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    73.
    发明专利
    未知

    公开(公告)号：DE69739571D1

    公开(公告)日：2009-10-22

    申请号：DE69739571

    申请日：1997-12-05

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： BRUEL MICHEL ,  DI CIOCCIO LEA

    IPC: H01L21/20 ,  H01L21/265 ,  C30B31/22 ,  C30B33/00 ,  G01L1/14 ,  G01L9/00 ,  H01L21/02 ,  H01L21/762 ,  H01L27/12

    Abstract: A method of separating contacting elements (21, 22) of a structure (20) involves ion implantation with an energy such that the ions reach the interface (27) between the elements and at a dose such that interatomic bonds are broken at the interface and preferably a gaseous phase is formed at sufficient pressure to separate the elements. Preferably, the structure (20) is an SOI type semiconductor structure, the two elements comprise a silicon layer (21) and a silicon oxide layer (22) and the implanted ions are hydrogen ions.

    74.
    发明专利
    未知

    公开(公告)号：FR2895562B1

    公开(公告)日：2008-03-28

    申请号：FR0554110

    申请日：2005-12-27

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  CENTRE NAT RECH SCIENT ,  LYON ECOLE CENTRALE

    Inventor： DI CIOCCIO LEA ,  BORDEL DAMIEN ,  GRENET GENEVIEVE ,  REGRENY PHILIPPE

    IPC: H01L21/20 ,  C30B25/18

    Abstract: The method for relaxation of forced thin layer constraint dependent by a first principal face of an initial support and second principal face of a thin layer as a contact face, comprises supplying an intermediate support having a relaxing polymer layer (2), a principal face on substrate (1, 4) and a contact face, setting in adherent contact of the contact face of the thin layer forced with the contact face by the polymer layer, and eliminating the initial support that causes the relieving of the thin layer formation of undulations and the first principal face of the thin layer. The method for relaxation of forced thin layer constraint dependent by a first principal face of an initial support and second principal face of a thin layer as a contact face, comprises supplying an intermediate support having a relaxing polymer layer (2), a principal face on substrate (1, 4) and a contact face, setting in adherent contact of the contact face of the thin layer forced with the contact face by the polymer layer, eliminating the initial support that causes the relieving of the thin layer formation of undulations and the first principal face of the thin layer, increasing temperature of the polymer layer to stretch the released thin layer and remove the undulations, solidarizing the first principal face of the thin layer with a substrate face reception, and eliminating the intermediate support to obtain a thin layer and the substrate. The thermal dilation coefficient of polymer is higher than the thin layer. The intermediate support is supplied by depositing of a liquid state polymeric layer on the substrate for polymerization. The liquid state polymer is deposited on the substrate face having a position hold (3) for the polymer layer. The position holds are made of polymer same as the layer of polymer. The liquid state polymer deposited on the substrate is planarized by setting in contact with the liquid state polymer of planarization substrate. The planarization substrate has a resin film (5). The planarization substrate is eliminated after the polymerization. The elimination of the planarization substrate is carried out by separation of blade inserted between the polymer layer and the planarization substrate. The contact face of the thin layer and the polymer layer are in adherent contact by polymerization interposed between the contact faces or molecular joining. The initial support and the polymer layer are eliminated chemically or mechanically. The solidarization of the first principal face of the thin layer with the substrate face reception is carried out by molecular joining. The elimination of the intermediate support is done by initially eliminating the substrate of the intermediate support and the polymer layer. The substrate of the intermediate support is eliminated by separation of a blade inserted between the intermediate support and polymer layer. The forced thin layer is a first semiconductor material layer obtained by hetero-epitaxy on the initial support of the second semiconductor material.

    76.
    发明专利
    未知

    公开(公告)号：FR2756847A1

    公开(公告)日：1998-06-12

    申请号：FR9615089

    申请日：1996-12-09

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： BRUEL MICHEL ,  DI CIOCCIO LEA

    IPC: H01L21/265 ,  C30B31/22 ,  C30B33/00 ,  G01L1/14 ,  G01L9/00 ,  H01L21/02 ,  H01L27/12 ,  C30B29/36 ,  G01L9/12 ,  G01L15/00

    Abstract: A method of separating contacting elements (21, 22) of a structure (20) involves ion implantation with an energy such that the ions reach the interface (27) between the elements and at a dose such that interatomic bonds are broken at the interface and preferably a gaseous phase is formed at sufficient pressure to separate the elements. Preferably, the structure (20) is an SOI type semiconductor structure, the two elements comprise a silicon layer (21) and a silicon oxide layer (22) and the implanted ions are hydrogen ions.

    PROCEDE DE FABRICATION D'UN DISPOSITIF D'AFFICHAGE EMISSIF A LED
    77.
    发明专利
    PROCEDE DE FABRICATION D'UN DISPOSITIF D'AFFICHAGE EMISSIF A LED 未知

    公开(公告)号：FR3065321A1

    公开(公告)日：2018-10-19

    申请号：FR1753279

    申请日：2017-04-14

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： ROBIN IVAN-CHRISTOPHE ,  BERTHIER JEAN ,  CHERAMY SEVERINE ,  DI CIOCCIO LEA

    IPC: H01L27/15 ,  G09F9/33 ,  H01L21/77 ,  H01L33/08

    Abstract: L'invention concerne un procédé de fabrication d'un dispositif d'affichage émissif à LED, comprenant les étapes suivantes : a) réaliser une pluralité de puces (200) comprenant chacune au moins une LED (110), et, sur une face de connexion, une pluralité de plages de connexion électrique hydrophiles (125, 126, 127, 128) et une zone hydrophobe (202) ; b) réaliser un substrat de report (250) comprenant, pour chaque puce, une pluralité de plages de connexion électrique hydrophiles (155, 156, 157, 158) et une zone hydrophobe (252) ; c) disposer une goutte d'un liquide (260) sur chaque plage de connexion électrique du substrat de report et/ou de chaque puce ; et d) fixer les puces sur le substrat de report par collage direct, en utilisant la force de rappel de capillarité des gouttes pour aligner les plages de connexion électrique des puces sur les plages de connexion électrique du substrat de report.

    PROCEDE DE COLLAGE DIRECT D'UNE COUCHE D'OXYDE DE SILICIUM
    79.
    发明专利
    PROCEDE DE COLLAGE DIRECT D'UNE COUCHE D'OXYDE DE SILICIUM 未知

    公开(公告)号：FR2981940A1

    公开(公告)日：2013-05-03

    申请号：FR1159723

    申请日：2011-10-26

    Applicant: COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： SABBIONE CHIARA ,  DI CIOCCIO LEA ,  NIETO JEAN-PIERRE ,  VANDROUX LAURENT

    IPC: C09J5/00 ,  B32B7/04

    Abstract: Procédé de collage direct entre au moins une première couche (104) composée d'oxyde de silicium et une deuxième couche (108) de matériau présentant un caractère hydrophile, comprenant au moins les étapes de : - réalisation de la première couche sur un premier substrat (102) telle que la valeur de l'absorbance de cette première couche, à une fréquence de vibration de liaisons silanols présentes dans la première couche, soit égale ou supérieure à environ 1, 5. 10 nm ; - collage direct entre la première couche et la deuxième couche (108).

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