconductor nano fiber non-woven fabric layer using a transparent oxide semiconductor material for forming a p-n junction with a semiconductor nano fiber. A grid type upper metal electrode(501) is formed on the transparent semiconductor film.
Abstract:
PURPOSE: An environmental gas sensor and a manufacturing method thereof are provided to simultaneously sense two kinds of gases. CONSTITUTION: An environmental gas sensor comprises an insulating substrate(100), a metal electrode(200), and a sensing layer(300). The insulating substrate is selected from the group consisting of oxide single crystal substrates, ceramic substrates, silicon semiconductor substrates, glass substrates, insulating substrates including a microheater, and micromachine structure substrates embedded with a microheater. The metal electrode is formed on the insulating substrate. The sensing layer comprises different kinds of nano fiber(310) which are arranged to cross each other at the right angle.
Abstract:
PURPOSE: An ultra high sensitive gas sensor using oxide semiconductor nanofiber and a manufacturing method thereof are provided to utilize an ubiquitous sensor system for next generation and an environment monitoring system by providing an oxide semiconductor nanofiber gas sensor of a good property. CONSTITUTION: An ultra high sensitive gas sensor(100) using oxide semiconductor nanofiber comprises an insulating substrate(110), a metal electrode(120), and a metal oxide semiconductor nano fiber layer. The metal electrode is formed on the insulating substrate. The metal oxide semiconductor nano fiber layer is covered with nano particles with a high sensitivity formed at the upper part of the metal electrode. The insulating substrate comprises an oxide single crystal substrate, a ceramic substrate, a silicon substrate or a glass substrate on which an insulating layer is formed. The metal electrode includes Pt, Pd, Ag, Au, Ni, Ti, Cr, Al, Cu, Sn, Mo, Ru or In. The nano particles covered on the nano fiber layer comprise metal oxide particles or metal catalyst particles of nano size which have high sensitivity to special gas.
Abstract:
A TFT reducing the leakage current, a manufacturing method thereof and an active matrix display device including the TFT are provided to reduce the generation of electronic holes which cause the leakage current by forming a double active layered structure with an SiOx(silicon oxide) layer including Si nano particles. A shock-absorbing insulating layer(220) is formed with the oxide or nitride material on a plastic substrate(210). A double active window(230) is made of a silicon oxide layer(232) including a poly-silicon layer(231a) and silicon nano particles. The silicon oxide film is divided into a silicon nano particle and a stabilized SiO2 by the temperature rise of an amorphous silicon layer due to the radiation of a laser beam.