72.
    发明专利
    未知

    公开(公告)号:DE69605601T2

    公开(公告)日:2000-05-25

    申请号:DE69605601

    申请日:1996-05-29

    Applicant: CANON KK

    Abstract: An electron emitting device includes a pair of device electrodes disposed at locations opposite to each other, a conductive thin film in contact with both the pair of device electrodes, and an electron emitting region formed in a part of the conductive thin film. The conductive thin film is composed of fine particles including a first metal element serving as a main constituent element and at least one second metal element. The second metal element is to precipitate at the surface of the conductive thin film and thus form a low work function material layer. When a voltage is applied between the pair of device electrodes, the second metal element moves from the inside of the conductive thin film to at least a part of the surface of the conductive thin film.

    74.
    发明专利
    未知

    公开(公告)号:DE69605601D1

    公开(公告)日:2000-01-20

    申请号:DE69605601

    申请日:1996-05-29

    Applicant: CANON KK

    Abstract: An electron emitting device includes a pair of device electrodes disposed at locations opposite to each other, a conductive thin film in contact with both the pair of device electrodes, and an electron emitting region formed in a part of the conductive thin film. The conductive thin film is composed of fine particles including a first metal element serving as a main constituent element and at least one second metal element. The second metal element is to precipitate at the surface of the conductive thin film and thus form a low work function material layer. When a voltage is applied between the pair of device electrodes, the second metal element moves from the inside of the conductive thin film to at least a part of the surface of the conductive thin film.

    CRYSTAL ARTICLES AND METHOD FOR FORMING THE SAME

    公开(公告)号:CA1339827C

    公开(公告)日:1998-04-21

    申请号:CA562511

    申请日:1988-03-25

    Applicant: CANON KK

    Inventor: OSADA YOSHIYUKI

    Abstract: A crystal article comprises; a substrate having i) a nonnucleation surface (SNDS) having a small nucleation density, ii) at least one single-nucleation surface (SNDL-S) provided adjacent to said nonnucleation surface (SNDS), having an area small enough for a crystal to grow from only a single nucleus and having a larger nucleation density (NDL) than the nucleation density (NDS) of said nonnucleation surface (SNDS), and iii) at least one multiple-nucleation surface (SNDL-M) having an area large enough for crystals to grow from plural nuclei and having a larger nucleation density (NDL) than the nucleation density (NDS) of said nonnucleation surface (SNDS); at least one monocrystal grown from said single nucleus and extending over said single-nucleation surface (SNDL-S) to cover part of said nonnucleation surface (SNDS); and a polycrystalline film grown from said plural nuclei to cover said multiple-nucleation surface.

    80.
    发明专利
    未知

    公开(公告)号:DE69404061T2

    公开(公告)日:1998-02-12

    申请号:DE69404061

    申请日:1994-03-31

    Applicant: CANON KK

    Abstract: An electron source comprises a substrate, at least one row-directional wire, at least one column-directional wire intersecting the row-directional wire, at least one insulation layer arranged at the crossing(s) of the at least one row-directional wire and the at least one column-directional wire, and at least one conductive film having an electron-emitting region also arranged at the crossing(s). The insulation layer is arranged between the row-directional wire and the column-directional wire and the conductive film is connected to both the wires.

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