公开(公告)号：KR1020110049336A

公开(公告)日：2011-05-12

申请号：KR1020090106310

申请日：2009-11-05

Applicant: 한양대학교 산학협력단

Inventor： 안진호 ,  정창영 ,  이상설

IPC: H01L21/027 ,  H01L21/66

CPC classification number: G03F1/24 ,  G03F1/72 ,  G03F1/76 ,  G03F1/84 ,  G03F7/70866

Abstract: PURPOSE: An apparatus and method for detecting a defect of a reflective mask for EUV(Extreme Ultraviolet) lithography are provided to image a defective state, thereby increasing reliability in detecting a defect of the reflective mask. CONSTITUTION: A stage comprises a holding surface(11) for receiving a reflective mask(M). A light source unit irradiates EUV light to the reflective mask. A defect detecting unit collects light reflected from the reflective mask to detect a defective area. A defect imaging unit irradiates EUV light to a defective area and collects reflected light to evaluate imaging on the defective area. Detection of the defective area of the reflective mask and detection imaging are performed by in-situ.

Abstract translation: 目的：提供用于检测用于EUV（极紫外）光刻的反射掩模的缺陷的装置和方法，以对缺陷状态进行成像，从而提高检测反射掩模缺陷的可靠性。 构成：舞台包括用于接收反光罩（M）的保持表面（11）。 光源单元将EUV光照射到反射掩模。 缺陷检测单元收集从反射掩模反射的光以检测缺陷区域。 缺陷成像单元将EUV光照射到缺陷区域并收集反射光以评估缺陷区域上的成像。 通过原位进行反射掩模的缺陷区域的检测和检测成像。

公开(公告)号：KR1020080036774A

公开(公告)日：2008-04-29

申请号：KR1020060103437

申请日：2006-10-24

Applicant: 한양대학교 산학협력단

Inventor： 정용재 ,  강인용 ,  안진호

IPC: G06F17/50 ,  H01L21/02 ,  B82Y35/00

CPC classification number: G06F17/5009 ,  B82Y35/00 ,  G06F17/10 ,  H01L21/02104

Abstract: A method for simulating reflectivity and phase calculation of a multilayer system is provided to form a non-periodical multilayer thin film model, a defective multilayer thin film model including internal defect, and a multilayer thin film model considering diffusion between layers by increasing degree of freedom of an input file. Various models like a non-periodical multilayer thin film model, a defective multilayer thin film model including internal defect such as pores and foreign materials, and a multilayer thin film model considering diffusion between layers are formed by adjusting each structure factor of a multilayer thin film with an MRSP(Multilayer Reflectivity Simulation Program). Reflectivity and a phase of the multilayer thin film corresponding to the formed models are calculated based on a predetermined mathematical formula by using a small quantity of computing resources.

Abstract translation: 提供了一种用于模拟多层系统的反射率和相位计算的方法，以形成非周期性多层薄膜模型，包括内部缺陷的有缺陷的多层薄膜模型，以及通过增加自由度考虑层之间的扩散的多层薄膜模型 的输入文件。 像非周期性多层薄膜模型，包括孔隙和异物等内部缺陷的有缺陷的多层薄膜模型和考虑层之间的扩散的多层薄膜模型的各种模型通过调整多层薄膜的各个结构因子而形成 使用MRSP（多层反射率仿真程序）。 通过使用少量的计算资源，基于预定的数学公式来计算对应于形成的模型的多层薄膜的反射率和相位。

公开(公告)号：KR100801484B1

公开(公告)日：2008-02-12

申请号：KR1020060087094

申请日：2006-09-09

Applicant: 한양대학교 산학협력단

Inventor： 안진호 ,  김태근 ,  이승윤 ,  박인성

IPC: H01L21/027

CPC classification number: G03F1/22 ,  G03F1/46 ,  G03F1/78 ,  H01L21/0332 ,  H01L21/0337

Abstract: A method for fabricating a mask for an extreme ultraviolet exposure process is provided to improve contrast in a DUV(deep ultraviolet) exposure process and increase the efficiency of a mask inspection process using DUV by enabling fabrication of a thin ARC(anti-reflective coating) on an absorption layer. A scatterer layer made of Mo and a spacer layer made of Si are alternately deposited on a predetermined mask substrate(21) to form a multilayered thin film(22). Ru is deposited on the multilayered thin film to form a capping layer(23). TaN is deposited on the capping layer to form an absorption layer(24). Al2O3 is deposited on the absorption layer to form an ARC(25). The ARC and the absorption layer are patterned. The deposition of the Al2O3 is formed by a sputtering method under a condition of pressure of 0.3-1.5 milliTorr and power of RF 50-150 watts. The absorption layer can have a thickness of 23-36 nm, and the ARC can have a thickness of 19-29 nm.

Abstract translation: 提供了用于制造用于极紫外曝光工艺的掩模的方法，以改善DUV（深紫外）曝光工艺中的对比度，并且通过使得能够制造薄的ARC（抗反射涂层）来提高使用DUV的掩模检查过程的效率， 在吸收层上。 由Mo制成的散射体层和由Si制成的间隔层交替地沉积在预定的掩模基板（21）上以形成多层薄膜（22）。 Ru沉积在多层薄膜上以形成封盖层（23）。 TaN沉积在覆盖层上以形成吸收层（24）。 Al 2 O 3沉积在吸收层上以形成ARC（25）。 ARC和吸收层被图案化。 通过溅射法在0.3-1.5毫乇的压力和50-150瓦特的功率的条件下形成Al 2 O 3的沉积。 吸收层的厚度可以为23-36nm，ARC的厚度可以为19-29nm。

公开(公告)号：KR1020070042266A

公开(公告)日：2007-04-23

申请号：KR1020050097977

申请日：2005-10-18

Applicant: 한양대학교 산학협력단

Inventor： 이상선 ,  이민희 ,  곽수진 ,  손승희 ,  안진호 ,  박상욱

IPC: H04W92/18 ,  H04W88/02 ,  H04W76/02

CPC classification number: H04W92/18 ,  G06K7/10009 ,  G06K19/0723 ,  G06Q50/10

Abstract: 본 발명은 사용자 단말기에서 RFID 기술을 이용한 응용 서비스 방법, 그 방법을 수행하는 사용자 단말기 및 프로그램을 기록한 기록매체에 관한 것이다. 본 발명의 실시예에 따르면, 사용자 단말기에서 RFID를 이용한 정보 제공 방법에 있어서, 특정 사물에 부착 또는 내장된 RFID 태그의 태그 정보를 판독하는 단계; 태그 정보에 상응하는 정보를 출력하는 단계; 및 사용자에 의해 선택된 서비스 종류에 상응하는 서비스 제공 서버의 접속 정보를 인식하여 서비스 제공 서버로 접속하는 단계를 포함하는 사용자 단말기에서 RFID를 이용한 정보 제공 방법이 제공된다. 따라서, RFID 리더기와 같은 전자태그 판독장치가 장착된 사용자 단말기를 이용한 응용 서비스를 제공하는 방법 및 그 방법을 수행하는 사용자 단말기를 제공할 수 있는 효과가 있다.
RFID, 태그, 리더기, 단말기, 이동통신

公开(公告)号：KR1020060134563A

公开(公告)日：2006-12-28

申请号：KR1020050054341

申请日：2005-06-23

Applicant: 한양대학교 산학협력단

Inventor： 박인성 ,  김경래 ,  고한경 ,  이태호 ,  안진호

IPC: H01L27/10

CPC classification number: H01L45/1641 ,  H01L45/1233 ,  H01L45/145

Abstract: A method for fabricating an RRAM(resistive random access memory) by stacked deposition of an insulation layer is provided to eliminate the necessity of a forming process by forming an insulation thin film and by performing a final high temperature treatment after an insulation thin film has a desired thickness by repeated low-temperature treatments. A substrate is prepared(S401). A barrier layer is deposited on the substrate. A lower electrode is deposited on the resultant structure(S402). An insulation thin film is deposited on the lower electrode(S403). A first heat treatment is performed at a temperature which doesn't cause a phase change in the insulation thin film(S404). The process for depositing the insulation thin film and the first heat treatment are sequentially repeated to form an insulation thin film of a desired thickness. A second heat treatment is performed at a temperature that causes a phase change in the insulation thin film(S406). An upper electrode is deposited on the insulation thin film(S407).

Abstract translation: 提供了通过堆叠沉积绝缘层制造RRAM（电阻随机存取存储器）的方法，以消除通过形成绝缘薄膜的成形工艺的必要性，并且在绝缘薄膜具有绝缘薄膜之后进行最终的高温处理 通过重复低温处理所需的厚度。 准备基板（S401）。 阻挡层沉积在衬底上。 在所得结构上沉积下电极（S402）。 绝缘薄膜沉积在下电极上（S403）。 在不会导致绝缘薄膜的相变的温度下进行第一热处理（S404）。 依次重复沉积绝缘薄膜和第一热处理的工艺以形成所需厚度的绝缘薄膜。 在导致绝缘薄膜的相变的温度下进行第二热处理（S406）。 在绝缘薄膜上沉积上电极（S407）。