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    72.
    发明专利
    未知

    公开(公告)号：DE2546232A1

    公开(公告)日：1976-04-29

    申请号：DE2546232

    申请日：1975-10-15

    Applicant: SONY CORP

    Inventor： MATSUSHITA TAKESHI ,  MAMINE TAKAYOSHI

    IPC: H01L31/04 ,  H01L31/06 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/10

    Abstract: A semiconductor photovoltaic device is comprised of 2n layers of alternating p-type and n-type material having respective PN junctions between adjacent layers, wherein n is an integer greater than 1. Each layer has a thickness which is less than the diffusion length of a minority carrier therein. The PN junctions are excited by light which is incident on the device to thereby cause majority carriers to be accumulated in the respective layers so as to forward bias all of the PN junctions. As a result of this forward biasing, minority carriers are injected across a first PN junction fr0m one layer into an adjacent layer and then traverse the next PN junction into the next succeeding layer. The photovoltaic device thus is adapted to supply a voltage and a current to a load.

    Manufacturing method of integrated thin film element
    76.
    发明专利
    Manufacturing method of integrated thin film element 有权
    集成薄膜元件的制造方法

    公开(公告)号：JP2013009016A

    公开(公告)日：2013-01-10

    申请号：JP2012224853

    申请日：2012-10-10

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： MATSUSHITA TAKESHI ,  YAMAUCHI KAZUSHI ,  HIROSHIMAYA NAOKO ,  SATO AKIRA

    IPC: H01L31/04

    CPC classification number: Y02E10/52 ,  Y02E10/547

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of an integrated thin film element capable of improving a manufacturing yield and throughput.SOLUTION: A manufacturing method of an integrated thin film element includes the steps of: forming a porous semiconductor layer on one surface of a semiconductor substrate; forming a semiconductor layer on the porous semiconductor layer and then forming a plurality of thin film elements on the semiconductor layer; peeling the plurality of thin film elements from the semiconductor substrate using the porous semiconductor layer; sticking a back surface protective film to rear surface sides of the plurality of peeled thin film elements via an adhesive layer; forming an etching groove between the plurality of thin film elements by laser etching of the semiconductor layer; and forming an element isolation groove by cleaving the semiconductor layer using the etching groove and then holding the plurality of thin film elements in the same position on the back surface protective film before and after the cleavage.

    Abstract translation: 解决的问题：提供能够提高制造成品率和生产率的集成薄膜元件的制造方法。 解决方案：集成薄膜元件的制造方法包括以下步骤：在半导体衬底的一个表面上形成多孔半导体层; 在所述多孔半导体层上形成半导体层，然后在所述半导体层上形成多个薄膜元件; 使用多孔半导体层从半导体基板剥离多个薄膜元件; 通过粘合剂层将背面保护膜粘贴到多个剥离的薄膜元件的后表面侧; 通过所述半导体层的激光蚀刻在所述多个薄膜元件之间形成蚀刻槽; 以及通过使用蚀刻槽切割半导体层，然后在切割之前和之后将多个薄膜元件保持在背面保护膜上的相同位置来形成元件隔离槽。 版权所有（C）2013，JPO＆INPIT

    MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT
    77.
    发明专利
    MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT 失效

    公开(公告)号：JP2001111080A

    公开(公告)日：2001-04-20

    申请号：JP29288599

    申请日：1999-10-14

    Applicant: SONY CORP

    Inventor： MATSUSHITA TAKESHI ,  MIZUNO SHINICHI

    IPC: H01L21/3205 ,  H01L21/20 ,  H01L21/28 ,  H01L31/0224 ,  H01L31/04

    Abstract: PROBLEM TO BE SOLVED: To offer the manufacture of semiconductor elements, especially of solar cells, which can form desired electrode patterns by simple processes at a low cost. SOLUTION: An electrode pattern is formed by such method that, after p-type semiconductor layers 3 and 4 are formed on a silicon substrate 1 and an n-type semiconductor layer 5 is formed on the p-type semiconductor layer, the n-type semiconductor layer is removed with a predetermined pattern by using laser abrasion so as to expose the p-type semiconductor layer.

    THIN-FILM ELEMENT MODULE AND ITS MANUFACTURE
    78.
    发明专利
    THIN-FILM ELEMENT MODULE AND ITS MANUFACTURE 失效

    公开(公告)号：JPH1168133A

    公开(公告)日：1999-03-09

    申请号：JP22507697

    申请日：1997-08-21

    Applicant: SONY CORP

    Inventor： MATSUSHITA TAKESHI ,  YAMAUCHI KAZUSHI

    IPC: G02F1/1345 ,  H01L21/02 ,  H01L27/00 ,  H01L27/12 ,  H01L31/04

    Abstract: PROBLEM TO BE SOLVED: To provide a thin-film element module and its manufacturing method, in which cost and energy consumption are reduced by simplifying the structure of the thin-film element module and its manufacturing method. SOLUTION: A solar battery module 300 includes a plurality of separated solar cell units 310, for instance arranged serially on a flexible plastic film supporting board 320. The adjoining solar cell units 310 are connected to each other with a connecting member 330. Each solar cell unit 310 is obtained by cutting between a plurality of the solar cell units transcribed on a plastic film board 210 by using a paper cutter or the like. The separated solar cell units 310 is bonded on a plastic film supporting board 320, and the adjoining solar battery elements are connected electrically with the connecting member 330 made of a conductive film.

    THIN FILM SEMICONDUCTOR DEVICE AND METHOD AND DEVICE FOR MANUFACTURING IT
    79.
    发明专利
    THIN FILM SEMICONDUCTOR DEVICE AND METHOD AND DEVICE FOR MANUFACTURING IT 失效

    公开(公告)号：JPH10190032A

    公开(公告)日：1998-07-21

    申请号：JP17819997

    申请日：1997-07-03

    Applicant: SONY CORP

    Inventor： MATSUSHITA TAKESHI ,  JONATHAN WESTWATER ,  KUSUNOKI MISAO ,  NAKAKOSHI MIYAKO ,  YAMAUCHI KAZUSHI

    IPC: H01L21/762 ,  H01L21/02 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  H01L31/04

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing thin film semiconductor device by which an ideal large-area thin film semiconductor device can be manufactured by easily transferring the semiconductor device separated from a substrate to another substrate without causing such a problem as the separation of another semiconductor device during the formation of the semiconductor device. SOLUTION: A solar cell and a plastic substrate 170 formed on an epitaxial layer 120 are separated from a silicon substrate 100 by using a cooling means. Namely, the silicon substrate 100 and plastic substrate 170 are cooled by using the vapor 180A of liquid nitrogen, etc. The substrates 100 and 170 shrink at different shrinkage factors when the substrates 100 and 170 are cooled, because the shrinkage factor of the substrate 170 is remarkably large than that of the substrate 100, in general. Therefore, the substrate 170 more shrinks than the substrate 100 does when the substrates 170 and 100 are cooled with the vapor 180 of liquid nitrogen. A large shearing stress occurs in a separating layer 111 due to the difference is shrinkage factor and, as a result, the solar cell is separated from the silicone substrate 100.

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