公开(公告)号：KR1019940000155B1

公开(公告)日：1994-01-07

申请号：KR1019900021811

申请日：1990-12-26

Applicant: 한국전자통신연구원

Inventor： 이종람 ,  이정희 ,  박성호 ,  김진섭 ,  박형무

IPC: H01L21/31

Abstract: The method is characterized by forming a sulfur insulating film on the surface of a compound semiconductor by using a mixed solution of a conventional etching solution and a sulfur treatment solution. In the above method, etching and sulfur treatment can be performed simultaneously by dipping a compound semiconductor into the mixed solution of etching solution of NH4OH + H2O2 + H2O (20:7:973) and sulfur treatment solution of (NH4)2Sx(x=0.2-2.0) at the ratio of 1/0.1-1/10 for 1-10 mins at the initial stage of treating process and a mixed solution of NH4OH + H2O2 + H2O (4:1:4000) and (NH4)2Sx(x=0.2-2.0) at the ratio of 1/0.1-1/10 can be used at the gate recess process.

Abstract translation: 该方法的特征在于通过使用常规蚀刻溶液和硫处理溶液的混合溶液在化合物半导体的表面上形成硫绝缘膜。 在上述方法中，可以通过将化合物半导体浸入NH 4 OH + H 2 O 2 + H 2 O（20:7:973）的蚀刻溶液和（NH 4）2 S x的硫处理溶液（x = 0.2-2.0）在处理初始阶段为1 / 0.1-1 / 10的比例为1-10分钟，NH 4 OH + H 2 O 2 + H 2 O（4:1:4000）和（NH4）2Sx（ x = 0.2-2.0）可以在栅极凹陷处理中使用1 / 0.1-1 / 10的比例。

公开(公告)号：KR1019920013661A

公开(公告)日：1992-07-29

申请号：KR1019900021809

申请日：1990-12-26

Applicant: 한국전자통신연구원

Inventor： 이정희 ,  박성호 ,  이종람 ,  김진섭 ,  박형무

IPC: H01L29/80

Abstract: 내용 없음

公开(公告)号：KR1019910005439A

公开(公告)日：1991-03-30

申请号：KR1019890012068

申请日：1989-08-24

Applicant: 한국전자통신연구원

Inventor： 이종람 ,  박성호 ,  맹성재 ,  김진섭

IPC: H01L23/52 ,  H01L27/04

Abstract: 내용 없음.