公开(公告)号：JP2003347243A

公开(公告)日：2003-12-05

申请号：JP2002152415

申请日：2002-05-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OTORII SUGURU ,  NOGAMI TAKESHI ,  SATO SHUZO ,  TAKAHASHI SHINGO ,  KOMAI HISANORI ,  TAI KAORI ,  HORIKOSHI HIROSHI

IPC: B24B37/00 ,  B24B37/04 ,  B24B37/30 ,  B24B37/32 ,  H01L21/304 ,  H01L21/3063

Abstract: PROBLEM TO BE SOLVED: To enable a current to be stably applied to a work as an object to be polished with the stable distribution of current density up to the end of polishing, to use a conventional plating device, a cleaning device or the like as usual, and to enable a manufacturing process flow to be put into practice. SOLUTION: A Cu film 5 to be polished is formed on one main surface of a wafer substrate 1, a peripheral seed film 9 is formed on the peripheral face of the wafer substrate 1 so as to be connected to the Cu film 5, the wafer substrate 1 and a counter electrode 17 are arranged in an electrolytic solution so as to confront each other as separated from each other at a prescribed distance, an anode 16 is provided on the inner peripheral surface of a retainer ring 13 arranged on the outer periphery of the wafer substrate 1, and a current is applied to the Cu film 5 through the outer peripheral seed film 9 abutting against the anode 16. While the current is applied to the Cu film 5, a pad 14 is made to slide on the surface of the Cu film 5 to polish the Cu film 5. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题为了使电流能够稳定地施加到作为抛光对象的工件，其电流密度的稳定分布直到抛光结束，使用传统的电镀装置，清洁装置或 像往常一样，并且使制造工艺流程付诸实践。 解决方案：在晶片基板1的一个主表面上形成待抛光的Cu膜5，在晶片基板1的周面上形成周边晶种膜9，以连接到Cu膜5 ，将晶片基板1和对置电极17以规定的距离彼此分离地配置在电解液中，阳极16设置在保持环13的内周面上， 晶片基板1的外周，并且通过与阳极16抵接的外周种子膜9向Cu膜5施加电流。当将电流施加到Cu膜5上时，使焊盘14滑动 Cu膜5的表面以抛光Cu膜5.版权所有（C）2004，JPO

公开(公告)号：JP2003313700A

公开(公告)日：2003-11-06

申请号：JP2002120610

申请日：2002-04-23

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KOMAI HISANORI ,  SATO SHUZO ,  TAKAHASHI SHINGO ,  HORIKOSHI HIROSHI ,  TAI KAORI ,  OTORII SUGURU ,  NOGAMI TAKESHI

IPC: B23H3/08 ,  C25F3/22 ,  C25F3/30 ,  H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide an electropolishing liquid for precisely and stablly electropolishing copper, a method for electropolishing copper with the use of the electropolishing liquid, and a method for manufacturing a semiconductor device.
SOLUTION: The electropolishing liquid for electropolishing copper includes a copper ion. The method for electropolishing copper is characterized by making the electropolishing liquid containing the copper ion exist between a material to be polished of an anode and a cathode, and electrolytically treating the material. The method for manufacturing the semiconductor device, which electropolishes metallic wires including copper, is characterized by making the electropolishing liquid containing the copper ion exist between the material to be polished of the anode and the cathode, and electrolytically treating the material.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种用于精确和稳定地电解铜的电抛光液，使用电解抛光液体电解铜的方法，以及制造半导体器件的方法。 解决方案：用于电解铜的电解抛光液包括铜离子。 电解铜的方法的特征在于，在阳极和阴极的待抛光材料之间存在含有铜离子的电解抛光液体，并进行电解处理。 制造对包含铜的金属线进行电解抛光的半导体装置的制造方法的特征在于，在阳极的被研磨材料和阴极之间存在含有铜离子的电解抛光液体，并进行电解处理。 版权所有（C）2004，JPO

公开(公告)号：JP2003311540A

公开(公告)日：2003-11-05

申请号：JP2002129163

申请日：2002-04-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SATO SHUZO ,  NOGAMI TAKESHI ,  TAKAHASHI SHINGO ,  KOMAI HISANORI ,  TAI KAORI ,  HORIKOSHI HIROSHI ,  OTORII SUGURU

IPC: B23H5/12 ,  C09G1/02 ,  C25F3/02 ,  C25F3/16 ,  H01L21/304 ,  H01L21/321

CPC classification number: C09G1/02 ,  C25F3/02 ,  C25F3/16 ,  H01L21/32125

Abstract: PROBLEM TO BE SOLVED: To improve electric conductivity without causing coagulating sedimentation of abrasive grains and achieve excellent flattening without causing defects of a metal film to be polished or defects of wiring.
SOLUTION: This electrolytic polishing method comprises the step of carrying out flattening of the metal film face to be polished through sliding of a polishing pud 15 thereon while the metal film face to be polished is being oxidized by electrolysis in electrolytic polishing liquid E. The electrolytic polishing liquid E contains at least the abrasive grains and electrolytes to maintain static charged state of the abrasive grains. The electrolytic polishing liquid E having high electric conductivity is used, so that high value of electrolytic current is obtained and the distance between electrodes is made larger. The electrolytic polishing liquid having good dispersion of the abrasive grains is used, thus the abrasive brains are not allowed to remain and defects such as scratches are not caused after polishing.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了提高导电性而不引起磨粒的凝结沉淀，并且实现优异的平坦化，而不会引起要抛光的金属膜的缺陷或布线的缺陷。 解决方案：该电解抛光方法包括以下步骤：通过在其上抛光抛光液15的滑动使待抛光的金属膜表面被电解抛光液E中的电解氧化而进行抛光的金属膜表面的平坦化 电解抛光液E至少含有磨粒和电解质，以保持磨粒的静电充电状态。 使用具有高导电性的电解抛光液E，从而获得高的电解电流，并使电极之间的距离更大。 使用具有良好的磨粒分散性的电解抛光液，因此不允许残留磨损的大脑，并且在抛光之后不会引起诸如刮痕的缺陷。 版权所有（C）2004，JPO

公开(公告)号：JP2003311537A

公开(公告)日：2003-11-05

申请号：JP2002129173

申请日：2002-04-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SATO SHUZO ,  NOGAMI TAKESHI ,  TAKAHASHI SHINGO ,  KOMAI HISANORI ,  TAI KAORI ,  HORIKOSHI HIROSHI ,  OTORII SUGURU

IPC: B23H5/08

Abstract: PROBLEM TO BE SOLVED: To energize an object to be polished to a polishing end point with stable current density distribution and enable the use of a conventional plating apparatus, cleaning apparatus or the like and an execution in accordance with manufacturing process flow.
SOLUTION: A substrate 1 formed with a metal film 2 and a counter electrode 3 are opposedly arranged at a predetermined interval in electrolyte E. An energizing electrode 4 to be pressed to the metal film 2 is arranged on the film 2, and this metal film 2 is electrolytically polished and wiped through sliding of a pud on the metal film 2 while the substrate 1 is being rotated. At that time electrolytic polishing is carried out by energization of the metal film 2 with the electrode 4 in slide contact with the metal film 2.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了将待抛光物体激励到具有稳定的电流密度分布的抛光终点，并且能够使用常规的电镀设备，清洁设备等以及根据制造工艺流程的执行。 解决方案：形成有金属膜2和对电极3的基板1在电解液E中以预定的间隔相对布置。在膜2上布置有被施加到金属膜2的施力电极4， 该金属膜2通过电解抛光并通过在基板1旋转时在金属膜2上滑动而擦拭。 此时通过与金属膜2滑动接触的电极4对金属膜2通电来进行电解抛光。版权所有（C）2004，JPO

公开(公告)号：JP2003247077A

公开(公告)日：2003-09-05

申请号：JP2002043781

申请日：2002-02-20

Applicant: SONY CORP

Inventor： SEGAWA YUJI ,  SATO SHUZO ,  ISHIHARA SHIGEO ,  YASUDA YOSHIYA

IPC: C23C18/31 ,  H01L21/288 ,  H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide an electroless plating method and an electroless plating device in which a plating film of excellent quality is deposited at a low cost, and a semi-conductor manufacturing method and a semi-conductor manufacturing device in which a barrier film of excellent quality is deposited at a low cost using the electroless plating method and device. SOLUTION: In the electroless plating method in which a work to be plated is immersed in a plating solution to perform the electroless plating, the plating solution is gas-bubbled with the work is immersed in the plating solution. In the electroless plating device in which the work is immersed in the plating solution to perform the electroless plating, a gas bubbling means to perform the gas bubbling of the plating solution is provided. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002302773A

公开(公告)日：2002-10-18

申请号：JP2001109156

申请日：2001-04-06

Applicant: SONY CORP

Inventor： SEGAWA YUJI ,  SATO SHUZO ,  YASUDA YOSHIYA ,  ISHIHARA SHIGEO ,  NOGAMI TAKESHI

IPC: C23C18/31 ,  C23C18/16 ,  C23C18/40 ,  C23C18/44 ,  C23C18/50 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide an electroless plating apparatus in which the change of a plating liquid with time can suppressed and electroless plating is uniformly carry out with good precision, and to provide a method for electroless plating. SOLUTION: The electroless plating apparatus is used for forming an electroconductive film by subjecting a surface to be plated to electroless plating under an atmosphere of a prescribed gas. A material W to be plated is arranged in such a way that the surface to be electroplated faces to the inner face. The electroless plating apparatus has a plating tank 21 for isolating at least the surface to be plated from the outer atmosphere and a plating liquid supplying means 26 for supplying the plating liquid to at least the surface in such a way that the impact of the plating liquid to the surface of the material W is lessened.

公开(公告)号：JP2001322036A

公开(公告)日：2001-11-20

申请号：JP2001056039

申请日：2001-02-28

Applicant: SONY CORP

Inventor： SATO SHUZO ,  SEGAWA YUJI ,  YUBI HIROSHI ,  OTORII SUGURU ,  YASUDA YOSHIYA ,  ISHIHARA SHIGEO ,  NOGAMI TAKESHI ,  KOMAI HISANORI

IPC: B23H5/08 ,  B23H7/12 ,  B23H7/26 ,  B23H7/36 ,  B24B37/00 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a grinding device capable of easily flattening an initial unevenness, and suppressing damages on the metal film when flattening the metal film by grinding, having excellent removing efficiency of an excessive metal film. SOLUTION: This grinding device for grinding a grinding object having the metal film on a surface to be ground comprises a grinding object holding means 42 for holding the object W, a wiper 24a for wiping the surface of the object, an electrolyte feed means for feeding the electrolyte on the surface of the object, a counter electrode 23 disposed at the position facing the surface of the object, and a current supplying means 61 for supplying the current between the surface of the object and the counter electrode 23.

公开(公告)号：JP2001298008A

公开(公告)日：2001-10-26

申请号：JP2000118558

申请日：2000-04-14

Applicant: SONY CORP

Inventor： SATO SHUZO ,  SUZUKI TAKASHI

IPC: B24B37/07 ,  B24B49/10 ,  H01L21/304 ,  B24B37/04

Abstract: PROBLEM TO BE SOLVED: To provide a method and device for polishing by which high polishing accuracy can be obtained stably without being influenced by the technical skill of workers. SOLUTION: In this polishing method, a wafer 101 is polished in such a way that a theoretical (ideal) removing amount is determined and a proportional constant k is determined as a fixed value by comparing the removing amount with the profile which is obtained when the water 101 is actually polished by CMP. Then, a number of cutting times, more specifically, appropriate polishing time (t) is determined and inputted to a controller 200 together with the other parameters. The controller 200 controls the speed of the wafer 101 in the X-axis direction, the number of revolutions of a main spindle motor 171, and the positioning of a working head 160 in the Z-axis direction by respectively supplying, for example, a control signal CTL1 to an X-axis servomotor 155, a control signal CTL2 to the motor 171, and a control signal CTL3 to a Z-axis servomotor 177.

公开(公告)号：JP2001181851A

公开(公告)日：2001-07-03

申请号：JP2000298639

申请日：2000-09-29

Applicant: SONY CORP

Inventor： SATO SHUZO ,  YUBI HIROSHI ,  SEGAWA YUJI

IPC: C23C18/16 ,  C23C18/18 ,  C25D5/34 ,  C25D7/12 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a highly productive plating method capable of superiorly filling a part to be plated, such as connection hole and wiring groove of a semiconductor device, and a plated structure. SOLUTION: After a barrier layer 5 and a catalytic layer 30 are formed on the plane including a connection hole 7 formed on a wafer 41, the catalytic layer 30 excluding that on the connection hole 7 is removed by scrubbing, by which the catalyst layer 30 on the connection hole 7 is left selectively. By performing copper electroplating in this state, a copper plating film 8A can be formed on the connection hole 1 alone. The copper plating film 8A can be embedded in this state as a copper wiring 8 by electroless plating or can be embedded as a copper wiring 8 by electroplating using the copper plating film 8 as a seed layer.

公开(公告)号：JP2001077117A

公开(公告)日：2001-03-23

申请号：JP25360599

申请日：1999-09-07

Applicant: SONY CORP

Inventor： NOGAMI TAKESHI ,  YUBI HIROSHI ,  SATO SHUZO

IPC: H01L21/3205 ,  B24B37/04 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3063 ,  H01L21/321 ,  H01L21/336 ,  H01L21/768 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a polishing method, a polishing device, and a manufacturing method for a semiconductor device, where occurrence of dishing or erosion is suppressed in a planarizing process for polishing a metal film to constitute wiring of a semiconductor device having a multilayer interconnection structure. SOLUTION: A process (PR4) for forming a passive state film on the surface of a metal film which prevents electrolytic reaction of the metal, process (PR5) where a protruding passive state film present on the surface of metal film which is generated by filling a wiring channel is selectively removed by mechanical polishing so that the protruding metal film is exposed on the surface, a process (PR6) where the exposed protruding part of the metal film is removed by electrolytic polishing, so that the rough surface of the metal film generated by filling of filling of the wiring channel is planarized, and a process (PR7) where a metal film present on the insulating film of the metal film whose surface is planarized is removed by electrolytic composite polishing, where electrolytic polishing and mechanical polishing are composed to form wiring are provided.