公开(公告)号：US12180584B2

公开(公告)日：2024-12-31

申请号：US16885887

申请日：2020-05-28

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Changseok Lee ,  Hyeonsuk Shin ,  Hyeonjin Shin ,  Seokmo Hong ,  Kyungyeol Ma

IPC: C30B25/10 ,  C01B21/064 ,  C23C16/02 ,  C23C16/34 ,  C23C16/50 ,  C30B25/16 ,  C30B29/40 ,  H01L21/02 ,  H01L29/08 ,  H01L29/417

Abstract: Disclosed herein is a method of fabricating hexagonal boron nitride in which hexagonal boron nitride is epitaxially grown. A method of fabricating hexagonal boron nitride includes placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of 15% or less with hexagonal boron nitride (h-BN) in a chamber; and growing hexagonal boron nitride on the catalytic metal at a temperature of 800° C. or lower while supplying a nitrogen source and a boron source into the chamber.

公开(公告)号：US12131905B2

公开(公告)日：2024-10-29

申请号：US16923478

申请日：2020-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Kyungeun Byun ,  Hyeonjin Shin ,  Soyoung Lee ,  Changseok Lee

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/50 ,  H01L29/16

CPC classification number: H01L21/02527 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/0262 ,  H01L29/1606

Abstract: A graphene structure and a method of forming the graphene structure are provided. The graphene structure includes directly grown graphene that is directly grown on a surface of a substrate and has controlled surface energy.

公开(公告)号：US12122732B2

公开(公告)日：2024-10-22

申请号：US17211174

申请日：2021-03-24

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Sangwon Kim ,  Changsik Song ,  Juhyen Lee ,  Hyejin Cho ,  Hyeonjin Shin ,  Minsu Seol ,  Dongwook Lee

IPC: C07C15/38 ,  H01L51/00 ,  H10K85/60 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/18

CPC classification number: C07C15/38 ,  H10K85/622 ,  H10K85/624 ,  H10K50/15 ,  H10K50/16 ,  H10K50/171 ,  H10K50/18

Abstract: Provided are a functionalized polycyclic aromatic hydrocarbon compound and a light-emitting device including the same. The functionalized polycyclic aromatic hydrocarbon compound is structurally stable, and exhibits high light-emission characteristics since aggregation caused by π-π stacking is inhibited, and thus may have high efficiency and long lifespan characteristics.

公开(公告)号：US12103850B2

公开(公告)日：2024-10-01

申请号：US17060893

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Van Luan Nguyen ,  Keunwook Shin ,  Hyeonjin Shin ,  Changhyun Kim ,  Changseok Lee ,  Yeonchoo Cho

IPC: B32B9/00 ,  C01B32/186

CPC classification number: C01B32/186 ,  Y10T428/30

Abstract: A method of forming graphene includes: preparing a substrate in a reaction chamber; performing a first growth process of growing a plurality of graphene aggregates apart from each other on the substrate at a first growth rate by using a reaction gas including a carbon source; and performing a second growth process of forming a graphene layer by growing the plurality of graphene aggregates at a second growth rate slower than the first growth rate by using the reaction gas including the carbon source.

公开(公告)号：US12087818B2

公开(公告)日：2024-09-10

申请号：US17967200

申请日：2022-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Minsu Seol ,  Hyeonjin Shin

IPC: H01L29/10 ,  H01L29/36 ,  H01L29/423

CPC classification number: H01L29/1033 ,  H01L29/36 ,  H01L29/4232

Abstract: A transistor including at least one two-dimensional (2D) channel is disclosed. A transistor according to some example embodiments includes first to third electrodes separated from each other, and a channel layer that is in contact with the first and second electrodes, parallel to the third electrode, and includes at least one 2D channel. The at least one 2D channel includes at least two regions having different doping concentrations. A transistor according to some example embodiments includes: first to third electrodes separated from each other; a 2D channel layer that is in contact with the first and second electrodes and parallel to the third electrode; a first doping layer disposed under the 2D channel layer corresponding to the first electrode; and a second doping layer disposed under the 2D channel layer corresponding to the second electrode, wherein the first and second doping layers contact the 2D channel layer.

公开(公告)号：US12027589B2

公开(公告)日：2024-07-02

申请号：US17087968

申请日：2020-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Hyeonjin Shin ,  Yeonchoo Cho ,  Seunggeol Nam ,  Seongjun Park ,  Yunseong Lee

IPC: H01L29/16 ,  C01B32/186 ,  H01L21/02

CPC classification number: H01L29/1606 ,  C01B32/186 ,  H01L21/02384 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02398 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/0262

Abstract: Provided is a semiconductor device including graphene. The semiconductor device includes: a substrate including an insulator and a semiconductor; and a graphene layer configured to directly grow only on a surface of the semiconductor, wherein the semiconductor includes at least one of a group IV material and a group III-V compound.

公开(公告)号：US11985910B2

公开(公告)日：2024-05-14

申请号：US17836435

申请日：2022-06-09

Applicant: Samsung Electronics Co., Ltd. ,  President and Fellows Of Harvard College

Inventor： Minhyun Lee ,  Dovran Amanov ,  Renjing Xu ,  Houk Jang ,  Haeryong Kim ,  Hyeonjin Shin ,  Yeonchoo Cho ,  Donhee Ham

IPC: H10N70/00 ,  H10B63/00 ,  H10N70/20

CPC classification number: H10N70/826 ,  H10B63/80 ,  H10N70/24 ,  H10N70/8416

Abstract: Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.

公开(公告)号：US11908918B2

公开(公告)日：2024-02-20

申请号：US18059660

申请日：2022-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Yunseong Lee ,  Sanghyun Jo ,  Keunwook Shin ,  Hyeonjin Shin

IPC: H01L23/00 ,  H01L29/51 ,  H01L21/02

CPC classification number: H01L29/513 ,  H01L21/0228 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02356 ,  H01L29/516

Abstract: Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.

公开(公告)号：US11887849B2

公开(公告)日：2024-01-30

申请号：US17012661

申请日：2020-09-04

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Changhyun Kim ,  Sangwoo Kim ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Ahrum Sohn ,  Jaehwan Jung

IPC: H01L21/02 ,  C23C14/34 ,  C23C14/58 ,  C23C14/06 ,  H01L29/66

CPC classification number: H01L21/02631 ,  C23C14/06 ,  C23C14/34 ,  C23C14/5806 ,  H01L21/02667 ,  H01L29/66969 ,  H01L21/02568 ,  H01L21/02592 ,  H01L21/02595

Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.

公开(公告)号：US11713248B2

公开(公告)日：2023-08-01

申请号：US17138194

申请日：2020-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok Lee ,  Changhyun Kim ,  Kyung-Eun Byun ,  Keunwook Shin ,  Hyeonjin Shin ,  Eunkyu Lee

IPC: C23C16/26 ,  C01B32/186 ,  C01B32/194 ,  C23C16/513 ,  C23C16/04 ,  C23C16/02

CPC classification number: C01B32/186 ,  C01B32/194 ,  C23C16/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/513

Abstract: A method of selectively growing graphene includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.