公开(公告)号：JP2004014245A

公开(公告)日：2004-01-15

申请号：JP2002164840

申请日：2002-06-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MEMESAWA SATOHIKO ,  NARUI HIRONOBU ,  YANASHIMA KATSUNORI ,  SASAKI KOJI

IPC: H05B33/10 ,  C23C14/06 ,  C23C14/24 ,  H01L51/50 ,  H05B33/14

CPC classification number: C23C16/45589

Abstract: PROBLEM TO BE SOLVED: To stably transport an organic material in a vapor phase state.
SOLUTION: A material gas is produced by evaporating or sublimating the organic material 9 by an evaporating sublimating chamber 4. The material gas is mixed with a carrier gas in a material gas chamber 5, and transported to a film forming chamber 7 by means of a material gas transport tube 6. The material gas transport tube 6 is provided with a fan 2. The fan 2 generates a flow of the material gas from the material gas chamber 5 to the film forming chamber 7, and promotes the transport of the material gas. The material gas transported to the film forming chamber 7 is adsorbed to a base 3 to form an organic film. As the material gas is stably supplied in forming the organic film, a deposition rate can be stabilized.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003342718A

公开(公告)日：2003-12-03

申请号：JP2002154100

申请日：2002-05-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NARUI HIRONOBU ,  YANASHIMA KATSUNORI ,  MEMESAWA SATOHIKO ,  SASAKI KOJI

IPC: C23C14/24 ,  C23C14/12

Abstract: PROBLEM TO BE SOLVED: To adsorb an organic raw material to an entire surface of a substrate without providing any mechanically movable part.
SOLUTION: A substrate supporting base 4 is fixed to a top part of a vacuum chamber 2, and a substrate 3 is supported thereby. A plurality of evaporation sources 5 are continuously arranged in one row facing the substrate 3, and a first gas introducing pipe 6a and a second gas introducing pipe 6b are disposed facing each other across the evaporation sources 5. A raw material gas generated in the evaporation sources 5 rises toward the substrate 3. When the gas is alternately discharged from the first gas introducing pipe 6a and the second gas introducing pipe 6b, the gas flow is oscillated in the right-to/from-left direction, and the raw material gas reaches the entire surface of the substrate 3. A uniform organic film is formed over the entire surface of the substrate 3 thereby even when the substrate 3 is fixed.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了将有机原料吸附到基板的整个表面上，而不提供任何机械可移动部件。 解决方案：将基板支撑基座4固定到真空室2的顶部，并且由此支撑基板3。 多个蒸发源5连续地布置在面向衬底3的一排中，并且第一气体导入管6a和第二气体导入管6b跨越蒸发源5彼此面对。在蒸发中产生的原料气体 源5朝向基板3上升。当气体从第一气体导入管6a和第二气体导入管6b交替排出时，气流沿左右方向振动，原料气体 到达基板3的整个表面。即使当基板3被固定时，也在基板3的整个表面上形成均匀的有机膜。 版权所有（C）2004，JPO

公开(公告)号：JP2003179314A

公开(公告)日：2003-06-27

申请号：JP2001378178

申请日：2001-12-12

Applicant: SONY CORP

Inventor： NAKAJIMA HIROSHI ,  YAMAGUCHI KYOJI ,  YANASHIMA KATSUNORI

IPC: H01S5/343 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element which has such current constriction structure as different from a conventional air-ridge type nitride semiconductor light-emitting element to provide a low threshold current value, with large lateral refractive-index difference, having such a structure as easily manufactured. SOLUTION: A nitride III-V compound semiconductor laser element 50 has a laminated structure in which an n-GaN contact layer 54, n-Al 0.08 Ga 0.92 N clad layer 56, n-GaN guide layer 58, MQW active layer p-GaN guide layer 62, p-Al 0.07 Ga 0.93 N clad layer 64, and p-GaN contact layer 64 are sequentially formed on a sapphire substrate 52. An non-dope Al 0.3 Ga 0.7 N current constriction layer 68 whose film thickness is 0.3 μm is formed parallel to a substrate surface in direction of substrate or direction, in a region except for a striped current injection region 70 between the p-GaN guide layer and p-AlGaN clad layer. The AlGaN current constriction layer comprises ä11-22} surface or an epitaxial growth surface 68a of ä1-101}, on the current injection region side. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003124573A

公开(公告)日：2003-04-25

申请号：JP2001315704

申请日：2001-10-12

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： YANASHIMA KATSUNORI ,  KOBAYASHI TOSHIMASA ,  NAKAJIMA HIROSHI ,  MOTOKI KENSAKU

IPC: H01L21/331 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/737 ,  H01L29/80 ,  H01L33/16 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To realize a highly reliable semiconductor light emitting element having good emission characteristics and a long lifetime, a highly reliable semiconductor element having good characteristics and a long lifetime. SOLUTION: At the time of fabricating a semiconductor light emitting element or a semiconductor element by growing a nitride based III-V compound semiconductor layer for forming a light emitting element structure or an element structure on the major surface of a nitride based III-V compound semiconductor substrate 1 where a plurality of second regions B having a second mean dislocation density higher than a first mean dislocation density are arranged regularly in a first region A of the crystal having the first mean dislocation density, the nitride based III-V compound semiconductor layer is prevented from coming into direct contact with the second region B on the major surface of the nitride based III-V compound semiconductor substrate.

公开(公告)号：JP2002170773A

公开(公告)日：2002-06-14

申请号：JP2000363424

申请日：2000-11-29

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI

IPC: H01L21/205 ,  H01L33/16 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To manufacture easily and in a simple process nitride based III-V compound semiconductor substrates on which nitride based III-V compound semiconductor layers exhibiting a low defect density and a high quality can be grown, and to manufacture high-performance and long-life semiconductor devices by using them. SOLUTION: A nitride based III-V compound semiconductor mixed crystal layer such as an n-type AlGaN layer 23 is grown on a substrate such as a (c) surface sapphire substrate 21 and is patterned to form a seed crystal. By using the seed crystal, a nitride based III-V compound semiconductor layer such as an n-type GaN layer 24 is grown in a lateral direction to manufacture a nitride based III-V compound semiconductor substrate such as an n-type GaN substrate. By using the nitride based III-V compound semiconductor substrate and by growing a nitride based III-V compound semiconductor layer on it, a semiconductor device such as a semiconductor laser is manufactured.

公开(公告)号：JP2001313254A

公开(公告)日：2001-11-09

申请号：JP2001113914

申请日：2001-04-12

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  IKEDA MASAO ,  TOMIOKA SATOSHI

IPC: H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a nitride based III-V compound semiconductor layer which can produce a nitride based III-V compound semiconductor substrate having good crystallinity and no surface roughness nor crack with high productivity. SOLUTION: A thin GaN layer 2 is grown rate of 4 μm/h or less on a c-face sapphire substrate 1 by MOCVD or MBE, and then a sufficiently thick GaN layer 3 is grown on the GaN layer 2 at a rate higher than 4 μm/h but not higher than 200 μm/h by hydride VPE. Subsequently, the c-face sapphire substrate 1 is removed by etching or lapping to obtain a GaN substrate comprising the GaN layers 2, 3. Finally, the surface of the GaN layer 2 or 3 being used as a growth surface is etched or polished to bring about a high quality surface state.

公开(公告)号：JPH10326944A

公开(公告)日：1998-12-08

申请号：JP36028297

申请日：1997-12-26

Applicant: SONY CORP

Inventor： TODA ATSUSHI ,  YANASHIMA KATSUNORI ,  ISHIBASHI AKIRA ,  TSUKAMOTO HIRONORI ,  NAKAYAMA NORIKAZU

IPC: H01L21/203 ,  H01L21/363 ,  H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To reduce the contact resistance of an electrode that is provided on II-VI compound semiconductor layer, by growing the II-VI compound semiconductor layer and then performing treatment in an atmosphere including at least nitrogen before forming the electrode. SOLUTION: An n-type GaAs substrate 1 where the growth of II-VI compound semiconductor layer is completed is retained on a susceptor 32, an RF coil 33 is energized and the n-type GaAs substrate 1 is heated to, for example, 330 deg.C, the temperature is retained for a desired amount of time, and then hydrogen annealing is made. In this case, the hydrogen annealing temperature is sat to a relatively high value of 330 deg.C to obtain an effect due to hydrogen annealing fully and at the same time to clean the surface of a p-type ZnSe contact layer due to a risk of contaminating the surface of the p-type ZnSe contact layer, since the n-type GaAs substrate 1 is exposed to atmosphere during transportation. After that, a p-type electrode or an n-type electrode is formed.

公开(公告)号：JP2013125886A

公开(公告)日：2013-06-24

申请号：JP2011274256

申请日：2011-12-15

Applicant: Sony Corp ,  ソニー株式会社 ,  Sumitomo Electric Ind Ltd ,  住友電気工業株式会社

Inventor： KAZETAGAWA MUNEYUKI ,  NAKAJIMA HIROSHI ,  YANASHIMA KATSUNORI ,  KYONO TAKASHI ,  ADACHI MASAHIRO

IPC: H01S5/343 ,  H01S5/22

CPC classification number: H01S5/2206 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/176

Abstract: PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser element using a semi-polar substrate, which inhibits deterioration of oscillation characteristics caused by a ridge structure and which has excellent reliability.SOLUTION: A semiconductor laser element manufacturing method comprises forming an insulation layer 12 formed at a side 18a of a ridge part of an epitaxial layer 2 and on a surface of a lateral face 18b of the ridge part, in such a manner as to cover at least a part of a lateral face of a first electrode (p-side electrode) 14 formed from the epitaxial layer 2 side to a top face of the ridge part 18. By doing this, a pad electrode 13 is prevented from directly contacting the epitaxial layer 2.

Abstract translation: 解决的问题：提供一种使用半极性基板的氮化物系半导体激光元件，其抑制由脊结构引起的振荡特性的劣化，并且具有优异的可靠性。 解决方案：半导体激光元件制造方法包括在外延层2的脊部的侧面18a形成绝缘层12，并且形成在脊部的侧面18b的表面上， 以覆盖由外延层2侧形成的第一电极（p侧电极）14的侧面的至少一部分到脊部18的顶面。通过这样做，可以直接防止焊盘电极13 接触外延层2.版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013012599A

公开(公告)日：2013-01-17

申请号：JP2011144653

申请日：2011-06-29

Applicant: Sumitomo Electric Ind Ltd ,  住友電気工業株式会社 ,  Sony Corp ,  ソニー株式会社

Inventor： KUMANO TETSUYA ,  UENO MASANORI ,  KYONO TAKASHI ,  SHIOYA YOHEI ,  YANASHIMA KATSUNORI ,  TASAI KUNIHIKO ,  NAKAJIMA HIROSHI

IPC: H01S5/343

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2304/04

Abstract: PROBLEM TO BE SOLVED: To provide a gallium nitride semiconductor laser element and a gallium nitride semiconductor laser element manufacturing method, which reduce a threshold current.SOLUTION: A gallium nitride semiconductor laser element comprises: an n-type clad layer 15b; an n side optical guide layer 29; an active layer 27; a p side optical guide layer 31; and a p-type clad layer 23. An oscillation wavelength of the active layer 27 is 400 nm or more and 550 nm or less. The n-type clad layer 15b is composed of InAlGaN (0

Abstract translation: 要解决的问题：提供一种降低阈值电流的氮化镓半导体激光元件和氮化镓半导体激光元件制造方法。 解决方案：氮化镓半导体激光元件包括：n型覆盖层15b; n侧光导层29; 活性层27; p侧光导层31; 和p型覆盖层23.有源层27的振荡波长为400nm以上550nm以下。 n型覆盖层15b由以下部分构成：＆lt; SB POS =“POST”>＆lt; SB＆gt;＆lt; SB POS = N（0 ＆lt; SB＆gt;＆lt; SB POS = N（0≤x<0.05,0

公开(公告)号：JP2012156518A

公开(公告)日：2012-08-16

申请号：JP2012051761

申请日：2012-03-08

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： KYONO TAKASHI ,  TAKAGI SHINPEI ,  SUMITOMO TAKAMICHI ,  YOSHIZUMI YUSUKE ,  SHIOYA YOHEI ,  UENO MASANORI ,  YANASHIMA KATSUNORI

IPC: H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser element having a structure capable of improving oscillation yield.SOLUTION: An end face 17c of a supporting substrate 17 and an end face 19c of a semiconductor region 19 appear in a first torn surface 27 and a second torn surface 29, respectively. A laser structure 13 includes a first and second surfaces 13a and 13b, and the first surface 13a is the opposite surface to the second surface 13b. Each of the first and second torn surfaces 27 and 29 extends from the edge of the first surface 13a to the edge of the second surface 13b. The semiconductor region 19 includes an InGaN layer 24. The semiconductor region 19 can include the InGaN layer 24. The torn surface 29 includes a step 26 provided on an end face 24a of the InGaN layer 24. The step 26 extends in the direction from one side surface 22a to the other side surface 22b of a group III nitride semiconductor laser element 11. The step 26 can be formed in a portion or the whole of the end face 24a of the InGaN layer 24 in each of the torn surfaces 27 and 29.

Abstract translation: 解决的问题：提供具有能够提高振荡产率的结构的III族氮化物半导体激光元件。 解决方案：支撑基板17的端面17c和半导体区域19的端面19c分别出现在第一撕裂表面27和第二撕裂表面29中。 激光结构13包括第一表面13a和第二表面13b，第一表面13a是与第二表面13b相反的表面。 第一和第二撕裂表面27和29中的每一个从第一表面13a的边缘延伸到第二表面13b的边缘。 半导体区域19包括InGaN层24.半导体区域19可以包括InGaN层24.破损表面29包括设置在InGaN层24的端面24a上的台阶26.台阶26沿着从一个 侧面22a到III族氮化物半导体激光元件11的另一侧面22b。台阶26可以形成在每个撕裂表面27和29中的InGaN层24的端面24a的一部分或全部 （C）2012年，JPO＆INPIT